Universidade Federal do Rio de Janeiro

Instituto de Física

Magnetotransport in nanostructures

José d’Albuquerque e Castro

PAN AMERICAN ADVANCED STUDIES INSTITUTE

Ultrafast and Ultrasmall; New Frontiers and AMO Physics
March 30 - April 11, 2008
 Nanostructures

•  Structure and composition: nanometer scale

⇒  ultra fine films and multilayered structures
⇒  quantum wires and dots
⇒  granular systems
etc.

•  Main interest

⇒  distinct physical properties

⇒  confinement effects (quantum interference)
⇒  possibility of controlling their physical properties
⇒  technological applications
 Giant magnetoresistance

•  1988: Albert Fert/Peter Grünberg (Nobel Prize 2007)

H=0 H

AF FM
 Giant magnetoresistance

Source of the effect: spin dependent scattering

two currents

AF FM
 Giant magnetoresistance

•  Source of the effect: spin dependent scattering

•  It may occur in both regimes:

⇒ diffusive
⇒ ballistic

•  Diffusive regime: the usual approach is based on

the Boltzmann formalism

⇒ R. E. Camley and J. Barnás, PRL 63, 664 (1989)

⇒ R. Q. Hood and L. M. Falicov, PRB 46, 8287 (1992)
 Boltzmann theory

Semiclassical theory of transport

•  crystalline system: H0

⇒ Bloch states

translational symmetry ⇒
 Boltzmann theory

Semiclassical theory of transport

•  crystalline system: H0

⇒ Bloch states

•  Wannier states

translational symmetry ⇒
•  external potential V( r )

Wannier ⇒

•  for slowly varying potential V

⇒ fn( r ,t) = envelope function

NB: interband transitions n → n’ have been neglected

 Ga As
•  example

⇒
•  semiclassical approximation (correspondence principle)
the wave packet follows the classical trajectory determined
by the corresponding classical Hamiltonian

•  semiclassical equations of motion

with
•  trajectories in phase space

k empty
occupied

•  validity
λ
λ >> Δx >> a0
V(x)
Δx a0
•  trajectories in phase space

k empty
occupied

•  validity
λ
λ >> Δx >> a0
V(x)
Δx a0
•  trajectories in phase space

k empty
occupied

•  validity
λ
λ >> Δx >> a0
V(x)
Δx a0
•  distribution function:

density of occupied states in the phase space at time t

⇒  electric current:

⇒  equilibrium (V=0) distribution:

• equation for the distribution function

⇒  Liouville theorem

• Boltzmann equation

• relaxation time approximation

τ = relaxation time
•  Ohm’s law

(cubic symmetry)

⇒  electron gas: σ = ne2τ /m

•  Conductance
A

L
L
•  ballistic regime

linear dimensions << mean free path 

⇒  finite conductance !

ballistic conductor
B. J. van Wees et al.
 Giant magnetoresistance

•  Boltzmann formalism: distribution function

I II

z
•  Important point: no interference between and
 Giant magnetoresistance

•  Ballistic regime (λ >> L): Landauer formalism

voltage drop

ε = (µ1 − µ2 ) /e

M = # channels between
€ µ1 and µ2
 Giant magnetoresistance

I1+ I2+ +  2e 
I =   M [µ1 − µ2 ]
1
h
T  2e 
I2+ =   M T [µ1 − µ2 ]
h
I1- €
ε  2e 
−
I =   M (1− T) [µ1 − µ2 ]
1
h
€
⇒
€
I  2e 2 
G= = MT
(µ1 − µ2 ) /e  h 
 Magnetotransport in multilayers

translational symmetry
two current model

↓ −1
Rα = ( G + G
↑
α α )
α = FM, AF

€
 Magnetotransport in multilayers

•  How could the magnetoresistance ratio be enhanced?

•  Would it be possible to have in such systems an insulating

antiferromagnetic configuration ( )?

•  Could interference effects lead to such situation?

 Usual situation

uniform spacer EF

ferromagnetic band structure

Uniform spacer

FM

AF
Modulated spacer

EF
Modulated spacer

EF
 Modulated spacer

transmission transmission
gaps bands

EF
Ferromagnetic configuration
Antiferromagnetic configuration
 Transmission coefficients

“Enhanced magnetoresistance effect in layered systems”

M. S. Ferreira, J. dA.C., R. B. Muniz and Murielle Villeret,
Appl. Phys. Lett. 75, 2307 (1999)
 Modulated spacer

Interesting features:

⇒ huge magnetoresitance ratio

⇒ spin filtering effect

⇒ Could be used as a logical gate

 Modulated spacer

•  Challenge: to find real materials which could be used

to fabricate such a device