ABSTRACT:

This paper presents a geometry-physics based compact model for MOSFET-like CNTFET.
This model is developed in terms of basic geometry parameters like chiral index, doping
concentration, no. of tubes, pitch etc. The non-idealities modeled in the design are the
quantum tunneling and the acoustical/optical phonon scattering in the channel region and
the screening effect by parallel CNTs. The I-V characteristics have been obtained over the
entire region of operation for large signal (digital) application purposes. The CNTFET
parameters have been optimized for an operating frequency of 100MHz for channel length
of 32nm with objective function of Iratio to be maximized. The optimization algorithm in the
design is Particle Swarm Optimization which is evolutionary based optimization technique.
The optimal Nd and (n, m) are obtained with desired pitch and number of tubes.

1. INTRODUCTION:
As the scaling of conventional MOS devices is never ending, the problems associated
with scaling of silicon based devices are highly visible. CNTFETS are undoubtedly the ideal
successors of conventional MOS devices. Modelling of CNTFET require accurate treatment
of quantum tunnelling and the non-idealities of the device. Several approaches have been
made for accurate modeling of the device. The use of Schrdinger- Poisson based solver was
one of such approaches but it lacks quantum treatment of the device.[2] NEGF treatment
though solves the problem of quantum modelling but the numerical modelling tasks become
more and more complicated. Wigner formalism of scattering effect along with Greens
function provided more accurate model of the FET.[5] the complication in deriving the
model are getting more and more intense.[7] . The need of accurate model for CNTFET is
still an issue.
This paper presents a simpler way to model the CNTFET using its energy profile. The
E-k curve of CNT derived from quantum physics is used as the base for the model.[8] The
energy level change is then used to compute the device transport equation. [9] the
capacitance extraction is done using device geometry and electrostatics physics. [10] The
acoustic / optical phonon effects are modeled in the design [12]. The model is designed in
terms of primary design parameters and the I-V characteristics is obtained. The device

parameters are optimized for a specific frequency of operation. Commonly used

optimization algorithms are gradient-based methods but it has sevaeral limitations like
initial guess requirement, singularities in objective functions, etc. [14-15]. Genetic algorithm
does not suffer from the problems and can be used for parameter optimization. [16].
Compared to GA, the PSO is reported to be more efficient has proved to be more efficient in
parameter optimization [17-18]. The paper uses PSO algorithm to optimize the parameters of
the FET for operating frequency of 100 MHz with objective of high mobility and low
capacitance value for channel length of 32nm.

2. CNT INTERCONNECTS:
2.1 CARBON NANOTUBES
CNT is a tubular form of carbon with diameter as small as 1nm. The length of the tube ranges
from a few nm to m. A CNT is characterized by its Chiral Vector: Ch = n 1 + m 2, Chiral Angle with respect to the zigzag axis , where 1 and 2 are lattice basis vectors of
graphene sheet and the chiral angle represents the angle that the axis of rolling up sheet forms
with one of the basis vectors. On the basis of chirality CNT can be classified as, zig zag ( =
0), Chiral (0 < < 30), or armchair (with = 30) Figure 1 shows the 3-D structure of CNT
for chiral index (13, 0) with N = 1000 electrons. The diameter of the tube can be achieved by
following equation
3
Dcnt= n2 +nm +m2

Figure 1: 3D Plot of CNT of chiral index (13, 0) in MATLAB

The band structure of the carbon nanotube can be obtained by zone-folding the
band structure of the graphene sheet.[8-10].The E-k plot (Figure 2)developed using
this theory shows that conduction band and valence band consists of several
subband regions with ith subband minima occurring at energy level E i,min = i*Eg/2,
[12] where Eg is energy gap of the tube and is given by
Eg

0.82
Dcnt

The E-k relation at subband minima[21] can be described by the equation

)=Vpp 1+ 2cos k ( a1a2 ) +2 cos k ( a1
) +2 cos k ( a2 )
E(K

Figure 2: Momentum versus Energy

2.2 Carrier concentration in CNT Channel

The carrier concentration of the CNT channel is the product of FermiDirac
distribution * Density of state, f(E) *D(E), over the carrier energy,i.e.,

ni=

Ec

D(E)
[ f ( Ei ) ] dE ,
2

The density of states is found to be maximum only at subband minima of the CNT
channel and is extremely low over other subband region (Figure 3). The nanotube
density of states [13] at subband minima sbbd is given by

D ( E ) =

p=1

8
3 bVpp

|EEo|

( EEo )2 sbbd [ p ]

H (|EEo|sbbd [ p ] )

Here H(E) is heaviside unit function and E0 is the mid-gap energy of the intrinsic
region

Figure 3: Density of states versus Energy

Carrier concentration for Pth subband in CNTFET is given by,

n ( V , sbbd [ p ] ) =

8e
E
1
dE

3 bVpp sbbd [ p ] E2sbbd [ p ]2 1+ exp EV

KbT

where b is the carboncarbon distance equal to 0.142 nm, and

Vpp

is the carboncarbon bonding energy estimated at 3.033 eV,

The partial solutions of the above equation in different cases[15] has been shown in
figure 4. The first case include low bias application across the channel V < sbbd[p],
while the second case considers V > sbbd[p] and then carrier concentration equation is
modelled for both situation (a)at low energy, and (b) at higher energy level. Finally, a

complete solution is obtained using smoothing function(fsmo) as shown in figure 5. The

final carrier concentration expression is
n
( 2 a+n2 b )(1f smo )
n i n1 f smo +

Figure 4: Linear channel Density versus voltage bias

Figure 5: Linear charge density versus temperature

3. Modelling the CNTFET

3.1 Band Diagram of CNTFET

The band diagram of a material plays an important role in deciding the behaviour of
any device. The band diagram can be designed by the help of the knowledge about
Fermi level. The Fermi Dirac distribution lets you know about the energy at which the
probability of finding a electron in conduction band becomes equal to the probability of
finding a hole in valence band. The Fermi level for both the n-type as well as p-type
semiconductor vary vastly in band diagram. The Fermi dirac function (figure 6) is
written as follow:
1

f ()=
e

( )
(kT )

+1

The equation above clearly tells us that the Fermi dirac distribution depends on temperature
& mobility the below diagram shows how temperature affects it. The Fermi level of n-type
& p-type(figure 7) can also be modelled keeping into consideration of the fact that the Fermi
level for n-type semiconductor moves towards the conduction band & known as donor
energy level, whereas the Fermi level for p-type semiconductor moves towards the valence
band and is known as the acceptor energy level.

Figure 6: Fermi Dirac distribution for different Temperature

Figure 7: Fermi level for N and P Type Si

The Band diagram of the CNTFET has been achieved here we can change
the structure of the Band Diagram by the application of gate & drain voltages. Here
an interesting fact we are able to witness regarding the band structure when we are
increasing the gate voltage & keeping the same drain voltage it decreases the
conduction band structure of channel.

3.2 Circuit model of the CNTFET

Figure 8: CNTFET geometry

The quasi-1D CNTFET can be modelled by the model shown above consisting of a
semiconducting source, a semiconducting drain, a metallic gate, a high K dielectric the
channel is made up of CNT (Carbon nanotube). The movement of electrons from source to
drain is being done by means of Ballistic Transport by which electrons where not facing
any energy losses from the walls of the channel. As we are dealing in the nanoscale region
the bands of the device becomes discrete in nature. The bands become discretised and are
termed as sub bands. The behaviour of these sub bands will decide the amount of current
flowing through our device. The bands are broken into sub band minima and sub band
maxima. The total current flowing through the device can be calculated by simply adding
all the sub bands together.

Figure 9: Large Signal Model of CNFET

Figure 10: Effect of gate voltage on CNFET subband in terms of

Qcnt and Cins for Current Calculation

The current flowing through the device is dependent on the energy band of the
device. This in turn is modulated by the gate voltage of the device. Since the current is
constant throughout the channel it can be calculated at the top of the energy barrier which
can also be considered as the beginning of the channel. Here for calculating the total
amount of current we have to make use of the large signal equivalent of it.(Fig 9).A flat
band voltage Vfb to consider the difference between the gate metal work function & the
nanotube electron affinity. The movements of electron has been modelled here as follow.
The electrons coming from the source fill up the +k states of the Fermi level and the
electron coming from the drain fill up the k states of the Fermi level these two make up
for the QCNT. (Fig 10). In order to model the current flowing through the device we need
to first out Qcnt in terms of sub band, Fermi level & Vcnt. Then we will be able to find
out Id. Then at last we will find out the gate voltage corresponding to Vcnt.
To find out the first part the total charge of each sub band can be thought as the
each charge contributed by source and drain.
The total current for each sub band can be calculated as

Vcnt , sisbbd[ p ]

1+ expKbT
, Disbbd [ p ]
ln ( )ln ( 1+expVcnt
)
KbT
+
4 eKbT
I=

h p =1

To start the calculation for I we need to know about s. Here s can be calculated
as below:
s =Vg

Qcnt
Cins

where Cins is known as

Cins=

2 or
h
cosh1
r

The quantum capacitance is also necessary for calculating the exact current
flowing through our device which is given as

(Vscf Vs)
Csq=q

n+

(Vscf Vd)
Cdq=q

Using all these equations we can model the CNTFET with all its necessary parameters
in MATLAB with accuracy.

5. Optimization
Using the optimization technique we can choose the best result for the parameters available
to us for modelling the CNTFET. There are various optimization techniques available to
optimize our devices in nanoscale region, out of them all here we have opted for ANT

colony and PARTICLE SWARM optimization technique which falls under Generic
optimization technique. The generic optimization is inspired by evolutionary biology.
Generic Optimization simply implemented as a computer simulation. It is highly advisable
because it solves problems with multiple solutions and is easily transferrable to any model.
There are two types of genetic optimization models with each having its own advantage.
The ANT colony optimization is the first approach. This optimization technique
depends on the pheromone which discharged by the ANTs in there colony. The whole idea of
an ANT colony on how they can find the shortest path for their food can be readily
implemented on real life encounters. The ANT which tracks the path finds this out by the
density of the pheromone which remains while it retracts from the same path. Since the
pheromone tends to evaporate with time, the ANT chooses that path in which the pheromone
density is high. It has the advantage of distributed computing, it is robust and it can adapt to
the system in which it is applied in real time.
The second approach is the PARTICLE SWARM approach which is inspired by
bird flocking. It is an advanced form of genetic algorithm. It is easier to implement than
Genetic approach. It depends on the ability of the birds to find food at a certain area. Each
bird returns a particular value which shows the distance of that bird from the food. The
value which is best for the group is taken first and a second best value is considered. The
algorithm return backs two values in which the first one is known as best value and the
second one is known as the second best value. Depending upon these two values the
algorithm can find out the shortest path necessary for finding the food for the birds. It has
numerous advantages like in ANT colony the entire population moves as a group to the
destination but in PARTICLE SWARM the population moves towards the best solution.

6. Results and Discussion

The energy band diagram of CNTFET for chiral index (13,0) have been obtained (figure 11)
with fermi level set at 0eV. Figure 11 shows only first subband minima plot of CNT in
CNTFET and the variation of these bands with application of drain and source voltage has
been studied which shows that the drain voltage application lowers the Fermi level of drain
side by the same amount.

Figure 11: Energy Band Diagram Variation

at different S-D bias(Vds)

. Figure 12: Change in Energy Band Diagram with gate voltage

variation

The effect of application of Gate to Drain Voltage on Enegry band Diagram of

device has been studied (figure 12) which shows that as we keep on increasing our gate to
source voltage the Fermi level of the channel gets reduced by some amount (i.e. Vcnt) .
The mobility of the CNTFET devive has been found out and the result shows that
the mobility maxima occurs at subband minima of the CNT channel because of high
carrier density presence at that states.(figure 13). The quantum capacitance of the device
is calculated from the carrier concentration and the graph is plotted against applied
potential.(figure 14).

Fig. 13 mobility verses energy

Fig.14 Quantum capacitance for the first sub band minima as function of V
The insulator capacitance of the device has been obtained in COMSOL
multiphysics using its geometry and the results for different no. of tubes and with
various pitch distance has been recorded in the table which shows that Insulator
capacitance Cins increases as the number of tubes increases in our device and
as we are going on increasing the pitch for our device the insulator capacitance
of the device decreases gradually.

Fig. 15 COMSOL Image of CNTFET with three tubes.

Table 1: Variation of Cins With number of tubes nt at different Pitch =10 nm.
Nt
(Number of Tubes)

Cins(pF/m)
( Insulator Capacitance)

138

342

670

968

Table 2: Variation of Cins with Pitch at nt = 3

Pitch (n,m)

Cins (pF/m)

734

699

10

670

Finally the current model has been obtained and the results show that the I-V
characteristics of this device are similar to conventional MOSFET devices. Now
optimisation of the parameters has been done with specification Lt = 32 nm , nt
= 3 , pitch = 8 nm. The optimization with aim to maximize the current ratio for
our device with optimizing the parameters present in our device has been
performed and the result shows that Ioff Minima is observed for (n,m) = (16,0)
The optimized Nd obtained is 1e20(cm-3). So we conclude that Modelling of the
device based on device physics predicts its characteristics to a good extent and
Parameter extraction using optimization algorithm which converges the result
within the desired range.

Figure 17: Drain current verses the gate to source voltage with constant
VDS

Figure 18: drain current verses drain to source voltage at constant V GS

CONCLUSION:
The conclusion of this entire work is that a good and robust model of CNTFET has
been achieved with optimized parameters. The parameter which has been
considered has been optimized in order to get maximum performance of the
device. The main objective of this optimization process was to achieve a good I ON
by IOFF ratio which has been achieved as the I OFF has been minimized.
As a compact model, good agreement with the fabricated device on both dc and
ac

characteristics

can

be

demonstrated.

Further

improvements

to

this

implemented model, in order to improve the accuracy and improve run time can
be done by using a more accurate band structure model or by the considerations
of more parameters which have been ignored in the models. One such parameter
is the diffusion at the source/drain junctions are ignored.
Regarding future work after optimizing these parameters we can model this
device using its parameter. So we can end up specifying a design library
especially dedicated to our device and design standards.