DEPARTMENT OF ELECTRONICS AND COMPUTER ENGINEERING

INDIAN INSTITUTE OF TECHNOLOGY ROORKEE

EC -102

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Problem Sheet VI
(FET Operation and Biasing)

Autumn 2007-08

What are the major differences between the collector characteristics of a CE-BJT transistor and the drain
characteristics of a CS-JFET? Compare the units of each axis and the controlling variable. How does IC
react to increasing levels of IB versus changes in ID to increasing negative values of VGS? How does the
spacing between steps of IB compare to the spacing between the steps of VGS? What will be its effect on the
amplification of an ac signal? Compare VCE,sat to VP in defining the nonlinear region at low levels of output
voltage.
Given IDSS =12 mA and VP = -4V, sketch the transfer characteristics for the JFET on a graph paper. From
the transfer characteristics, sketch the drain characteristics on the same graph.
Given a Q-point of IDQ = 3 mA and VGS = -3V, determine IDSS of the JFET if VP = -6V.
Given a depletion type MOSFET with IDSS = 6 mA and VP = -3V, determine the drain current at VGS = -1,
0, 1, 2 V. Compare the difference in the current levels between -1 and 0 V with the difference between 1
and 2 V. In the positive VGS region, does the drain current increase at significantly higher rate than for
negative values? Does the ID curve become more and more vertical with increasing positive values of VGS?
Is there a linear or a nonlinear relationship between ID and VGS? Explain.
Plot the transfer characteristics of an enhancement mode MOSFET for which ID = 4mA at VGS = 6V. The
FET has a VT = 4V. Determine the drain current for VGS = 2, 5, and 10V.
For the fixed bias circuit shown in Fig. 1, determine IDQ, VGSQ, VDSQ, VD, VG, and VS using a purely
mathematical approach.
Solve the circuit of Fig. 1 using a graphical approach and compare your results with those obtained in Q.6.
For the self-bias configuration shown in Fig. 2, (i) Sketch the transfer characteristic on a graph paper. (ii)
Write the network equation and superpose it on the transfer characteristics, (iii) Determine IDQ, VGSQ from
the graph and (iv) Calculate VDSQ, VD, VG, and VS.
For the circuit of Fig. 2, determine IDQ, VGSQ, and VDSQ using a purely mathematical approach and compare
your results with those obtained in Q. 8.
For the network of Fig.3, (i) sketch the transfer characteristics on a graph paper. (ii) Write the network
equation and superpose it on the transfer characteristics, (iii) Determine IDQ, VGSQ from the graph and (iv)
Calculate VDSQ, VD, VG, and VS.
Calculate IDQ, VGSQ, VDSQ, VD, VG, and VS for the network of Fig. 3 using a purely mathematical approach
and compare your results with those obtained in Q. 10.
For the circuit shown in Fig. 4, (i) sketch the transfer characteristics on a graph paper. (ii) Write the
network equation and superpose it on the transfer characteristics, (iii) Determine IDQ, VGSQ from the graph
and (iv) Calculate VDSQ, VD, VG, and VS.
Calculate IDQ, VGSQ, VDSQ, VD, VG, and VS for the network of Fig. 4 using a purely mathematical approach
and compare your results with those obtained in Q. 12.
For the circuit shown in Fig. 5, (i) sketch the transfer characteristics on a graph paper. (ii) Write the
network equation and superpose it on the transfer characteristics, (iii) Determine IDQ, VGSQ from the graph
and (iv) Calculate VDSQ, VD, VG, and VS.
Calculate IDQ, VGSQ, VDSQ, VD, VG, and VS for the network of Fig. 5 using a purely mathematical approach
and compare your results with those obtained in Q. 14.
For the circuit shown in Fig. 6, (i) sketch the transfer characteristics on a graph paper. (ii) Write the
network equation and superpose it on the transfer characteristics, (iii) Determine IDQ, VGSQ from the graph
and (iv) Calculate VDSQ, VD, VG, and VS. It is given that the drain current is 5 mA when VGS = 7V.
Calculate IDQ, VGSQ, VDSQ, VD, VG, and VS for the network of Fig. 6 using a purely mathematical approach
and compare your results with those obtained in Q. 15.
For the circuit shown in Fig. 7, determine VG, VGSQ, IDQ, IE, IB, VD, and VC.
1

16V

18V

20 V

2.2 k

1.5 k

2.2 k

1 M

IDSS = 4.5 mA
VP = - 5 V

IDSS = 10 mA
VP = - 4 V

IDSS = 10 mA
VP = - 4.5 V
1 M

680

750

3V

Fig. 3

Fig. 2

Fig. 1

14 V

20V
910 k

1.2 k

2.2 k

IDSS = 6 mA
VP = - 4 V

IDSS = 10 mA
VP = - 3.5 V
110
k

1.1 k

430

1 M

Fig. 5

Fig. 4

20 V
22 V
1.1 k

330 k

1.2 k
91 k

= 160

1 M

VGS(Th) = 4 V
510

Fig. 6

IDSS = 6 mA
VP = - 6 V
18 k

1.2 k

Fig. 7