In MOSFET Reduce Punch through effect

VIVEK MODI
RE2407A10. ECE 563 SOLID STATE DEVICES.
Department of Electronics & Communication Engineering.
Lovely Professional University, Phagwara, Punjab.
vivekmodi1991@gmail.com
Abstract -- As the demand grow for the very High Performance and high density integrated circuit, MOSFET scaling to
submicron regimes will continue to be at the core of the device and circuit design. While the circuit dimensions are
reduced, circuit requirements demand maintaining long channel behavior and minimizing the short channel as well as
parasitic effects or also punch through effects. At the same time, higher current drivability requires thinner gate oxides in
shorter channel length devices. The effect of scaling on initial device characteristics, the limit imposed by reliability
concern in scale down MOSFET technologies, techniques to control short channel effects and unconventional approach to
MOSFET scaling.
Index term--- introduction, mobility degradation, punch through, conclusion, reference.

I. Introduction:
According to Moores law, The prediction that the number of transistors that can be placed on an affordable
integrated circuit will double during a specific time period, usually said to be every 18 months or every 2 years.
It means device miniaturization due to this phenomena. But size should be small then scaling also should be small.
There are tremendous advantages of the device miniaturization in terms of the application purpose.
Due to the device miniaturization, the some problems are occupy the place. This kind of problem can not be remove
but can be minimized under the certain condition. An MOS transistor is considered short when the effective channel
length Leff is comparable to the source/drain junction depletion width. In this case, the potential distribution in the
channel depends on both the normal and the lateral electric field in the device. Experimentally, the short-channel
effect is observed to degrade the subthreshold characteristics and to reduce the threshold voltage VT with decreasing
Leff and increasing drain voltage VD. When Leff is further reduced, the drain current finally cannot be turned off and
the gate has no control over the charge. So-called Punch through effect poses a severe problem for miniaturized
devices.
II. MOBILITY DEGRADATION:
Mobility is important because current in MOSFET depends upon mobility of Charge carriers. (Holes or Electrons).
(1) Lateral field effect:
In case of short channels, as the lateral field is increased, the channel mobility become field dependent and
eventually velocity saturation occurs. This result in current saturations.
(2) Vertical field effect:
As the vertical electric field also increases on shrinking the channel length, it results in scattering of carrier near the
surface. Hence the surface mobility reduces.

III. PUNCH THROUGH:

Punch through in a MOSFET is an extreme case of channel length modulation where the depletion layers around the
drain and source regions merge into a single depletion region.
If small channel length MOSFETs are scaled properly, and the source/drain junctions are too deep or channel doping
is too low, there can be unintended electrostatic interactions between the source and drain known as Drain induced
barrier lowering (DIBL). This leads to punch through leakage or breakdown between the source and drain, and loss
the gate control. The actual amount of punch through current depends mainly on the potential distribution under the
channel. If the depletion area around the drain well extends too far to the source side, the potential barrier between
source and drain will be lowered and carriers will start to move from source to drain. Therefore, punch through
highly depends on the applied drain voltage and on the source/drain junction depths. Punch through causes a rapidly
increasing current with increasing drain-source voltage. This effect is undesirable as it increases the output
conductance and limits the maximum operating voltage of the device.

Conclusion:
A simple way to reduce the punch through effect is to increase the overall bulk doping level. As a result the drain
and source depletion regions will become smaller and will not establish a parasitic current path. Since a higher bulk
doping increases the subthreshold swing at the same time. Other methods to prevent punch through which have
almost no effect on the subthreshold. They make use of spatially restricted dopand implantations like (a) delta
doping, (b) halo, or (c) pocket implants heading for a shield against punch through without affecting the
subthreshold swing.

REFERNCES:
[1] C. Michael stockinger, institute of microelectronics.
[2] R. wittmann, institute of microelectronics.
[3] Bart van zegbroeck, principle of semiconductor device.
[4] Fu-chish, IEEE trans, electron. Devices. OCT 1983.
[5] Botkar, Integrated circuit. KHANNA PUBLISHERS. 2008.
[6] Dustin. K , Slisher, Ronald, Scaling of Si-MOSFET for Digital Application.
[7] Gerhard klimeck ECE606 Solid state devices LEC 25, Modren MOSFET.