AON6816

30V Dual N-Channel AlphaMOS

General Description
Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS Low Gate Charge ESD protection RoHS and Halogen-Free Compliant

Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Typical ESD protection 30V 16A < 6.1m < 9.5m HBM Class 2

Application
DC/DC Converters

100% UIS Tested 100% Rg Tested

DFN5X6 EP2
S1 G1 S2 G2
1 2 3 4

D1 Top View D1 D1 D2 D2 S1

D2

8 7 6 5

G1

G2

S2

Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.05mH C VDS Spike Power Dissipation B Power Dissipation A 100ns C TC=25 TC=100 C TA=25 C TA=70 C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
C

Maximum 30 20 16 13 64 17 14 35 31 36 21 8 2.8 1.8 -55 to 150

Units V V A

VGS TC=25 C TC=100 C TA=25 C TA=70 C ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG

A A mJ V W W C

Symbol
t 10s Steady-State Steady-State

RJA RJC

Typ 35 65 5

Max 45 80 6

Units C/W C/W C/W

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Electrical Characteristics (TJ=25 C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V C TJ=55 VDS=0V, VGS= 20V VDS=VGS,ID=250A VGS=10V, ID=16A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=15A Forward Transconductance Diode Forward Voltage VDS=5V, ID=16A IS=1A,VGS=0V TJ=125 C 1.2 1.8 5 6.8 7.5 62 0.7 1 16 1540 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.8 485 448 1.7 33.4 VGS=10V, VDS=15V, ID=16A 19.7 3.3 15.0 7 VGS=10V, VDS=15V, RL=0.9, RGEN=3 IF=16A, dI/dt=500A/s 8.3 24 10 15.2 22.2 2.6 45 27 Min 30 1 5 10 2.2 6.2 8.4 9.6 Typ Max Units V A A V m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC

STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage

Maximum Body-Diode Continuous CurrentG

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=16A, dI/dt=500A/s

A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev0: Mar 2012

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 3.5V VDS=5V 20 ID (A) 4.5V 10V 3V ID(A) 20 30

10 VGS=2.5V

10

125C 25C

0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 10 Normalized On-Resistance

0 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E)

1.6 VGS=10V ID=16A

8 RDS(ON) (m )

VGS=4.5V

1.4

1.2

VGS=10V

17 5 VGS=4.5V 2 ID=15A 10

2 0 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5

0.8 0 25 50 75 100 125 150 175 200

0 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)

11 ID=16A 9.5 8 RDS(ON) (m ) 6.5 5 25C 3.5 2 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 4 125C IS (A)

1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 0.0 0.2 25C

40

125C

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 VDS=15V ID=16A Capacitance (pF) 2500

2000

Ciss

VGS (Volts)

1500

1000 Coss 500 Crss

0 0 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 35

0 0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 30

1000.0 100.0 ID (Amps) 10s

200

10s
Power (W)

160 120 80 40 0

RDS(ON)
10.0

TJ(Max)=150C TC=25C

100s DC 1ms 10ms 100ms TJ(Max)=150C TC=25C

1.0 0.1 0.0 0.01 0.1 1 VDS (Volts) 10

17 5 2 10

100

0.0001

0.001

0.01

0.1

Figure 9: Maximum Forward Biased Safe Operating Area (Note F)

Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F)

10

10 Z JC Normalized Transient Thermal Resistance

D=Ton/T TJ,PK=TC+PDM.ZJC.RJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

RJC=6C/W

40

0.1
PD

0.01
Ton Single Pulse T

0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25 20

Power Dissipation (W)

20 Current rating ID(A) 0 75 100 125 TCASE ( C) Figure 12: Power De-rating (Note F) 25 50 150 15

15

10

10

0 0 75 100 125 TCASE ( C) Figure 13: Current De-rating (Note F) 25 50 150

10000
TA=25C

1000
Power (W)

100

10

1 1E-05 0.001 0.1 10 1000

Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H)

10 Z JA Normalized Transient Thermal Resistance

D=Ton/T TJ,PK=TA+PDM.ZJA.RJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

RJA=80C/W

40

0.1
PD

0.01
Single Pulse Ton T

0.001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

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XXX

Gate Charge Test Circuit & Waveform

Vgs Qg

+
VDC

10V
VDC

DUT Vgs Ig

+ Vds -

Qgs

Qgd

Charge

Resistive Switching Test Circuit & Waveforms

RL Vds Vds

Vgs Rg

DUT

VDC

+ Vdd Vgs
t d(on) t on tr t d(off) toff tf

90%

10%

Vgs

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L Vds Id Vgs Rg DUT Vgs Vgs Vgs Vds E AR = 1/2 LIAR
2

BVDSS

VDC

+ Vdd Id

I AR

Diode Recovery Test Circuit & Waveforms

Vds + DUT Vgs
t rr

Q rr = - Idt

Vds Isd Vgs Ig

Isd

IF

dI/dt I RM Vdd

VDC

+ Vdd Vds

Rev0: Mar 2012

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