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01 Ufshsi 4 Pczuf 2 FKWKTC 7 PDG 1 Py
01 Ufshsi 4 Pczuf 2 FKWKTC 7 PDG 1 Py
Feature
N-Channel
30 4.9 80
P- TO220 -3-1
V m A
Logic Level Very low on-resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM)
Superior thermal resistance
175C operating temperature Avalanche rated dv/dt rated Ideal for fast switching buck converters
Package
Ordering Code
Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current1)
TC = 25 C
1)
Value 80 80
Unit A
ID
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-01-17
IPP05N03L IPB05N03L
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area 3)
Unit
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
V GS=0V, I D=1mA
Unit
A 0.01 10 1 1 100 100 nA m 5.6 5.2 4 3.7 7.5 7.2 5.2 4.9
1Current limited by bondwire ; with an R thJC = 0.9K/W the chip is able to carry I D= 145A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions Page 2
2003-01-17
IPP05N03L IPB05N03L
Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Output charge Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr
VGS =0V, I F=80A VR =15V, IF=lS, diF /dt=100A/s
Symbol
Conditions min.
Unit
55 -
Q gs Q gd Qg Q oss
V DD=15V, ID=40A
IS
TC=25C
80 320
Page 3
2003-01-17
IPP05N03L IPB05N03L
1 Power dissipation Ptot = f (TC)
IPP05N03L
180
90
140
70 60 50 40 30 20 10 0 0
P tot
100 80 60 40 20 0 0
20
40
60
80
ID
120
20
40
60
80
TC
TC
K/W A
/I
D
tp = 12.0s
10 0
DS
ID
DS (on )
10 2
ZthJC
100 s
10 -1
D = 0.50
1 ms
10
-2
0.20 0.10
10
1 10 ms
DC
10 0 -1 10
10
10
10
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10
VDS
Page 4
tp
2003-01-17
IPP05N03L IPB05N03L
5 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 80 s
190
IPP05N03L Ptot = 167W
17
A
160 140
i g h f
m
e
VGS [V] a 2.5 b c d 3.0 3.5 4.0 4.5 5.0 5.5 6.0 10.0
14
RDS(on)
12
ID
120 100 80 60 40 20 0 0
a c
d e
f g h i
10 8
e
6
f g h i
4
VGS [V] =
c 3.5 d 4.0 e f 4.5 5.0 g 5.5 h i 6.0 10.0
2 0 0
0.5
1.5
2.5
3.5
20
40
60
80
100
140
VDS
ID
A S
200 175 150 125 100 75 50 20 25 0 0 0 0 60 100
gfs
80 40 1 2 3 4 6
ID
V VGS
25
50
A 250 ID
Page 5
2003-01-17
IPP05N03L IPB05N03L
9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 55 A, VGS = 10 V
IPP05N03L
14
12 11
V V GS(th)
RDS(on)
2
0,855mA
1.5 98%
1
110A
0.5
200
0 -60
-20
20
60
100
C Tj
180
Tj
pF
Ciss
10 2
Coss
10 3
IF
10 1
Crss
10 2 0
10
15
20
30
10 0 0
0.4
0.8
1.2
1.6
2.4 V
VDS
Page 6
VSD
2003-01-17
IPP05N03L IPB05N03L
13 Typ. avalanche energy EAS = f (Tj) par.: ID = 55 A, VDD = 25 V, RGS = 25
60
36
mJ
50
V(BR)DSS
45
34 33 32 31 30 29 28 27 -60
E AS
C 185 Tj
-20
20
60
100
140
200
Tj
16
V
12
VGS
10
6
0.2 VDS max
0 0
20
40
60
80
nC
110
Q Gate
Page 7
2003-01-17
IPP05N03L IPB05N03L
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Mnchen Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Page 8
2003-01-17
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