Conventional Paper-I-2013 Solutions: (ECE)

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1
Conventional Paper-I- 2013 Solutions:(ECE)

Sol. 1(a)(i) In certain type of polar dielectric materials permanent electric diploes are oriented in specific
direction even in absence of external electric field. So these materials have polarization in
absence of electric field. Advantage of Ferro electric over dielectric is that Ferro electric has
very high value ( 10
4
-10
5
) of dielectric constant in compare to normal dielectric.
Sol. 1(a)(ii) water is example of a dielectric and has very high relative permittivity value equal to 80 while
example of Ferro electric is BaTiO
3
which has value of relative permittivity of the order of
2000.
Sol. 1(b) Silicon is preferred over Germanium for a fabrication of P-N junction transistors because:
(i) Higher Energy gap in Si than Ge.
(ii) Temperature limit of Si is 150
0
C while in Ge it is only 100
0
C
(iii)Leakage current is of the order of nA in case of Si while it is order of micro amp in Ge
(iv) Si has higher break down strength than Ge
(v) Oxide of Si is SiO
2
is insulator which is used in fabrication for isolation.
(vi) Si is available in abundance and is cheaper than Ge
(vii)Relative cost of electronic grade is 1 in Si while for Ge it is high.
Sol. 1(c) Fourier transforms of Autocorrelation function is power spectral density.
( )
FT
XX XX
R (w) PSD t o
Power spectral density of ( ) ( )
j
XX XX
R R e d
et
t = t t
}

( ) j
0
j j
0
e e d
e e d e e d
1 1
j j
o t et
ot et ot et
t
= t + t
+
o e o+ e
}
} }

( )
FT
XX 2 2
2
R Power spectral density
o
t =
o +e

Sol.1 (d) Apply to KCL at (1) & (2)

1 1 2 2
V V 12 V V 24
0 (1)
6 4 12 3
+
+ + + =

1 2
V V 36 = Because of super node concept (2)

1 1 2 2
2V 3V 36 V 4V 96
0
12
+ + + +
=

1 2
1 2
5V 5V 60 (3)
V V 36 (4)
+ =
=

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2

1
2
V 24V
V 12V
=
=

Sol. 1(e)
1 2
0 0
Q Q
10 & 120
4 5 4 30
= = +
tc tc

Solve charge density for both.
Let r is the distance at which potential is 50 Volt. (In spherical it is assumed that whole charge is
placed at centre of cell). Let r is the distance at which potential is calculated then

1 2
0 0
1 2
Q Q
50
4 r 4 r
Q &Q arealreadyknown
+ =
tc tc
Sol.1 (f) Cut-off frequency for parallel plate air filled waveguide
c
c
f
2a.m
=

( )
10
10
c
a 12cm Given &c 3 10 cm
3 10
f
12
= =
=

c
30
f GHz 2.5GHz
12
= = For Dominant mode:
Any signal those frequency is more than 2.5 GHz is passed through parallel plate wave guide
only 10GHz is passed through to parallel plate wave guide 0.1GHz & 1GHz are not passed through
the parallel plate waveguide.
Sol. 1(g) It will be simple circle. It is very easy question
Sol. 1(h) (a)(i) Let V
1
is the voltage at inverting terminal
Apply to KCL at node (1)

1 o 1 i
1 1
v v v v
0
R R

+ =

1
v 0 =

0 i
v v = thats a circuit inverted to input signal.
Sol. 1(h) (a)(ii) S
1
switch is OFF.
KCL at node (1)

1 o 1 i
1 1
v v v v
0
R R

+ =

1 i
v v =

i 0
v v = ; Thats a circuit act as voltage follower.
Sol. 1(h) (b)(i) when S
1
is OFF & S
2
ON

0 i
0
v v
v 5sin100 t
=
= t

3
R
L
C
C
M
when S
1
is OFF & S
2
OFF

1 o 1 i
1 1
1 i
0 1
v v v v
0
R R
v v
v v 5sin100 t

+ =
=
= = t

Sol. 1(h) (b)(ii) when S
1
is ON & S
2
is ON

o
v 0 =
When S
1
ON & S
2
OFF

1 0 1 i
1 1
v v v v
0
R R

+ =

1
0 i
0
v 0
v v
v 5sin100 t
=
=
= t

Sol.2 (a) Electrical equivalent of quartz crystal

L
s
= Series inductance which represents Mass of quartz crystal
R
s
= Series Resistance which represents the damping ratio of Quartz crystal.
C(C
S
)= Series capacitance which represents the spring const.
C
M
(C
P
) = Parallel capacitance which represents to electrostatic capacitance between two plate
of quartz crystal.

s s
s s M
1 1 1
seriesfrequency f
2 L C L C
e = =
t

p p
s p s p
s s
s p s p
1 1 1
Parallel frequency f
2
C C C C
L L
C C C C
e = = =
t
| | | |
| |
| |
+ +
\ . \ .

4
Sol. 2(b) Given data
C
s
= Series capacitance = 10 F
C
p
= Parallel capacitance = 10 F
L
s
= 10 mH = equivalent inductances

s
6 3
s s
1 1
f = 503.29Hz
2 L C
2 10 10 10 10

= =
t
t

p
f =
s p
s
s p
1
C C
2 L
C C
=
| |
t
|
|
+
\ .
3 6
1
2 10 10 5 10

=
t
=711.76Hz

6 6
s p 6
6
s p
C C
10 10 10 10
where 5 10 F
C C 20 10

= =
+

Sol. 2(c) Thyristor (also called silicon controlled rectifier or SCR) consists of alternate p and n layers (i.e., p-
n-p-n) forming three p-n junctions. The anode terminal is outside the p layer. A contact welded to
inner p layer (i.e., p2) forms the gate. Its symbol is as shown in Figure.

5
V-I Characteristics of Thyristor:
The v-i characteristic of a thyristor is shown in Figure. The behavior of a Thyristor can be explained by two
transistor model as shown in figure.
Thyristor can be turned on by applying a positive gate signal. Other triggering methods are dv/dt triggering,
high temperature triggering and light triggering. when a thyristor is triggered the gate loses control. It can be
turned off by decreasing the current to less than holding current. The turn on time of thyristor is less than
about 3 -s and turn off time is between 10-300 -s.
Sol.2 (d) Direct band gap semiconductor: In this type of semiconductor there is no change in value of k
and hence no change in momentum and kinetic energy during excitation from CB to VB. Since no change in
momentum and kinetic energy and hence these particles will be photons and energy will be emitted in form
of light. Examples are GaAs(Emits light in IR) ,GaAsP(Emits light in visible region).

Indirect band gap semiconductor: In this type of semiconductor there is change in value of k and hence
there is change in momentum and kinetic energy during excitation from CB to VB. Since there is change in
momentum and kinetic energy and hence these particles will emit energy in form of heat. Examples are
Ge&Si.

Sol.2(e) Silicon diode cannot be used in LED because Silicon is indirect band gap Semiconductors which
cant generate light or photon and it releases heat during transition from conduction band to valance
Band.LED will generate light only if material is direct band gap semiconductor.
Si can be used in photo-diode because photo diode is light detector and when light is falling on photo
diodes then new EHPs are created and value of reverse current is increased in proportion to falling
light.

6
I
1
R
L
I
2
50v
+
R
S I
v
s
200v
Sol.2 (f)
max
for silicon photo diode
( )
g
1.24
m
E ev
=
( )
g
E ev = Energy gap = 1.11 eV(At room temperature) for
max
.

max
1.24
1.1 m
1.10
= ~
Now responsivity (R)
Q (in meter)
1.24

=
For Maximum value of R Quantum efficiency should be 100% so
R
max
=1.1% for Si.
Sol.2 (g)
The basic idea behind magnetically levitated train is there is no physical contact between train and rail.
Since electron moves efficiently through a super conductor because there is no resistnace.In similar manner
MAGLEV (Magnetically Levitated) trains move more efficiently because there is no friction between wheel
and track. Trains can be made to "float" on strong superconducting magnets, virtually eliminating friction
between the train and its tracks. If Electromagnets are used then size will be high and they will waste much
of electrical energy as heat. Super conductors are used for generation of strong magnetic fields by use of
Meissner effect. Superconductors used in MAGLEV systems have been of low temperature variety for this
they must operate below Liquid Helium temperature (4.2
0
K).
Sol.3 (a)

Z L
I I I = +
Z L Zmax Lmin
Lmin
Zmax
200 50 150
I I I I
R R
But I 0
150 150
soR
I 40max
= + = +
=
= = 3.75K =

Z L
I I I = +
Zmin Lmax Lmax 3
Lmax Lmax
150 150
I I 5 I
R 3.75 10
40mA 5mA I I 35mA
= + = +
= + =

7
110V
I
3 I
2
I
1
+6v
10K
I
0
1.4K R
0
R
1
R
2
R
3
6v
Sol.3 (b)

(a)

R
D
is diode resistance = 20O
(b) ( )
( )
L
D L
V rms
I rms
R R
=
+

110 110 11
0.1078 107.8 mA
1000 20 1020 102
= = = = =
+

Peak load current (I
m
)
11
2 A
102
= 152.49mA =
(c) DC load current
m
I
=
t
48.56mA =
(d) AC load current rms valueof loadcurrent =
m
I
2
= =76.245mA
(e) DC diode voltage
m m D L
V I (R R ) +
= =
t t
=59.54Volt
Sol.3(c)

When
B
I 0 ~
C E
I I =
Apply KVL from 6Vto 6V + in left most T
x
.

E C
6 1.4I 0.7 10I 6 + + + =
Since
C E
I I =
E C
11.3
12 0.7 11.4I I 1mamp
11.4
= = ~

C 0
I I 1mA = =
For other transistor: (For calculation of I
1
):
12=10I
0
+0.7+300I
1
(Base current is neglected)
So I
1
=
1.3
300
=4.3mA
2
):
12=10I
0
+0.7+400I
2

8
So I
2
=
1.3
400
=3.25mA
3
):
12=10I
0
+0.7+500I
3
So I
3
=
1.3
500
=2.6mA
Sol.3 (d)
Value of voltage gain for Current source load invertor is:
1/ 2
n
D 1 2
2K W 1
Gain
L.I
| | | |
=
| |
+
\ . \ .

2
n
1 2
ref
K 100 A/ V
W 100 m
L 10 m
100
I 100 A
=
=
=
= =
=

Sol.4 (a) Energy of signal ( )
2
x t dt
=
}

( ) ( )( )
at
x t e u t Given
=
Energy of signal
2at
0
1
e dt
2a
=
}

Energy of signal ( ) ( )
2
1
x t X d
2
= e e
t
}

( ) x e = Fourier transform of x(t)
Fourier transform of ( )
at j
0
1
x t is e e dt
a j
e
= =
+ e
}

2
2 2
1
x( )
a
e =
+e

According condition given in question:

( ) ( )
2
2 2
1 1
0.95 x d Given
2a 2
1 1 1
0.95 d
2a 2 a
e
e
e
e
= e e
t
= e
t +e
}
}

1
0.95 1 1
tan
2 a 2 a a
e
e
e
=
t

9

1 1
1
0.95 tan tan
a a
0.95 2tan tan(85.5) 12.7
a a

e e | | | |
t =
| |
\ . \ .
e e
t = = =

Sol.4 (b)(i)
( ) ( ) ( )
1
x t x 1 t x 1 t = +
( ) ( )
FT j
x t 1 x e
e
+ e by using time shifting property
( ) ( )
FT j
x t 1 x e
e
+ e

( ) ( )
( ) ( )
FT j
FT j
x t 1 x e
x t 1 x e
e
e
e
e

( ) ( ) ( ) ( ) ( )
FT j j
x t 1 x t 1 X e X e 2X cos
e e
+ + e + e = e e
Sol.4 (b)(ii)
( ) ( )
2
x t x 4t 5 ? =
( ) ( )
FT 5j
x t 5 x e
e
e By using time shifting property
( )
5j
FT
4
1
x 4t 5 X e
4 4
e
e | |

|
\ .
By using time scaling property
Sol.4 (b) (iii) ( )
( )
2
3 2
d x t 1
x t
dt

=
( ) ( )
FT
x t X e

( )
( ) ( )
2
2
FT
2
d x t
j X
dt
e e By using time differentiation property

( )
( ) ( )
2
2
FT j
2
d x t 1
e j X
dt
e
e e
Sol.4(c)(i)
( ) ( ) ( ) ( )
( )
4t
y t 3e u t & x t u t
h t ?
= =
=

Taking Laplace transforms on both sides.

( ) ( )
st
Y s e y t dt
=
}
4t st
0
3e e dt

=
}
3
s 4
=
+

( )
1
X s
s
=
( ) ( ) ( )
( )
( )
( )
y(t) x(t) h(t) Y s X s H s
Y s
or H s
X s
= =
=

10
( )
( )
( )
3 s 4 4
3s
H s
s 4 s 4
+
= =
+ +

( )
4
H s 3 1
s 4
| |
=
|
+
\ .

( ) ( ) ( ) ( )
4t
h t 3 t 4e u t
= o
Sol.4(c)(ii)
( )
( ) ( )
t
y t ?
Given data
x t e u t
`
=

)

( )
3s
H s
s 4
=
+

( ) ( ) ( ) y t x t *h t =
( ) ( ) ( ) Y s X s H s =
( ) ( ) ( )
st t
0
1
x s x t e dt e u t dt
(s 1)

= = =
+
} }

( ) ( )
1 3s
x s &H s
s 1 s 4
= =
+ +

( )
( )( )
3s
Y s
s 4 s 1
=
+ +
4 1
s 4 s 1
=
+ +

( ) ( ) ( )
4t t
y t 4e u t e u t

=
Sol.4(d)
( ) ( ) ( )
k
q n x n q n 1 (i)
4
= +
( ) ( ) ( ) ( )
k
y n q n q n 1 ii
5
= +
Taking to z-transforms of equation (i)
( ) ( ) ( )
1
k
Q z x z Q z z
4

= +
| |
( )
( )
1
x z
Q z iii
kz
1
4
=
| |
|
\ .

Take to z-transforms of equation (ii)
( ) ( ) ( ) ( )
1
k
Y z Q z Q z z
5

= +
( ) ( ) ( )
1
k
Y z Q z 1 z iv
5

| |
= +
|
\ .

11
I
S
R
S
R
L
v
s
( )
( )
1
1
X z
k
Y z 1 z
k 5
1 z
4
| |
= +
|
| |
\ .
|
\ .

For BIBO stability:
k
1
4
<
Sol. 5(a)
Maximum Power transfer theorems:
According to maximum power transfer theorems power transferred to load resistance is maximum when
load resistance is equal to power source resistance.

Power transferred to
2
L S L
R I R =
where
S
S
S L
V
I
R R
=
+

Power transfer to
( )
2
S
L L 2
L S
V
R R
R R
=
+

Differentiate with respect to R
L

( ) ( )
( )
( )
2
S L L L S
2
S 4
L
L S
R R 2R R R
dP
V
dR
R R
+ +
+

For maximum or minima
L
dP
0
dR
= So ( )
2
S L L S L
R R 2R R R + = +
( )

L S
R R = At this cond
n
either maxima or minima will take place so to find out
2
2
L
d P
dR

( ) ( )
( )
2
S S L L
3
L
L S
V R R 2R
dP
dR
R R
+
=
+

( ) ( ) ( ) ( )
( )
( )
3 3 3 2
2
2
S L S L S L S L L S
6 2
L
L S
V R R 3 R R 2 R R 6R R R
d P
dR
R R
+ + + + +
=
+

( )
( ) ( )
( )
( )
( )
2
3 2
S
L S L L S 6
L S
2
S
L S L 4
L S
L S
V
4 R R 6R R R
R R
V
4R 4R 6R
R R
Put R R
= + + +
+
= +
+
=

12
R
S
R
L
v
s
j12
j12
j2
A
B

( )
( )
( )
( )
2 2
S S
S S S S 4 4
L S L S
V V
4R 4R 6R 2R
R R R R
= + =
+ +

2
2
L
d P
is negative
dR

So at
L S
R R = P is maximum value hence one can prove above condition.
Sol.5 (b)
If R
L
is fixed and R
S
is varied thats a formula is not a maximum power transfer condition to a load
resistance.

Power to load resistance =
2
S L
I R
where
S S S L
I V / R R = +
Power to load resistance =
( )
2
S
L 2
S L
V
R
R R

+

For R
S
varied differentiation of P with respect to P.
( )( )
( )
L S L 2
S 4
S
S L
0 2R R R
dP
V
dR
R R
+
=
+

For maxima or minima
S
dP
0
dR
=
So ( )
L S L
2R R R 0 + =
L S L
Either R 0 or R R 0 = + =
Load cant be zero not
and
S L
R R = is also not possible because source resistance cannot be negative.
So that R
S
= R
L
is not the condition for variable R
S
for maximum power transfer to load resistance.
Sol.5 (c)

For determination of value of Z
L
for maximum power transfer to Z
L
open Z
L
& find out Z
TH
across it.
Here j12 and 10 ohm will be in parallel and resultant will be in series with j12 and then finally in parallel
with j2 ohm.
th
Z 0.9756 3.219j = +

13
+
3V
x
i
2
i
1
v
x
+
v
1
+
v
2
For maximum power transfer to Z
L

L TH L
Z Z* Z 0.9756 7.219j = =

Sol.5 (d)

Apply the KVL in Loop (1) & Loop (2)
KVL in loop (1)
( )
( )
1 1 1 2
1 1 2
x 1 2
v 10i 50 i i 0
v 60i 50i (i)
v 50 i i
+ + + =
= +
= +

( )
2 x x
2 x
2 1 2
v 3v v 0
v 2v
v 50 2 i i
+ =
=
= +

( )
2 1 2
v 100i 100i ii =
( )
2 1 2
2
2 1
100i 100i v
v
i i iii
100
=
=

2
2 1
v
50i 50i (A)
2
=
Standard equation of h parameter models are:
1 11 1 12 2
2 21 1 22 2
v h i h v
v h i h v
= +
= +

2
1 1 1
v
v 60i 50i
2
=
2
1 1
v
v 10i (B)
2
=
By taking equation (A)& equation (B)
11 12
1
h 10 ; h
2
= O =
21 22
1
h 1; h
100
= =
11 12
21 22
1
h 10 ; h
2
1
h 1; h
100
= O =
= =

14
6cm
4cm
I =??
B
I =??
A
n = 10 Turns
n = 5 Turns
Sol.6 (a)
Just calculate the field due to power lines on telephone lines and then flux and then voltage difference.
Sol.6 (b)

Magnetic field intensity generated by coil A at centre is:
1
NI 10 1
H
2.r 2 4
= =
=1.25A/m
Magnetic field intensity generated by coil B at centre of coil A is:
2 2
2 2 2 3/ 2 2 2 3/ 2
NI a 5 I 6
H
2.(r a ) 2(6 12 )

= =
+ +
A/m
If total field at the centre of coil A is zero then H
1
+H
2
=0
Now solve value of I and it should be 33.5 Amp.
Sol.6(C)
Value of force is ( ) F I L B BILa N
|
= =
Now value of work done is:
b
a
2
0
0
2
0 0
0
W F.dl
W B ILa .rd a
W B IL.rd 2 B ILr J
t
| |
t
=
= |
= | = t
}
}
}

Time taken for N revolution is 60 sec then for one revolution it would be
60
sec
N
.
So Power =
0 0
2 B ILr N B ILr W
P N
t 60 30
t t
= = =
By putting the values
0
N B ILr 25 3.14 0.6 1.2 0.02 471
P 0.034 Watt
30 30 12500
t
= = = =
If P=1.5 W then
0
N B ILr 25 3.14 B 1.2 0.02
1.5
30 30
B 23.89T
t
= =
=

Sol.6 (d)
Equation of E is
0 x
E E cos(wt z)a = |
0 y
Equationfor H H cos(wt z)a = |

15
+
R
4
R
2
R
1
R
3
Sig
+
Sig
R
2
R
1
R
3
R
1
V
01
V
01
+
R+ R A
V
R
Where

0
0
6 7
6 6 12
6 4
E j
H j
j 2 2.5 10 1 4 10
61.7 10 j 2 2.5 10 8.86 10
19.72j
61.7 10 j 1.39 10
e
= q =
o+ ec
t t
q =
+ t
q =
+

Further you can solve it calculate magnitude of H
0

Sol.7 (a) This is standard and basic question:

( )
0
V Sig Sig gain
+
=

By concept of wheat stone bridge (easy derivation)

R
01
V R
V
R 4
R
2
A
=
A | |
+
|
\ .

Now by use of OPAMP
2 2
0 01 R
1 1
R R R
V 2V 1 V 1
R R IR R
| | | | A
= + = +
| |
+ A
\ . \ .

16
+
I
+
I
V
x
I
12K
10K
v
o
25mV
o
I
P
5v
12K
Sol.7 (b)

Value of
25mv 0
I
10k
=

3 4
I 25 10 10
I 2.5 A

=
=

3 6
x
x
0 V 12 10 2.5 10
V 30mV
=
=

Now
p
0 30mV
I 2.5 A
12k
+
= =
If optical power is
in
P and Responsivity of photo diode is R then
Then photo current I
P
related to incident optical power is
P in
I R.P =
where
( ) Q meter
R
1.24

=
Now ( )
0.65 1.32
R A/W
1.24
=
( ) R 0.692 A/W =
But
in
A
2.5 A 0.692 P
W
| |
=
|
\ .

So
in
2.5 A
P W
0.692 A

in
P 3.6 Watt =
Sol.7(c)
ext
G
P
R Q V 0.7 1.43V 1V
I
SoI can besolved
= = = =

Now Apply KVL equation:

20=150I+1.8+V
CE
+1000I
Here V
CE
value will be low so output will be at logic low level

Conventional Paper-I-2013 Solutions: (ECE)

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