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Chapter 5
Chapter 5
CHAPTER 5
5.1 Introduction
Catalytic splitting of pure water into hydrogen and oxygen in the presence of
semiconductor powders with visible light is a promising approach from the
viewpoint of converting solar energy into chemical energy. The reaction (eq.
(1)) is typical of uphill-type reaction with a large positive change in the Gibbs
free energy (DG0 238 kJ mol1).
2H2 O ! 2H2 O2
2H2 O 4h ! O2 4H
The research was initially triggered by the potential of TiO2-based photoelectrochemical reactions for the decomposition of water into H2 and O2.1
Since then, a range of semiconductor materials have been examined as
powder photocatalysts in view of the emphasis placed on large-scale
RSC Energy and Environment Series No. 9
Photoelectrochemical Water Splitting: Materials, Processes and Architectures
Edited by Hans-Joachim Lewerenz and Laurence Peter
r The Royal Society of Chemistry 2013
Published by the Royal Society of Chemistry, www.rsc.org
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Chapter 5
26
Figure 5.1
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4,5
electronic conguration. More than 100 metal oxides have been reported to
exhibit water splitting activity, and some have achieved high quantum eciencies of several tens of percent. However, metal oxide photocatalysts in
principle work only under UV light (lo400 nm), as explained later. Although
some non-oxide materials such as CdS and CdSe have been examined, particularly for visible-light catalysis, successful photocatalytic systems have yet to
be achieved, primarily due to the lack of oxygen productivity and inherent
instability of the materials.7,8
The two major obstacles to the development of powder photocatalysts are
the discovery of new stable photocatalytic materials and the construction of a
suitable visible light-driven photocatalytic system. The application of metal
oxides for photocatalysis in the visible-light region is complicated by the deep
valence band positions (O2p orbitals) of these materials, resulting in a band gap
that is too large to harvest visible light.9 In general, the conduction band of a
metal oxide photocatalyst is formed by empty d orbitals of a transition metal or
s,p orbitals of a typical metal, which lie above the water reduction potential of
H2O (0 V vs. NHE at pH 0). On the other hand, the potential of the valence
band, which consists of O2p orbitals (ca. 3 V), is considerably more positive
than the water oxidation potential (1.23 V). Therefore, the band gaps of metal
oxide photocatalysts inevitably become wider than 3 eV, if they meet the
thermodynamic requirement for water splitting.
Since the N2p orbital has a higher potential energy than the O2p orbital, it
would be interesting to use a metal nitride or metal oxynitride as a photocatalyst. Figure 5.2 shows the schematic band structures of the metal oxide
NaTaO3 and (oxy)nitride BaTaO2N, both of which have the same perovskite
structure.3 The top of the valence band (i.e. the highest occupied molecular
orbital, HOMO) of the metal oxide consists of O2p orbitals. When N atoms are
Figure 5.2
Schematic band structures of a metal oxide (NaTaO3) and metal (oxy)nitride (BaTaO2N).
Reprinted with permission from Reference 3. Copyright 2007 American
Chemical Society.
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Chapter 5
partially or fully substituted for O atoms in a metal oxide, the HOMO of the
material is expected to shift above that of the corresponding metal oxide
without aecting the level of the bottom of the conduction band (i.e. the lowest
unoccupied molecular orbital, LUMO). DFT band structure calculations for
BaTaO2N indicated that the HOMO consists of hybridized N2p and O2p orbitals, whereas the LUMO is mainly composed of empty Ta5d orbitals. The
HOMO for the (oxy)nitride is at a higher potential energy than that of the
corresponding oxide due to the contribution of N2p orbitals, making the band
gap small enough to respond to visible light (o3 eV). Similar results were obtained in calculations for other (oxy)nitrides. In this chapter, (oxy)nitrides are
presented as non-oxide type materials for photocatalytic water splitting under
visible light, focusing on recent research progress made by the authors group.
Figure 5.3
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Figure 5.4
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Table 5.1
Chapter 5
0
Entry
Oxynitride
Band gap
energyb/eV
1
2
3
4
5
6
7
8
9
10
11
LaTiO2N
Ca0.25La0.75TiO2.25N0.75
TiNxOyFz
CaNbO2N
TaON
Ta3N5
CaTaO2N
SrTaO2N
BaTaO2N
LaTaON2
N-doped TiO2
2.0
2.0
2.3
1.9
2.5
2.1
2.4
2.1
1.9
2.0
2.6e
Activity/mmol h1
H2c
O2 d
Ref.
30
5.5
0.2
1.5
20
10
15
20
15
20
n.d.
15
15
17, 19
14
12
13
18
18
18
18
17, 19
41
60
43
46
660
420
0
0
0
0
1.6
Reaction conditions: 0.20.4 g of catalyst, 200 mL aqueous solution containing sacricial reagents,
300 W xenon lamp light source, Pyrex top irradiation-type reaction vessel with cuto lter.
b
Estimated from onset wavelength of diuse reectance spectra.
c
Loaded with nanoparticulate Pt as a cocatalyst, reacted in the presence of methanol (10 vol%),
sacricial reagent.
d
Sacricial reagent: silver nitrate (0.01 M).
e
Energy gap estimated from a shoulder peak (400500 nm).
decomposed by the photogenerated holes (instead of water oxidation) according to the reaction:
2N3 6h ! N2
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suggested that the enhancement was due to the promotion of the water reduction process originating from the lower defect density of the material. It is
also possible to prepare nanosized Ta3N5 particles through a template approach using a mesoporous carbon nitride (mpg-C3N4),22 which has a potential
to reduce or oxidize water with visible light as well.27,28 This method allows one
to prepare Ta3N5 nanoparticles with a primary particle size that in principle
reects the pore size of mpg-C3N4. Nanoparticles Ta3N5 having the smallest
particle size, which was prepared from mpg-C3N4 with a pore size of 7 nm,
showed approximately one order of magnitude higher activity than bulk
Ta3N5, as shown in Figure 5.5. In addition to the low particle size and high
surface area, the low density of defect sites would also result in an improvement
of the activity, since fewer defect sites would be favorable for electron migration
from the Ta3N5 bulk to the surface and/or electron transfer from the conduction band of Ta3N5 to the loaded Pt.21
Reducing the particle size of TaON, which exhibits higher activity than
Ta3N5 (see Table 1), has been examined in a similar manner. However, it was
dicult to suppress the generation of defects during the nitridation process,
because TaON is an intermediate phase between Ta2O5 and Ta3N5.23 As a
result, the as-obtained TaON did not show an appreciable increase in photocatalytic activity, despite a relatively small particle size (5080 nm). Although
the calcination of solid photocatalysts after preparation has been demonstrated
to be an eective approach for reducing the density of defects,29,30 such postcalcination appears to be disadvantageous for TaON due to its low thermal
Figure 5.5
Time courses of 0.5 wt% Pt-loaded Ta3N5 samples for H2 evolution from
aqueous methanol solution under visible light (l4400 nm), along with a
TEM image of Ta3N5 nanoparticles. Catalyst (0.2 g); an aqueous
methanol solution (20 vol%, 400 mL); light source, high pressure mercury
lamp (450 W); inner irradiation-type reaction vessel made of quartz or
Pyrex with or without an aqueous NaNO2 solution (2 M) lter.
Reprinted with permission from Reference 22. Copyright 2010 The Royal
Society of Chemistry.
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Chapter 5
Figure 5.6
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Chapter 5
Figure 5.7
(Left) Dependence of photocatalytic activity of 1 wt% RuO2-loaded bGe3N4 for overall water splitting on wavelength of incident light: l4 (A)
200, (B) 300, and (C) 400 nm. Catalyst (0.5 g); an aqueous H2SO4 solution
(1 M, 350400 mL); light source, high pressure mercury lamp (450 W);
inner irradiation-type reaction vessel made of quartz or Pyrex with or
without an aqueous NaNO2 solution (2 M) lter. (Right) UV-visible
diuse reectance spectrum of b-Ge3N4.
Reprinted with permission from Reference 34. Copyright 2007 American
Chemical Society.
with increasing the wavelength of the incident light, due to a decrease in the
number of incident photons from the light source. No H2 and O2 evolution was
observed when the reaction was carried out at wavelengths longer than 400 nm
or in the dark. These results indicate that the sharp absorption band at 350 nm,
indicative of the band gap transition from the valence band formed by N2p
orbitals to the conduction band formed by Ge4s,4p hybridized orbitals, contributes to promoting overall water splitting on RuO2-loaded b-Ge3N4. In
addition, it is clear that the broad absorption in the visible-light region assignable to impurities and/or defect sites is not available for the reaction. This
situation forced us to search for a new d10 compound that can function under
visible light.
5.5
To devise a new oxynitride with d10 electronic conguration that can decompose water under visible light, the solid solution of GaN and ZnO,
(Ga1xZnx)(N1xOx), was examined.36,37 The (Ga1xZnx)(N1xOx) solid solution is typically synthesized by nitriding a mixture of Ga2O3 and ZnO. Elemental analyses by inductively coupled plasma optical emission spectroscopy
(ICP-OES) revealed that the ratios of Ga to N and Zn to O in the as-prepared
material are close to unity, and N and O concentrations increase with the
Ga and Zn concentrations, respectively. The atomic composition is controllable
by changing the nitridation conditions.37 X-ray diraction and neutron
powder diraction analyses showed that the prepared samples are solid
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solutions of GaN and ZnO with no interstitial sites and no large disorder in the
material.38
While GaN and ZnO both have band gap energies greater than 3 eV and thus
do not absorb visible light, the (Ga1xZnx)(N1xOx) solid solution has absorption edges in the visible region. Figure 5.8 shows the UV-visible DRS for
several samples. The absorption edge of (Ga1xZnx)(N1xOx) lies at a wavelength longer than those of GaN and ZnO and shifts to longer wavelengths with
increasing Zn and O concentration (x) in (Ga1xZnx)(N1xOx). The band gap
energies of the solid solutions are estimated to be 2.42.8 eV based on the DRS.
It is thus clear that the visible-light-response of (Ga1xZnx)(N1xOx) originates
from the presence of ZnO in the crystal. Initially, the origin of the visible-light
absorption was thought to be band-gap narrowing of GaN due to pd
repulsion between Zn 3d and N 2p electrons in the upper part of the valence
band.36,37 Follow-up studies on the electronic structure of GaN-rich
(Ga1xZnx)(N1xOx) using photoluminescence spectroscopy and DFT calculations suggested that this material absorbs visible light via electron transitions
from the Zn acceptor level to the conduction band while maintaining the bandgap structure of the host GaN, as illustrated in Figure 5.9.39,40 Because the
concentration of Zn in (Ga1xZnx)(N1xOx) is relatively high, the acceptor level,
which is lled with electrons derived from O donor levels (or thermal excitation), is likely to behave as an impurity band with a high density of states.
Electrons can thus be transferred from the Zn acceptor level to the conduction
band by visible-light absorption.
The as-prepared (Ga1xZnx)(N1xOx) exhibited little photocatalytic
activity for water decomposition even under UV irradiation. However, modication by surface deposition of metal oxide nanoparticles as cocatalysts
Figure 5.8
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Chapter 5
Figure 5.9
Figure 5.10
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Chapter 5
(a)
(b)
Figure 5.11
UV-visible DRS traces for (A) ZnO, (B) ZnGeN2, and (C) a solid
solution between the two, (Zn1.44Ge)(N2.08O0.38).
Reprinted with permission from References 44 and 45. Copyright 2007
American Chemical Society.
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Figure 5.12
Chapter 5
photocatalysts with BaTaO2N extended the wavelength available for H2 evolution up to 660 nm.53 The photocatalytic performance of BaTaO2N for H2
evolution can be improved by 69 times as a result of forming a solid solution
with BaZrO3, due to an enhanced driving force for the redox reactions and the
reduction of defect density.54
Thus, several combinations of (oxy)nitrides for Z-scheme water splitting in
the presence of an IO3/I shuttle redox mediator have been achieved, as
schematically illustrated in Figure 5.12. The absorption wavelength available
for the individual H2 and O2 evolution has been increased up to 660 nm and
600 nm, respectively. The next challenges remain in the promotion of electron
transfer between two semiconductors and in the suppression of backward
reactions involving shuttle redox mediators.
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Figure 5.13
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Chapter 5
(a)
(b)
(c)
(d)
Figure 5.14
conguration in the presence of an applied bias greater than 0.6 V vs. Pt wire
cathode. A similar result was observed when Ta3N5 was employed as an anode
material. The IPCE of the optimized TaON and Ta3N5 electrode recorded at
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1.15 V vs. RHE was ca. 76% at 400 nm and 31% at 500 nm, the former of which
is the highest IPCE among oxynitride or nitride semiconductor photoelectrodes
reported so far.
In terms of available wavelength, photons with wavelengths up to 600 nm
are available for PEC water oxidation with Ta3N55860 and LaTiO2N.61,62
However, no photoanode (including metal oxides) with a band gap smaller
than 2.0 eV (corresponding to a 600 nm absorption band) that can oxidize
water without application of an external potential (except through the use of a
tandem cell conguration64) has been reported to date. As the band gap of
a given material is decreased, the driving forces for water oxidation and
reduction should inevitably decrease, making water splitting more dicult.
In such a situation, a niobium-based oxynitride, SrNbO2N, was shown to
achieve the functionality as a photoanode to oxidize water even without applying an external bias.65 SrNbO2N is a perovskite-type oxynitride consisting of
relatively earth-abundant metals that has a band gap of ca. 1.8 eV.66 SrNbO2N
powder also has the ability to photocatalytically reduce or oxidize water into
H2 or O2 in the presence of proper electron donors or acceptors, respectively.
When particulate SrNbO2N modied with colloidal IrO2 is employed as a
photoelectrode for visible-light-driven water splitting, it acts as an active
photoanode to oxidize water, even without an externally applied potential.
Nearly stoichiometric H2 and O2 evolution was observed during photoelectrolysis in a neutral electrolyte of Na2SO4 (pHE6) when a potential of
1.0-1.55 V vs. RHE was applied.
Figure 5.15 shows the dependence of photocurrent generated from the postnecked SrNbO2N electrode modied with colloidal IrO2 at 0.95 V vs. RHE on
the cuto wavelength of the incident light, along with the DRS of SrNbO2N.
Figure 5.15
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Chapter 5
The photocurrent was decreased with cuto wavelength, reaching almost zero
at 700 nm, which corresponds to the absorption edge of SrNbO2N. This result
indicates that PEC water oxidation occurs through light absorption by
SrNbO2N, and that an absorption band at longer wavelengths, assignable to
reduced Nb species (e.g. Nb41) which are defects of the material, does not
contribute to the reaction. The main problem of this electrode material is the
low IPCE, which was 0.2% at 400 nm in the presence of a 1.23 V (vs.
RHE) bias.
5.8 Conclusions
A range of (oxy)nitride materials for photocatalytic overall water splitting has
been developed. (Oxy)nitrides have been found to function as stable photocatalysts for water reduction and oxidation under visible irradiation, and the
(Ga1xZnx)(N1xOx) and (Zn11xGe)(N2Ox) solid solutions with d10 electronic
conguration have been shown to achieve overall water splitting under visible
light without noticeable degradation. Some of d0-type (oxy)nitrides are applicable to a two-step water splitting system that can harvest a wide range of
visible photons. Carefully prepared photoelectrodes based on d0-(oxy)nitrides
such as TaON and Ta3N5 exhibit excellent IPCEs for splitting water under
visible light in the presence of an external bias.
References
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
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