IRGP4063DPbF IRGP4063D-EPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 C 5 S short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package
C

VCES = 600V IC = 48A, TC = 100C

G E

tSC 5s, TJ(max) = 175C

n-channel

VCE(on) typ. = 1.65V

Benefits
High Efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI

E C G IRGP4063DPbF

C G

IRGP4063D-EPbF

G Gate

C Collector

E Emitter

Absolute Maximum Ratings

Parameter
V CES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 25C IF @ TC = 100C IFM V GE P D @ TC = 25C P D @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load Current Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current

Max.
600 96 48 200 192 96 48 192 20 30 330 170 -55 to +175

Units
V

c e

Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw

V W

C 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm)

Thermal Resistance
Parameter
RJC (IGBT) RJC (Diode) RCS RJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount)

Min.

Typ.
0.24

Max.
0.45 0.92 40

Units
C/W

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IRGP4063DPbF/IRGP4063D-EPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)CES
V(BR)CES/TJ

Min.
600 4.0

Typ.
0.30 1.65 2.0 2.05 -21 32 1.0 450 1.95 1.45

Max. Units
2.14 6.5 150 1000 2.91 100 nA V V V

Conditions
VGE = 0V, IC = 150A

Collector-to-Emitter Breakdown Voltage

Temperature Coeff. of Breakdown Voltage

Ref.Fig CT6 CT6 5,6,7 9,10,11

V/C VGE = 0V, IC = 1mA (25C-175C) IC = 48A, VGE = 15V, TJ = 25C V IC = 48A, VGE = 15V, TJ = 150C IC = 48A, VGE = 15V, TJ = 175C VCE = VGE, IC = 1.4mA

VCE(on) VGE(th)
VGE(th)/TJ

Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current

9, 10, 11, 12

gfe ICES VFM IGES

mV/C VCE = VGE, IC = 1.0mA (25C - 175C) S VCE = 50V, IC = 48A, PW = 80s A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 175C IF = 48A IF = 48A, TJ = 175C VGE = 20V

Switching Characteristics @ TJ = 25C (unless otherwise specified)

Parameter
Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Erec trr Irr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current

Min.

Typ.
95 28 35 625 1275 1900 60 40 145 35 1625 1585 3210 55 45 165 45 3025 245 90

Max. Units
140 42 53 1141 1481 2622 78 56 176 46 pF VGE = 0V VCC = 30V ns J ns J nC IC = 48A VGE = 15V VCC = 400V

Conditions

Ref.Fig 24 CT1

IC = 48A, VCC = 400V, VGE = 15V RG = 10 , L = 200H, LS = 150nH, TJ = 25C

Energy losses include tail & diode reverse recovery

CT4

IC = 48A, VCC = 400V, VGE = 15V RG = 10 , L = 200H, LS = 150nH, TJ = 25C

CT4

IC = 48A, VCC = 400V, VGE=15V RG=10 , L=200H, LS=150nH, TJ = 175C IC = 48A, VCC = 400V, VGE = 15V RG = 10 , L = 200H, LS = 150nH TJ = 175C

13, 15 CT4 WF1, WF2 14, 16 CT4 WF1 WF2 23

Energy losses include tail & diode reverse recovery

f = 1.0Mhz TJ = 175C, IC = 192A VCC = 480V, Vp =600V Rg = 10 , VGE = +15V to 0V

4 CT2

FULL SQUARE 5 845 115 40 s J ns A

VCC = 400V, Vp =600V Rg = 10 , VGE = +15V to 0V TJ = 175C VCC = 400V, IF = 48A VGE = 15V, Rg = 10 , L =200H, Ls = 150nH

22, CT3 WF4 17, 18, 19 20, 21

WF3

Notes: VCC = 80% (VCES), VGE = 20V, L = 200H, RG = 10. This is only applied to TO-247AC package. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely.

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IRGP4063DPbF/IRGP4063D-EPbF
100 90 80 70 350 300 250

50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 T C (C)

Ptot (W)

60
IC (A)

200 150 100 50 0 0 25 50 75 100 125 150 175 200 T C (C)

Fig. 1 - Maximum DC Collector Current vs. Case Temperature

1000

Fig. 2 - Power Dissipation vs. Case Temperature

1000

100

10sec 100sec

100
IC (A)

IC (A)

10

1msec

DC

1 Tc = 25C Tj = 175C Single Pulse 0.1 1 10 VCE (V) 100 1000

10

1 10 100 VCE (V) 1000

Fig. 3 - Forward SOA TC = 25C, TJ 175C; VGE =15V

200 180 160 140 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V

Fig. 4 - Reverse Bias SOA TJ = 175C; VGE =15V

200 180 160 140
ICE (A)

ICE (A)

120 100 80 60 40 20 0 0 2 4 6

120 100 80 60 40 20 0

VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V

10

10

Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s 3 www.irf.com 2013 International Rectifier

VCE (V)

VCE (V)

Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s March 15, 2013

IRGP4063DPbF/IRGP4063D-EPbF
200 180 160 140 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
200 180 160 140 120 -40c 25C 175C

ICE (A)

120 100 80 60 40 20 0 0 2 4 6 8 10

IF (A)

100 80 60 40 20 0 0.0

1.0

2.0 VF (V)

3.0

4.0

VCE (V)

Fig. 7 - Typ. IGBT Output Characteristics TJ = 175C; tp = 80s

20 18 16 14

Fig. 8 - Typ. Diode Forward Characteristics tp = 80s

20 18 16 14

VCE (V)

10 8 6 4 2 0 5 10 VGE (V)

VCE (V)

12

ICE = 24A ICE = 48A ICE = 96A

12 10 8 6 4 2 0

ICE = 24A ICE = 48A ICE = 96A

15

20

10 VGE (V)

15

20

Fig. 9 - Typical VCE vs. VGE TJ = -40C

20 18 16 14
VCE (V)
ICE (A)
200 180 160 140

Fig. 10 - Typical VCE vs. VGE TJ = 25C

T J = 25C T J = 175C

12 10 8 6 4 2 0 5 10 VGE (V)

ICE = 24A ICE = 48A ICE = 96A

120 100 80 60 40 20 0

15

20

5 VGE (V)

10

15

Fig. 11 - Typical VCE vs. VGE TJ = 175C 4 www.irf.com 2013 International Rectifier

Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10s March 15, 2013

IRGP4063DPbF/IRGP4063D-EPbF
6000 5000 EOFF 4000

1000

Swiching Time (ns)

Energy (J)

tdOFF 100 tdON tF tR

3000 2000 1000 0 0 50 IC (A)

EON

10
100 150

20

40 IC (A)

60

80

100

Fig. 13 - Typ. Energy Loss vs. IC TJ = 175C; L = 200H; VCE = 400V, RG = 10; VGE = 15V
5000 4500 4000 EOFF EON

Fig. 14 - Typ. Switching Time vs. IC TJ = 175C; L = 200H; VCE = 400V, RG = 10; VGE = 15V
1000 tdOFF

Swiching Time (ns)

Energy (J)

3500 3000 2500 2000 1500 1000 0 25 50 75

tR 100 tF

tdON

10
100 125

25

50

75

100

125

Fig. 15 - Typ. Energy Loss vs. RG TJ = 175C; L = 200H; VCE = 400V, ICE = 48A; VGE = 15V
45 40 35 30
IRR (A)

Rg ( )

RG ( )

Fig. 16 - Typ. Switching Time vs. RG TJ = 175C; L = 200H; VCE = 400V, ICE = 48A; VGE = 15V
45

RG = 10

40 35
IRR (A)

25 20 15 10 5 0 0 20

RG = 22 RG = 47 RG = 100

30 25 20 15 10

40 IF (A)

60

80

100

25

50

75

100

125

RG ()

Fig. 17 - Typ. Diode IRR vs. IF TJ = 175C 5 www.irf.com 2013 International Rectifier

Fig. 18 - Typ. Diode IRR vs. RG TJ = 175C March 15, 2013

IRGP4063DPbF/IRGP4063D-EPbF
45 40 35 4000 3500
96A

3000
QRR (nC)
48A

IRR (A)

30 25 20 15 10 0 200 400 600 800 1000 diF /dt (A/s)

10

2500 2000 1500 1000 0

100 47

22 24A

500

1000

1500

diF /dt (A/s)

Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 48A; TJ = 175C
900 800 700 600 RG = 22 RG = 10

Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175C
18 16 14
Time (s)

400 350 300

Energy (J)

Current (A)

500 400 300 200 100 0 0 20 40 IF (A) 60 80 100 RG = 100 RG = 47

12 10 8 6 4 8 10 12 14 16 18 VGE (V)

250 200 150 100 50

Fig. 21 - Typ. Diode ERR vs. IF TJ = 175C

10000 Cies

Fig. 22 - VGE vs. Short Circuit Time VCC = 400V; TC = 25C

16 14 12 10 8 6 4 2 0 V CES = 300V V CES = 400V

Capacitance (pF)

1000

Coes 100 Cres 10 0 20 40 60 80 100 VCE (V)

VGE, Gate-to-Emitter Voltage (V)

25

50

75

100

Q G, Total Gate Charge (nC)

Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz www.irf.com 2013 International Rectifier

Fig. 24 - Typical Gate Charge vs. VGE ICE = 48A; L = 600H March 15, 2013

IRGP4063DPbF/IRGP4063D-EPbF

1 D = 0.50
Thermal Response ( Z thJC )

0.1

0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )

R1 R1 J 1 2 R2 R2 R3 R3 3 C 3

0.01

Ri (C/W) i (sec) 0.0872 0.000114 0.1599 0.001520 0.2020 0.020330

0.001

Ci= i /Ri Ci i/Ri

Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

Thermal Response ( Z thJC )

1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01

J J 1

R1 R1 2

R2 R2

R3 R3 3 C 3

0.01

Ri (C/W) i (sec) 0.2774 0.000908 0.3896 0.2540 0.003869 0.030195

0.001

SINGLE PULSE ( THERMAL RESPONSE )

Ci= i /Ri Ci i/Ri

Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1

0.0001 1E-006

1E-005

0.0001

t1 , Rectangular Pulse Duration (sec)

Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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IRGP4063DPbF/IRGP4063D-EPbF
L

L
0

DUT 1K

VCC

80 V +

DUT Rg

VCC

Fig.C.T.1 - Gate Charge Circuit (turn-off)

Fig.C.T.2 - RBSOA Circuit

diode clamp / DUT L

4X DC DUT
Rg

VCC

-5V DUT / DRIVER VCC

RSH
Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit

C force
R=
VCC ICM

100K D1 22K
C sense

DUT
Rg

VCC

G force

DUT
0.0075F

E sense

E force

Fig.C.T.5 - Resistive Load Circuit

Fig.C.T.6 - BVCES Filter Circuit

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IRGP4063DPbF/IRGP4063D-EPbF
700 600 500 400 VCE (V) 300 200
5% V CE

140 120 100 80

VCE (V)

700 600 500 400 tr

TEST CURRENT

140 120 100 80 60 40

10% test current 5% V CE

I CE (A)

60
90% ICE

300 200 100 0

90% test

40 20 0 -20 1.10

100 0 -100 -0.40

5% ICE

20 0 EON -20 7.00

EOFF Loss 0.10 0.60

-100 6.20

6.40

6.60 Time (s)

6.80

Time(s)

Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175C using Fig. CT.4

Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175C using Fig. CT.4

60 50 40 30 20 IRR (A) 10 0 -10 -20 -30 -40 -0.15 Peak IRR

10% Peak IRR

600 500
QRR tRR

600 500 VCE ICE 400 300 200 100 0 -100 10.00

400 300 200 100 0 -100 -5.00

VCE (V)

-0.05

0.05

0.15

0.25

0.00

5.00

time (S)

Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175C using Fig. CT.4

time (S) Fig. WF4 - Typ. S.C. Waveform @ TJ = 25C using Fig. CT.3

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ICE (A)

ICE (A)

tf

IRGP4063DPbF/IRGP4063D-EPbF
Dimensions are shown in millimeters (inches)

TO-247AC Package Outline

TO-247AC Part Marking Information

EXAMPLE: THIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 ASS EMBLED ON WW 35, 2001 IN THE AS SEMBLY LINE "H" Note: "P" in as sembly line pos ition indicates "Lead-Free"

INTERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE

PART NUMBER
IRFPE30
56 135H 57

DATE CODE YEAR 1 = 2001 WEEK 35 LINE H

TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

10

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IRGP4063DPbF/IRGP4063D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)

TO-247AD Part Marking Information

E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E W IT H A S S E M B L Y L OT COD E 5657 AS S E M B L E D O N W W 35 , 2 00 0 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in as s e m b ly lin e p o s itio n in d icate s "L e ad - F r ee "

IN T E R N A T IO N A L R E C T IF IE R LOGO AS S E M B L Y L O T COD E

P AR T N U M B E R
03 5H 57

56

D AT E CO D E YE AR 0 = 2 0 00 WE E K 35 L IN E H

TO-247AD package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd.., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.

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