6.

10 for 2 pn-diodes with abrupt junction, one of which is made of Si and the another is made of GaAs, with N A = 1017 cm-3 and N D = 2 1014 cm-3 in both cases: a) Find the barrier voltage b) Find the maximun electric field and the space charge region width. c) Plot the space charge, potential, and electric field distribution along the diode axis Solution: a) The barrier voltage in both cases is found. For Si we obtain N N Vdiff = Vt ln A 2 D = 0.65V , and for GaAs the result is Vdiff = 1.12V n
i

b) The maximum electric field in the junction is found by setting x = 0. Subtituting the values for Si it is seen qN A EO = dp

e Re O

where the space charge region width in the p-semiconductor is found

d p (Si ) =

2eVdiff N D 1 = 4.1 10 -7 cm qN A N A + N D 2eVdiff N D 1 = 5.7 10 -7 cm qN A N A + N D

d p (GaAS ) =

Subtuting the values into the formula for the peak electric field we find that in Si it is equal to EO = 6.4 10 3 (V / cm)and for GaAs SO = 7.9 10 3 (V / cm) . c) The distributions of the space charge, potential, and electric field are identical to the figure 6-5 c - e

9.10

A BJT is operated at f = 750 MHz (and with the S-parameters as follows: S11 = 0.56 - 78O , S12 = 8.64 122O , S21 = 0.05 33O , S22 = 0.66 - 42O ). Attempt to stabilize the transistor by finding a series resistor or shunt conductance for the input and output ports. Solution In this problem, the values of S12 and S21 should have been reversed S12 = 0.05 33O , S21 = 8.64 122O . We first investigate and find that the transistor does not meet the requirements of unconditional stability. In fact, 2 2 2 1 - S11 - S22 + D k= = 0.6322, D = 0.5435 2 S12 S21 Then we plot the input and output the stability circuit then we got the result g' ' ' gin = 2.0 Gin = in = 0.04 S 50W for the output resistance

' ' rout = 0.8 Rout = 0.75 50W = 37.5W Using this resistance value, we can re-check the stability requierments by first converting the output index into ABCD network representation followed by premultiplication by converted S-parameter of the transistor. The resulting new set of ABCD parameters is reconverted into a new parameter form and check for stability below The result is now : K = 1.018 > 1 and D = 0.5435 < 1 as required

9.10 dch Mt BJT hot ng ti tn s f = 750 MHz (vi cc thng s S nh sau: S11 = 0.56 - 78O , S12 = 8.64 122O , S21 = 0.05 33O , S22 = 0.66 - 42O . Th cn bng transistor bng cc tm chc mc tr khng shunt hay series (ni tip) cng nh cc cng input v output Bi lm Trong bai tp ny, gi tr ca S12 v S21 nn c i cho nhau S12 = 0.05 33O , S21 = 8.64 122O . u tin ta kim tra v tm xem transistor c p ng cc yu cu ca cn bng khng iu kin khng. Tht s 2 2 2 1 - S11 - S22 + D k= = 0.6322, D = 0.5435 2 S12 S21 sau ta v mch input v output cho mch sau ta s thu kt qu. ' gin ' ' gin = 2.0 Gin = = 0.04 S 50W v in tr ra ' ' rout = 0.8 Rout = 0.75 50W = 37.5W S dng gi tr ca in tr, ta c th kimtra l cc yu cu v cn bng bng cch chuyn gi tr output thnh m i dim mng ABCD bng cch ly o thng s S. Kt qu l thng s ABCD ctro73 thnh thng s mi v c im tra tnh n nh bn di. Kt qu l : K = 1.018 > 1 v D = 0.5435 < 1 nh yu cu bi.