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by MGP20N40CL/D

SEMICONDUCTOR TECHNICAL DATA

 
 

 


 


  



20 AMPERES
VOLTAGE CLAMPED
NCHANNEL IGBT
VCE(on) = 1.8 VOLTS
400 VOLTS (CLAMPED)

This Logic Level Insulated Gate Bipolar Transistor (IGBT)

features GateEmitter ESD protection, GateCollector overvoltage
protection from SMARTDISCRETES monolithic circuitry for
usage as an Ignition Coil Driver.
Temperature Compensated GateCollector Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessors
Low Saturation Voltage
High Pulsed Current Capability

G
G
C

Rge

CASE 221A09
STYLE 9
TO220AB

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Rating

Symbol

Value

Unit

CollectorEmitter Voltage

VCES

CLAMPED

Vdc

CollectorGate Voltage

VCGR

CLAMPED

Vdc

VGE

CLAMPED

Vdc

IC

20

Adc

ICR

12

Apk

PD

150

Watts

ESD

3.5

kV

TJ, Tstg

55 to 175

RqJC
RqJA

1.0
62.5

C/W

TL

260

GateEmitter Voltage
Collector Current Continuous @ TC = 25C
Reversed Collector Current pulse width

t 100 ms

Total Power Dissipation @ TC = 25C (TO220)

Electrostatic Voltage GateEmitter
Operating and Storage Temperature Range

THERMAL CHARACTERISTICS
Thermal Resistance Junction to Case (TO220)
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds

10 lbfin (1.13 Nm)

Mounting Torque, 632 or M3 screw

UNCLAMPED INDUCTIVE SWITCHING CHARACTERISTICS

Single Pulse CollectorEmitter Avalanche Energy
@ Starting TJ = 25C
@ Starting TJ = 150C

EAS

mJ
550
150

SMARTDISCRETES is a trademark of Motorola, Inc.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

REV 1

TMOS
Motorola
Motorola, Inc.
1997

Power MOSFET Transistor Device Data

MGP20N40CL
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic

Symbol

Min

Typ

Max

370

405

430

500
100

Unit

OFF CHARACTERISTICS
CollectortoEmitter Breakdown Voltage
(IClamp = 10 mA, TJ = 40 to 150C)

V(BR)CES

Zero Gate Voltage Collector Current

(VCE = 350 V, VGE = 0 V, TJ = 150C)
(VCE = 15 V, VGE = 0 V, TJ = 150C)

ICES

Resistance GateEmitter (TJ = 40 to 150C)

RGE

10k

16k

30k

GateEmitter Breakdown Voltage (IG = 2 mA)

V(BR)GES

11

13

15

"V

IECS

50

mA

V(BR)ECS

26

40

120

1.0
0.75

1.7

2.2
1.8

1.1
1.4
1.4

1.4
1.9
1.8

gfe

10

18

pF

CollectorEmitter Reverse Leakage (VCE = 15 V, TJ = 150C)

CollectorEmitter Reversed Breakdown Voltage (IE = 75 mA)

Vdc

mA
W

ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VCE = VGE, IC = 1 mA)
(VCE = VGE, IC = 1 mA, TJ = 150C)

VGE(th)

CollectorEmitter OnVoltage
(VGE = 5 V, IC = 5 A)
(VGE = 5 V, IC = 10 A)
(VGE = 5 V, IC = 10 Adc, TJ = 150C)

VCE(on)

Forward Transconductance (VCE

u 5.0 V, IC = 10 A)

DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance

(VCE = 25 Vdc,
Vdc VGE = 0 Vdc,
Vdc
f = 1.0 MHz)

Transfer Capacitance

Cies

2800

Coes

200

Cres

25

SWITCHING CHARACTERISTICS (1)

Total Gate Charge
GateEmitter Charge

Qg

45

80

Qge

8.0

Qgc

20

( CC = 320 V,, IC = 20 A,,

(V
L = 200 mH, RG = 1 KW)

td(off)

14

tf

4.0

((VCC = 14 V,, IC = 20 A,,

L = 200 mH, RG = 1 KW)

td(on)

2.0

tr

6.0

(VCC = 280 V,
V IC = 20 A,
A
VGE = 5 V)

GateCollector Charge
TurnOff Delay Time
Fall Time
TurnOn Delay Time
Rise Time

nC

(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%.

Motorola TMOS Power MOSFET Transistor Device Data

MGP20N40CL
TYPICAL ELECTRICAL CHARACTERISTICS
40

VGE = 10 V
I C , COLLECTOR CURRENT (AMPS)

TJ = 25C

30
4V
20

10
3V
0

I C , COLLECTOR CURRENT (AMPS)

20

3V

10

VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)

VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)

Figure 1. Output Characteristics

Figure 2. Output Characteristics

VCE = 10 V
30

20
TJ = 125C

25C

10

4V

40

TJ = 125C

5V

30

10

VCE , COLLECTORTOEMITTER VOLTAGE (VOLTS)

I C , COLLECTOR CURRENT (AMPS)

40

5V

VGE = 10 V

10

2.2
VGE = 5 V
2.0

IC = 20 A

1.8
15 A
1.6
10 A

1.4
1.2
1.0
50

50

100

VGE, GATETOEMITTER VOLTAGE (VOLTS)

TJ, JUNCTION TEMPERATURE (C)

Figure 3. Transfer Characteristics

Figure 4. CollectortoEmitter Saturation

Voltage versus Junction Temperature

150

10000
TJ = 25C

C, CAPACITANCE (pF)

VGE = 0 V
Cies

1000

Coes

100

Cres

10

1.0

25

50

75

100

125

150

175

200

VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)

Figure 5. Capacitance Variation

Motorola TMOS Power MOSFET Transistor Device Data

20

Qg
IL, LATCH CURRENT (AMPS)

VGE, GATETOEMITTER VOLTAGE (VOLTS)

MGP20N40CL

6
Qge

Qgc

TJ = 25C
IC = 20 A

10

20

30

12
10 mH

40

3 mH

16

25

50

75

100

125

Qg, TOTAL GATE CHARGE (nC)

TEMPERATURE (C)

Figure 6. GatetoEmitter Voltage

versus Total Charge

Figure 7. Latch Current versus Temperature

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

1.0
D = 0.5
0.2
0.1
0.1

P(pk)

0.05
0.02

t1

0.01

t2
DUTY CYCLE, D = t1/t2

SINGLE PULSE
0.01
1.0E 05

1.0E 04

1.0E 03

1.0E 02

1.0E 01

RJC(t) = r(t) RJC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RJC(t)

1.0E+00

1.0E+01

t, TIME (s)

Figure 8. Thermal Response

Motorola TMOS Power MOSFET Transistor Device Data

MGP20N40CL
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

SEATING
PLANE

C
T

Q
1 2 3

STYLE 9:
PIN 1.
2.
3.
4.

H
K
Z
L

G
D
N

GATE
COLLECTOR
EMITTER
COLLECTOR

DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045

0.080

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15

2.04

CASE 221A09
ISSUE Z

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
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Motorola TMOS Power MOSFET Transistor

Device Data

MGP20N40CL/D

This datasheet has been download from:

www.datasheetcatalog.com
Datasheets for electronics components.