1 John D.

Cressler, 5/09
SiGe Technology:
New Research Directions and
Emerging Application Opportunities
John D. Cressler
Ken Byers Professor
School of Electrical and Computer Engineering
Georgia Tech, Atlanta, GA 30332-0250 USA
cressler@ece.gatech.edu
IEEE Southeastern Michigan Chapter IV, Ann Arbor, MI, May 2009
IEEE Electron Devices Society Distinguished Lecture
This work was supported by NASA, DTRA, IBM, DARPA, JPL, TI, and NSC
2 John D. Cressler, 5/09
3 John D. Cressler, 5/09
A few monolayers
of SiGe Goes Here
Very Carefully!
A Level-Set on Miracles
4 John D. Cressler, 5/09
Outline
Some Reminders on SiGe
Scaling Trends and Performance Limits
Using SiGe for Radar Systems
Using SiGe for High-speed Analog
Using SiGe in Extreme Environments
Summary
5 John D. Cressler, 5/09
Practice Bandgap Engineering
but do it in Silicon!
SiGe Strained Layer Epi
E
V
The Bright Idea!
6 John D. Cressler, 5/09
Seamless Integration of SiGe into Si
When You Do It Right
No Evidence
of Deposition!
100 nm
7 John D. Cressler, 5/09
The SiGe HBT
The Idea: Put Graded Ge Layer into the Base of a Si BJT
Primary Consequences:
smaller base bandgap increases electron injection ( )
field from graded base bandgap decreases base transit time (f
T
)
base bandgap grading produces higher Early voltage (V
A
)
decouples base profile from performance metrics
SiGe = III-V Speed + Si Manufacturing: Win-Win!
8 John D. Cressler, 5/09
The SiGe HBT
E B C
SiGe
50 nm SiGe = III-V Speed + Si Manufacturing
Win-Win!
Conventional Shallow and Deep Trench Isolation + CMOS BEOL
Unconditionally Stable, SiGe Epitaxial Base Profile
100% Si Manufacturing Compatibility
SiGe HBT + Si CMOS on wafer
9 John D. Cressler, 5/09
SiGe Success Story
1G
2G
3G
4G
Rapid Generational Evolution (full SiGe BiCMOS)
Significant In-roads in Communications / Analog ICs
Important Point: 200 GHz @ 130 nm! (2G better than CMOS)
(130 nm)
(180 nm)
(500 nm)
10 John D. Cressler, 5/09
SiGe Apps
Defense
Navigation
Automotive
Communications
1999 2000 2001 2002 2003 2004 2005 2006
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
W
o
r
l
d
w
i
d
e

C
h
i
p

S
a
l
e
s
In Billions of US $
SiGe, CAGR = 61.3%
GaAs, CAGR = 8.7%
Years


Defense
Navigation
Automotive
Communications
SiGe Analog/MS ICs
Are a Major Driver!
11 John D. Cressler, 5/09
SiGe for Radar Systems
- single chip T/R for phased arrays, space-based radar (2-10 GHz & up)
- automotive radar (24, 77 GHz)
SiGe for Millimeter-wave Communications
- Gb/s short range wireless links (60, 94 GHz)
- cognitive radio / frequency-agile WLAN / 100 Gb Ethernet
SiGe for THz Sensing, Imaging, and Communications
- imaging / radar systems, diagnostics, comm (94 GHz, 100-300 GHz)
SiGe for Analog Applications
- the emerging role of C-SiGe (npn + pnp) + data conversion (ADC limits)
SiGe for Extreme Environment Electronics
- extreme temperatures (4K to 300C) + radiation (e.g., space systems)
SiGe for Electronic Warfare
- extreme wideband transceivers (20 MHz 20 GHz)
- dynamic range enhanced receivers
Some New Opportunities
12 John D. Cressler, 5/09
SiGe for Radar Systems
- single chip T/R for phased arrays, space-based radar (2-10 GHz & up)
- automotive radar (24, 77 GHz)
SiGe for Millimeter-wave Communications
- Gb/s short range wireless links (60, 94 GHz)
- cognitive radio / frequency-agile WLAN / 100 Gb Ethernet
SiGe for THz Sensing, Imaging, and Communications
- imaging / radar systems, diagnostics, comm (94 GHz, 100-300 GHz)
SiGe for Analog Applications
- the emerging role of C-SiGe (npn + pnp) + data conversion (ADC limits)
SiGe for Extreme Environment Electronics
- extreme temperatures (4K to 300C) + radiation (e.g., space systems)
SiGe for Electronic Warfare
- extreme wideband transceivers (20 MHz 20 GHz)
- dynamic range enhanced receivers
Some New Opportunities
13 John D. Cressler, 5/09
SiGe HBT vs CMOS
If Cost Were No Object, III-V Devices Would Always Dominate
Si-based Solutions in Terms of Raw Speed and Breakdown Voltage,
BUT Integration and Cost Increasingly Decide Things
Clearly Both SiGe HBTs and (Strained-Si) CMOS Are Capable of
Very Frequency Operation, BUT That Is Not the Whole Story
Some Key Advantages SiGe HBTs Have Over CMOS:
- for equal performance, SiGe requires less aggressive lith (2 gen)
- lith delta = cost delta (130 nm SiGe costs less than 65 nm CMOS)
- SiGe HBTs give higher BVs at fixed performance (BV
CEO
vs BV
CBO
)
- SiGe HBTs are better for generating CW power at fixed frequency
- g
m
/m
2
is MUCH larger for SiGe HBTs (need BIG nFETs for high f
max
)
- 1/f noise is 100x lower in SiGe HBTs; much better matching
- SiGe HBTs have better output conductance at fixed scaling node
- modeling of SiGe HBTs is easier for high-frequency design
- SiGe HBTs have built-in total dose radiation hardness for space
- SiGe HBTs are natural for mixed-signal & BiCMOS = HBTs + CMOS
Some Thoughts on the Matter
My Opinion: SiGe BiCMOS at a More Conservative Node Is Often Better Suited
for MANY Applications Than Aggressively-Scaled CMOS
14 John D. Cressler, 5/09
Strain Engineering in Si
Strained Si CMOS
SiGe HBTs
SiGe MODFETs
All Are:
Strain-Enhanced
Si-based Transistors
Close Cousins!
15 John D. Cressler, 5/09
Some Morals to the Story:
1) CMOS is Cheaper Than SiGe at Fixed Scaling Node
2) SiGe is Cheaper Than CMOS at Fixed Performance
3) SiGe HBTs are More Natural for RF/Analog Design
4) BiCMOS Often is Optimal for Integrated Solutions
Q: Where is SiGe the Best Fit?
16 John D. Cressler, 5/09
Outline
Some Reminders on SiGe
Scaling Trends and Performance Limits
Using SiGe for Radar Systems
Using SiGe for High-speed Analog
Using SiGe in Extreme Environments
Summary
17 John D. Cressler, 5/09
TeraHertz Applications
Pic. avail. at http://www.advancedphotonix.com/
Imaging for Quality Control
Detection of Non-Metallic Objects
Medical Diagnostics
Radio Astronomy
Ultra-Wideband Communications (fast and secure)
THz Active Circuits + ICs ??
300 GHz
Emerging THz Electronics Applications (100-300 GHz)
18 John D. Cressler, 5/09
Cooling a SiGe HBT Emulates Vertical + Lateral Scaling
- v
sat
, R
B
, and C
CB
as T better current drive, parasitics
- and Ge grading (E
g,Ge
(grade)/kT) more effective as T
Cryo-T as a Scaling Knob
Classical Scaling (300K):
- vertical: N
C ,
N
B ,
W
B
Pros:
E
,
C
,
CSCL
, and

Cons: C
CB
and R
B
, BV
CEO
- lateral:
Pros: R
B
, C
CB
and C
EB
Cons: R
E
and R
C
- innovation needed
- moral: scaling isnt free!
300 K
19 John D. Cressler, 5/09
f
T
+ f
max
> 1 THz in SiGe Is Clearly Possible (at very modest lith)
Both f
T
and f
max
above 500 GHz at Cryo-T (T = scaling knob)
Goal: Useful BV @ 500 GHz (BV
CEO
> 1.5 V + BV
CBO
> 5.5 V)
SiGe Performance Limits
8HP
200-500 GHz @ 130 nm Node!
20 John D. Cressler, 5/09
A 300K Scaling Roadmap for SiGe HBTs
Can We Do This at 300K?
e.g.,
EU DOT5
Project
21 John D. Cressler, 5/09
Outline
Some Reminders on SiGe
Scaling Trends and Performance Limits
Using SiGe for Radar Systems
Using SiGe for High-speed Analog
Using SiGe in Extreme Environments
Summary
22 John D. Cressler, 5/09
DoD Radar T/R Modules
X-Band Phased Array Radar
- realized with III-V MMICs, assembled into T/R MCMs ($1k each)
- employs high power density approach (1 MW to run 25k HPD T/R modules)
- costly to deploy and operate
25,000 high
power multi-
chip modules
1 MW diesel
generator
liquid/air
heat
exchanger
1990s
Courtesy of M. Mitchell
T/R
THAAD
Radar
23 John D. Cressler, 5/09
A New DoD Radar Vision
A New Radar Paradigm
- panel based + uses low power density approach (reduced prime power)
- T/R = low-cost + efficient + highly integrated (with digital control)
The Future
SiGe T/R
Multi-Chip
Panel
Multi-Panel Array
Courtesy of M. Mitchell
Begs for a SiGe BiCMOS Solution!
24 John D. Cressler, 5/09
RF
Manifold
In/Out
PA
From
Radiator-A
T/R Module Topology
From
Radiator-B
3-bit
Phase
Shifter
Pre-Amp Pre-Gain
SP3T
Switch
LNA-B
LNA-A
LNA
Switch Switch
1-bit
Phase
Shifter
4-bit Phase Shifter
with integrated LNA
RX Mode Challenges
- need very aggressive LNA
- must balance gain, linearity, and NF
- need low power dissipation
- need a good phase shifter
TX Mode Challenges
- must deliver necessary output power
- need high power efficiency
- need high gain + stability
BiCMOS Design Optimum
SiGe is an Ideal Fit
Single chip solution
25 John D. Cressler, 5/09
V
CC
= 2.5 V, I
C
= 6 mA = 15 mW
X-band LNA
1.5 dB
Radar Spec Demands NF < 2.0 dB Across Band
26 John D. Cressler, 5/09
Compare MOS Phase Shifter to HBT Phase Shifter
Maintain Same Design Methodology
- target 4-bit phase shifter
- use similar HP and LP filter sections
- utilize meander layout for reasonable aspect ratio
MOS vs HBT Shifters
HBT MOS
27 John D. Cressler, 5/09
SiGe PA Design Issues
Understand Voltage Constraints / Instabilities
Leverage CB-forced I
E
Mode for PA Voltage Swing
Power Cell Layout Optimization For Thermal Coupling
125 mW/ 40 dB gain
25% PAE X-band PA
HP + HB Cascode
850 mW/ 11 dB gain
18% PAE X-band PA
HP + HB Cascode
28 John D. Cressler, 5/09
SiGe T/R Results
P
out
> 22 dBm
P1dB > 20 dBm
TX Gain > 17 dB
PAE = 28%
NF < 3.5 dB
RX Gain > 15 dB
IIP3 = -10 dBm
RX TX
RX TX
13 mm
2
29 John D. Cressler, 5/09
SiGe Automotive Radar
24 GHz Short Range Radar + 77 GHz Long Range Radar
- nice fit for SiGe technology (2G SiGe for SRR + 3G SiGe for LRR)
- in the EU 24G SRR works until 2013, and then moves to 79G (LRR = 77G)
Courtesy of SARA
SRR LRR
Integration is Key
30 John D. Cressler, 5/09
A Future SiGe Radar Path
Multilayer Organic
Substrate (LCP)
Embedded
SiGe T/R
Circuits
Integrated RF MEMS
Phase Shifters
Integrated
SiGe T/R
on Flexible
Multilayer
Organic
Substrate
3D X-band to mm-wave SiGe Integrated Radars
- flexible + low-cost + multilayer + wafer scale
- RF MEMS phase shifters + antennae
- for space-based radar & comm systems
85 90 95 100
2
4
6
8
10
12
14
Measured Gain & Noise Figure
Gain
NF
Frequency (GHz)
W-band SiGe LNA
P1dB = -12.5 dBm
IIP3 = -8 dBm
Collaboration with
John Papapolymerou and Kevin Kornegay
G
a
i
n

a
n
d

N
o
i
s
e

(
d
B
)
31 John D. Cressler, 5/09
Outline
Some Reminders on SiGe
Scaling Trends and Performance Limits
Using SiGe for Radar Systems
Using SiGe for High-speed Analog
Using SiGe in Extreme Environments
Summary
32 John D. Cressler, 5/09
C-SiGe Leverage
Q: Complementary SiGe HBT Technology (C-SiGe)?
Some Possibilities:
- address issues analog C-Si BJTs have inherent trouble with:
- achieving high current gain for both npn + pnp
- achieving high speed for both npn + pnp
- achieving high output resistance for both npn + pnp
- decoupling gain / speed / V
A
from base profile design
- enables a future performance scaling path for analog IC apps
MANY Intriguing Possibilities
Fact: C-Si BiCMOS (npn + pnp) is the Gold Standard for
High-performance Analog ICs (high value add)
33 John D. Cressler, 5/09
TIs BiCOM3X C-SiGe
Balanced 25 GHz f
T
/ 60 GHz f
max
, 6V BV
CEO
C-SiGe Platform
Thick Film SOI for Isolation
Being Used Leading-Edge Analog Parts (500 MS/s 14 bit ADC)
npn SiGe HBT
pnp SiGe HBT npn SiGe HBT
34 John D. Cressler, 5/09
IHP C-SiGe Technology
IHPs C-SiGe HBT Technology
- low R
C
and C
CS
collector construction (no STI between E and C)
- reduced phosphorus diffusion in the C-doped base
- npn SiGe HBT: peak f
T
/ BV
CEO
of 170 GHz / 1.9 V
- pnp SiGe HBT: peak f
T
/ BV
CEO
of 90 GHz / 3.1 V (60 / 4.5)
-
npn SiGe HBT
pnp SiGe HBT
[2] D Knoll et al, BCTM, pp. 30-33, 2007
[1] B. Heinemann et al, IEDM, pp. 117-120, 2003
35 John D. Cressler, 5/09
ADC Migration
Major Stressor on
ADC Performance
36 John D. Cressler, 5/09
40 GS/s Track/Hold Amp
37 John D. Cressler, 5/09
Outline
Some Reminders on SiGe
Scaling Trends and Performance Limits
Using SiGe for Radar Systems
Using SiGe for High-speed Analog
Using SiGe in Extreme Environments
Summary
38 John D. Cressler, 5/09
Extreme Environments
Aerospace (aircraft, satellites ...)
Space Exploration (Moon, Mars ...)
Automotive (on-engine )
Drilling (oil, geothermal ...)
Exploration
Drilling
Cars
Aerospace
Extreme Environment Electronics:
low-T, high-T, wide-T, radiation, shock, chemical
39 John D. Cressler, 5/09
Moon Mars Outer
Planets
Space Exploration
All Represent Extreme Environments!
(Very Wide Temperature Swings + Radiation)
40 John D. Cressler, 5/09
Temperature Ranges:
+120C to -180C (300C swings!)
28 day cycles
Radiation:
100 krad over 10 years
single event upset (SEU)
solar events
Many Different Circuit Needs:
digital building blocks
analog building blocks
data conversion (ADC/DAC)
RF communications
power conditioning
actuation and control
switches
sensors / sensor interfaces
Requires Centralized Warm Box
Rovers / Robotics
The Moon:
A Classic Extreme Environment!
Highly Mixed-Signal Flavor!
41 John D. Cressler, 5/09
The Idea: Put Graded Ge Layer into the Base of a Si BJT
Primary Consequences:
smaller base bandgap increases electron injection ( )
field from graded base bandgap decreases base transit time (f
T
)
base bandgap grading produces higher Early voltage (V
A
)
All kT Factors Are Arranged to Help at Cryo-T!
SiGe HBTs for Cryo-T
42 John D. Cressler, 5/09
SiGe HBTs at Cryo-T
27C
-230C
dc ac
SiGe Exhibits Very High Speed
at Very Low Power!
First Generation SiGe HBT
43 John D. Cressler, 5/09
X-band LNA Operation at 15 K (Not Yet Optimized!)
T
eff
< 20 K (noise T)
NF < 0.3 dB
Gain > 20 dB
dc power < 2 mW
Cryogenic SiGe LNAs
Collaboration with S. Weinreb, Cal Tech
NF = 0.3 dB!
This SiGe LNA is Also Rad-Hard!
44 John D. Cressler, 5/09
SiGe at High-T? (200-300C)
Degradation, But Plenty of Performance Left!
Device Reliability Looks Fine
Just in: Robust Operation @ 300C for Selected Circuits
Gain Frequency
45 John D. Cressler, 5/09
The Holy Grail of the Space Community
- IC technology space-qualified without additional hardening (major cost adder)
- high integration levels to support SoC / SiP (low cost)
SiGe For Space Systems
proton + electron belts
Major Question:
Can SiGe Play a
Major Role in
Space?
Total Ionizing Dose (TID) ionizing radiation
- TID is measured in rads (1 rad = 100 ergs per gram of energy absorbed)
- 100-1000 krad(Si) over 10 years for typical orbit (300 rad(Si) is lethal to humans!)
Single Event Upset (SEU) high energy heavy ions
- measure data upset cross-section () vs. Linear Energy Transfer (LET)
- = # errors / particle fluence (ions/cm
2
): LET = charge deposition (pC/m)
- Goals: low cross-section + high LET threshold
46 John D. Cressler, 5/09
Total-Dose Response
Multi-Mrad Total Dose Hardness (with no intentional hardening!)
- ionization + displacement damage very minimal over T; no ELDRS!
Radiation Hardness Due to Epitaxial Base Structure (not Ge)
- thin emitter-base spacer + heavily doped extrinsic base + very thin base
63 MeV protons @ 5x10
13
p/cm
2
= 6.7 Mrad TID!
200 GHz
SiGe HBT
3
rd
2
nd
1
st
4
th
47 John D. Cressler, 5/09
Observed SEU Sensitivity in SiGe HBT Shift Registers
- low LET threshold + high saturated cross-section (bad news!)
P. Marshall et al., IEEE TNS, 47, p. 2669, 2000
Goal
Single Event Effects
heavy ion
48 John D. Cressler, 5/09
OUT
DATA
CLOCK
TCAD Ion Strike
Standard Master Slave Latch
UPSETS
SEU: TCAD to Circuits
New RHBD SiGe Latch
SEU Soft
49 John D. Cressler, 5/09
Reduce Tx-Tx Feedback Coupling Internal to the Latch
Circuit Architecture Changes + Transistor Layout Changes
SiGe RHBD Success!
Future - Eliminate TMR & Be Faster!
Path - Build a Rad-Hard System!
(no errors!)
50 John D. Cressler, 5/09
Remote Electronics Unit
5 x 3 x 6.75 = 101 in
3
11 kg
17 Watts
-55
o
C to +125
o
C
1.5 x 1.5 x 0.5 = 1.1 in
3
(100x)
< 1 kg (10x)
< 2 Watts (10x)
-180
o
C to +125
o
C, rad tolerant
Conceptual integrated REU
system-on-chip SiGe BiCMOS die
The X-33
Remote Health
Unit, circa 1998
The ETDP Remote
Electronics Unit, circa 2009
Specifications
Goals
Analog front
end die
Digital
control die
Supports Many Sensor Types:
Temperature, Strain, Pressure, Acceleration, Vibration, Heat Flux, Position, etc.
REU in
connector
housing!
Use This REU as a Remote Vehicle Health Monitoring Node
51 John D. Cressler, 5/09
Temperature Controlled
Environment
System
Processor
(RAD750 or
equivalent)
Solid State
Data Recorder
Extreme Ambient
Environment
Extreme Ambient
Environment
Communications
Accelerometer
(High sp)
Accelerometer
(ch amp)
Thermocouple
(Low sp)
Thermocouple
(Low sp)
Thermocouple
(Low sp)
Thermocouple
(Low sp)
Pressure
Transducer
(Low sp)
Pressure
Transducer
(Low sp)
REU
Digital
Control
ASIC
REU
Sensor
Interface
ASIC
Ctrl
Data
Sensor
Inputs
RS-
485
REU in Connector
Housing
Boot PROM
REU
Digital
Control
ASIC
REU
Sensor
Interface
ASIC
Ctrl
Data
Sensor
Inputs
RS-
485
REU in Connector
Housing
Boot PROM
REU
Digital
Control
ASIC
REU
Sensor
Interface
ASIC
Ctrl
Data
Sensor
Inputs
RS-
485
REU in Connector
Housing
Boot PROM
REU
Digital
Control
ASIC
REU
Sensor
Interface
ASIC
Ctrl
Data
Sensor
Inputs
RS-
485
REU in Connector
Housing
Boot PROM
REU
Sensor
Interface
ASIC
REU
Digital
Control
ASIC
Data
Ctrl
Sensor
Inputs
RS-
485
REU in Connector
Housing
Boot PROM
REU
Sensor
Interface
ASIC
REU
Digital
Control
ASIC
Data
Ctrl
Sensor
Inputs
RS-
485
REU in Connector
Housing
Boot PROM
REU
Sensor
Interface
ASIC
REU
Digital
Control
ASIC
Data
Ctrl
Sensor
Inputs
RS-
485
REU in Connector
Housing
Boot PROM
REU
Sensor
Interface
ASIC
REU
Digital
Control
ASIC
Data
Ctrl
Sensor
Inputs
RS-
485
REU in Connector
Housing
Boot PROM
Major Advantages:
Eliminates Warm Box (size, weight, and power; allows de-centralized architecture)
Significant Wiring Reduction (weight, reliability, simplifies testing & diagnostics)
Commonality (easily adapted from one system to the next)
SiGe REU Architecture
52 John D. Cressler, 5/09
MISSE-6 ISS Mission
Recent NASA photograph of MISSE-6 after deployment,
taken by the Space Shuttle Crew
SiGe Circuits !
53 John D. Cressler, 5/09
Summary
The Global Landscape:
The Emerging Communications Infrastructure
- frequency bands pushing upward over time (stresses device design)
- integration of RF + digital + analog + passives increasingly important
- SiGe HBT BiCMOS is well-positioned to address this market
SiGe Technology is Here to Stay!
SiGe HBT BiCMOS Technology:
The SiGe HBT is the First Practical Bandgap Engineered Device in Si
Compared to Si BJTs, SiGe HBTs Offer Better:
- + V
A
+ V
A
+ f
T
+ f
max
+ 1/f + NF
min
+
Compared to CMOS, SiGe HBTs Offer Better:
- f
T
/f
max
/NF at fixed scaling node + matching + g
m
/area + 1/f noise, +
Still Room for Lots of Performance Improvement (f
T
/ f
max
= 500 GHz)
Still Lots to Learn About the Physics of These Interesting Devices
MANY Interesting Application Possibilities and New Opportunities!
54 John D. Cressler, 5/09
My Gang at Georgia Tech