2SK1056, 2SK1057, 2SK1058

Silicon N-Channel MOS FET

ADE-208-1244 (Z)
1st. Edition
Mar. 2001
Application
Low frequency power amplifier
Complementary pair with 2SJ160, 2SJ161 and 2SJ162
Features
Good frequency characteristic
High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Suitable for audio power amplifier
2SK1056, 2SK1057, 2SK1058
2
Outline
1
2
3
TO-3P
1. Gate
2. Source
(Flange)
3. Drain
D
G
S
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Drain to source voltage 2SK1056 V
DSX
120 V
2SK1057 140
2SK1058 160
Gate to source voltage V
GSS
15 V
Drain current I
D
7 A
Body to drain diode reverse drain current I
DR
7 A
Channel dissipation Pch*
1
100 W
Channel temperature Tch 150 C
Storage temperature Tstg 55 to +150 C
Note: 1. Value at T
C
= 25C
2SK1056, 2SK1057, 2SK1058
3
Electrical Characteristics (Ta = 25C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SK1056 V
(BR)DSX
120 V I
D
= 10 mA, V
GS
= 10 V
breakdown voltage 2SK1057 140
2SK1058 160
Gate to source breakdown
voltage
V
(BR)GSS
15 V I
G
= 100 A, V
DS
= 0
Gate to source cutoff voltage V
GS(off)
0.15 1.45 V I
D
= 100 mA, V
DS
= 10 V
Drain to source saturation
voltage
V
DS(sat)
12 V I
D
= 7 A, V
GD
= 0 *
1
Forward transfer admittance |yfs| 0.7 1.0 1.4 S I
D
= 3 A, V
DS
= 10 V *
1
Input capacitance Ciss 600 pF V
GS
= 5 V, V
DS
= 10 V,
Output capacitance Coss 350 pF f = 1 MHz
Reverse transfer capacitance Crss 10 pF
Turn-on time t
on
180 ns V
DD
= 20 V, I
D
= 4 A,
Turn-off time t
off
60 ns
Note: 1. Pulse test
2SK1056, 2SK1057, 2SK1058
4
50 100 0
Case Temperature T
C
(C)
150
50
C
h
a
n
n
e
l

D
i
s
s
i
p
a
t
i
o
n


P
c
h


(
W
)
Power vs. Temperature Derating
100
150
Maximum Safe Operation Area
D
r
a
i
n

C
u
r
r
e
n
t


I
D


(
A
)
10 20 50
1.0
2
5
100
10
20
Drain to Source Voltage V
DS
(V)
5 500
0.5
200
0.2
I
D

max
(Continuous)
Ta = 25C
P
W

=

1
0

m
s


1

s
h
o
t
P
W

=

1
0
0

m
s


1

s
h
o
t
P
W

=

1

s


1

s
h
o
t
D
C

O
p
e
r
a
t
i
o
n

(
T
C

=

2
5

C
)
2SK1056 2SK1057
2SK1058
Typical Output Characteristics
30
Drain to Source Voltage V
DS
(V)
40 20 10 50
D
r
a
i
n

C
u
r
r
e
n
t


I
D


(
A
)
0
2
4
6
8
0
10
V
GS
= 10 V
T
C
= 25C
1
2
0
5
6
7
8
9
P
c
h
=
1
0
0
W
3
4
Typical Transfer Characteristics
1.2
Gate to Source Voltage V
GS
(V)
1.6 0.8 0.4 0 2.0
0.2
0.4
0.6
0.8
1.0
0
D
r
a
i
n

C
u
r
r
e
n
t


I
D


(
A
)
T
C
=

2
5

C
7
5
V
DS
= 10 V
2
5
2SK1056, 2SK1057, 2SK1058
5
Drain to Source Saturation
Voltage vs. Drain Current
1.0
Drain Current I
D
(A)
2 0.5 0.2 5
1.0
2
5
10
0.1
0.5
D
r
a
i
n

t
o

S
o
u
r
c
e

S
a
t
u
r
a
t
i
o
n

V
o
l
t
a
g
e
V
D
S

(
o
n
)


(
V
)
0.2
0.1
10
T
C

=

2
5

C
2
5

C


7
5

C
V
GD
= 0
Drain to Source Voltage vs.
Gate to Source Voltage
6
Gate to Source Voltage V
GS
(V)
8 4 2 0 10
4
6
8
10
0
2
D
r
a
i
n

t
o

S
o
u
r
c
e

V
o
l
t
a
g
e


V
D
S


(
V
)
I
D
= 1 A
5A
T
C
= 25C
2A
Input Capacitance vs. Gate
Source Voltage
1000
500
200
100
I
n
p
u
t

C
a
p
a
c
i
t
a
n
c
e


C
i
s
s


(
p
F
)
0 2 4 10
Gate to Source Voltage V
GS
(V)
6 8
V
DS
= 10 V
f = 1 MHz
Forward Transfer Admittance
vs. Frequency
3.0
1.0
0.3
0.1
0.03
0.01
0.003
10 k 30 k 100 k 300 k 1 M 10 M
Frequency f (Hz)
3 M
F
o
r
w
a
r
d

T
r
a
n
s
f
e
r

A
d
m
i
t
t
a
n
c
e

y
f
s

(
S
)
T
C
= 25C
V
DS
= 10 V
I
D
= 2 A
2SK1056, 2SK1057, 2SK1058
6
Switching Time vs. Drain Current
500
200
100
50
20
10
5
0.1 0.2 0.5 1.0 2 10
Drain Current I
D
(A)
5
S
w
i
t
c
h
i
n
g

T
i
m
e


t
o
n
,
t
o
f
f


(
n
s
)
t
on
t
off
Output
R
L
= 2
20 V
50
Input
PW = 50s
duty ratio
= 1 %
Switching Time Test Circuit
90 %
10 %
90 %
10 %
Output
Input
t
on
t
off
Waveforms
2SK1056, 2SK1057, 2SK1058
7
Package Dimensions
3.2 0.2
4.8 0.2
1.5
0
.
3
2.8
0.6 0.2 1.0 0.2
1
8
.
0

0
.
5
1
9
.
9

0
.
2
15.6 0.3
0
.
5
1
.
0
5
.
0

0
.
3
1.6
1.4 Max 2.0
2
.
0
1
4
.
9

0
.
2
3.6 0.9
1.0
5.45 0.5 5.45 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TO-3P

Conforms
5.0 g
As of January, 2001
Unit: mm
2SK1056, 2SK1057, 2SK1058
8
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