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Khoo Chun Yong - Presentation PDF
Khoo Chun Yong - Presentation PDF
Session
Self
Introduction
Biography
Malaysian
D.O.B: February 6, 1983
Age: 31 years old
Horoscope: Aquarius
Born in Klang The Royal
City, Selangor, Malaysia
Raised up in Banting, a
small town
Educational Background
2001
|
2006
2006
|
2009
2009
|
2014
Languages + Dialects
Employment History
1. Company Name
Position Title
Specialization
Industry
Duration
Work Description
Responsibilities
: Perform various performance tests identified in the NSF/ANSI Standard 49
Perform various performance tests identified in the ISO 14644 Standards,
Standards/Guidelines published by CDC TW, etc.
Employment History
2. Company Name
Position Title
Specialization
Industry
Duration
Work Description
Responsibilities
:
:
:
:
:
Employment History
3. Company Name
a. Position Title
Specialization
Industry
Duration
Work Description
Project Involved
Responsibilities
:
:
:
:
:
Part of My Thesis
EXPERIMENTAL STUDY ON THE MOISTURE
CONTROL IN WAFER CARRIER
PRESENTED BY: KHOO CHUN YONG
GUIDING PROFESSOR: PROF. HU SHIH-CHENG
DATE: JULY 31, 2014
Introduction
Front Opening Unified Pods (FOUPs), the polymeric-based wafer carrier, have
three (3) critical performance functions:
1. The FOUP must exhibit precise wafer access for reliable, high throughput wafer
transfer.
2. The FOUP must provide secure wafer protection, keeping the wafer isolated
from contamination and damage due to mechanical or electrical effects.
3. The FOUP must enable reliable interoperability with process tools and
automated material handling systems (AMHS)
(Niebeling, 2000)
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Introduction
Moisture inside a FOUP is also a problematic contaminant :
More difficult to be expelled than oxygen - ingress of moisture through the wall
surfaces of the polymeric based FOUP.
Polarity - moisture adsorbs onto metallic surfaces strongly relative to other
gases, cannot be effectively removed with inert gas purging.
Strong hydrogen bonding ability - moisture can attract polar contaminants to the
surface.
(Rana et al, 2003 ; Verghese et al.,1999)
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Introduction
Table: Advanced processes (below 45 nm node) with high sensitivity to impurities.
FEOL Process
Impurities
Oxygen
Moisture
Organic
Gate oxide
Hemispherical grained
EPI / Pre-EPI
Acid
Dopant
interface
X
(HSG) poly-Si
X
X
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Introduction
Transition of 300 mm towards 450 mm wafer manufacturing, the
stringent cleanliness requirement of a 450 mm wafer FOUP includes:
AMC,
Oxygen ( 100 ppm), and
moisture contents (relative humidity, RH 5%)
(ITRS, 2013)
Objectives
The objectives of the study are as follows:
450 mm PC FOUP
To investigate the effect of CDA purging rates on purging efficiency.
300 mm FOUP
To investigate the effect of different base materials on purging
efficiency.
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Experimental parameters
* (5 pieces)
Moisture
Transmitter
* Only one Logger was drawn due to the simplification of schematic diagram.
Parameter
300 mm FOUP
450 mm FOUP
PC (alpha version)
LCP (alpha version)
Barrier (Commercial)
PC (alpha version)
15 to 105 LPM
30 to 180 LPM
No. of inlets/
outlets
2inlets-2outlets,
2inlets-2outlets,
Purging time
30 minutes
30 minutes
Recovery time
90 minutes
90 minutes
Material base
Wafer
300 mm
Diameter
450 mm
Thickness
775 m
925 m
Area
706 cm2
1,589 cm2
Volume
32 L
73.5 L
Weight
125 g
342 g
640
1490
10 mm
Die /Wafer
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TCRI =
TCRI
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18
19
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Conclusions
For a 450 mm PC FOUP,
Higher purging rates of CDA demonstrate favorable moisture
depletion rate within the spaces between wafers in a fully loaded
FOUP.
- Convection of purging gas : dominant mode of mass transfer in early stage, and
- Diffusion of purging gas into the tiny spaces between wafer slots later
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Conclusions
For 300 mm FOUPs,
Base materials show significant effects on purging efficiency.
Moisture decay trend: PC << LCP Barrier FOUP
LCP FOUP demonstrates the promising moisture decay rates that are
highly comparative to the results of Barrier FOUP fully loaded.
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