# (c) Silvaco Inc.

, 2013
go athena
# GaAs MESFET fabrication and analysis using DevEdit
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init

x
x
x
x
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x
x

loc=-1.5
loc=-.7
loc=-.5
loc=0.0
loc=0.5
loc=0.7
loc=1.5

spac=0.2
spac=0.1
spac=0.05
spac=0.1
spac=0.05
spac=0.1
spac=0.2

y loc=0.00 spac=0.02
y loc=2.00 spac=0.5
gaas c.beryllium=1.0e13 orient=100 space.mult=1

implant beryllium energy=100 dose=2e11

implant silicon energy=100 dose=1e12
diffus time=10 temp=850
# deposit and pattern gate metal
deposit titanium thick=.3 divisions=10
etch titanium right p1.x=0.5
etch titanium left p1.x=-0.5
deposit oxide thick=0.35 divisions=8
etch oxide thick=.4
# regrid before implant
go devedit
base.mesh height=0.08 width=0.08
bound.cond apply=false max.ratio=300
bound.cond when=automatic max.slope=28 rnd.unit=0.001 line.straightening=2 \
align.points
constr.mesh max.angle=90 max.ratio=300 max.height=1 max.width=1 \
min.height=0.0001 min.width=0.0001
constr.mesh type=Semiconductor default
constr.mesh type=Insulator default
constr.mesh type=Metal default
imp.refine min.spacing=0.02
imp.refine imp="net doping" sensitivity=1
mesh
go athena
# perform source/drain implant
implant silicon energy=50 dose=1e13
# regrid to reduce grid in un-implanted areas
go devedit
base.mesh height=0.4 width=0.4
bound.cond apply=false max.ratio=300

bound.cond when=automatic max.slope=28 rnd.unit=0.001 line.straightening=2 \

align.points
constr.mesh max.angle=90 max.ratio=300 max.height=1 max.width=1 \
min.height=0.0001 min.width=0.0001
constr.mesh type=Semiconductor default
constr.mesh type=Insulator default max.angle=180
constr.mesh type=Metal default
imp.refine min.spacing=0.03
imp.refine imp="net doping" sensitivity=.5
mesh
go athena
diff time=10 temp=850
# deposit ohmic metal
deposit aluminum thick=.2 divisions=4
etch aluminum
start x=-1 y=10
etch cont
x=-1 y=-10
etch cont
x=1 y=-10
etch done
x=1 y=10
#
electrode name=source x=-1.4
electrode name=drain x=1.4
electrode name=gate x=0.0
# regrid to resolve new junction position
go devedit
base.mesh height=0.1 width=0.1
bound.cond apply=false max.ratio=300
bound.cond when=automatic max.slope=28 rnd.unit=0.001 line.straightening=2 \
align.points
constr.mesh max.angle=90 max.ratio=300 max.height=1 max.width=1 \
min.height=0.0001 min.width=0.0001
constr.mesh type=Semiconductor default
constr.mesh type=Insulator default max.angle=180
constr.mesh type=Metal default
imp.refine min.spacing=0.03
imp.refine imp="net doping" sensitivity=1
mesh
structure outfile=mesfetex01_0.str
tonyplot mesfetex01_0.str -set mesfetex01_0.set
go atlas
# set work function for gate
contact name=gate work=4.87
# specify lifetimes in GaAs and models
material material=GaAS taun0=1.e-8 taup0=1.e-8
models conmob fldmob srh optr print
# Begin solution

method newton trap

solve vdrain=0.1
# Ramp gate and log results
log
outf=mesfetex01.log master
solve vgate=0.0 vstep=-0.1 vfinal=-3 name=gate
extract init infile="mesfetex01.log"
extract name="vt" (xintercept(maxslope(curve((v."gate"),(i."drain")))))
save outfile=mesfetex01_1.str
tonyplot mesfetex01.log
quit