12EK08 / 13EK06 IGBT IN POWER ELECTRONIC CIRCUITS

1 0 0 1

Semiconductor Physics : Current Flow Conductivity Ionization - Thermal Equilibrium - Recombination of Charges - Carrier Life
Time - Saturation Current. (2)

Internal Structure and Characteristics : Multi cell structure of IGBT (Cross Section) - IGBT vs MOSFET (Drift Region) - Different
Types of IGBTs and its Cell Structures (NPT, TRENCH GATE, PUNCH THRO, NON PUNCH THRO) - VI characteristics - Circuit
Symbol.

Two Transistor Analogy of IGBT - Latch up Behavior of IGBTs - Internal Capacitances (Cies, Coes, Cres) - Turn ON Behaviour - Turn
OFF Behaviour - Lead Inductance and Gate Resistance - Safe Operating Area - Typical Datasheet Parameter Explanation. (3)

Selection for Inverter and Design Criteria : Module Ratings, fsw Determination - Gate Resistance - Conduction loss, Switching Loss
and Blocking Loss - Derations - Thermal design (Thermal Resistance, Junction to Case, Selection of Heat Sink, Cooling Methods,
Thermal Compound and its properties) (3)

Drivers and Protections: Gate Driver Selection and Design (gate Charge Curve, Gate Charge Measurement, Driver Output Power,
Gate Current, Peak Gate Current, Gate Driver IC Selection, Gate Resistance Selection, Market Available Gate Drivers)

Protection Schemes (Active Clamping, Active Miller Clamping, dv/dt Protection, IGBT Double Pulse Testing and Bus Bar Design
Considerations, RC Snubber Principles, Snubber Design-Turn ON, Turn OFF, Overshoot) (3)

Advanced Power Semiconductors : Trends on semiconductors in IGBT and semiconductor (SiC, GaNi , GaAs and Diamond) -
Intelligent Power Modules (Packages and Features) - Advantages of Emerging Technologies. (1)

LABORATORY COMPONENT: (3)

Simulation
Simulation (Device Level Manufacturer Modelling w.r.t Internal Parameters)
Simulation (System Level Inverter Working Model w.r.t Current, Voltage Waveform, and Behaviour)

Total : L:12 + P: 3 = 15
References:
1. B. W. William, Power Electronics: Devices, Drivers, Applications and Passive Components, McGraw-Hill, 1992.
2. Ned Mohan, Tore M. Undeland and William P. Robbins., "Power Electronics: Converters, Applications and Design", John Wiley
and Sons, 2003.
3. IGBTs Loss Calcuation Manual by Infineon.
4. Application Notes on IGBT Modules, by Fuji electric.
5. Application Notes on IGBT Modules, by Semikron.
6. IGBT driver calculations and Protections, by Semikron.
7. PSpice/Saber/Simplorer for Device Level Simulations.
8. Matlab/Saber/Simplorer/Simelectronic for System Level Simulations.
9. Presentations by SEMIKRON, INFENION, VINCOTECH, DANFOSS SILICON POWER.