AO4411

30V P-Channel MOSFET

General Description Product Summary
V
DS
I
D
(at V
GS
=-10V) -8A
R
DS(ON)
(at V
GS
=-10V) < 32m
R
DS(ON)
(at V
GS
= -4.5V) < 55m
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
Drain-Source Voltage -30
The AO4411 uses advanced trench technology to provide
excellent R
DS(ON)
, and ultra-low low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
V
Maximum Units Parameter
Absolute Maximum Ratings T
A
=25C unless otherwise noted
-30V
G
D
S
SOIC-8
Top View Bottom View
D
D
D
D
S
S
S
G
V
DS
V
GS
I
DM
I
AS
, I
AR
E
AS
, E
AR
T
J
, T
STG
Symbol
t 10s
Steady-State
Steady-State R
JL
2 T
A
=70C
Junction and Storage Temperature Range -55 to 150 C
Thermal Characteristics
W
3.1
Units Parameter Typ Max
C/W
R
JA
31
59
40 Maximum Junction-to-Ambient
A
V 20 Gate-Source Voltage
Drain-Source Voltage -30 V
mJ
Avalanche Current
C
26
A 23
A
I
D
-8
-6.6
-40
T
A
=25C
T
A
=70C
Power Dissipation
B
P
D
Avalanche energy L=0.1mH
C
Pulsed Drain Current
C
Continuous Drain
Current
T
A
=25C
Maximum Junction-to-Lead C/W
C/W Maximum Junction-to-Ambient
A D
16
75
24
G
D
S
SOIC-8
Top View Bottom View
D
D
D
D
S
S
S
G
Rev 11: Nov 2011 www.aosmd.com Page 1 of 6

AO4411
Symbol Min Typ Max Units
BV
DSS
-30 V
V
DS
=-30V, V
GS
=0V -1
T
J
=55C -5
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage -1.3 -1.85 -2.4 V
I
D(ON)
-40 A
21 32
T
J
=125C 31.5 38
33 55 m
g
FS
19 S
V
SD
-0.8 -1 V
I
S
-3.5 A
C
iss
760 pF
C
oss
140 pF
C
rss
95 pF
R
g
1.5 3.2 5
Q
g
(10V) 13.6 16 nC
Q
g
(4.5V) 6.7 8 nC
Q
gs
2.5 nC
Q
gd
3.2 nC
t
D(on)
8 ns
t 6 ns
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time V =-10V, V =-15V, R =1.8,
Total Gate Charge
V
GS
=-10V, V
DS
=-15V, I
D
=-8A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-8A
V
GS
=-4.5V, I
D
=-5A
Forward Transconductance
Diode Forward Voltage
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
A
V
DS
=V
GS
I
D
=-250A
V
DS
=0V, V
GS
= 20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
m
On state drain current
I
D
=-250A, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-8A
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=-15V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Drain-Source Breakdown Voltage
t
r
6 ns
t
D(off)
17 ns
t
f
5 ns
t
rr 15 ns
Q
rr 9.7
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
I
F
=-8A, dI/dt=100A/s
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=1.8,
R
GEN
=3
Turn-Off Fall Time
I
F
=-8A, dI/dt=100A/s
Body Diode Reverse Recovery Time
A. The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25C.
D. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150C. The SOA curve provides a single pulse rating.
Rev 11: Nov 2011 www.aosmd.com Page 2 of 6

AO4411
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
5
10
15
20
25
30
1 1.5 2 2.5 3 3.5 4 4.5 5
-
I
D
(
A
)
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
10
15
20
25
30
35
40
45
50
0 5 10 15 20
R
D
S
(
O
N
)
(
m

)
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
N
o
r
m
a
l
i
z
e
d

O
n
-
R
e
s
i
s
t
a
n
c
e
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
V
GS
=-4.5V
I
D
=-5A
V
GS
=-10V
I
D
=-8A
25C 125C
V
DS
=-5V
V
GS
=-4.5V
V
GS
=-10V
0
5
10
15
20
25
30
35
40
0 1 2 3 4 5
-
I
D
(
A
)
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=-3V
-3.5V
-6V -5V -10V -4.5V
-4V
40
0
5
10
15
20
25
30
1 1.5 2 2.5 3 3.5 4 4.5 5
-
I
D
(
A
)
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
10
15
20
25
30
35
40
45
50
0 5 10 15 20
R
D
S
(
O
N
)
(
m

)
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-
I
S
(
A
)
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
N
o
r
m
a
l
i
z
e
d

O
n
-
R
e
s
i
s
t
a
n
c
e
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
V
GS
=-4.5V
I
D
=-5A
V
GS
=-10V
I
D
=-8A
0
20
40
60
80
2 4 6 8 10
R
D
S
(
O
N
)
(
m

)
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25C 125C
V
DS
=-5V
V
GS
=-4.5V
V
GS
=-10V
I
D
=-8A
25C
125C
0
5
10
15
20
25
30
35
40
0 1 2 3 4 5
-
I
D
(
A
)
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=-3V
-3.5V
-6V -5V -10V -4.5V
-4V
Rev 11: Nov 2011 www.aosmd.com Page 3 of 6

AO4411
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 2 4 6 8 10 12 14
-
V
G
S
(
V
o
l
t
s
)
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
0 5 10 15 20 25 30
C
a
p
a
c
i
t
a
n
c
e

(
p
F
)
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
C
oss
C
rss
V
DS
=-15V
I
D
=-8A
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
-
I
D
(
A
m
p
s
)
-V
DS
(Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10s
10s
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
100s
10ms
10.0
100.0
1 10 100 1000
-
I
A
R

(
A
)

P
e
a
k

A
v
a
l
a
n
c
h
e

C
u
r
r
e
n
t

Time in avalanche, t
A
( s)
Figure 9: Single Pulse Avalanche capability (Note C)
T
A
=25C
T
A
=150C
T
A
=100C
T
A
=125C
0
2
4
6
8
10
0 2 4 6 8 10 12 14
-
V
G
S
(
V
o
l
t
s
)
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
0 5 10 15 20 25 30
C
a
p
a
c
i
t
a
n
c
e

(
p
F
)
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
C
oss
C
rss
V
DS
=-15V
I
D
=-8A
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
P
o
w
e
r

(
W
)
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
T
A
=25C
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
-
I
D
(
A
m
p
s
)
-V
DS
(Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10s
10s
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
100s
10ms
10.0
100.0
1 10 100 1000
-
I
A
R

(
A
)

P
e
a
k

A
v
a
l
a
n
c
h
e

C
u
r
r
e
n
t

Time in avalanche, t
A
( s)
Figure 9: Single Pulse Avalanche capability (Note C)
T
A
=25C
T
A
=150C
T
A
=100C
T
A
=125C
Rev 11: Nov 2011 www.aosmd.com Page 4 of 6

AO4411
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Z

J
A
N
o
r
m
a
l
i
z
e
d

T
r
a
n
s
i
e
n
t

T
h
e
r
m
a
l

R
e
s
i
s
t
a
n
c
e
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
JA
=75C/W
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Z

J
A
N
o
r
m
a
l
i
z
e
d

T
r
a
n
s
i
e
n
t

T
h
e
r
m
a
l

R
e
s
i
s
t
a
n
c
e
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
JA
=75C/W
Rev 11: Nov 2011 www.aosmd.com Page 5 of 6

AO4411
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Vdd
Vgs
Id
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
L
-
2
E = 1/2 LI
AR
AR
BV
DSS
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
t t
t
90%
10%
r
on
d(off)
f
off
d(on)
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Vdd
Vgs
Id
Vgs
Rg
DUT
VDC
Vgs
Vds
Id
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
L
-
+
2
E = 1/2 LI
AR
AR
BV
DSS
I
AR
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
-Isd
-Vds
F -I
-I
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
t t
t
90%
10%
r
on
d(off)
f
off
d(on)
Rev 11: Nov 2011 www.aosmd.com Page 6 of 6