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Fabric Properties Modification by Plasma Process
Fabric Properties Modification by Plasma Process
Fabric Properties Modification by Plasma Process
Plasma Process
Boonchoat Paosawatyanyong
Plasma and Advanced Material Technology Research Unit (PAMT),
Faculty of Science, Chulalongkorn University, Thailand
Plasma Nitriding
Plasma Carburizing
Plasma Etching/Cleaning
HP 4284A
L CUR L POT HPOT HCU R
depletion Rd
layer Cd Rd
Cf
A l , T i /A u e l ec tr od e
P ro b e DL C
bulk DL C Rf
S i su b strate CB RB
RB
P ro b e
Si substrate
q u artz p l ate
Geometrical model
tem p eratu re- c o ntro l l ed c hu c k
-6 7
10 10
Bias Voltage
Voltag
-7 - 5.0 V
10 - 2.5 V
0V 5
+ 2.5 V 10
Cs (Farad)
-8
10 + 5.0 V
Rs ()
Bias Voltage
-9
10 3 -5.0 V
10 - 2.5 V
0V
-10 + 2.5 V
10
+ 5.0 V
-11 1
10 2 3 4 5 6
10 2 3 4 5 6
10 10 10 10 10 10 10 10 10 10
250
(200)
Intensity (a.u.)
200
150
100
114 W
50 97 W
81 W
0 67 W
56 W
40
42
44
46
44 W
48
50
52
54
56
58
2
60
62
Polyacetylene
Polypyrrole
Polythiophene
In-situ doping
Device fabrication
RC RC
Lowpass Lowpass Oscilloscope
3MHz Funtion 300V, 1 A Filter Filter
Generator Power Supply Diffrential Voltage
Probe Probe
83k 4k
10m
Lanmuir Probe
2N5657
47m
500
10k 36k 1k
in out
235 470m
0.3n
SF6 O2 , N2
polymer
250
absorption time (min)
200
untreated
150
25 watts
100 50 watts
75 watts
50
0
0 10 20 30
Number of cycle (round)
700
700
650
Warp
600 warp 600 Weft
weft
550
500
500
Tensile strength (N)
300 400
350
200
300
100 250
200
0
150
0 5 10 15 20 25 30 0.0 0.1 0.2 0.3 0.4 0.5 0.6
Exposure time (min) Pressure (torr)
6 1.2
5 1.0
4 0.8
3
0.6
2
0.4
1
0.2
0
0.0
0 5 10 15 20 25 30 0.0 0.1 0.2 0.3 0.4 0.5 0.6
Treatment time (min) Pressure(torr)
A B C
D E F
5mm
5mm
5mm
A B
D
C