March 1996

NDP6060 / NDB6060
N-Channel Enhancement Mode Field Effect Transistor
General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited
for low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line power
loss, and resistance to transients are needed.

48A, 60V. RDS(ON) = 0.025 @ VGS=10V.

Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.

________________________________________________________________________________

Absolute Maximum Ratings

T C = 25C unless otherwise noted

Symbol

Parameter

NDP6060

VDSS

Drain-Source Voltage

60

VDGR

Drain-Gate Voltage (RGS < 1 M)

60

VGSS

Gate-Source Voltage - Continuous

20

ID

Drain Current

- Nonrepetitive (tP < 50 s)

- Continuous

- Continuous

TC=100 C

Total Power Dissipation @ TC = 25C

Derate above 25C

TJ,TSTG

Operating and Storage Temperature Range

TL

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

1997 Fairchild Semiconductor Corporation

Units

40

Tc=25oC

- Pulsed
PD

NDB6060

48

32
144
100

0.67

W/C

-65 to 175

275

NDP6060 Rev. B1 / NDB6060 Rev. C

Electrical Characteristics (TC = 25C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

200

mJ

48

250

DRAIN-SOURCE AVALANCHE RATINGS (Note 1)

WDSS

Single Pulse Drain-Source Avalanche

Energy

VDD = 25 V, ID = 48 A

IAR

Maximum Drain-Source Avalanche Current

OFF CHARACTERISTICS
BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 A

IDSS

Zero Gate Voltage Drain Current

VDS = 60 V, VGS = 0 V

60

mA

IGSSF

Gate - Body Leakage, Forward

VGS = 20 V, VDS = 0 V

100

nA

IGSSR

Gate - Body Leakage, Reverse

VGS = -20 V, VDS = 0 V

-100

nA

TJ = 125C

ON CHARACTERISTICS (Note 1)
VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 A

TJ = 125C

RDS(ON)

Static Drain-Source On-Resistance

2.9

1.4

2.3

3.6

0.02

0.025

0.032

0.04

VGS = 10 V, ID = 24 A
TJ = 125C

ID(on)

On-State Drain Current

VGS = 10 V, VDS = 10 V

48

gFS

Forward Transconductance

VDS = 10 V, ID = 24 A

10

19

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25 V, VGS = 0 V,
f = 1.0 MHz

1190

1800

pF

475

800

pF

150

400

pF

SWITCHING CHARACTERISTICS (Note 1)

tD(on)

Turn - On Delay Time

tr

Turn - On Rise Time

tD(off)

Turn - Off Delay Time

tf

Turn - Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD = 30 V, ID = 48 A,
VGS = 10 V, RGEN = 7.5

VDS = 48 V,
ID = 48 A, VGS = 10V

10

20

nS

145

300

nS

28

60

nS

77

150

nS

39

70

nC

7.6

nC

22

nC

NDP6060 Rev. B1 / NDB6060 Rev. C

Electrical Characteristics (TC = 25C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

DRAIN-SOURCE DIODE CHARACTERISTICS

IS

Maximum Continuos Drain-Source Diode Forward Current

48

ISM

Maximum Pulsed Drain-Source Diode Forward Current

144

VSD

Drain-Source Diode Forward Voltage

0.9

1.3

0.8

1.2

35

87

140

ns

3.6

VGS = 0 V, IS = 24 A (Note 1)
TJ = 125C

trr

Reverse Recovery Time

Irr

Reverse Recovery Current

VGS = 0 V, IF = 48 A,
dIF/dt = 100 A/s

THERMAL CHARACTERISTICS
RJC

Thermal Resistance, Junction-to-Case

1.5

C/W

RJA

Thermal Resistance, Junction-to-Ambient

62.5

C/W

Note:
1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.

NDP6060 Rev. B1 / NDB6060 Rev. C

Typical Electrical Characteristics

100

12

10

R DS(on), NORMALIZED

8.0
60

7.0
40

6.0
20

5.0
0

1
V

DS

2
3
4
, DRAIN-SOURCE VOLTAGE (V)

9.0
10

1.2

12

20

0.8

80

100

V GS = 10V
R DS(on) , NORMALIZED

V GS = 10V

1.5

1.25

0.75

0.5
-50

40
60
I D , DRAIN CURRENT (A)

2.5

I D = 24A

-25

25
50
75
100
125
TJ , JUNCTION TEMPERATURE (C)

150

DRAIN-SOURCE ON-RESISTANCE

1.75

20

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current

R DS(ON), NORMALIZED

8.0
1.4

Figure 1. On-Region Characteristics

DRAIN-SOURCE ON-RESISTANCE

7.0

1.6

0.6

TJ = 125C

1.5

25C
1

-55C
0.5

175

20

40

60

80

100

I D , DRAIN CURRENT (A)

Figure 3. On-Resistance Variation

with Temperature

Figure 4. On-Resistance Variation with Drain

Current and Temperature

1.2

T = -55C
J

V DS = 10V
50

25C
V GS(th), NORMALIZED

125C

40

30

20

10

0
2

V GS , GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

10

GATE-SOURCE THRESHOLD VOLTAGE

60

I D , DRAIN CURRENT (A)

VGS = 6.0V

1.8

9.0

80

DRAIN-SOURCE ON-RESISTANCE

I D , DRAIN-SOURCE CURRENT (A)

VGS = 20V

V DS = V GS
I D = 250A

1.1
1
0.9
0.8
0.7
0.6
0.5
-50

-25

25
50
75
100
125
T , JUNCTION TEMPERATURE (C)

150

175

Figure 6. Gate Threshold Variation with

Temperature

NDP6060 Rev. B1 / NDB6060 Rev. C

Typical Electrical Characteristics (continued)

60

V GS = 0V

I D = 250A
10
1.1

I S , REVERSE DRAIN CURRENT (A)

BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE

1.15

1.05

0.95

0.9
-50

-25

0
T

25
50
75
100
125
, JUNCTION TEMPERATURE (C)

150

-55C

0.01

0.001

0.4

0.6

0.8

1.2

1.4

V SD , BODY DIODE FORWARD VOLTAGE (V)

Figure 8. Body Diode Forward Voltage Variation

with Current and Temperature

3000

20

I D = 48A
V GS , GATE-SOURCE VOLTAGE (V)

2000

Ciss
1000

Coss

500
300

f = 1 MHz
200

V GS = 0 V
Crss

V DS = 12V
48V

15

24V
10

100

0
1

3
V

DS

10

20

30

50

20

, DRAIN TO SOURCE VOLTAGE (V)

Figure 9. Capacitance Characteristics

t on
t d(on)

t d(off)

tf

V OUT

VO U T
10%

R GEN

80

90%

90%

60

to f f
tr

RL

V IN

40
Q g , GATE CHARGE (nC)

Figure 10. Gate Charge Characteristics

VDD

VGS

25C

0.1

0.0001
0.2

175

Figure 7. Breakdown Voltage Variation with

Temperature

CAPACITANCE (pF)

T J = 125C

10%
INVERTED

DUT

90%

V IN
S

50%

50%
10%
PULSE W IDTH

Figure 11. Switching Test Circuit

Figure 12. Switching Waveforms

NDP6060 Rev. B1 / NDB6060 Rev. C

Typical Electrical Characteristics (continued)

300

30

200

TJ = -55C
I D , DRAIN CURRENT (A)

24

100

25C
18

125C
12

RD

S(

Lim
N)

10

it
10

50

1m
20

10

10

SINGLE PULSE

ms

10
0m
DC s

V GS = 10V
RJC = 1.5 o C/W

T C = 25C

FS

, TRANSCONDUCTANCE (SIEMENS)

V DS =10V

0
0

10

20
30
I D , DRAIN CURRENT (A)

40

50

10

20

30

60

100

VDS , DRAIN-SOURCE VOLTAGE (V)

Figure 13. Transconductance Variation with Drain

Current and Temperature

Figure 14. Maximum Safe Operating Area

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

1
D = 0.5

0.5
0.3

R JC (t) = r(t) * RJC

R
JC = 1.5 C/W

0.2

0.2
0.1

0.1
P(pk)

0.05

0.05
0.03

t1

0.02
0.01

0.02
0.01
0.01

0.02

0.05

t2

TJ - T C = P * R
JC (t)
Duty Cycle, D = t 1 /t2

Single Pulse

0.1

0.2

0.5

2
5
t1 ,TIME (m s)

10

20

50

100

200

500

1000

Figure 15. Transient Thermal Response Curve

NDP6060 Rev. B1 / NDB6060 Rev. C

TO-220 Tape and Reel Data and Package Dimensions

TO-220 Tube Packing
Configuration: Figur e 1.0
Packaging Description:
TO-220 parts are ship ped normally in tube. The tube is
made of PVC plastic treated with anti -stati c agent.These
tubes in standard option are placed inside a dissipative
plastic bag, barcode labeled, and placed inside a box
made of recyclable corrugated pa per. One box contains
two ba gs maximum (see fig. 1.0). And one or several o f
these boxes are placed inside a labeled shipp ing bo x
whic h c omes in different sizes dependi ng on the nu mber
of parts ship ped. The other option comes in bulk as
described in the Packagin g Information table. The unit s in
this option are placed inside a small box laid w ith antistatic bubble sheet. These smaller boxes are individually
labeled and placed ins ide a larger box (see fig. 3.0).
These larger or intermediate boxes then will b e placed
finally inside a labeled shipping box whic h still comes in
different sizes depending on the number of units shipped.

45 unit s per Tube

12 Tubes per Bag

530mm x 130mm x 83mm

Intermediate box

2 bag s per Box

Conduct ive Plasti c B ag

TO-220 Packaging
Information: Figure 2.0

FSCINT Labe l samp le

FAIRCHILD SEMICONDUCTOR CORPORATION

TO-220 Packaging Information

Packaging Option
Packaging type
Qty per Tube/Box

NSID:

Standard

CBVK741B019

QTY:

FDP7060

HTB:B
1080

SPEC:

S62Z

(no f l ow code )

Rail/Tube

BULK

45

300

D/C1:

D9842

SPEC REV:

B2

QA REV:

530x130x83

114x102x51

Max qty per Box

1,080

1,500

Weight per unit (gm)

1.4378

1.4378

Box Dimension (mm)

LOT:

1080 uni ts maxi mum

quant it y per bo x

FSCINT Label

(FSCINT)

Note/Comments

TO-220 bulk Packing

Configuration: Figure 3.0
An ti-stati c
Bubbl e Sheet s

FSCINT Label

530mm x 130mm x 83mm

Intermediate box

1500 uni ts maxi mum

quant it y per intermediate box
300 units per
EO70 box

5 EO70 boxe s per per

Interm ediate Bo x

114mm x 102mm x 51mm

EO70 Immed iate Box

FSCINT Label

TO-220 Tube
Configuration: Figure 4.0

0.123
+0.001
-0.003

0.165
0.080

Note: All dim ensions are in inches

F 9852
NDP4060L

F 9852
NDP4060L

F 9852
NDP4060L

F 9852
NDP4060L

F 9852
NDP4060L

F 9852
NDP4060L

F 9852
NDP4060L

F 9852
NDP4060L

F 9852
NDP4060L

F 9852
NDP4060L

F 9852
NDP4060L

0.275

0.450
.030

F 9852
NDP4060L

1.300
.015
0.032
.003

20.000
+0.031
-0.065

0.160

0.800
0.275

August 1999, Rev. B

TO-220 Tape and Reel Data and Package Dimensions, continued

TO-220 (FS PKG Code 37)

1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]

Part Weight per unit (gram): 1.4378

September 1998, Rev. A

TO-263AB/D2PAK Tape and Reel Data and Package

Dimensions
TO-263AB/D2PAK Packaging
Configuration: Figure 1.0
Packaging Description:
TO-263/D2PAK parts are shipped in tape. The carrier tape
is made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
800 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). This and some other options are further
described in the Packaging Information table.

EL ECT ROST AT IC
SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S

TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms

Antistatic Cover Tape

ESD Label

These full reels are individually barcode labeled, dry

packed, and placed inside a standard intermediate box
(illustrated in figure 1.0) made of recyclable corrugated
brown paper. One box contains one reel maximum. And
these boxes are placed inside a barcode labeled shipping
box which comes in different sizes depending on the
number of parts shipped.

CAUTION

Static Dissipative
Embossed Carrier Tape
Moisture Sensitive
Label
F63TNR
Label

F9835
FDB603AL

F9835
FDB603AL

F9835
FDB603AL

Customized
Label

F9835
FDB603AL

TO-263AB/D2PAK Packaging Information

Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)

Standard
(no flow code)
TNR

Rail/Tube

800

45

L86Z

13" Dia

359x359x57

530x130x83

800

1,080

Weight per unit (gm)

1.4378

1.4378

Weight per Reel

1.6050

Max qty per Box

TO-263AB/D2PAK Unit Orientation

359mm x 359mm x 57mm

Standard Intermediate box
ESD Label

Note/Comments

Moisture Sensitive
Label
F63TNR Label sample

F63TNR Label
LOT: CBVK741B019

QTY: 800

FSID: FDB6320L

SPEC:

D/C1: D9842
D/C2:

QTY1:
QTY2:

SPEC REV:
CPN:
N/F: F

DRYPACK Bag
(F63TNR)3

TO-263AB/D2PAK Tape Leader and Trailer

Configuration: Figure 2.0

Carrier Tape
Cover Tape

Components
Trailer Tape
400mm minimum or
25 empty pockets

Leader Tape
1520mm minimum or
95 empty pockets

September 1999, Rev. B

TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued

TO-263AB/D2PAK Embossed Carrier Tape
Configuration: Figure 3.0
P0

D0

T
E1

F
K0

Wc

E2

B0

Tc
A0

D1

P1

User Direction of Feed

Dimensions are in millimeter

Pkg type

A0

B0

TO263AB/
D2PAK
(24mm)

10.60
+/-0.10

15.80
+/-0.10

W
24.0
+/-0.3

D0

D1

E1

E2

1.55
+/-0.05

1.60
+/-0.10

1.75
+/-0.10

22.25
min

11.50
+/-0.10

P1

P0

16.0
+/-0.1

4.0
+/-0.1

K0

4.90
+/-0.10

0.450
+/-0.150

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).

Wc

0.06
+/-0.02

0.9mm
maximum

10 deg maximum
Typical
component
cavity
center line

B0

21.0
+/-0.3

Tc

0.9mm
maximum

10 deg maximum component rotation

Typical
component
center line

Sketch A (Side or Front Sectional View)

A0

Component Rotation

2PAK

TO-263AB/D
Figure 4.0

Sketch C (Top View)

Component lateral movement

Sketch B (Top View)

Reel Configuration:

Component Rotation

W1 Measured at Hub

Dim A
Max

B Min
Dim C

Dim A
max

Dim D
min

Dim N

DETAIL AA
See detail AA
W3

13" Diameter Option

W2 max Measured at Hub

Dimensions are in inches and millimeters

Tape Size
24mm

Reel
Option
13" Dia

Dim A

Dim B

13.00
330

0.059
1.5

Dim C
512 +0.020/-0.008
13 +0.5/-0.2

Dim D
0.795
20.2

Dim N
4.00
100

Dim W1
0.961 +0.078/-0.000
24.4 +2/0

Dim W2
1.197
30.4

Dim W3 (LSL-USL)
0.941 0.1.079
23.9 27.4

August 1999, Rev. B

TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued

TO-263AB/D2PAK (FS PKG Code 45)

1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]

Part Weight per unit (gram): 1.4378

August 1998, Rev. A

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ISOPLANAR
MICROWIRE
POP
PowerTrench
QFET
QS
Quiet Series
SuperSOT-3
SuperSOT-6
SuperSOT-8

ACEx
CoolFET
CROSSVOLT
E2CMOSTM
FACT
FACT Quiet Series
FAST
FASTr
GTO
HiSeC

SyncFET
TinyLogic
UHC
VCX

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. D

Mouser Electronics
Authorized Distributor

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NDP6060