AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description
The AO4912 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4912 is Pb-free (meets ROHS & Sony 259 specifications).

Features Q1
VDS (V) = 30V ID = 8.5A RDS(ON) < 17m RDS(ON) < 25m

Q2
VDS(V) = 30V ID=7A (VGS = 10V) <26m (VGS = 10V) <31m (VGS = 4.5V)

SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A UIS TESTED! Rg,Ciss,Coss,Crss Tested

D1 D2 D2 G1 S1/A 1 2 3 4 8 7 6 5 G2 D1/S2/K D1/S2/K D1/S2/K K

D2

Q1
G1 S1 A

Q2
G2 S2

SOIC-8 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain AF Current Pulsed Drain Current Power Dissipation Avalanche Current
B B B

Max Q1 30 20 8.5 6.8 40 2 1.28 17 43 -55 to 150

Max Q2 30 12 7 6.4 30 2 1.28 15 34 -55 to 150

Units V V A

VGS TA=25C TA=70C TA=25C TA=70C ID IDM PD IAR EAR TJ, TSTG Symbol VDS TA=25C TA=70C
B

W A mJ C Units V A

Repetitive avalanche energy 0.3mH Junction and Storage Temperature Range Parameter Reverse Voltage Continuous Forward AF Current

Maximum Schottky 30 3 2.2 20 2 1.28 -55 to 150

IF IFM PD TJ, TSTG

Pulsed Diode Forward Current Power Dissipation

A

TA=25C TA=70C Junction and Storage Temperature Range

W C

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AO4912 Parameter: Thermal Characteristics MOSFET Q1 t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Parameter: Thermal Characteristics MOSFET Q2 t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Thermal Characteristics Schottky Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead
C

Symbol RJA RJL Symbol RJA RJL

Typ 48 74 35 Typ 48 74 35

Max 62.5 110 40 Max 62.5 110 40

Units C/W

Units C/W

t 10s Steady-State Steady-State

RJA RJL

47.5 71 32

62.5 110 40

C/W

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. Rev 6: Jan 2007

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4912
Q2 Electrical Characteristics (T J=25C unless otherwise noted)

Symbol

Parameter

Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=7.0A TJ=125C VGS=4.5V, ID=6.0A VDS=5V, ID=7A IS=1A

Min 30

Typ

Max Units V 1 5 100 A nA V A

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage

1 25

1.5 20 31.6 24.3 22 0.78

2 26 38 31 1 3

m m S V A pF pF pF nC nC nC

Maximum Body-Diode Continuous Current 590 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.2 162 40 0.45 6.04 VGS=4.5V, VDS=15V, ID=7.0A 1.46 2.56 3.7 VGS=10V, VDS=15V, RL=2.2, RGEN=3 IF=7A, dI/dt=100A/s 3.5 14.9 2.5 21.2 14.2

DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

710 56 0.6 7.3

SWITCHING PARAMETERS Total Gate Charge Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery time Body Diode Reverse Recovery charge IF=7A, dI/dt=100A/s

5.5 5.5 22 4 26 21

ns ns ns ns ns nC

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. Rev 6: Jan 2007

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4912
Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 10V 25 20 ID (A) 15 10 VGS=2.5V 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 3.5V

20 16 4.5V 3V ID(A) 12 8 4 0 0 0.5 1 1.5 2 2.5 3 3.5 VGS (Volts) Figure 2: Transfer Characteristics 125C 25C VDS=5V

30 Normalized On-Resistance 28 RDS(ON) (m ) 26 24 22 20 18 16 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V VGS=4.5V

1.8 ID=7A 1.6 VGS=4.5V 1.4 1.2 1 0.8 0 50 100 150 200 Temperature (C) Figure 4: On resistance vs. Junction Temperature VGS=10V

70 60 RDS(ON) (m ) 50 IS (A) 40 125C 30 20 25C 10 2 4 6 8 10 VGS (Volts) Figure 5: On resistance vs. Gate-Source Voltage ID=7A

1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C

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AO4912
Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0 1 2 3 4 5 6 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=7A Capacitance (pF) 750 600 450 300 150 Ciss f=1MHz VGS=0V

Coss Crss

100.0 RDS(ON) limited 10.0 ID (A) TJ(Max)=150C, T A=25C 10s Power (W)

40 TJ(Max)=150C TA=25C

30

1ms 10ms 0.1s

100s

20

1.0

1s 10s DC

10

0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100

0 0.001

0.01

0.1

10

100

1000

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

PD Ton

0.01 0.00001

Single Pulse 0.0001 0.001 0.01 0.1 1

T 10 100 1000

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

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AO4912

Q1 Electrical Characteristics (T J=25C unless otherwise noted)

Symbol

Parameter

Conditions ID=250A, VGS=0V (Set VR=30V VR=30V, TJ=125C VR=30V, TJ=150C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=8.5A TJ=125C VGS=4.5V, ID=7A VDS=5V, ID=8.5A IS=1A

Min 30

Typ

Max Units V

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current. by Schottky leakage) Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance Diode+Schottky Forward Voltage Maximum Body-Diode+Schottky Continuous Current

0.007 0.05 3.2 12 1 30 13.8 20 19.7 23 0.45 0.5 3.5 971 1165 154 0.85 23 11.2 17 24 25 1.8 10 20 100 3 mA nA V A m m S V A pF pF pF nC nC nC nC 7.5 6.5 25 5 23 11 ns ns ns ns ns nC

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance (FET + Schottky) Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=0V, f=1MHz 0.35 VGS=0V, VDS=15V, f=1MHz

190 110 0.7 19.2

SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode + Schottky Reverse Recovery Time Body Diode + Schottky Reverse Recovery Charge IF=8.5A, dI/dt=100A/s IF=8.5A, dI/dt=100A/s VGS=10V, VDS=15V, RL=1.8, RGEN=3 VGS=10V, VDS=15V, ID=8.5A

9.36 2.6 4.2 5.2 4.4 17.3 3.3 19.3 9.4

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. Rev 6: Jan 2007

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4912
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics VGS=3V 4V 10V 4.5V 3.5V ID(A)

30 25 20 15 10 5 0 1 1.5 2 2.5 3 3.5 4 VGS (Volts) Figure 2: Transfer Characteristics 1040 25C 125C VDS=5V

26 Normalized On-Resistance

1.7 1.6 1.5 1.4 ID=8.5A

180 110 0.7

22 RDS(ON) (m )

VGS=4.5V

VGS=4.5V

VGS=10V

18

RGEN=3 VGS=10V, VDS=15V, RL=1.8, 1.3

14 VGS=10V 1.2 1.1 1 0.9 0 50 100 150 200 Temperature (C) Figure 4: On resistance vs. Junction Temperature

10 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage

60 50 RDS(ON) (m ) 40 30 20 10 2 4 25C 6 8 10 125C ID=8.5A IS (A)

1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 FET+SCHOTTKY 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note F) 25C 125C

VGS (Volts) Figure 5: On resistance vs. Gate-Source Voltage

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AO4912
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=8.5A Capacitance (pF) 1500 1250 1000 750 500 250 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Coss FET+SCHOTTKY Crss Ciss f=1MHz VGS=0V

100.0

TJ(Max)=150C, T A=25C RDS(ON) limited 10s Power (W) 1ms 10ms 0.1s 100s

40

1040 180 110 0.7

TJ(Max)=150C TA=25C

30

10.0 ID (A)

20

1.0

VGS=10V, VDS=15V, RL=1.8, RGEN=3

1s 10s DC 10

0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100

0 0.001

0.01

0.1

10

100

1000

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

PD Ton

0.01 0.00001

Single Pulse 0.0001 0.001 0.01 0.1 1

T 10 100 1000

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

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