NTE123AP

Silicon NPN Transistor

Audio Amplifier, Switch
(Compl to NTE159)
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
40V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CB
60V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
600mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25C), P
D
625mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25C 5.0mW/C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25C), P
D
1.5W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25C 12mW/C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55 to +150C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55 to +150C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Case, R
thJC
83.3C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Ambient, R
thJA
200C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage V
(BR)CEO
I
C
= 1mA, I
B
= 0, Note 1 40 V
CollectorBase Breakdown Voltage V
(BR)CBO
I
C
= 0.1mA, I
E
= 0 60 V
EmitterBase Breakdown Voltage V
(BR)EBO
I
E
= 0.1mA, I
C
= 0 6 V
Collector Cutoff Current I
CEV
V
CE
= 35V, V
EB(off)
= 0.4V 0.1 A
Base Cutoff Current I
BEV
V
CE
= 35V, V
EB(off)
= 0.4V 0.1 A
ON Characteristics (Note 1)
DC Current Gain h
FE
V
CE
= 1V, I
C
= 0.1mA 20
V
CE
= 1V, I
C
= 1mA 40
V
CE
= 1V, I
C
= 10mA 80
V
CE
= 1V, I
C
= 150mA 100 300
V
CE
= 1V, I
C
= 500mA 40
Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
Electrical Characteristics (Contd): (T
A
= +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1) (Contd)
CollectorEmitter Saturation Voltage V
CE(sat)
I
C
= 150mA, I
B
= 15mA 0.4 V
I
C
= 500mA, I
B
= 50mA 0.75 V
BaseEmitter Saturation Voltage V
BE(sat)
I
C
= 150mA, I
B
= 15mA 0.75 0.95 V
I
C
= 500mA, I
B
= 50mA 1.2 V
SmallSignal Characteristics
Current GainBandwidth Product f
T
I
C
= 20mA, V
CE
= 10V, f = 100MHz 250 MHz
CollectorBase Capacitance C
cb
V
CB
= 5V, I
E
= 0, f = 100kHz 6.5 pF
EmitterBase Capacitance C
eb
V
CB
= 0.5V, I
C
= 0, f = 100kHz 30 pF
Input Impedance h
ie
I
C
= 1mA, V
CE
= 10V, f = 1kHz 1.0 15 k
Voltage Feedback Ratio h
re
I
C
= 1mA, V
CE
= 10V, f = 1kHz 0.1 8.0 x 10
6
SmallSignal Current Gain h
fe
I
C
= 1mA, V
CE
= 10V, f = 1kHz 40 500
Output Admittance h
oe
I
C
= 1mA, V
CE
= 10V, f = 1kHz 1.0 30 mhos
Switching Characteristics
Delay Time t
d
V
CC
= 30V, V
EB(off)
= 2V,
I 150mA I 15mA
15 ns
Rise Time t
r
( )
I
C
= 150mA, I
B1
= 15mA
20 ns
Storage Time t
s
V
CC
= 30V, I
C
= 150mA,
I I 15mA
225 ns
Fall Time t
f
I
B1
= I
B2
= 15mA
30 ns
Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
.021 (.445) Dia Max
E B C
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max