SKM 75 GB 128 DN

Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified SEMITRANSTM M

Symbol Conditions Values Units SPT IGBT Module
IGBT
VCES 1200 V SKM 75 GB 128 DN
IC Tcase = 25 (80) °C 100 (70) A
ICRM Tcase = 25 (80) °C, tp =1 ms 200 (140) A
VGES ± 20 V Target Data
Tvj, (Tstg) TOPERATION ≤ Tstg – 40 ... +150 (125) °C
Visol AC, 1 min. 2500 V
Inverse Diode
IFAV = – IC Tcase = 25 (80) °C 75 (50) A
IFRM Tcase = 25 (80) °C, tp < 1 ms 200 (140) A
IFSM tp = 10 ms; sin.; Tj = 150 °C 550 A
Freewheeling Diode
IFAV = – IC Tcase = 25 (80) °C A
IFRM Tcase = 25 (80) °C, tp < 1 ms A
IFSM tp = 10 ms; sin.; Tj = 150 °C A 



Characteristics Tcase = 25 °C, unless otherwise specified 

Symbol Conditions min. typ. max. Units
IGBT
VGE(TO) VGE = VCE, IC = 2 mA 4,5 5,5 6,5 V
ICES VGE = 0, VCE = VCES, Tj = 25 (125) °C tbd mA
VCE(TO) 1,0 (0,9) 1,15 V
rCE VGE = 15 V, Tj = 25 (125) °C 20 (28) 25(tbd) mΩ
VCE(sat) IC = 50 A, VGE = 15 V, chip level 2,0 (2,3) 2,4 V
Cies tbd nF

Coes VGE = 0, VCE = 25 V, f = 1 MHz tbd nF
Cres tbd nF Features
LCE 25 nH • Homogeneous Si
RCC´+ EE´ resistance, terminal-chip 25 (125) °C tbd mΩ
• SPT = Soft-Punch-Through
td(on) under following conditions: 140 ns technology
tr VCC = 600 V, IC = 50 A, 55 ns
• VCE(sat) with positive temperature
td(off) RGon = RGoff = 18 Ω, Tj = 125 °C, 850 ns
tf VGE ± 15 V 40 ns
coefficient
Eon 7 mJ • High short circuit capability, self
Eoff 4,5 mJ limiting to 6 x IC
Inverse Diode
Typical Applications
VF = VEC IF = 50 A; VGE = 0 V; Tj = 25 (125) °C 2,0 (1,8) 2,5 V
VT(TO) Tj = 25 (125) °C 1,1 (tbd) 1,2 V • AC inverter drives
rT Tj = 25 (125) °C 18 (tbd) 26(tbd) mΩ • UPS
IRRM IF = 50 A; Tj = 125 °C tbd A • Electronic welders at fsw >
Qrr di/dt =500 A/µs tbd µC 20 kHz
Err VGE = 0 V tbd mJ


  
  !

Freewheeling Diode of GAL/GAR type

VF = VEC IF = 50 A; VGE = 0 V; Tj = 25 (125) °C V
VTO Tj = 25 (125) °C V
rT Tj = 25 (125) °C mΩ
IRRM IF = 50 A; Tj = 125 °C A
Qrr VGE = 0 V µC
Err mJ
Thermal Characteristics
Rth(j-c) per IGBT 0,27 K/W
Rth(j-c)D per FWD 0,6 K/W
Rth(j-c)FD per Inverse Diode K/W
Rth(c-s) per module 0,05 K/W
Mechanical Data
Ms to heatsink (M6) 3 5 Nm
Mt for terminals (M5) 2,5 5 Nm
w 160 g

© by SEMIKRON 011113 1
SKM 75 GB 128 DN

This is an electrostatic discharge sensitive

device (ESDS).
Please observe the international standard
IEC 60747-1, Chapter IX.

Packing Unit 8 pcs SEMIBOX A

Mounting Kit 10 pcs Ident-No. 33321100



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