Nano-electronics : Current Status and Future Prospects

Hsi-Lien Hsiao, THU

Atom Technology
There's Plenty of Room at the Bottom
An Invitation to Enter a New Field of Physics

by Richard P. Feynman
Caltech Professor of Physics, 1951-1988; Nobel Laureate in Physics, 1965

The classic talk that Richard Feynman gave on December 29th 1959 at the annual meeting of the American Physical Society at the California Institute of Technology (Caltech)

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There's Plenty of Room at the Bottom

The principles of physics, as far as I can see, do not speak against the possibility of maneuvering things atom by atom. It is not an attempt to violate any laws; it is something, in principle, that can be done; but in practice, it has not been done because we are too big. ---by Richard P. Feynman

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Outline
Overview of conventional microelectronics Nanotechnology and Nanoelectronics Potential Nanoelectronics devices Development pathways Summary
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Semiconductor Manufacturing Process

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Conventional Microelectronic Transistor

?Schematic of NMOS transistor ?Transistor Off
P-type semiconductor insulates and blocks current flow between source and drain contacts

?Transistor On
Current flow through the channel when a positive charge
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Historical Development

The point contact transistor invented at Bell Telephone Laboratories in 1947.

In the early1960s IC, contains 4 bipolar transistors and several resistors. In the early 1990s chip contains over a million MOS transistors.

State of the art Si chip

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Roadmap in Microelectronics

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Moores Law

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SIA Prediction

The minimum feature size

The number of transistors per cm2

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The Incredible Tininess of Nano

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A Quantum Leap for Electronics

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Nanotechnology and Nanoelectronics

? A nanometer is billionth (10-9 m) of a meter and spans approximately 4-5 atoms ? Nanotechnology is the technology for designing, fabricating, and applying nanosystems nano-scale systems (a synthesis of physics, chemistry, electronics and biotech) HRTEM image ? Nanoelectronics is a electronics system whose of Si wafer components measure only a few nanometers
? Minimum feature size on todays state of art commercial integrated circuits measure about 130nm ? Over 10000 nanocomputer components could fit in the area of a single modern microcomputer components.
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System-on-a-chip

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Nanoelectronic Devices

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Operation Principle of SET

Coulomb blockade effect (? N+1> ? l)

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Silicon SET using Si Nanocrystal Floating Gate

Nobuyoshi Takahashi, Hiroki Ishikuro, and Toshiro Hiramoto, APL 76, 209 (2000)

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Silicon SET using Si Island on Oxide

H. Ahmed, Single-electron and Few Electron Memory Cells, IEDM99, 363-366, (1999)

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Room Temperature Single Electron Memory

K. Yano, T. Ishii, T. hashimoto, T. Kobayashi, F. Murai, and K. Seki, Room-Temperature Single-Electron Memory, IEEE Trans. On Electron Devices 41, 9, 1628-1638, 1994.

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Silicon SET using poly-Si Nanowires

4.2K

Andrew C. Irvine, Zahid A. K. Durrani, and Haroon Ahmed, Serge Biesemans, APL 73, 1113 (1998)

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Room Temperature Transistor Based on a Single Carbon Nanotube

SANDER J. TANS, ALWIN R. M. VERSCHUEREN, and CEES DEKKER, Nature 393, 49 (1998)

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Y-Junction Carbon Nanotube

B. C. Satishkumar, P. John Thomas, A. Govindaraj, and C. N. R. Rao, APL 77, 2530 (2000)

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Resonant Tunneling Devices

Ids-Vg

RTD

RTT
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Hybride RTD-FET

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Molecular Wire RTD

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Atom Relay Transistor (ART)

Proposed by Y. Wada, Hitachi, Ltd. 1996

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Developmental Pathways ?Scanning probe microscopy ?Self assembly ?Hybrid approaches

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Scanning Tunneling Microscope

30nmx30nm STM image of Si(111)-7x7 surface

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STM Image Gallery by IBM

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Micro-STM ? Integration of 3D (xyz) actuators and tips ? Microinstrumentation

? High speed scanning (KHz-MHz) ? High sensitivity ? Microanalytic and lithographic instruments

? Massively Parallel Architectures

? Molecular manipulation ? Terabit information storage ? nm-scale patterning and machining

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Micro-STM
(Invented by Yang Xu, Scott A. Miller, and Noel C. MacDonald, Cornell Univ., 1995)

(a) SEM micrograph of the 200 ? m by 200 ? m micro-STM.

(b) SEM micrograph of the larger 2 mm by 2 mm micro-STM.

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Micro-STM

(a) Close-up of the tip on the stage.

(b) Lateral displacement of the tip.

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Dynamic SEM Micrograph of Micro-STM

(by M. I. Lutwyche and Y. Wada, Advanced Research Laboratory, Hitachi, Ltd., Japan 1995)

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The best way to predict the future is to invent it.

--- by Alan Kay
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