2N5210/MMBT5210

2N5210/MMBT5210
NPN General Purpose Amplifier
C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1A to 50 mA. C BE

TO-92
B

SOT-23
Mark: 3M

Absolute Maximum Ratings*

Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA = 25C unless otherwise noted

Parameter

Value
50 50 4.5 100 -55 to +150

Units
V V V mA C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA = 25C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max.
2N5210 625 5.0 83.3 200 MMBT5210 350 2.8 357

Units
mW mW/C C/W C/W

2002 Fairchild Semiconductor Corporation

2N5210, Rev B

2N5210/MMBT5210

NPN General Purpose Amplifier

(continued)

Electrical Characteristics
Symbol Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 1.0 mA, IB = 0 IC = 0.1 mA, IE = 0 VCB = 35 V, IE = 0 VEB = 3.0 V, IC = 0 50 50 50 50 V V nA nA

ON CHARACTERISTICS
hFE DC Current Gain IC = 100 A, VCE = 5.0 V IC = 1.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V* IC = 10 mA, IB = 1.0 mA IC = 1.0 mA, VCE = 5.0 V 200 250 250 600

VCE(sat) VBE(on)

Collector-Emitter Saturation Voltage Base-Emitter On Voltage

0.7 0.85

V V

SMALL SIGNAL CHARACTERISTICS

fT Ccb hfe NF Current Gain - Bandwidth Product Collector-Base Capacitance Small-Signal Current Gain Noise Figure IC = 500 A,VCE = 5.0 V, f= 20 MHz VCB = 5.0 V, IE = 0, f = 100 kHz IC = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz IC = 20 A, VCE = 5.0 V, RS = 22 k, f = 10 Hz to 15.7 kHz IC = 20 A, VCE = 5.0 V, RS = 10 k, f = 1.0 kHz 30 4.0 250 900 2.0 3.0 dB dB MHz pF

*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

2N5210/MMBT5210

NPN General Purpose Amplifier

(continued)

Typical Characteristics

1200

VBEON - BASE-EMITTER ON VOLTAGE (V)

hFE - TYPICAL PULSED CURRENT GAIN

Typical Pulsed Current Gain vs Collector Current

1000

Collector-Emitter Saturation Voltage vs Collector Current

0.30

125 C

V C E = 5.0V

0.25

= 10

800

0.20

600

25 C

125 C
0.15

400
o

0.10

25 C

200

- 40 C

0.05

- 40 C
1 10 100

0 0.01

0.03

0.1

0.3

10

30

100

0.1

I C - COLLECTOR CURRENT (m A)

I C - COLLECTOR CURR EN T (m A)

VBESAT - COLLECTOR-EMITTER VOLTAGE (V)

1.0

VBEON - BASE-EMITTER ON VOLTAGE (V)

Base-Emitter Saturation Voltage vs Collector Current

Base-Emitter ON Voltage vs Collector Current

1.0

- 40 C
0.8

0.8

- 40 C 25 C
o

0.6

25 C 125 C
o

0.6

125 C
0.4

0.4

= 10
0.2 0.1 1 10 100

0.2 0.1 1

V C E = 5.0V
10

I C - COLLECTO R CURRENT (mA)

I C - COLLECTO R CURRENT (m A)

Collector-Cutoff Current vs Ambient Temperature

I CBO - COLLE CTOR CURRENT (nA) 10 VCB = 45V

0.1 25

50 75 100 125 T A - AMBIE NT TEMP ERATURE ( C)

150

2N5210/MMBT5210

NPN General Purpose Amplifier

(continued)

Typical Characteristics

(continued)

Input and Output Capacitance vs Reverse Bias Voltage

f = 1.0 MHz CAPACITANCE (pF) 4 3
C te

Contours of Constant Gain Bandwidth Product (f T )

V CE - COLLECTOR VOLTAGE (V) 10 7 5
150 MHz 175 MHz

3 2

2 1 0
C ob

125 MHz 100 MHz 75 MHz

8 12 16 REVERSE BIAS VOLTAGE (V)

20

1 0.1

1 10 I C - COLLECTOR CURRENT (mA)

100

CHARACTERIS TIC S RELATI VE TO VALUE AT T A = 25 C

Normalized Collector-Cutoff Current vs Ambient Temperature

1000

Wideband Noise Frequency vs Source Resistance

5
V CE = 5.0 V

NF - NOISE FIGURE (dB)

4 3 2 1 0

BANDWIDTH = 15.7 kHz

100

I C = 100 A I C = 30 A

10

I C = 10 A
2,000 5,000 10,000 20,000 50,000 100,000

1 25

50 75 100 125 T A - AMBIE NT TEMPERATURE ( C)

150

1,000

R S - SOURCE RESISTANCE ( )

Noise Figure vs Frequency

10
PD - POWER DISSIPATION (W)

NF - NOISE FIGURE (dB)

I C = 200 A, R S = 10 k I C = 100 A, R S = 10 k I C = 1.0 mA, R S = 500

Base-Emitter Saturation Voltage vs Collector Current

1.00

0.75

TO-92
0.50

I C = 1.0 mA, R S = 5.0 k V CE = 5.0V

SOT-23
0.25

0 0.0001

0.001

0.01 0.1 1 f - FREQUENCY (MHz)

10

100

0.00 0 25 50 75 100
o

125

150

TEMPERATURE ( C)

2N5210/MMBT5210

NPN General Purpose Amplifier

(continued)

Typical Characteristics

(continued)

Contours of Constant Narrow Band Noise Figure

R S - SOURCE RESISTANCE ( )
3.0 dB
5,000

Contours of Constant Narrow Band Noise Figure

R S - SOURCE RESISTANCE ( )
10,000 5,000

10,000

4.0 dB
2,000 1,000 500
V CE = 5.0 V f = 100 Hz BANDWIDTH = 20 Hz

2.0 dB
2,000

6.0 dB 8.0 dB 10 dB 12 dB 14 dB

3.0 dB
1,000

4.0 dB
500
V CE = 5.0 V f = 1.0 kHz BANDWIDTH = 200 Hz

6.0 dB 8.0 dB

200 100

200 100

10 100 I C - COLLECTOR CURRENT ( A)

1,000

10 100 I C- COLLECTOR CURRENT ( A)

1,000

Contours of Constant Narrow Band Noise Figure

R S - SOURCE RESISTANCE ( ) 5000 2000 1000 500 200 100 1 V CE = 5.0V f = 10kHz BANDWIDTH = 2.0kHz R S - SOURCE RESISTANCE ( ) 10000
1.0 dB 2.0 dB 3.0 dB 4.0 dB 6.0 dB 8.0 dB

Contours of Constant Narrow Band Noise Figure

10000 5000 2000 1000 500
2.0 dB

3.0 dB 5.0 dB 6.0 dB

10 100 I C - COLLECTOR CURRENT ( A)

1000

VCE = 4.0 dB 5.0V f = 1.0 MHz 200 BANDWIDTH 7.0 dB = 200kHz 8.0 dB 100 0.01 0.1 1 I C - COLLECTOR CURRENT ( A)

10

2N5210/MMBT5210

NPN General Purpose Amplifier

(continued)

Typical Common Emitter Characteristics

(f = 1.0 kHz)

CHARACTERISTI CS RELATI VE TO VALUE(VCE =5V)

1.4
h fe

CHARACTE RI STICS RE LATIV E TO VA LUE (TA =25 C)

Typical Common Emitter Characteristics

1.3
h ie

Typical Common Emitter Characteristics

1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 -100
h oe h fe h re h ie

1.2 1.1
h re

h oe h re h oe

VCE = 5.0V f = 1.0kHz I C = 1.0mA

h ie

h re h fe h oe

1 h ie 0.9 0.8
h fe

I C = 1.0mA f = 1.0kHz T A = 25C 5 10 15 20 V CE - COLLECTOR VOLTAGE (V) 25

-50 0 50 100 T J - JUNCTIO N TEMP ERATURE ( C)

150

Typical Common Emitter Characteristics

CHARACTERISTICS RELATIVE TO VALUE(I C =1mA)

100 f = 1.0kHz 10
h ie and h re h re h oe

1 h oe
h fe

0.1

h ie

h fe

0.01 0.1

0.2

0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA)

50

100

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First Production

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Rev. H4