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Ti:Sapphire: For High Performance Lasers
Ti:Sapphire: For High Performance Lasers
High Figures
of Merit (FOM)
No Bulk Scatter
Brewsters
Angle and Plano
Rods Available
in Custom
Configurations
High Laser
Damage
Threshold
The GT CrystaI
Systems Advantage
200 mm
Worlds largest Ti:Sapphire crystals
Manufacturing
Laser Rods
S1
60.4
C-AXIS
Figure of Merit
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
0
0.5
1.5
2.5
4.5
3.5
5.5
Ti:Sapphire Applications
NORMAL
OPTICAL PATH A
C-AXIS
60.4
t
(REF)
3.50
3.00
2.50
2.00
1.50
1.00
.50
450
550
650
750
wavelength
850
950
1000
Material Properties
of HEM Ti:Sapphire
Physical
1.0
Chemical
Formula
Ti +:AI203
Crystal
Structure
Hexagonal System
(Rhombohedral)
Unit Cell
a=4.758 , c=12.991
.02
Density
3.98 g/cm3
0.0
600
Hardness
Melting Point
2040C (nominal)
Intensity
0.8
0.6
0.4
700
800
900
1000
1200
wavelength (nm)
Polarization
Thermal
0.105 cal/cm-sec-C
Thermal
Expansion
Specific Heat
0.10 cal/g
Heat Capacity
18.6 cal/C-mole
@room temperature
Laser
1.0
0.8
0.6
Intensity
Thermal
Conductivity
0.4
0.2
Laser Action
4-Level Vibronic
Absorption
Band
Tunable Range
Fluorescence
Lifetime
3.2 ms
Peak
Cross-Section
Refractive Index
1.76 (nominal)
Absorbance
400 450
500
550
Fluorescence
600
650
wavelength (nm)
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