Faculty of Information Engineering & Technology

Electrical & Electronics Department

Associate Prof. Soliman Mahmoud
Course: Electronic Circuits [ELCT 604]
Sheet -7

Output Stages

Prob.1:
a) For the emitter follower output stage shown below, find the value of R1 for maximum
efficiency and find the value of that efficiency. VCC = VEE =2.5V, VCE(sat)=0.2V,
RL=10k , VBE(on)=0.7V.
b) The load resistance RL is replaced with a capacitor of 100pF. If the input voltage
suddenly drops from 2.5V to -2.5V, explain what happens at the output and accurately
sketch the output voltage as a function of time, specifying its initial and final values and
time interval.

Prob.2:
(a) For the shown Emitter follower shown, assume VCC=12V, VBE,ON=0.7V,
VCE,sat=0.2V, IQ2 =I=5mA, RL=650 and =100. Determine the value of R.
(b) Determine the critical value of the load resistance to avoid clipping (distortion).
(c) Calculate the peak to peak output voltage swing if RL=650 .
(d) Calculate the peak to peak output voltage swing and the conversion efficiency if
RL=2.5K
(e) Use PSPICE to plot the transfer function of the emitter follower for the values in
part(a)
Note: The PSPICE model of the diode and BJT:
.MODEL D1N914 D(IS=100E-15 RS=16 BV=100 IBV=100E-15)
.MODEL Q NPN(BF=100 VA=100)

Prob.3:
A push-pull follower is shown which uses an NPN BJT and a p-channel MOSFET. In this
problem, ignore the bulk effect (i.e. threshold voltage of the MOS transistors is
independent of the bulk voltage), the channel length modulation, and the Early voltage.
The parameters for the NPN BJT are F = 100, Ios = 10fA and VT (thermal voltage) =
25.9mV. The model parameters for the PMOS are KP\ = p Cox=50 A/V2 and VT
(Threshold voltage) =-0.7V.
(a.) Find the value of the dc batteries, V1 and V2, which will cause 100 A to flow in Q1
and M2 when the dc value of vIN = 0VDC.
(b.) Find the small signal input resistance, output resistance and voltage gain when the dc
value of vIN = 0V DC.

Prob.4:
Six versions of a source follower are shown below. Assume that nCOx = 2 pCOx, P =
2 N, all W/L ratios of all devices are equal, and that all bias currents in each device are
equal. Neglect bulk effects in this problem and assume no external load resistor.
Identify which circuit or circuits have the following characteristics:
(a.) highest small-signal voltage gain,
(b.) lowest small-signal voltage gain,
(c.) the highest output resistance,
(d.) the lowest output resistance,
(e.) the highest vout(max) and
(f.) the lowest vout(max).

Prob.5:
(a) Design an active current source Ibias for the Class AB amplifier shown in order to
provide the diodes of biasing currents of 5.67mA. Assume VCC=12V, VBE,on=0.7
and RL=50 .
(b) Use PSPICE to plot the transfer characteristic and the instantaneous iCn, iCp and iL
for v I = 5 sin(2000t ) V.
Notes:
(I) The PSPICE model of the diode and BJT:

.MODEL DMOD D(IS=100E-15 BV=100)

.MODEL Qn NPN(IS= 1E-14 BF=50 VJE=0.7)
.MODEL Qp PNP(IS= 1E-14 BF=50 VJE=0.7)
.MODEL Qp1 PNN(IS= 1E-14 BF=100 VJE=0.7); TRANSISTORS USED TO
REALIZE Ibias.
(ii)
In this problem, you need to do DC and transient analysis
DC analysis to plot the transfer function: .DC vin -12 12 0.001
Transient analysis: .Tran 5U 2MS
; 2 PERIODES FROM SINWAVE.

Prob.6:
(a) Design a VBE multiplier for class AB amplifier shown in order to provide the
biasing current Ibias=5.67mA.Assume VCC=12V, VBE=0.7 V, and RL=50 . Assume
a minimum current of the VBE multiplier circuit is 1mA and the DC biasing
current of Qn and Qp IC=2mA .
(b) Use PSPICE to plot the transfer characteristic and the instantaneous iCn, iCp and iL
for v I = 5 sin(2000t ) V.
Notes:
(a)The PSPICE model of the diode and BJT:

.MODEL Q NPN(IS= 1E-14 BF=100 VJE=0.7)

.MODEL Qn NPN(IS= 1E-14 BF=50 VJE=0.7)
.MODEL Qp PNP(IS= 1E-14 BF=50 VJE=0.7)
.MODEL Qp1 PNN(IS= 1E-14 BF=100 VJE=0.7); TRANSISTORS USED TO
REALIZE Ibias.
(a) In this problem, you need to do DC and transient analysis
DC analysis to plot the transfer function: .DC vin -12 12 0.001
Transient analysis: .Tran 5U 2MS
; 2 PERIODES FROM SINWAVE.