EE 557 RUN SHEET for PMOS FAB PROCESS

Name: __________________________________________
Wafer Number: _______________________
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Obtain a thermally oxidized N-type silicon wafer

Inspect wafer
Orientation: _______________
Resistivity: _______________-cm
Oxide thickness/color: _______________
Apply AZ 1518 positive photoresist (PR)
Postbake positive photoresist
Etch SiO2
Record etch time: __________seconds
Inspect wafer
Strip positive photoresist
Inspect wafer
Speedy Ultraclean (UC)
Phosphorus deposition
Warm-up: 5 minutes in N2 + O2 at 960C
Predep: 15 minutes in N2 + O2 + POCl3 at 960C
Purge: 5 minutes in N2 at 960C
Phosphorus drive-in
Purge: 5 minutes in N2+ O2 at 900C
Drive: 20 minutes in wet O2 at 900C
Purge: 5 minutes in N2 at 900C
Inspect wafer
Speedy Ultraclean
Bake wafer in hardbake oven
Adhesion promotion (HMDS application) (PR)
Apply AZ 1518 positive photoresist
Inspect wafer
Prebake positive photoresist
Align and expose pmos mask #1(S/D implant)
Record exposure time: __________ seconds
Develop and rinse positive photoresist
Inspect wafer
Postbake positive photoresist
Etch SiO2
Record etch time: __________ seconds
Inspect wafer
Strip positive photoresist
Inspect wafer
Photograph wafer
Speedy Ultraclean (UC)

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Inspect wafer
Boron ion implant
Dose: 5x1014cm-2
Energy: 25keV
Inspect wafer
Speedy Ultraclean
Boron drive-in
Warm-up: 5 minutes, O2 at 1000C
Drive: 20 minutes, wet O2 at 1000C
Purge: 5 minutes, O2 at 1000C
Inspect wafer
Speedy Ultraclean
Bake wafer in hardbake oven
Adhesion promotion (HMDS application) (PR)
Apply AZ 1518 positive photoresist
Inspect wafer
Prebake positive photoresist
Align and expose pmos mask #2 (Gate Oxidation)
Record exposure time: __________ seconds
Develop and rinse positive photoresist
Inspect wafer
Postbake positive photoresist
Etch SiO2
Record etch time: __________ seconds
Inspect wafer
Strip positive photoresist
Inspect wafer
Measure RS of p+ region and wafer back with 4-point-probe
Sheet resistance: __________/

Photograph wafer
Speedy Ultraclean + 5 seconds BHF dip (UC)
Inspect wafer
Gate oxidation
Warm-up: 5 minutes, N2 at 1000C
Oxidation: 20 minutes, O2 + TCA at 1000C
Purge: 5 minutes, N2 at 1000C
Inspect wafer
Speedy Ultraclean
Bake wafer in hardbake oven
Adhesion promotion (HMDS application) (PR)
Apply AZ 1518 positive photoresist
Inspect wafer
Prebake positive photoresist
Align and expose pmos mask #3 (contact window)
Record exposure time: __________ seconds
Develop and rinse positive photoresist
Inspect wafer

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Postbake positive photoresist

Etch SiO2
Record etch time: __________ seconds
Inspect wafer
Positive photoresist strip
Inspect wafer
Measure RS of p+ region and wafer back with 4-point-probe
Sheet resistance: __________/

Photograph wafer
Speedy Ultraclean + 5 seconds BHF dip (UC)
Inspect wafer
Aluminum sputtering on wafer front
Inspect wafer
Solvent clean
Bake wafer in hardbake oven
Apply AZ 1518 positive photoresist (PR)
Inspect wafer
Prebake positive photoresist
Align and expose pmos mask #4 (metal definition)
Record exposure time: __________ seconds
Develop and rinse positive photoresist
Inspect wafer
Postbake positive photoresist
Aluminum etch (hot plate)
Record etch time: __________ seconds
Inspect wafer
Positive photoresist strip
Inspect wafer
Solvent clean (UC)
Aluminum sputtering on wafer back
Inspect wafer
Photograph wafer
Solvent clean
Post metallization annealing at 500C
30 minutes in N2
Electrical tests

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