Silicon NPN Epitaxial Planar: Application

2SC535
Silicon NPN Epitaxial Planar

Application
VHF amplifier, mixer, local oscillator
Outline
1. Emitter
2. Collector
3. Base
TO-92 (2)
3
2
1
www.agelectronica.com www.agelectronica.com


2SC535
2
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
30 V
Collector to emitter voltage V
CEO
20 V
Emitter to base voltage V
EBO
4 V
Collector current I
C
20 mA
Collector power dissipation P
C
100 mW
Junction temperature Tj 150 C
Storage temperature Tstg 55 to +150 C


2SC535
3
Electrical Characteristics (Ta = 25C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30 V I
C
= 10 A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
20 V I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
4 V I
E
= 10 A, I
C
= 0
Collector cutoff current I
CBO
0.5 A V
CB
= 10 V, I
E
= 0
DC current transfer ratio h
FE
*
1
60 200 V
CE
= 6 V, I
C
= 1 mA
Base to emitter voltage V
BE
0.72 V V
CE
= 6 V, I
C
= 1 mA
Collector to emitter saturation
voltage
V
CE(sat)
0.17 V I
C
= 20 mA, I
B
=4 mA
Gain bandwidth product f
T
450 940 MHz V
CE
= 6 V, I
C
= 5 mA
Collector output capacitance Cob 0.9 1.2 pF V
CB
= 10 V, I
E
= 0, f = 1 MHz
Power gain PG 17 20 dB V
CE
= 6 V, I
C
= 1 mA,
f = 100 MHz
Noise figure NF 3.5 5.5 dB V
CE
= 6 V, I
C
= 1 mA,
f = 100 MHz, R
g
= 50
Input admittance (typ) yie 1.3 + j5.3 mS V
CE
= 6 V, I
C
= 1 mA,
f = 100 MHz
Reverse transfer admittance
(typ)
yre 0.078 j0.41 mS
Foward transfer admittance
(typ)
yfe 32 j10 mS
Output admittance (typ) yoe 0.08 + j0.82 mS
Note: 1. The 2SC535 is grouped by h
FE
as follows.
B C
60 to 120 100 to 200


2SC535
4
Maximum Collector Dissipation Curve
150
100
50
0 50 150 100
Ambient Tmperature Ta (C)
C
o
l
l
e
c
t
o
r

p
o
w
e
r

d
i
s
s
i
p
a
t
i
o
n

P
C

(
m
W
)
Typical Output Characteristics
20
16
12
8
4
0 4 16 12
I
B
= 0
P
C
=

1
0
0

m
W
25 A
50
75
100
125
Collector to Emitter Voltage V
CE
(V)
C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t

I
C

(
m
A
)
20 8
150
300
175
200
225
250
275
Typical Output Characteristics
50
40
30
20
10A
I
B
= 0
5
4
3
2
1
0 4 12 20 8
CE
(V)
C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t

I
C

(
m
A
)
16
DC Current Transfer Ratio vs.
Collector Current
Collector Current I
C
(mA)
D
C

C
u
r
r
e
n
t

T
r
a
n
s
f
e
r

r
a
t
i
o

h
F
E
V
CE
= 6 V
120
100
80
60
40
20
0
0.1 0.5 10 5 0.2 2 20 1.0


2SC535
5
Typical Transfer Cahracteristics (1)
C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t

I
C

(
m
A
)
V
CE
= 6 V
20
16
12
8
4
0
0.6 0.7
Base to Emitter Voltage V
BE
(V)
0.8
Typical Transfer Cahracteristics (2)
C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t

I
C

(
m
A
)
V
CE
= 6 V
5
4
3
2
1
0
0.6 0.7
Base to Emitter Voltage V
BE
(V)
0.8
Collector Output Capacitance vs.
Collector to Base Voltage
Collector to Base Voltage V
CB
(V)
C
o
l
l
e
c
t
o
r

O
u
t
p
u
t

C
a
p
a
c
i
t
a
n
c
e

C
o
b

(
p
F
)
f = 1 MHz
I
E
= 0
1.5
1.3
1.1
0.9
0.7
0.5
0.3 10 1.0 30 3


2SC535
6
Gain Bandwidth Product vs.
Collector Current
Collector Current I
C
(mA)
V
CE
= 6 V
1,000
800
600
400
200
0
0.1 0.5 2 10 0.2 1.0 5 20
G
a
i
n

B
a
n
d
w
i
d
t
h

P
r
o
d
u
c
t

f
T

(
M
H
z
)
Noise Figure vs. Collector Current
Collector Current I
C
(mA)
N
o
i
s
e

f
i
g
u
r
e

N
F

(
d
B
)
I
C
= 1 mA
f = 100 MHz
R
g
= 50
8
6
4
2
0
0.2 1.0 5 0.5 2 10


2SC535
7
Noise Figure vs. Signal Source Resistance
Signal Source Resistance R
g
()
N
o
i
s
e

f
i
g
u
r
e

N
F

(
d
B
)
V
CE
= 6 V
I
C
= 1 mA
f = 100 MHz
8
6
4
2
0
20 100 500 50 200 1,000
N
o
i
s
e

f
i
g
u
r
e

N
F

(
d
B
)
8
6
4
2
0
1 5 2 10 20
Noise Figure vs. Collector to
Emitter Voltage
Collecter to Emitter Voltage V
CE
(V)
V
CE
= 6 V
f = 100 MHz
R
g
= 50
100 MHz Power Gain Test Circuit
300 p
3 k
500
0.01
0.1
0.01
10 p
max
V
EE
V
CC
0.01
D.U.T.
IN
f = 100 MHz
R
g
= 100
OUT
R
l
= 550
Unit R :
C : F
Input Admittance Characteristics
Input Conductance g
ie
(mS)
I
n
p
u
t

S
u
c
e
p
t
a
n
c
e

b
i
e

(
m
S
)
y
ie
= g
ie
+ jb
ie
V
CE
= 6 V
f = 200 MHz
I
C
= 1 mA
150
150
50
70
70
100
100
200
2 mA
3 mA
5 mA
50 MHz
18
16
14
12
10
8
6
4
2
0 2 8 14 6 12 18 4 10 16


2SC535
8
Reverse Transfer Admittance
Characteristics
f = 50 MHz
70
100
150
200
I
C
= 5 mA 3 2 1
1.0
0.8
0.6
0.4
0.2
0 0.04 0.16 0.12 0.08
Reverse Transfer Conductance g
re
(mS)
y
re
= g
re
+ jb
re
V
CE
= 6 V
R
e
v
e
r
s
e

T
r
a
n
s
f
e
r

S
u
c
e
p
t
a
n
c
e

b
r
e

(
m
S
)
0.20
Forward Transfer Admittance
Characteristics
120
100
80
60
40
20
I
C
= 1 mA
2 mA
3 mA
5 mA
200 150
100
70
0 20 60 40 80 120 100
Forward Transfer Conductance g
fe
(mS)
F
o
r
w
a
r
d

T
r
a
n
s
f
e
r

S
u
c
e
p
t
a
n
c
e

b
f
e

(
m
S
)
f = 50 MHz
y
fe
= g
fe
+ jb
fe
V
CE
= 6 V
Output Admittance Characteristics
Output Conductance g
oe
(mS)
y
oe
= g
oe
+ jb
oe
V
CE
= 6 V
I
C
= 1 mA 2 3 5
2.4
2.0
1.6
1.2
0.8
0.4
0 0.1 0.6 0.4 0.3 0.2 0.5
O
u
t
p
u
t

S
u
c
e
p
t
a
n
c
e

b
o
e

(
m
S
)
150
100
70
50
f = 200 MHz
Input Admittance vs. Collector
to Emitter Voltage
CE
(V)
I
n
p
u
t

A
d
m
i
t
t
a
n
c
e

y
i
e

(
m
S
)
10
5
2
1.0
0.5
1 5 20 2 10
y
ie
= g
ie
+ jb
ie
I
C
= 1 mA
f = 100 MHz
b
ie
g
ie


2SC535
9
Input Admittance vs. Collector Current
Collector Current I
C
(mA)
I
n
p
u
t

A
d
m
i
t
t
a
n
c
e

y
i
e

(
m
S
)
y
ie
= g
ie
+ jb
ie
V
CE
= 6 V
f = 100 MHz
20
10
5
2
1.0
0.5
0.2
0.1 0.5 2 10 0.2 1.0 5
b
ie
g
ie
Reverse Transfer Admittance vs.
Collector to Emitter Voltage
CE
(V)
R
e
v
e
r
s
e

T
r
a
n
s
f
e
r

S
u
c
e
p
t
a
n
c
e

b
r
e

(
m
S
)
R
e
v
e
r
s
e

T
r
a
n
s
f
e
r

C
o
n
d
u
c
t
a
n
c
e

g
r
e

(
m
S
)
1.0 0.1
0.05
0.02
0.01
0.005
5
0.2
0.1
0.05
1 5 20 2 10
y
re
= g
re
+ jb
re
I
C
= 1 mA
f = 100 MHz
b
re
g
re
y
re
= g
re
+ jb
re
V
CE
= 6 V
f = 100 MHz
Reverse Transrer Admittance vs.
Collector Current
Collector Current I
C
(mA)
R
e
v
e
r
s
e

T
r
a
n
s
f
e
r

C
o
n
d
u
c
t
a
n
c
e

g
r
e

(
m
S
)
R
e
v
e
r
s
e

T
r
a
n
s
f
e
r

S
u
c
e
p
t
a
n
c
e

b
r
e

(
m
S
)
b
re
g
re
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.1 0.5 2 10 0.2 1.0 5
Forward Transfer Admittance vs.
Collector to Emitter Voltage
CE
(V)
F
o
r
w
a
r
d

T
r
a
n
s
f
e
r

A
d
m
i
t
t
a
n
c
e

y
i
e

(
m
S
)
100
50
20
10
5
1 5 20 2 10
y
fe
= g
fe
+ jb
fe
I
C
= 1 mA
f = 100 MHz
b
fe
g
fe


2SC535
10
y
fe
= g
fe
+ jb
fe
V
CE
= 6 V
f = 100 MHz
Forward Transrer Admittance vs.
Collector Current
Collector Current I
C
(mA)
F
o
r
w
a
r
d

T
r
a
n
s
r
e
r

A
d
m
i
t
t
a
n
c
e

y
i
e

(
m
S
)
b
fe
g
fe
100
50
20
10
5
2
1
0.1 0.5 2 10 0.2 1.0 5
Output Admittance vs. Collector
to Emitter Voltage
CE
(V)
O
u
t
p
u
t

S
u
c
e
p
t
a
n
c
e

b
o
e

(
m
S
)
O
u
t
p
u
t

C
o
n
d
u
c
t
a
n
c
e

g
o
e

(
m
S
)
2.0
1.0
0.5
0.2
0.1
1 5 20
0.01
0.02
0.05
0.1
0.2
2 10
y
eo
= g
oe
+ jb
oe
I
C
= 1 mA
f = 100 MHz
b
oe
g
oe
Output Admittance vs. Collector Current
Collector Current I
C
(mA)
O
u
t
p
u
t

A
d
m
i
t
t
a
n
c
e

y
o
e

(
m
S
)
0.1 0.5 2 10 0.2 1.0 5
2.0
1.0
0.5
0.2
0.1
0.05
0.02
y
oe
= g
oe
+ jb
oe
V
CE
= 6 V
f = 100 MHz
b
oe
g
oe


0.60 Max
0.45 0.1
4.8 0.3 3.8 0.3
5
.
0

0
.
2
0
.
7
2
.
3

M
a
x
1
2
.
7

M
i
n
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (2)
Conforms
Conforms
0.25 g
Unit: mm


Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third partys rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachis sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
URL NorthAmerica : http:semiconductor.hitachi.com/
Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Europe GmbH
Electronic components Group
Dornacher Strae 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to:



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2SC535

Silicon NPN Epitaxial Planar

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