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MJ 15003 (NPN)
MJ 15003 (NPN)
MJ 15003 (NPN)
com
High Safe Operating Area (100% Tested) 5.0 A @ 50 V For Low Distortion Complementary Designs High DC Current Gain hFE = 25 (Min) @ IC = 5 Adc PbFree Packages are Available*
MAXIMUM RATINGS
Rating Symbol VCEO VCBO VEBO IC IB IE Value 140 140 5 Unit Vdc Vdc Vdc Adc Adc Adc CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Continuous Base Current Continuous 20 5 Emitter Current Continuous 25 Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 250 1.43 W W/C C TJ, Tstg 65 to +200
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol RqJC TL
Max
Unit
0.70 265
C/W C
Maximum Lead Temperature for Soldering Purposes 1/16 from Case for v 10 secs
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
MJ1500x = Device Code x = 3 or 4 G = PbFree Package A = Location Code YY = Year WW = Work Week MEX = Country of Orgin
ORDERING INFORMATION
Device MJ15003 MJ15003G MJ15004 MJ15004G *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2005
Preferred devices are recommended choices for future use and best overall value.
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0) VCEO(sus) ICEX 140 Vdc Collector Cutoff Current (VCE = 140 Vdc, VBE(off) = 1.5 Vdc) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150C) Collector Cutoff Current (VCE = 140 Vdc, IB = 0) 100 2 250 100 mAdc mAdc mAdc mAdc ICEO IEBO Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Baised (VCE = 50 Vdc, t = 1 s (non repetitive)) (VCE = 100 Vdc, t = 1 s (non repetitive)) IS/b Adc 5.0 1.0 ON CHARACTERISTICS DC Current Gain (IC = 5 Adc, VCE = 2 Vdc) hFE 25 150 1.0 2.0 Collector Emitter Saturation Voltage (IC = 5 Adc, IB = 0.5 Adc) Base Emitter On Voltage (IC = 5 Adc, VCE = 2 Vdc) VCE(sat) VBE(on) Vdc Vdc DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) fT 2.0 MHz pF cob 1000 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%. IC, COLLECTOR CURRENT (AMP) 20 15 10 7 5 3 2 1 TJ = 200C BONDING WIRE LIMITED THERMAL LIMITATION (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO TC = 25C
There are two limitations on the powerhandling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on T J(pk) = 200C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
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A N C T E D
2 PL SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO204AA OUTLINE SHALL APPLY. DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 21.08 3.84 4.19 30.15 BSC 3.33 4.77
K
M
0.13 (0.005) U V
2
T Q
L G
1
Q 0.13 (0.005)
T Y
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MJ15003/D