Download as pdf or txt
Download as pdf or txt
You are on page 1of 7

MPF102

Preferred Devices

JFET VHF Amplifier


NChannel Depletion
Features

PbFree Package is Available*

http://onsemi.com
1 DRAIN

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Drain Source Voltage

VDS

25

Vdc

Drain Gate Voltage

VDG

25

Vdc

GateSource Voltage

VGS

25

Vdc

Gate Current

IG

10

mAdc

Total Device Dissipation


@ TA = 25C
Derate above 25C

PD
350
2.8

mW
mW/C

TJ

125

Tstg

65 to +150

Junction Temperature Range


Storage Temperature Range

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

3
GATE

2 SOURCE

TO92 (TO226AA)
CASE 2911
STYLE 5

1
2

MARKING DIAGRAM

MPF
102
AYWW G
G

MPF102 = Device Code


A
= Assembly Location
Y
= Year
WW
= Work Week
G
= PbFree Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
Device
MPF102
MPF102G

Package

Shipping

TO92

1000 Units/Bulk

TO92
(PbFree)

1000 Units/Bulk

Preferred devices are recommended choices for future use


and best overall value.

*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

January, 2006 Rev. 3

Publication Order Number:


MPF102/D

MPF102
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic

Symbol

Min

Max

Unit

25

Vdc

2.0
2.0

nAdc
mAdc

8.0

Vdc

0.5

7.5

Vdc

2.0

20

mAdc

2000
1600

7500

mmhos

800

mmhos

200

mmhos

7.0

pF

3.0

pF

OFF CHARACTERISTICS
Gate Source Breakdown Voltage
(IG = 10 mAdc, VDS = 0)

V(BR)GSS

Gate Reverse Current


(VGS = 15 Vdc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 100C)

IGSS

Gate Source Cutoff Voltage


(VDS = 15 Vdc, ID = 2.0 nAdc)

VGS(off)

Gate Source Voltage


(VDS = 15 Vdc, ID = 0.2 mAdc)

VGS

ON CHARACTERISTICS
Zero Gate Voltage Drain Current (Note 1)
(VDS = 15 Vdc, VGS = 0 Vdc)

IDSS

SMALL SIGNAL CHARACTERISTICS


Forward Transfer Admittance (Note 1)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)

yfs

Input Admittance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)

Re(yis)

Output Conductance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)

Re(yos)

Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

Ciss

Reverse Transfer Capacitance


(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

Crss

1. Pulse Test; Pulse Width v 630 ms, Duty Cycle v 10%.

http://onsemi.com
2

MPF102
COMMON SOURCE CHARACTERISTICS

30
20

grs , REVERSE TRANSADMITTANCE (mmhos)


brs , REVERSE SUSCEPTANCE (mmhos)

gis, INPUT CONDUCTANCE (mmhos)


bis, INPUT SUSCEPTANCE (mmhos)

ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25C)

bis @ IDSS

10
7.0
5.0
3.0

gis @ IDSS

2.0
gis @ 0.25 IDSS
1.0
0.7
0.5

bis @ 0.25 IDSS

0.3

10

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

5.0
3.0
2.0
brs @ IDSS
1.0
0.7
0.5

0.25 IDSS

0.3
0.2
0.1
0.07
0.05

grs @ IDSS, 0.25 IDSS


10

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

Figure 2. Reverse Transfer Admittance (yrs)

20

10

10
7.0
5.0

gos, OUTPUT ADMITTANCE (mhos)


bos, OUTPUT SUSCEPTANCE (mhos)

gfs, FORWARD TRANSCONDUCTANCE (mmhos)


|b fs|, FORWARD SUSCEPTANCE (mmhos)

Figure 1. Input Admittance (yis)

20

gfs @ IDSS
gfs @ 0.25 IDSS

3.0
2.0
1.0
0.7
0.5

|bfs| @ IDSS
|bfs| @ 0.25 IDSS

5.0
bos @ IDSS and 0.25 IDSS

2.0
1.0
0.5
0.2

gos @ IDSS

0.1
0.05
gos @ 0.25 IDSS

0.02

0.3
0.2

0.01
10

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

10

Figure 3. Forward Transfer Admittance (yfs)

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

Figure 4. Output Admittance (yos)

http://onsemi.com
3

MPF102
COMMON SOURCE CHARACTERISTICS
SPARAMETERS
(VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30

20

10

0
1.0

40

350

340

330
320

40

310

50

20

10

310
900

500

ID = IDSS

800
60

300

400
500

0.7

600
0.6

900

300
0.1

500

70

290

0.2
700

600

290

400

700
800

700
800

90

320

ID = IDSS, 0.25 IDSS

600

80

330

0.4

300

70

340

0.3

400

50
0.8

350

300

200

60

200

100
0.9

30

ID = 0.25 IDSS

100

80

280

300

280

0.0

200

270

90

100

260

100

260

110

250

110

250

120

240

120

240

130

230

130

230

140

220

140

220

900

150

160

170

180

190

200

210

150

160

Figure 5. S11s
30

20

10

350

170

340

330

30

20

10

80
90

700

110

0.4

800
600

100

210

0
350
340
330
100 200
I
=
0.25
IDSS
D
300
1.0
400
100 200
500
300
600
400
700
0.9
500
800
600
ID = IDSS
700
900
800
900
0.8

310

50

300

60

290

70

280

80

270

90

270

260

100

260

250

110

250

240

120

240

230

130

230

220

140

220

320

310

300
0.7

290

900
700

600

200

40

0.5
60
900

190

320

0.6
50

800

180

Figure 6. S12s

40

70

270

100

500

0.3
ID = 0.25 IDSS
500

0.3
100

400

400

280

0.6

300

200

0.4

100

0.5

300
120

ID = IDSS

200

130
0.6

140
150

160

170

180

190

200

210

150

Figure 7. S21s

160

170

180

190

Figure 8. S22s
http://onsemi.com
4

200

210

MPF102
COMMON GATE CHARACTERISTICS

grg , REVERSE TRANSADMITTANCE (mmhos)


brg , REVERSE SUSCEPTANCE (mmhos)

ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25C)

gig, INPUT CONDUCTANCE (mmhos)


big, INPUT SUSCEPTANCE (mmhos)

20
10
7.0
5.0

gig @ IDSS

3.0

grg @ 0.25 IDSS

2.0
1.0
0.7
0.5

big @ IDSS
big @ 0.25 IDSS

0.3
0.2

10

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

0.5
0.3

0.1
0.07
0.05
0.25 IDSS

0.03
0.02
0.01

0.007
0.005

500 700 1000

brg @ IDSS

0.2

gig @ IDSS, 0.25 IDSS


10

10
7.0
5.0

gfg @ IDSS

3.0

gfg @ 0.25 IDSS

2.0
1.0
0.7
0.5
bfg @ IDSS

0.3

brg @ 0.25 IDSS

0.2

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

Figure 10. Reverse Transfer Admittance (yrg)

gog, OUTPUT ADMITTANCE (mmhos)


bog, OUTPUT SUSCEPTANCE (mmhos)

gfg , FORWARD TRANSCONDUCTANCE (mmhos)


bfg , FORWARD SUSCEPTANCE (mmhos)

Figure 9. Input Admittance (yig)

20

1.0
0.7
0.5

bog @ IDSS, 0.25 IDSS

0.3
0.2
0.1
0.07
0.05

gog @ IDSS

0.03
0.02
gog @ 0.25 IDSS

0.1

0.01
10

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

10

Figure 11. Forward Transfer Admittance (yfg)

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

Figure 12. Output Admittance (yog)

http://onsemi.com
5

MPF102
COMMON GATE CHARACTERISTICS
SPARAMETERS
(VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30

20

10

350

340

330

30

0.7

40

100

310

50

300

60

290

70

280

80

350

340

330

0.04

200

300

320

0.03

400

100

500
200

ID = IDSS
0.4

310

600

300

0.5
60
70

40

10

ID = 0.25 IDSS

0.6
50

320

20

0.02

700

400
500

300

800

600
900

0.01

290

700
80

800

0.3

900

90

90

270

100

ID = IDSS
110

110

250

270

500
600

100

260

280

0.0
100

700

600
700

260

ID = 0.25 IDSS

250

0.01

800
120

120

240

240

800

0.02
900

130

130

230

230
900

140

140

220
150

160

170

180

190

200

210

20

10

350

150

160

170

340

330

30

20

10

40

320

190

0
1.5
1.0

350
300

200

210

340

330

500

200

100

700
600
800

0.9

ID = IDSS

320

400

100

0.4
50

180

Figure 14. S12g

0.5

40

220

0.04

Figure 13. S11g


30

0.03

900

310

50

300

60

290

70

280

80

270

90

270

100

260

100

260

110

250

110

250

120

240

120

240

130

230

130

230

140

220

140

220

100

ID = IDSS, 0.25 IDSS

0.3

0.8

60
0.2

70

310

ID = 0.25 IDSS

80
0.1

900

90

300
0.7

290
280

0.6

900

150

160

170

180

190

200

210

150

Figure 15. S21g

160

170

180

190

Figure 16. S22g


http://onsemi.com
6

200

210

MPF102
PACKAGE DIMENSIONS

TO92 (TO226)
CASE 2911
ISSUE AL

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.

R
P
L
SEATING
PLANE

DIM
A
B
C
D
G
H
J
K
L
N
P
R
V

X X
G

H
V

C
SECTION XX

INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500

0.250

0.080
0.105
0.100
0.115

0.135

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70

6.35

2.04
2.66

2.54
2.93

3.43

STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION


LITERATURE FULFILLMENT:
N. American Technical Support: 8002829855 Toll Free
Literature Distribution Center for ON Semiconductor
USA/Canada
P.O. Box 61312, Phoenix, Arizona 850821312 USA
Phone: 4808297710 or 8003443860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
291 Kamimeguro, Meguroku, Tokyo, Japan 1530051
Fax: 4808297709 or 8003443867 Toll Free USA/Canada
Phone: 81357733850
Email: orderlit@onsemi.com

http://onsemi.com
7

ON Semiconductor Website: http://onsemi.com


Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.

MPF102/D

You might also like