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Magnetron Sputtering PDF
Magnetron Sputtering PDF
Content
Why sputtering?
Physics of sputtering deposition
DC and RF Sputtering
Standard procedures in BESTEC Chimera
Why sputtering?
We are working in thin film world a technique to
Why sputtering?
Sputtering does not require too high vacuum;
The raw materials must not be high purity;
Able to grow the films with very slow rates;
High quality of the film can be reliable;
Easy for large-scale production.
Content
Why sputtering?
Physics of sputtering deposition
DC and RF Sputtering
Standard procedures in BESTEC Chimera
Concepts in sputtering
Target: Source material to fabricate the film on the
Concepts in sputtering
Sputtering targets
Sputter sources
Shutter
A used target
Chimneys
Concepts in sputtering
Base pressure: the pressure in the SP chamber before
placed under the target to trap the charges from the plasma;
The electrons are not free to bombard the substrate to the
same extent as with diode sputtering;
Circuitous path carved by these same electrons when trapped
in the magnetic field, enhances their probability of ionizing a
neutral gas molecule. This increase in available ions
significantly increases the rate at which target material is
eroded and subsequently deposited onto the substrate.
Content
Why sputtering?
Physics of sputtering deposition
DC and RF Sputtering
Standard procedures in BESTEC Chimera
DC Magnetron Sputtering
If the target is conductive (metallic materials), a DC
RF Magnetron Sputtering
As target is insulator, DC power is not suitable, anode
Content
Why sputtering?
Physics of sputtering deposition
DC and RF Sputtering
Standard procedures in BESTEC Chimera
Electronic cabinet
(MBE)
Electronic cabinet
(SP)
MBE
Preparation
Transfer arm 1
Sputter
Turbo pump
Loadlock
Transfer arm 2
H2 atomic source;
Can heat wafer to ~600oC;
Permanent magnet (~500 Oe) for magnetic field
annealing.
PR chamber view
from the bottom
Permanent magnet
Sputter sources
SP manipulator
min. distance
needed);
Do sputtering
Finish and transfer back to LL unload
samples
Load samples to LL
Load the samples to the LL;
Evacuate the LL;
Wait for the vacuum (should be ~10-7 Torr range);
Degas the chamber (200oC 30 min.) if required;
Transfer to PR chamber for cleaning or to SP
Transferring routes
MBE
(Epitaxial deposition)
Preparation
(Plasma, hydrogen
cleaning)
Loadlock
Sample
Sputter
(Sputtering deposition)
Transferring from LL to SP
V3 for transferring;
Carefully transport of samples by transfer
arms;
Transfer to SP only when the PR manipulator
is at Process position.
Preparation of SP stage
130 mm);
Set rotation speed (e.g. 45 rpm);
Open SP manipulator shutter when deposit or
P10;
Close V31 and open V37 to clean
the gas lines before sputtering;
Close V37 as the gas lines are
clean enough (pressure at G14 <
1.0e-2 Torr);
Setting generators
Co-sputtering is possible;
Two sources (DC PDC) for 2-inch targets;
Three source (DC PDC RF) for 2-inch targets and 4-inch
target;
Frequency and pulse pause should be taken care for PDC.
Normal users are not able to create a new macro but can
Completion of sputter
Reset all valves and pumps to get
transferring;
Vent the LL then unload the samples;
Load new samples (if needed) and close
the LL;
Pump the LL down;
Do not forget wearing clean suits to
avoid the contamination to the LL.
More
This presentation only provides very basic information
More
Further reading
Contact
Dr. Ngo Duc The (Ryan), Advanced Memory Laboratory,
ECE, National University of Singapore
#05-08, E4A, Faculty of Engineering
Phone :+65-6516 5513
HP
:+65-90710150
E-mail: elendt@nus.edu.sg
Dr. Zheng Yuhong, Advanced Memory Laboratory, ECE,
National University of Singapore
#05-08, E4A, Faculty of Engineering
Phone :+65-6516 5513
HP
:+65-98677817
E-mail: elezheng@nus.edu.sg