4 SPT IGBT Modules SKiM 200GD128D Preliminary Data Features
N channel, homogenous planar
lGBT Silicon structure with n+ buffer layer in SPT (soft punch through) technology
Low inductance case
Fast & soft inverse CAL diodes
lsolated by Al 2 O 3 DCB (Direct Copper Bonded) ceramic plate
Pressure contact technology for
thermal contacts
Spring contact sysstem to attach
driver PCB to the control terminals
lntegrated temperature sensor
Typical Applications
Switched mode power supplies
Three phase inverters for AC
motor speed control
Switching (not for linear use)
GD Absolute Maximum Ratings T c = 25 C, unless otherwise specified Symbol Conditions Values Units IGBT V CES 1200 V l C T s = 25 (70) C 180 (135) A l CRM t p = 1 ms 300 A V GES 20 V T j (T stg ) - 40 ... + 150 (125) C T cop max. case operating temperature 125 C V isol AC, 1 min. 2500 V Inverse diode l F T s = 25 (70) C 150 (100) A l FRM t p = 1 ms 300 A l FSM t p = 10 ms; sin.; T j = 150 C 1400 A Characteristics T c = 25 C, unless otherwise specified Symbol Conditions min. typ. max. Units IGBT V GE(th) V GE = V CE ; l C = 6 mA 4,45 5,5 6,55 V l CES V GE = 0; V CE = V CES ; T j = 25 C 0,1 0,3 mA V CEO T j = 25 (125) C 1 (0,9) 1,15 (1,05) V r CE T j = 25 (125) C 6 (8) 8 (10) mO V CEsat l Cnom = 150 A; V GE = 15 V, T j = 25 (125) C on chip level 1,9 (2,1) 2,35 (2,55) V C ies V GE = 0; V CE = 25 V; f = 1 MHz 11 nF C oes V GE = 0; V CE = 25 V; f = 1 MHz 1 nF C res V GE = 0; V CE = 25 V; f = 1 MHz 0,7 nF L CE 15 nH R CC'+EE' resistance, terminal-chip T c = 25 (125) C 1,35 (1,75) mO t d(on) V CC = 600 V 200 ns t r l Cnom = 150 A 45 ns t d(off) R Gon = R Goff = 3,6 O 450 ns t f T j = 125 C 55 ns E on (E off ) V GE 15 V 16,6 (14,7) mJ E on (E off ) with SKHl 64; T j = 125 C V CC = 600 V; l C = 150 A 15 (18,8) mJ Inverse diode V F = V EC l Fnom = 150 A; V GE = 0 V; T j = 25 (125) C 2,3 (2,1) 2,65 V V TO T j = 125 C 1,1 V r T T j = 125 C 6 mC l RRM l F = 150 A; T j = 125 C 230 A Q rr V GE = 0 V di/dt = 6300 A/s 25 C E rr R Gon = R Goff = 3,6 O 9,9 mJ Thermal characteristics R th(j-s) per lGBT 0,24 K/W R th(j-s) per FWD 0,37 K/W Temperature Sensor R TS T = 25 (100) C 1 (1,67) kO tolerance T = 25 (100) C 3 (2) % Mechanical data M 1 to heatsink (M5) 2 3 Nm M 2 for terminals (M6) 4 5 Nm w 310 g SKiM 200GD128D 1 24-11-2005 SEN by SEMIKRON Fig. 1 Output characteristic, inclusive R CC'+ EE' Fig. 2 Rated current vs. temperature I C = f (T C ) Fig. 3 Turn-on /-off energy = f (I C ) Fig. 4 Turn-on /-off energy = f (R G ) Fig. 5 Transfer characteristic Fig. 6 Gate charge characteristic SKiM 200GD128D 2 24-11-2005 SEN by SEMIKRON Fig. 7 Switching times vs. I C Fig. 8 Switching times vs. gate resistor R G Fig. 9 Transient thermal impedance of IGBT Z thJC = f (t p ); D = t p /t c = t p * f Fig. 10 Transient thermal impedance of inverse diodes IGBT Z thJC = f (t p ); D = t p /t c = t p * f Fig. 11 CAL diode forward characteristic, incl. R CC'+ EE' Fig. 12 CAL diode peak reverse recovery current SKiM 200GD128D 3 24-11-2005 SEN by SEMIKRON Fig. 13 Typ. CAL diode recovered charge Dimensions in mm Case SKiM 4 GD Case SKiM 4 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. SKiM 200GD128D 4 24-11-2005 SEN by SEMIKRON