Determination of the charge carrier concentration in the

unknown extrinsic semiconductor obtained from the electronic

industry

Objective:

To identify the type of unknown extrinsic semiconductors obtained from electronic industry
and determine the charge carrier concentration in it. Further estimate the mobility of these
charge carriers.

Apparatus Required:

Electromagnet, Power supply for Electromagnet, Magnetic field sensor (Hall probe),
Gauss meter, Constant current source, Voltmeter, and unknown extrinsic semiconductor.

Theory:

If a current I
x
passes in X-direction of a semiconductor crystal and a magnetic field B
z
is
applied in Z-direction, then a potential difference, called the Hall potential difference
(voltage) is produced in Y-direction. The sign of the Hall voltage depends on the nature of
charge carriers. Thus, it provides a direct determination of both the sign of the charge
carriers, e.g. electron or holes, and their density in a given sample. This is known as Hall
Effect.



Under equilibrium condition, the forces on the charges due to Hall electric field and
Lorentz force counterbalance each other, that is


B ev eE
d H
= (1)


If J is the current density then,



d C
ev n J = (2)

Where n
c
is the concentration of current carriers. Using the above two equations, we get


e n
BJ
E
C
H
= (3)

Hall Coefficient R
H
is defined in terms of current density J by the relation as



BJ R E
H H
= (4)

Hence,


e n
R
c
H
1
= (5)


If the charge carrier is an electron, then the charge on the carrier is negative.

If the charge carrier is a hole, then the charge on the carrier is positive.

Thus, the sign of the Hall coefficient will tell us whether the sample is p-type or n-type.

The mobility of the charge carrier is given by

R

(6)

Using specified value of conductivity (e.g., o = 0.1 Coulomb V
-1
sec
-1
cm
-1
for the unknown
semiconductor at room temperature) and knowing the value of R
H
from the experiment,
mobility of charge carrier can be estimated.

Experimental Procedure:

Part-A: Electromagnet current (I
EM
) vs magnetic field (B)

1. Insert the magnetic field sensor (hall probe) between two electromagnet pole pieces
with the help of the wood stand. Keep the sensor at equidistant from both poles, in a
particular orientation.

2. Connect the sensor to the Gauss meter at appropriate place. Switch on the Gauss
meter and nullify the displayed field value (Figure 1).

3. Keep the current dial at zero in the electromagnet power supply (front panel) and then
switch ON the power supply.

4. Note the magnetic field value for electromagnetic current (I
EM
) 0 A through 5 A in
1 A interval.

5. And bring the current back to 0 A and switch OFF the power supply.
Part-B: Magnetic field (B) vs Hall voltage (V
H
)

6. Remove the field sensor from the space between the electromagnet poles and insert
the unknown extrinsic semiconductor between the pole pieces as shown in figure 2, in
a particular orientation. Connect the widthwise contacts of the sample to the terminals
marked as Voltage in the constant current supply apparatus and Lengthwise
contacts to terminals marked as Current.

7. Adjust the current (I
H
) through the semiconductor to any desired value eg., I
H
=2 mA,
3 mA etc. Rotate the crystal (semiconductor) probe till it become perpendicular to
magnetic field such that Hall voltage V
H
will be the maximum. There may be some
voltage in the voltmeter even in the absence of the magnetic field. This is due to
imperfect alignment of four contacts of the Crystal and is generally known as Zero
Field Potential. In case its value is comparable to Hall voltage (sample) it should be
adjusted to a minimum possible. In the successive measurements, this error (value)
should be subtracted from the Hall voltage.


8. Now switch ON the electromagnet power supply and note the Hall voltage (V
H
) as a
function of I
EM
(in other words B
Z
) from 0 A through 5 A in 1 A interval keeping I
H

at 2mA.

9. Bring I
EM
to zero and repeat step number 8 for other I
H
values such as 3mA, 4mA.

10. Then plot a graph in V
H
vs B values at some fixed I
H
as shown in figure 3. It will be
straight line whose slope will give you R
H
of the sample.

























Figure: 1





Figure: 2
Figure: 3

Observation Table:
I: Calibration of Magnetic field:


II. Measurement of Hall Coefficient, Carrier concentration & Mobility:
I
H
= 0.5 mA
.1 Coulomb volt
-1
sec
-1
cm
-1
t = Thickness of the sample (cm)















Sr. No. I
EM
(A) B (KG)
1 0
2 0.5
3 1
4 2
5 3
6 4
Sr. I
EM
B V
H

R
H
=

(V
H
/ B) x t x

(1/ I
H
) x 10
8


(cm
3
/ Coulomb)

R
H
=
(Mean)
(cm
3
/
Coulomb)

n
c
=1/(eR
H
)
( per cm
3
) = RHo

No (A) (KG) (mV)
(cm
2
V
-1
s
-1
)









1 0


2 0.5

3 1







Measurement of Hall Coefficient, Carrier concentration & Mobility:
I
H
= 1 mA
.1 Coulomb volt
-1
sec
-1
cm
-1
t = Thickness of the sample (cm)


Measurement of Hall Coefficient, Carrier concentration & Mobility:
I
H
= 2 mA
.1 Coulomb volt
-1
sec
-1
cm
-1
t = Thickness of the sample (cm)







Sr. IEM B V
H

R
H
=

(V
H
/ B) x t x
(1/ I
H
) x 10
8

(cm
3
/ Coulomb)

R
H
=
(Mean)
(cm
3
/
Coulomb)
n
c
=1/(eR
H
)
( per cm
3
) = RHo

No (A) (KG) (mV)

(cm
2
V
-1
s
-1
)









1 0


2 0.5

3 1







Sr. IEM B V
H

R
H
=

(V
H
/B) x t x
(1/ I
H
) x 10
8

(cm
3
/ Coulomb)

R
H
=
(Mean)
(cm
3
/
Coulomb)
n
c
=1/(eR
H
)
( per cm
3
) = RHo

No (A) (KG) (mV)
(cm
2
V
-1
s
-1
)









1 0


2 0.5

3 1









Measurement of Hall Coefficient, Carrier concentration & Mobility:



I
H
= 2.5 mA
.1 Coulomb volt
-1
sec
-1
cm
-1
t = Thickness of the sample(cm)

Graph: Plot a graph in V
H
and magnetic field B at some fixed I
H
values. It will be a
straight line whose slope will be given by V
H
/B.

Calculations:

(a) From the graph of Hall Voltage Vs magnetic field, at some constant Hall
current, calculate Hall coefficient.

R
H
=(V
H
/ B) x t x (1/ I
H
) (10
8
x cm
3
/ Coulomb)

(b) Determine the type of majority carriers, i.e., whether the crystal is n-type or p-type.

(c) Calculate charge carrier density from the relation,
R
H
=1/n
c
e

n
c
=1/eR
H
(per cm
3
)

(d) Calculate carrier mobility using the formula.

= R
H
o ( cm
2
V
-1
s
-1
)

Using specified value of conductivity (0.1 Coulomb volt
-1
sec
-1
cm
-1
).



Sr. IEM B V
H

R
H
=

(V
H
/ B) x t x
(1/ I
H
) x 10
8

(cm
3
/
Coulomb)
R
H
=
(Mean)
(cm
3
/
Coulomb)
n
c
=1/(eR
H
)
( per cm
3
) = RHo

No (A) (KG) (mV)
(cm
2
V
-1
s
-
1
)










1 0


2 0.5

3 1







Result & Conclusion:

Error Analysis:
Find the Standard Deviation in R
H
values.

Applications:

- Applications for Hall Effect IC Switches in Portable Electronics: The Hall effect IC
switch detects the presence or absence of a magnetic field and outputs a digital signal
for ON/OFF. In contrast to a mechanical switch with its potential wear-out
mechanism, the Hall approach is a non-contact, long-life solution. Compared to a
mechanical switch, in many cases the Hall effect switch can simplify the choice of
sensor location.
- Applications for Hall Effect sensing have also expanded to industrial applications,
which now use Hall Effect J oysticks to control hydraulic valves, replacing the
traditional mechanical levers. Such applications include; Mining Trucks, Backhoe
Loaders, Cranes, Diggers, Scissor Lifts, etc.



Precautions:

1. Handle semiconductor sample with care, it can break.

2. Handle the Hall probe of Gaussmeter with care; it may be damaged in mishandling.

3. Do not use Electromagnets continuous at full current. It may be overheated.

4. Gap between poles of Electromagnets must remain fixed during one reading.

Questions:

1. What is Hall Effect?

2. What are n-type and p-type semiconductors?

3. What is effect of temperature on Hall Coefficient of a lightly doped semiconductor?

4. Do the holes actually move?

5. Why the resistance of sample increases with the increase of magnetic field?

6. Why the Hall voltage should be measured for both the directions of current as well
as of magnetic field?