Professional Documents
Culture Documents
Determination of The Elastic Properties of Au5Sn and AuSn PDF
Determination of The Elastic Properties of Au5Sn and AuSn PDF
7, 2008
DOI: 10.1007/s11664-008-0453-0
2008 TMS
INTRODUCTION
In electronic/optoelectronic packaging, Au-Sn
solder is widely used as preforms, coatings, or
bumps for flip-chip bonding because of its environmental friendliness, superior creep resistance, high
thermal and electrical conductivities, reduced oxide
formation, and good corrosion resistance.1,2 Two
intermetallic compounds, Au5Sn (f) and AuSn (d),
constitute eutectic Au-Sn solder (29 at.% Sn), which
has a comparatively low melting point of 280C.2
Although the vast majority of research15 has
focused on the microstructure of the solder and on
its evolution during interfacial reaction between the
solder and a pad to bridge the gap between the
microstructure and mechanical property of the solder joints, surprisingly few studies of the mechanical properties of these Au-Sn compounds themselves
exist in the literature.68 This is attributable mainly
to the difficulty in preparing the single-phase samples and the limitations of the available experimental techniques.
(Received December 16, 2007; accepted March 19, 2008;
published online April 23, 2008)
968
Determination of the Elastic Properties of Au5Sn and AuSn from Ab Initio Calculations
969
Specimen/Technique
E (GPa)
Au5Sn (f)
Bulk, resonance
Diffusion couples,
nanoindentation
Bulk, resonance
Thick film, microindentation
Bulk, nanoindentation
0.4
626
768
0.3
716
1017
878
AuSn (d)
the elastic constants of these intermetallics to represent their elastic anisotropy. To the best of our
knowledge, however, no research on this particular
aspect has been found in the literature.
Ab initio calculation is being widely utilized for
the prediction of material properties by virtue of the
increase of computing power and the development of
the density functional theory (DFT). Mehl et al.
performed the first DFT calculations of the elastic
constants of various intermetallic compounds in a
series of studies.911 Recently, Lee et al.12,13 provided evidence on the applicability of DFT calculations with the pseudopotential method for Sn-based
intermetallic compounds. It can be seen from these
two examples that the experimental data on singlecrystal elastic constants can be enriched using the
VoigtReussHill method, and bounds can be placed
on polycrystalline elastic moduli, so that they can be
compared with existing polycrystalline data. In our
study, we computed the full set of elastic constants
by performing the first-principles pseudopotential
total energy calculations on both Au5Sn (f) and
AuSn (d). Our aims are (i) to determine the ideal
elastic properties of the f and d phases and (ii) to
investigate their elastic anisotropy.
METHODOLOGY
Au5Sn (f) crystallizes in the space group R3 (no.
146) belonging to the trigonal crystal structure
(Fig. 1a), which can be described by two cell
parameters a and c.14 The Sn atom occupies the 3a
site (0, 0, 0), and there are three Au sites: Au1
located at 3a positions (0, 0, 0.3307), Au2 located at
3a positions (0, 0, 0.6693), and Au3 resides at 9b
positions (0.3333, 0.3403, 0.1667). The crystal
structure of AuSn (d) is depicted in Fig. 1b. The
compound crystallizes in a hexagonal lattice with
the P63/mmc space group (no. 194).15 It has four
atoms per unit cell; there is one position of Au at 2a
site and one position of Sn at 2c site. We used their
conventional cells for all the ab initio calculations.
The CASTEP code16,17 was used in the present
calculations, wherein the Vanderbilt-type ultrasoft
pseudopotential,18 the PW91 form19 of the generalized gradient approximation (GGA), and a
plane-wave basis set were employed to describe
electronion interactions, to take into account
970
Au5Sn
AuSn
Method
)
a (A
)
c (A
Calc.
5.167
14.388
Expt.14
5.092
14.333
Calc.
4.245
5.659
Expt.15
4.322
5.523
Fractional z
Coordinate (z/c)
z(Sn) = 0
z(Au1) = 0.3315
z(Au2) = 0.6685
z(Au3) = 0.1667
z(Sn) = 0
z(Au1) = 0.3307
z(Au2) = 0.6693
z(Au3) = 0.1667
z(Sn) = 0.2500
z(Au) = 0
z(Sn) = 0.2500
z(Au) = 0
Determination of the Elastic Properties of Au5Sn and AuSn from Ab Initio Calculations
971
Table III. Calculated Elastic Stiffness (Cij) and Compliance (Sij) Constants of Single-Crystal Au5Sn and AuSn
Au5Sn
AuSn
PW91
PW91
PW91
PBE
LDA
PW91
Cij (GPa)
Sij (10-3/GPa)
Cij (GPa)
Sij (10-3/GPa)
Cij (GPa)
Sij (10-3/GPa)
Cij (GPa)
Sij (10-3/GPa)
Cij (GPa)
Sij (10-3/GPa)
Cij (GPa)
Sij (10-3/GPa)
11
33
44
12
13
14
15
160
15
165
15
103
36
115
21
126
25
108
30
181
9.5
173
10
164
8.1
165
7.8
205
6.3
158
8.8
30
33
34
30
14
69
15
65
24
42
17
59
117
-8.4
121
-8.3
88
-29
86
-14
103
-19
89
-23
102
-3.5
104
-3.7
62
-2.7
61
-2.4
72
-2.0
66
-2.9
-1.0
0.7
-1.6
1.1
0.6
-0.4
1.4
-0.9
AuSn
Voigt
HS upper
HS lower
Reuss
Voigt
HS upper
HS lower
Reuss
28.48
27.97
27.81
27.16
17.80
15.59
13.50
11.87
79.51
78.18
77.76
76.07
50.04
44.17
38.51
34.06
v
0.3958
0.3976
0.3981
0.4003
0.4056
0.4162
0.4266
0.4350
972
Fig. 2. (a) Directional dependence of Youngs modulus in Au5Sn. Plane projections of the directional dependence of Youngs modulus on (b) the
(100), (010), and (001), and (c) (120) planes.
Determination of the Elastic Properties of Au5Sn and AuSn from Ab Initio Calculations
973
The authors thank the Natural Science Foundation of China (No. 50675047) for its financial support; J. Cheng and J.C. Zhu, Harbin Institute of
Technology, for their valuable help with the execution of CASTEP code; and Shanghai Supercomputer
Center (SSC) for supercomputing resources provided.
REFERENCES
1. G.S. Matijasevic, C.C. Lee, and C.Y. Wang, Thin Solid Films
223, 276 (1993). doi:10.1016/0040-6090(93)90533-U.
2. D.G. Ivey, Micron 29, 281 (1998). doi:10.1016/S09684328(97)00057-7.
3. H. Song, J. Morris, and M. McCormack, J. Electron. Mater.
29, 1038 (2000). doi:10.1007/s11664-000-0170-9.
4. H. Song, J. Ahn, and J. Morris, J. Electron. Mater. 30, 1083
(2001). doi:10.1007/s11664-001-0133-9.
5. J.-W. Yoon, H.-S. Chun, and S.-B. Jung, J. Mater. Res. 22,
1219 (2007). doi:10.1557/jmr.2007.0145.
6. F.G. Yost, M.M. Karnowsky, W.D. Drotning, and J.H. Gieske,
Metall. Mater. Trans. A 21, 1885 (1990). doi:10.1007/
BF02647236.
974
7. A. Vicenzo, M. Rea, L. Vonella, M. Bestetti, and P.L.
Cavallotti, J. Solid State Electrochem. 8, 159 (2004).
doi:10.1007/s10008-003-0428-2.
8. R.R. Chromik, N. Wang, A. Shugar, L. Limata, M.R. Notis,
and R.P. Vinci, J. Mater. Res. 20, 2161 (2005). doi:10.1557/
JMR.2005.0269.
9. M.J. Mehl, J.E. Osburn, D.A. Papaconstantopoulos, and
B.M. Klein, Phys. Rev. B 41, 10311 (1990). doi:10.1103/
PhysRevB.41.10311.
10. J.E. Osburn, M.J. Mehl, and B.M. Klein, Phys. Rev. B 43,
1805 (1991). doi:10.1103/PhysRevB.43.1805.
11. M.J. Mehl, D.J. Singh, and D.A. Papaconstantopoulos,
Mater. Sci. Eng. A 170, 49 (1993). doi:10.1016/0921-5093
(93)90368-O.
12. N.T.S. Lee, V.B.C. Tan, and K.M. Lim, Appl. Phys. Lett. 88,
031913 (2006). doi:10.1063/1.2165280.
13. N.T.S. Lee, V.B.C. Tan, and K.M. Lim, Appl. Phys. Lett. 89,
141908 (2006). doi:10.1063/1.2358832.
14. K. Osada, S. Yamaguchi, and M. Hirabayashi, Trans. Jpn.
Inst. Met. 15, 256 (1974).
15. J.-P. Jan, W.B. Pearson, A. Kjekshus, and S.B. Woods, Can.
J. Phys. 41, 2252 (1963).
16. M.C. Payne, M.P. Teter, D.C. Allan, T.A. Arias, and J.D.
Joannopoulos, Rev. Mod. Phys. 64, 1045 (1992). doi:10.1103/
RevModPhys.64.1045.
17. M.D. Segall, P.J.D. Lindan, M.J. Probert, C.J. Pickard,
P.J. Hasnip, S.J. Clark, and M.C. Payne, J. Phys.: Condens.
Matter 14, 2717 (2002). doi:10.1088/0953-8984/14/11/301.
18. D. Vanderbilt, Phys. Rev. B 41, 7892 (1990). doi:10.1103/
PhysRevB.41.7892.