avalanche transit-time devices

IMPact Avalanche and Transit Time IMPATT diode

TRApped Plasma Avalanche Triggered
Transit-TRAPATT diode Transit-TRAPATT diode
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IMPATT
IMPact ionization Avalanche Transit-Time
used in high-frequency and microwave
devices.
made with silicon carbide owing to their high
breakdown fields. breakdown fields.
operate at frequencies between about 3 and 100
GHz or more.
A main advantage is their high power capability.
.negative resistance for dc and ac
I-V 180
0
Used in low power radar systems to alarms
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An IMPATT diode is reverse biased above the
breakdown voltage.
The high doping levels produce a thin depletion
region. The resulting high electric field rapidly
accelerates carriers which free other carriers in
collisions with the crystal lattice.
Holes are swept into the P+ region. Electrons
drift toward the N regions. The cascading effect drift toward the N regions. The cascading effect
creates an avalanche current which increases
even as voltage across the junction decreases.
The pulses of current lag the voltage peak
across the junction. A negative resistance
effect in conjunction with a resonant circuit
produces oscillations at high power levels.
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The resonant circuit
is the lumped circuit
equivalent of a
waveguide section,
where the IMPATT where the IMPATT
diode is mounted.
Low power RADAR
transmitters may use
an IMPATT diode as
a power source. They
are too noisy for use
in the receiver
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High potential gradient-400KV/cm
High power 100MW/cm
3
Operating temperature-upto 250
0
C
Avalanche is not instantaneous
Drift velocity depend on electric field
Time taken by the pulse to reach the cathode Time taken by the pulse to reach the cathode
depend on velocity and thickness on highly
doped n+ layer.
The ac current is approxi 180 degree out of
phase with the applied voltage this gives rise to
negative conduction and oscillation is resonant
circuit.
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The two important term of Impatt Diode are below -
Negative Resistance : A combination of delay involved
ingenerating avalanche current multiplication together
with delay due to transit time through the drift space
provide necessary 180 degree between current and
voltage voltage
Impatt diode exhibits this kind of negative resistance.
Impatt Ionization: If a free electron with suficient kinetic
energy strikes a silicon atom, it can break a covalent
band and lebrated from the bond .If this kinetic energy is
gained from an applied electric field, the liberation of the
electron from the bond is term as Impatt ionization.
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typical Impatt diode.
The gold alloy contact is used as it has low ohmic and thermal
resistance.
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The original DC field is just at the threshold of
the allowing this situation but this threshold
voltage is exceed only during the positive half
cycle of A.C voltage .it is a cumulative process
and takes time. A 90 degree phase difference or
a delay has taken place.
The holes produced in the avalanche rapidly
reach the p+ contact taking no part in the
process but the electrons are released into n
region where they do not combine which either
donor or holes.
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The electron drift at their maximum velocity
across the n region and current continuous to
flow in the external circuit which they are in
transit.
When this current pulse actually arrives at the
cathode terminal, the A.C voltage is at its
negative peak and the second delay of 90
degree has taken place. This time depends
upon the velocity and the thickness of the highly
doped n+ layer.
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Practical consideration
S/C Si,Ge,GaAs,InP
Si-cheaper, easy to fabricate
GaAs-lower noise, high efficiencies, high
operating freq. operating freq.
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TRAPATT
A pn junction diode, similar to the IMPATT diode, but
characterized by the formation of a trapped space-charge plasma
within the junction region; used in the generation and amplification
of microwave power. Derived from trapped plasma avalanche transit
time diode.
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IMPATT diode mounted on coaxial cavity
a short circuit half wavelength away from
the diode oscillations begins.
RF field increases RF field increases
Plasma of electrons and holes is generated
due to avalanche action so that a large
potential across the junction which
opposes applied AC field.
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Total voltage is reduced
Current pulses trapped behind it.
Much slower drift velocity so longer transit time so
that for a given thickness operating frequency is much
lower lower
When current pulses does arrive at cathode, the
diode voltage is much lower than IMPATT diode,
dissipation is much lower, efficiency much higher.
Operation similar to class-c, pulsed operation than
CW operation
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n
+
-p-p
+
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Drift velocity of TRAPATT diode much less
than IMPATT diode , so
Either operating frequency must be lower
Or active region must be made thinner Or active region must be made thinner
<10GHz
TRAPATT pulse is rich in harmonics,
amplifiers or oscillators can be designed to
tune this frequencies.( X band)
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PAGE 6,7 D/TRAPATT
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Gunn diode-
Tunnel diode
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