25-09-2012

Indian Institute of Space Science and Technology

Course : Semiconductor Device (Code:AV212 )
3rdSemester B-Tech in Avionics Engineering

Lecture :3&4
P-N Junction
Course Instructor
Dr. Seena V
Assistant Professor
Department of Avionics Office : R-142
E-mail : seena.v@iist.ac.in

P-N Junction
2

9/25/2012

25-09-2012

P-N Junction
3

9/25/2012

P-N Junction-Under Equilibrium

4

Vbi Fp Fn

9/25/2012

25-09-2012

P-N Junction-Under Equilibrium

5

Eip E F

kT
p p ni e

qFp Eip EF

Vbi Fp Fn

qFn EF Ein

kT p p kT nn
ln
ln

q ni q ni

kT nn . p p
ln
q ni 2

q
Fp
kT
p p ni e

EF Ein

nn ni e kT

qF
n

kT
nn ni e

kT p p
Fp
ln

q ni

Fn

kT nn
ln
q ni

Vbi

kT N A. N D
ln
q ni 2

The built-in potential barrier is a weak function of the doping concentrations.

9/25/2012

P-N Junction-Under Equilibrium

6

Vbi

kT nn . p p
ln

q ni 2

p p .n p ni 2 ; nn . pn ni 2
Vbi

kT p p
ln

q pn

pp

qVbi

n
n e
pn n p

kT

9/25/2012

25-09-2012

P-N Junction-Under Equilibrium

7

Depletion approximation
Career depletion within space charge region
Charge neutrality outside space charge

Dipole about the junction must have an equal

number of charges on either side

qAx p0 N A qAxn0 N D
Poisson's equation : Relates the gradient of the electric
field to the local space charge at any point x

d q

p n ND
NA
dx

9/25/2012

P-N Junction-Under Equilibrium

8

d q
N

p n ND
A
dx

d q q
ND ND
dx

0 x xn 0

d q q
NA NA
dx

x p0 x 0

dx

x p0 x 0

x p0

0
0

q
d N A

q
d N D

Electric field

xn 0

dx

0 x xn 0

q
q
0 N A x p 0 N D xn 0

9/25/2012

25-09-2012

P-N Junction-Under Equilibrium

9

Electric field

( x)

dV ( x )
dx

xn 0

Vbi

( x )dx

x p0

1
1q
1q
Vbi W 0
N A x p 0W
N D xn 0W
2
2
2

x p0 N A xn0 N D ;W x p0 xn0 ;

Vbi

xn 0

WN A
(N A ND )

Potential

1 q N AND
W2
2 (NA ND)

2 Vbi
W
q

1/2

1
1

N
N
A
D

9/25/2012

P-N Junction-Under Equilibrium

10

Electric field

1/2

2 Vbi 1
1
W

q
N
N

A
D

x p0

WN D
2 Vbi

( N A N D ) q

1/2

ND

N
(
N

N
)

A A
D

The space charge/depletion region extends

deep into the side with the lighter doping

q
q
0 N A x p 0 N D xn 0

1 q N AN D
Vbi
W2
2 (N A N D )

Potential

1/2

2 Vbi 1
1
W

q N A N D

9/25/2012

25-09-2012

Current flow in P-N Junction

11

9/25/2012

Current flow in P-N Junction

12

9/25/2012

25-09-2012

Current flow in P-N Junction

13

The diffusion current : Composed of majority carrier electrons on the n side crossing the
potential energy barrier to diffuse to the p side, and holes crossing their barrier from p to n
The drift current : The minority carriers reaching the space charge region drift due to the
electric field. Relatively insensitive to the height of the potential barrier. Drift current is
limited not by how fast carriers are swept down the barrier, but rather how often.
The supply of minority carriers : Thermal excitation
of EHPs.
The resulting current due to drift of generated
carriers across the junction : generation current
At equilibrium, Ip(diff.)=Ip(drift) & In(diff.)=In(drift)
I I (diff .) I ( gen ) 0 for V 0
qV

I I 0 e kT 1 here, I 0 I ( gen )