APM4018NU

N-Channel Enhancement Mode MOSFET

Features

40V/60A, RDS(ON)=6.5m (typ.) @ VGS=10V RDS(ON)=9.5m (typ.) @ VGS=4.5V

Pin Description
D G S

Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)

Top View of TO-252-3

D

Applications

Power Management in Desktop Computer or DC/DC Converters

N-Channel MOSFET

Ordering and Marking Information

APM4018N Assembly Material Handling Code Temperature Range Package Code APM4018N U : Package Code U : TO-252-3 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device

APM4018N XXXXX

XXXXX - Date Code

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2009 1 www.anpec.com.tw

APM4018NU
Absolute Maximum Ratings
Symbol Parameter Rating Unit Common Ratings (TA=25C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS IDP ID PD RJC RJA EAS** Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current 300s Pulse Drain Current Tested TC=25C TC=100C TC=25C TC=100C TC=25C TC=100C 40 45 20 150 -55 to 150 40 160 90 60*** 48 50 20 2.5 50 140 C C A A V BVDS(Avalanche)* Drain-Source Avalanche Voltage (Maximum)

Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Energy, L=0.5mH
o

A W C/W C/W mJ

Note* Avalanche single pulse test, and avalanche period time tav100s, duty<1%. ** Avalanche test condition: TJ=25 C, L=0.5mH, IAS=24A, VDD=30V, and VGS=10V. *** Current is limited by bond wire.

Electrical Characteristics
Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON)
a

(TA=25C Unless Otherwise Noted)

Test Conditions APM4018NU Min. Typ. Max. Unit

Parameter

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-State Resistance

VGS=0V, IDS=250A VDS=32V, VGS=0V TJ=85C VDS=VGS, IDS=250A VGS=20V, VDS=0V VGS=10V, IDS=20A VGS=4.5V, IDS=10A

40 1.3 -

2 6.5 9.5

1 30 3 100 8 13.5

V A V nA m

Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2009

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APM4018NU
Electrical Characteristics (Cont.)
Symbol Diode Characteristics VSD
trr
a

(TA=25C Unless Otherwise Noted)

Parameter

Test Conditions

APM4018NU Min. Typ. Max.

Unit

Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

b

ISD=20A, VGS=0V IDS=40A, dlSD/dt=100A/s

0.8 30 24

1.1 -

V ns nC

Qrr

Gate Charge Characteristics Qg Qgs Qgd RG Ciss Coss Crss td(ON) tr td(OFF) tf Total Gate Charge

VDS=20V, VGS=10V, IDS=40A -

50 7 13

70 pF nC

Gate-Source Charge Gate-Drain Charge

b

Dynamic Characteristics

Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time

VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=20V, Frequency=1.0MHz VDD=20V, RL=20, IDS=1A, VGEN=10V, RG=6

1.4 2250 250 200 17 11 58 19

32 21 105 35

ns

Note a : Pulse test ; pulse width300s, duty cycle2%. Note b : Guaranteed by design, not subject to production testing.

Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2009

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APM4018NU
Typical Operating Characteristics
Power Dissipation
60
70 60

Drain Current

50

ID - Drain Current (A)

Ptot - Power (W)

50 40 30 20

40

30

20

10 TC=25 C 0 20 40 60 80 100 120 140 160 180

o

10 0 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160

o

TJ - Junction Temperature (C)

TJ - Junction Temperature (C)

Safe Operation Area

400

Thermal Transient Impedance

2 1
Duty = 0.5 0.2 0.1 0.05

300us 1ms 10ms

Normalized Effective Transient

100

ID - Drain Current (A)

Rd s(o n)

Lim it

0.1
0.02 0.01

10
100ms 1s

DC

0.01

Single Pulse

0.1 0.01

TC=25 C

0.1

10

100 300

1E-3 1E-4

Mounted on 1in pad o RJA :50 C/W

1E-3

0.01

0.1

10

100

VDS - Drain - Source Voltage (V)

Square Wave Pulse Duration (sec)

Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2009

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APM4018NU
Typical Operating Characteristics (Cont.)
Output Characteristics
150 135 VGS=6,7,8,9,10V 5V 4.5V
20

Drain-Source On Resistance

ID - Drain Current (A)

120 105 90 75 60 3.5V 45 30 15 0 0.0 0.5 1.0 1.5 2.0 3V 4V

RDS(ON) - On - Resistance (m )

18 16 14 12 10 8 6 4 2 0 VGS=10V VGS=4.5V

2.5

3.0

30

60

90

120

150

VDS - Drain-Source Voltage (V)

ID - Drain Current (A)

Drain-Source On Resistance
20 IDS=20A 18

Gate Threshold Voltage

1.8 IDS =250A 1.6

RDS(ON) - On - Resistance (m )

16 14 12 10 8 6 4 2

VGS - Gate-Source Voltage (V)

2 3 4 5 6 7 8 9 10

1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25

25

50

75

100 125 150

VGS - Gate - Source Voltage (V)

TJ - Junction Temperature (C)

Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2009

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APM4018NU
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
2.0 1.8 VGS = 10V IDS = 20A

Source-Drain Diode Forward

150 100

Normalized On Resistance

1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 RON@Tj=25 C: 6.5m 50 75 100 125 150
o

IS - Source Current (A)

Tj=150 C 10 Tj=25 C
o

0.1 0.0

0.2 0.4

0.6

0.8 1.0

1.2 1.4

1.6

TJ- Junction Temperature (C)

VSD - Source-Drain Voltage (V)

Capacitance
3500 Frequency=1MHz 3000
9 10 VDS= 20V ID= 40A

Gate Charge

VGS - Gate-source Voltage (V)

8 7 6 5 4 3 2 1

C - Capacitance (pF)

2500 Ciss 2000 1500 1000 500 Crss 0 0 5 10 15 20 25 30 35 40

Coss

10

20

30

40

50

VDS - Drain - Source Voltage (V)

QG - Gate Charge (nC)

Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2009

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APM4018NU
Package Information
TO-252-3
E b3 L3 A c2 E1

L4

SEE VIEW A

GAUGE PLANE 0.25

SEATING PLANE L VIEW A A1

S Y M B O L A A1 b b3 c c2 D D1 E E1 e H L L3 L4 0

TO-252-3 MILLIMETERS MIN. 2.18 MAX. 2.39 0.13 0.50 4.95 0.46 0.46 5.33 4.57 6.35 3.81 2.29 BSC 9.40 0.90 0.89 10.41 1.78 2.03 1.02 0 8 0 0.370 0.035 0.035 0.89 5.46 0.61 0.89 6.22 6.00 6.73 6.00 0.020 0.195 0.018 0.018 0.210 0.180 0.250 0.150 0.090 BSC 0.410 0.070 0.080 0.040 8 MIN. 0.086 INCHES MAX. 0.094 0.005 0.035 0.215 0.024 0.035 0.245 0.236 0.265 0.236

Note : Follow JEDEC TO-252 .

Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2009

D1
0

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APM4018NU
Carrier Tape & Reel Dimensions
OD0 P0 P2 P1 A E1 F K0 B SECTION A-A T B0 A0 OD1 B A SECTION B-B

Application

H A

T1

T1

E1

330.0 2.00 50 MIN. TO-252-3 P0 4.0 0.10 P1 8.0 0.10

16.4+2.00 13.0+0.50 1.5 MIN. -0.00 -0.20 P2 2.0 0.05 D0 D1 1.5+0.10 1.5 MIN. -0.00

20.2 MIN. 16.0 0.30 1.75 0.10 7.50 0.05 T A0 B0 K0

0.6+0.00 6.80 0.20 10.40 0.20 2.50 0.20 -0.40

(mm)

Devices Per Unit

Package Type TO-252-3 Unit Tape & Reel Quantity 2500

Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2009

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APM4018NU
Taping Direction Information
TO-252-3
USER DIRECTION OF FEED

Classification Profile

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APM4018NU
Classification Reflow Profiles
Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Sn-Pb Eutectic Assembly 100 C 150 C 60-120 seconds 3 C/second max. 183 C 60-150 seconds See Classification Temp in table 1 20** seconds 6 C/second max. 6 minutes max. Pb-Free Assembly 150 C 200 C 60-120 seconds 3C/second max. 217 C 60-150 seconds See Classification Temp in table 2 30** seconds 6 C/second max. 8 minutes max.

Time (tP)** within 5C of the specified classification temperature (Tc) Average ramp-down rate (Tp to Tsmax) Time 25C to peak temperature

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

Table 1. SnPb Eutectic Process Classification Temperatures (Tc) 3 Package Volume mm Thickness <350 <2.5 mm 235 C 2.5 mm
3

Volume mm 350 220 C 220 C

3

220 C

Table 2. Pb-free Process Classification Temperatures (Tc) Package Thickness <1.6 mm 1.6 mm 2.5 mm 2.5 mm Volume mm <350 260 C 260 C 250 C Volume mm 350-2000 260 C 250 C 245 C Volume mm >2000 260 C 245 C 245 C
3

Reliability Test Program

Test item SOLDERABILITY HOLT PCT TCT Method JESD-22, B102 JESD-22, A108 JESD-22, A102 JESD-22, A104 Description 5 Sec, 245C 1000 Hrs, Bias @ 125C 168 Hrs, 100%RH, 2atm, 121C 500 Cycles, -65C~150C

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APM4018NU
Customer Service
Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 2F, No. 11, Lane 218, Sec 2 Jhongsing Rd., Sindain City, Taipei County 23146, Taiwan Tel : 886-2-2910-3838 Fax : 886-2-2917-3838

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