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HEF4052B: 1. General Description
HEF4052B: 1. General Description
HEF4052B: 1. General Description
1. General description
The HEF4052B is a dual 4-channel analog multiplexer/demultiplexer with common
channel select logic. Each multiplexer/demultiplexer has four independent inputs/outputs
(nY0 to nY3) and a common input/output (nZ). The common channel select logic includes
two select inputs (S1 and S2) and an active LOW enable input (E). Both
multiplexers/demultiplexers contain four bidirectional analog switches, each with one side
connected to an independent input/output (nY0 to nY3) and the other side connected to a
common input/output (nZ). With E LOW, one of the four switches is selected
(low-impedance ON-state) by S1 and S2. With E HIGH, all switches are in the
high-impedance OFF-state, independent of S1 and S2. If break before make is needed,
then it is necessary to use the enable input.
VDD and VSS are the supply voltage connections for the digital control inputs (S1 and S2,
and E). The VDD to VSS range is 3 V to 15 V. The analog inputs/outputs (nY0 to nY3, and
nZ) can swing between VDD as a positive limit and VEE as a negative limit. VDD VEE may
not exceed 15 V. Unused inputs must be connected to VDD, VSS, or another input. For
operation as a digital multiplexer/demultiplexer, VEE is connected to VSS (typically
ground). VEE and VSS are the supply voltage connections for the switches.
3. Applications
Analog multiplexing and demultiplexing
Digital multiplexing and demultiplexing
Signal gating
HEF4052B
NXP Semiconductors
4. Ordering information
Table 1.
Ordering information
All types operate from 40 C to +125 C.
Type number
Package
Name
Description
Version
HEF4052BP
DIP16
SOT38-4
HEF4052BT
SO16
SOT109-1
HEF4052BTT
TSSOP16
plastic thin shrink small outline package; 16 leads; body width 4.4 mm
SOT403-1
5. Functional diagram
VDD
16
13
12
14
15
S1
10
11
S2
LOGIC
LEVEL
CONVERSION
1 - OF - 4
DECODER
1Z
1Y0
1Y1
1Y2
1Y3
2Y0
2Y1
6
2
4
3
8
VSS
VEE
2Y2
2Y3
2Z
mnb042
Fig 1.
Functional diagram
HEF4052B
2 of 22
HEF4052B
NXP Semiconductors
nYn
VDD
VDD
nZ
VEE
001aak604
Fig 2.
10
9
13
6
0
1
0
3
G4
1Z
1Y0
12
10
S1
1Y1
14
S2
1Y2
15
1Y3
11
2Y0
2Y1
2Y2
2Y3
MDX
3
0
1
Fig 3.
Logic symbol
HEF4052B
5
2
4
12
14
13
15
2Z
3
11
001aak605
mnb041
Fig 4.
3 of 22
HEF4052B
NXP Semiconductors
1Z
1Y0
S1
LEVEL
CONVERTER
1Y1
S2
LEVEL
CONVERTER
1Y2
LEVEL
CONVERTER
1Y3
2Y0
2Y1
2Y2
2Y3
2Z
001aak634
Fig 5.
Logic diagram
HEF4052B
4 of 22
HEF4052B
NXP Semiconductors
6. Pinning information
6.1 Pinning
HEF4052B
2Y0
16 VDD
2Y2
15 1Y2
2Z
14 1Y1
HEF4052B
2Y3
13 1Z
2Y1
12 1Y0
E
VEE
VSS
11 1Y3
10 S1
9
S2
2Y0
2Y2
16 VDD
15 1Y2
2Z
14 1Y1
2Y3
13 1Z
2Y1
12 1Y0
11 1Y3
VEE
10 S1
VSS
9
001aak606
001aag215
Fig 6.
S2
Fig 7.
Pin description
Symbol
Pin
Description
VEE
supply voltage
VSS
S1, S2
10, 9
select input
1Y0, 1Y1, 1Y2, 1Y3, 2Y0, 2Y1, 2Y2, 2Y3 12, 14, 15, 11, 1, 5, 2, 4
1Z, 2Z
13, 3
VDD
16
supply voltage
HEF4052B
5 of 22
HEF4052B
NXP Semiconductors
7. Functional description
7.1 Function table
Table 3.
Function table[1]
Input
Channel on
S2
S1
nY0 to nZ
nY1 to nZ
nY2 to nZ
nY3 to nZ
switches off
[1]
8. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to VSS = 0 V (ground).
Symbol
Parameter
VDD
supply voltage
Conditions
[1]
Min
Max
Unit
0.5
+18
18
+0.5
10
mA
VEE
supply voltage
referenced to VDD
IIK
pins Sn and E;
VI < 0.5 V or VI > VDD + 0.5 V
VI
input voltage
0.5
VDD + 0.5
II/O
input/output current
10
mA
IDD
supply current
50
mA
Tstg
storage temperature
65
+150
Tamb
ambient temperature
40
+125
Ptot
P
[1]
[2]
power dissipation
Tamb = 40 C to +125 C
[2]
DIP16 package
750
mW
SO16 package
500
mW
TSSOP16 package
500
mW
100
mW
per output
To avoid drawing VDD current out of terminal Z, when switch current flows into terminals Y, the voltage drop across the bidirectional
switch must not exceed 0.4 V. If the switch current flows into terminal Z, no VDD current will flow out of terminals Y, and in this case there
is no limit for the voltage drop across the switch, but the voltages at Y and Z may not exceed VDD or VEE.
For DIP16 package: Ptot derates linearly with 12 mW/K above 70 C.
For SO16 package: Ptot derates linearly with 8 mW/K above 70 C.
For SSOP16 package: Ptot derates linearly with 5.5 mW/K above 60 C.
HEF4052B
6 of 22
HEF4052B
NXP Semiconductors
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
supply voltage
see Figure 8
15
VI
input voltage
VDD
Tamb
ambient temperature
in free air
40
+125
t/V
VDD = 5 V
3.75
s/V
VDD = 10 V
0.5
s/V
VDD = 15 V
0.08
s/V
001aac285
15
VDD VSS
(V)
10
operating area
0
0
Fig 8.
10
15
VIL
II
HIGH-level
input voltage
LOW-level
input voltage
input leakage
current
HEF4052B
Tamb = 40 C Tamb = 25 C
Conditions
VDD
Min
Max
Min
Max
Min
Max
Min
Max
IO < 1 A
5V
3.5
3.5
3.5
3.5
10 V
7.0
7.0
7.0
7.0
15 V
11.0
11.0
11.0
11.0
IO < 1 A
5V
1.5
1.5
1.5
1.5
10 V
3.0
3.0
3.0
3.0
15 V
4.0
4.0
4.0
4.0
15 V
0.1
0.1
1.0
1.0
7 of 22
HEF4052B
NXP Semiconductors
Table 6.
Static characteristics continued
VSS = VEE = 0 V; VI = VSS or VDD unless otherwise specified.
Symbol Parameter
IS(OFF)
OFF-state
leakage
current
Conditions
CI
Max
Min
Max
Min
Max
Min
Max
Z port;
15 V
all channels OFF;
see Figure 9
1000
nA
15 V
200
nA
5V
150
150
10 V
10
10
300
300
15 V
20
20
600
600
7.5
pF
supply current IO = 0 A
input
capacitance
Min
Y port;
per channel;
see Figure 10
IDD
Tamb = 40 C Tamb = 25 C
VDD
Sn, E inputs
VDD or VSS
nYn
nZ
E
IS
VSS = VEE
VDD
VI
VO
001aak635
Fig 9.
VDD
VDD or VSS
S1 and S2
nY0
nZ
nYn
switch
IS
E
VSS = VEE
VSS
VO
VI
001aak636
Fig 10. Test circuit for measuring OFF-state leakage current nYn port
HEF4052B
8 of 22
HEF4052B
NXP Semiconductors
10.2 On resistance
Table 7.
ON resistance
Tamb = 25 C; ISW = 200 A; VSS = VEE = 0 V.
Symbol
Parameter
Conditions
VDD VEE
Typ
Max
Unit
RON(peak)
ON resistance (peak)
VI = 0 V to VDD VEE;
see Figure 11 and Figure 12
5V
350
2500
10 V
80
245
15 V
60
175
5V
115
340
10 V
50
160
15 V
40
115
5V
120
365
10 V
65
200
15 V
50
155
RON(rail)
ON resistance (rail)
VI = VDD VEE;
see Figure 11 and Figure 12
RON
ON resistance mismatch
between channels
5V
25
10 V
10
15 V
V
VSW
VDD
VDD or VSS
S1 and S2
nYn
nZ
E
VSS = VEE
VSS
ISW
VI
001aak637
HEF4052B
9 of 22
HEF4052B
NXP Semiconductors
DDH
521
9'' 9
9
9
9,9
Parameter
tPHL
Conditions
tPLH
tPHZ
tPZH
tPLZ
HIGH to OFF-state
propagation delay
OFF-state to HIGH
propagation delay
LOW to OFF-state
propagation delay
HEF4052B
VDD
Typ
Max
Unit
5V
10
20
ns
10 V
10
ns
15 V
10
ns
5V
150
305
ns
10 V
65
135
ns
15 V
50
100
ns
5V
10
20
ns
10 V
10
ns
15 V
10
ns
5V
150
300
ns
10 V
75
150
ns
15 V
50
100
ns
5V
95
190
ns
10 V
90
180
ns
15 V
85
180
ns
5V
130
260
ns
10 V
55
115
ns
15 V
45
85
ns
5V
100
205
ns
10 V
90
180
ns
15 V
90
180
ns
10 of 22
HEF4052B
NXP Semiconductors
Table 8.
Dynamic characteristics continued
Tamb = 25 C; VSS = VEE = 0 V; for test circuit see Figure 16.
Symbol
Parameter
Conditions
VDD
Typ
Max
Unit
tPZL
OFF-state to LOW
propagation delay
5V
120
240
ns
10 V
50
100
ns
15 V
35
75
ns
nYn or nZ
input
VM
VDD
Sn input
VEE
tPLH
tPLH
VO
nZ or nYn
output
VM
VSS
tPHL
tPHL
VO
90 %
nYn or nZ
output
VM
10 %
VEE
VEE
switch OFF
switch ON
001aac290
switch OFF
001aac291
VDD
E input
VM
VSS
tPLZ
nYn or nZ output
LOW-to-OFF
OFF-to-LOW
tPZL
VO
90 %
10 %
VEE
tPHZ
VO
tPZH
90 %
nYn or nZ output
HIGH-to-OFF
OFF-to-HIGH
10 %
VEE
switch ON
switch OFF
switch ON
001aac292
Measurement points
Supply voltage
Input
Output
VDD
VM
VM
5 V to 15 V
0.5VDD
0.5VDD
HEF4052B
11 of 22
HEF4052B
NXP Semiconductors
tW
VI
negative
pulse
0V
90 %
VM
10 %
tf
tr
tr
tf
VI
positive
pulse
0V
VM
10 %
90 %
VM
VM
tW
VDD
VDD VI
PULSE
GENERATOR
VI
VO
RL
S1
open
DUT
RT
CL
VSS
VEE
001aaj903
Test data
Input
nYn, nZ
Load
Sn and E
tr, tf
S1 position
VM
CL
RL
tPHL[1]
0.5VDD
50 pF
10 k
tPLH
VDD
VEE
For nYn to nZ propagation delays use VEE. For Sn to nYn or nZ propagation delays use VDD.
HEF4052B
12 of 22
HEF4052B
NXP Semiconductors
Parameter
Conditions
3 dB frequency response
f(3dB)
VDD
Typ
Max
Unit
[1]
0.25
[1]
0.04
[1]
0.04
5V
[1]
13
MHz
10 V
[1]
40
MHz
70
50
15 V
[1]
iso
isolation (OFF-state)
10 V
[1]
Vct
crosstalk voltage
10 V
Xtalk
crosstalk
10 V
[1]
50
[1]
MHz
-
dB
mV
50
dB
Parameter
dynamic power
dissipation
VDD
5V
where:
10 V
15 V
VDD or VSS
VDD
S1 and S2
VDD or VSS
nYn
nZ
S1 and S2
E
VSS = VEE
VSS
RL
CL
RL
CL
dB
fi
001aak638
VSS = VEE
VSS
fi
HEF4052B
nYn
nZ
001aak639
13 of 22
HEF4052B
NXP Semiconductors
VDD
VDD or VSS
S1 and S2
nY0
nZ
nYn
switch
E
VSS = VEE
VSS
RL
CL
dB
fi
001aak657
9''
9''
5/
9''
6DQG6
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a. Test circuit
ORJLF
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RQ
RII
92
9FW
DDM
HEF4052B
14 of 22
HEF4052B
NXP Semiconductors
VDD
VDD
VDD or VSS
S1 and S2
nY0
nZ
nYn
VDD or VSS
S1 and S2
nY0
nZ
nYn
E
E
VSS = VEE
VSS
RL
VO
RL
VSS = VEE
VSS
VI
RL
VI
VO
001aak659
RL
001aak660
HEF4052B
15 of 22
HEF4052B
NXP Semiconductors
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HEF4052B
NXP Semiconductors
13. Abbreviations
Table 13.
Abbreviations
Acronym
Description
DUT
Revision history
Document ID
Release date
Change notice
Supersedes
HEF4052B v.9
20140911
HEF4052B v.8
HEF4052B v.7
Modifications:
HEF4052B v.8
Modifications:
20111117
HEF4052B v.7
20100326
HEF4052B v.6
HEF4052B v.6
20100308
HEF4052B v.5
HEF4052B v.5
20091127
HEF4052B v.4
HEF4052B v.4
20090924
HEF4052B_CNV v.3
HEF4052B_CNV v.3
19950101
Product specification
HEF4052B_CNV v.2
HEF4052B_CNV v.2
19950101
Product specification
HEF4052B
19 of 22
HEF4052B
NXP Semiconductors
Product status[3]
Definition
Development
This document contains data from the objective specification for product development.
Qualification
Production
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
15.2 Definitions
Draft The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
HEF4052B
20 of 22
HEF4052B
NXP Semiconductors
15.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
HEF4052B
21 of 22
HEF4052B
NXP Semiconductors
17. Contents
1
2
3
4
5
6
6.1
6.2
7
7.1
8
9
10
10.1
10.2
10.2.1
11
11.1
11.2
11.2.1
12
13
14
15
15.1
15.2
15.3
15.4
16
17
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 5
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5
Functional description . . . . . . . . . . . . . . . . . . . 6
Function table . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Recommended operating conditions. . . . . . . . 7
Static characteristics. . . . . . . . . . . . . . . . . . . . . 7
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
On resistance . . . . . . . . . . . . . . . . . . . . . . . . . . 9
On resistance waveform and test circuit. . . . . . 9
Dynamic characteristics . . . . . . . . . . . . . . . . . 10
Waveforms and test circuit . . . . . . . . . . . . . . . 11
Additional dynamic parameters . . . . . . . . . . . 13
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 19
Legal information. . . . . . . . . . . . . . . . . . . . . . . 20
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 20
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Contact information. . . . . . . . . . . . . . . . . . . . . 21
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
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