Design of Ternary Adiabatic Domino Multiplier

Peng-Jun Wang*, Qian-Kun Yang, Xue-Song Zheng

Institute of Circuits and Systems, Ningo !ni"ersity, Ningo #$%&$$, China
' (mai)* +ang,eng-un.nu/edu/cn

Abstract
0y researching the adiaatic 1omino circuit and the
mu)ti,)ier, a no"e) design of )o+ ,o+er ternary
mu)ti,)ier on s+itch-)e"e) is ,ro,osed/ 2irst, the
s+itch-)e"e) structure of ternary mu)ti,)ier3s ,roduct
circuit and carry circuit are deri"ed according to the
s+itch-signa) theory and the ,ecu)iarity of adiaatic
1omino circuit/ 4he design of the one it adiaatic
1omino mu)ti,)ier unit and the four its mu)ti,)ier are
otained/ 2ina))y, the circuit is simu)ated y S,ice too)
and the resu)ts sho+ that the )ogic function of the four
its adiaatic 1omino mu)ti,)ier is correct/ 4he energy
consum,tion of the four its adiaatic 1omino mu)ti,)ier
is %56 )ess than the con"entiona) 1omino counter,art/
Key words: 4ernary adder7 8diaatic )ogic7 1omino
circuit7 S+itch-signa) theory
1. Introduction
9u)ti,)ier is the critica) com,onent of modern
digita) systems, eing +ide)y used in "arious
micro,rocessors/ 4he ,o+er consum,tion of mu)ti,)ier
has a great inf)uence on the tota) ,o+er consum,tion
:$;
/
So the research of )o+ ,o+er mu)ti,)ier is significant/
<o+e"er, the e)ectric charge of con"entiona) mu)ti,)ier
is one-off consumed from ,o+er source to the ground
causing "ast energy +aste/ 4he adiaatic mu)ti,)ier
ado,ted 8C ,u)se ,o+er su,,)y can reduce the ,o+er
consum,tion due to reco"ering the e)ectric charge
storing in the interna) nodes of circuits/
8t ,resent, the digita) circuit and system are
rea)i=ed y 0oo)ean )ogic/ 4he time and s,ace use ratio
of the circuits are re)ati"e)y )o+/ 4he mu)ti-"a)ued )ogic
can reduce the numer of "aria)es, im,ro"e the amount
of information in one +ire, thus decrease the area of the
chi,, enhance the data-hand)ing ca,acity
:&,#;
/ 1omino
circuits are +ide)y used in high-,erformance circuits due
to its su,eriority in area and s,eed
:>;
/ Comining
mu)ti-"a)ued )ogic and 1omino circuits, +e can further)y
decrease the area of the circuits and im,ro"e the
information density/ 2or this, +e design the ternary
adiaatic 1omino mu)ti,)ier according to the
s+itch-signa) theory
:%;
/ 4his mu)ti,)ier has sim,)e
construction and o"ious )o+ ,o+er characteristics/ 4he
numer of transistor of one it ternary adiaatic 1omino
mu)ti,)ier is #$6 )ess than the 14C4?8@
:$;
counter,art/
4he energy consum,tion of four its adiaatic 1omino
mu)ti,)ier is %56 )ess than the con"entiona) counter,art/
2. Design of Ternary Adiabatic Domino Multiplier
2.1 One it Ternary Adiabatic Domino Multiplier
4he truth ta)e of ternary mu)ti,)ier is sho+n in
ta)e $/ A and B are the in,ut signa)s, C
in
is the carry
signa) from )o+-order, P is the ,roduct signa), C
out
is the
carry signa) to high-order/
4a)e $/ 4he truth ta)e of ternary mu)ti,)ier

4he signa)
A
A
A
,
$
A
$
,
&
A
&
,
A
B
A
,
$
B
$
,
&
B
&
are the out,uts
of ternary adiaatic 1omino )itera) o,eration circuit
:%;

+hen the in,uts are A and B res,ecti"e)y/ 4he am,)itude
"o)tage of clk and clk are )ogic &, the am,)itude
"o)tage of $ clk is )ogic $/ clk and $ clk are in-,hase,
clk is anti-,hase +ith efore oth/ 8ccording to
s+itch-signa) theory and the truth ta)e of ternary
mu)ti,)ier, the structure eB,ressions of the ternary
mu)ti,)ier ,roduct circuit cou)d e deri"ed/ 4he ,roduct
signa) eBist three )ogic "a)ues* A, $, &/ So different
contro) circuits are needed to generate )ogic $ and )ogic &
signa)/ Su,,ose that Y
$
and Y
&
are the contro) signa)s of
)ogic $ and )ogic & signa)s, their structure eB,ressions as
fo))o+s*
$ $
% / $
$ $
% / $
in
% / $ % / $ % / A
$
C : D B A C clk clk clk clk Y =
E; D C ED D
A A
% / $
A A
% / $
in
% / $ & &
% / $
& &
% / $
B A C B A C$E
& &
% / $
$ $
% / $
in
% / $ % / $ % / A
&
C : D B A C clk clk clk clk Y =
E; D C ED D
& &
% / $
& &
% / $
$ $
% / $
$ $
% / $
% / $ $ $
% / $
& &
% / $
B A B A C B A
in

C&E
In the (F C$E,
% / A
clk clk indicates that* +hen the
clk is )o+ "o)tage, the dynamic node Y
$
is charged y
clk, the neBt term indicates that* +hen the clk is high
"o)tage, the e)ectric charge stored in dynamic node Y
$
is
reco"ered to clk if ABGC
in
H$/ 4he circuit (F C&E
eB,ressing is simi)ar to this/ 4he structure of contro)
circuits Y
$
and Y
&
can e otained y (Fs C$E-C&E,as
sho+n in 2igure $/
978-1-4673-2475-5/12/$31.00 2012 IEEE

CaE Contro) circuit Y
$


CE Contro) circuit Y
&

2igure $/ Contro) circuits Y
$
and Y
&

4he ,roduct signa) P can e otained y using
contro) circuits Y
$
and Y
&
to generate )ogic $ and )ogic &
signa)s/ 4he structure eB,ressions of ,roduct signa) P as
fo))o+s*
clk clk Y clk Y clk P
% / $ % / $
&
% / $
$ $
D D = C#E

2igure &/ Product signa) generating circuit
In the (F C#E,
% / $
&
% / $
$ $
D Y clk Y clk indicates that*
+hen the Y
$
is )o+ "o)tage, the ,roduct signa) P eB,orts
)ogic $, ecause of the am,)itude "o)tage of $ clk is
)ogic $/ When the Y
&
is )o+ "o)tage, the ,roduct signa) P
eB,orts )ogic &, ecause of the am,)itude "o)tage of clk
is )ogic &/ clk clk
% / $
indicates that* +hen clk is high
"o)tage, the e)ectric charge stored in node P is reco"ered
to clk , the ,roduct signa) P eB,orts )ogic A/ 4he circuit
structure (F C#E eB,ressing is sho+n as 2igure &/ 8nd
the +ho)e ,roduct circuit can e consisted of the circuits
sho+n in 2igure $ and 2igure &/ Its circuit symo) and
c)ocIing +a"eform are sho+n in 2igure #/

2igure #/ Product circuit symo) and c)ocIing +a"eform
Simi)ar)y so, the carry circuit can e otained/ Its
circuit, symo) and c)ocIing +a"eform are sho+n in
2igure >/

CaE Circuit

CE Symo) and c)ocIing +a"eform
2igure >/ Carry circuit
Jne it ternary adiaatic 1omino mu)ti,)ier is
com,osed of ternary adiaatic 1omino )itera) o,eration
circuit, ,roduct circuit and carry circuit/ Its circuit
structure, symo) and c)ocIing +a"eform are sho+n in
2igure %/

CaE Circuit structure

CE Symo) and c)ocIing +a"eform
2igure %/ Jne it ternary adiaatic 1omino mu)ti,)ier

2igure K/ 2our its ternary adiaatic 1omino mu)ti,)ier

2.2 !our its Ternary Adiabatic Domino Multiplier
Connecting the C
out
and
out
C +ith the C
in
and
in
C of neBt it, the four its ternary adiaatic 1omino
mu)ti,)ier is otained/ Its circuit structure is sho+n in
2igure K/
". #imulation
4he four its ternary adiaatic 1omino mu)ti,)ier
mentioned ao"e is simu)ated using the ,arameters of
4S9C A/&%Lm C9JS de"ice y S,ice too), the
+a"eform is sho+n in 2igure M/ 4he am,)itude of
clk
$
, $ clk ,clk, clk are $/&%N, $/&%N, &/%N, &/%N/ 4he
freFuency of a)) c)ocIs is &A 9<=/ 4he readth )ength
ratio for N9JS transistor is A/#KLmOA/&>Lm, for P9JS
transistor is A/M&LmOA/&>Lm/ 4he )oad ca,acitance is $A
f2/ A
#
A
&
A
$
A
A
and B
#
B
&
B
$
B
A
are the in,ut signa)s/
P
#
P
&
P
$
P
A
are out,ut signa)s/ C
out
is carry signa)/ 2igure M
sho+s that the )ogica) function of the circuits is
consistent +ith the ternary mu)ti,)ier truth ta)e/
4imeOns
Ans $AAns &AAns #AAns >AAns %AAns KAAns MAAns
NCC$E
NCP$E
NCB$E
NCA$E
NCCAE
NCPAE
NCBAE
NCAAE
AN
AN
#N
AN
#N
AN
#N
AN
#N
AN
#N
AN
#N
AN
#N
#N


2igure M/ Simu)ation +a"eforms of four its ternary
adiaatic 1omino mu)ti,)ier
Com,ared the four its ternary adiaatic 1omino
mu)ti,)ier energy consum,tion +ith the con"entiona)
1omino counter,art in the same ,arameters, the resu)t is
sho+n in 2igure 5/ 8na)ytica))y, the four its ternary
adiaatic 1omino mu)ti,)ier can sa"e energy
consum,tion aout %56, sho+ing eBce))ent )o+-,o+er
characteristics/ 9oreo"er, the numer of transistor of
one it ternary adiaatic 1omino mu)ti,)ier is #$6 )ess
than the 14C4?8@

counter,art, reducing circuit cost/

2igure 5/ (nergy consum,tion com,arison
$. #ummary
8ccording to the s+itch-signa) theory, a no"e)
design of )o+ ,o+er ternary 1omino mu)ti,)ier on
s+itch-)e"e) is ,ro,osed/ 4he scheme ado,ts adiaatic
1omino circuits, rea)i=ing energy recyc)ing and reducing
energy consum,tion/ 9oreo"er, the circuit has a sim,)e
construction/ 9ore its mu)ti,)ier cou)d e achie"ed
using this scheme, ,romoting the ,racticai)ity of ternary
digita) system/
Ac%nowledgments
4his +orI +as su,,orted y the Nationa) Natura)
Science 2oundation of China CNo/K$AMKA#&E, the Key
Pro-ect of Zhe-iang Pro"incia) Natura) Science
2oundation of China CNo/Z$$$$&$PE/
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:$; Peng-un Wang, Kun,eng @i and 2engna 9ei, Journa)
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:&; Sheng @in, Yong-0in Kim and @omardi 2, I(((
4ransactions on Nanotechno)ogy, &, ,/&$M C&A$$E/
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Circuits, 1e"ices Q Systems, >, ,/&5% C&A$$E/
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Circuits and Systems II* (B,ress 0riefs, &, ,/$>$
C&AA5E/
:%; QianIun Yang, Peng-un Wang and Xuesong Zheng,
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