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Introduction To Microstrip Antennas PDF
Introduction To Microstrip Antennas PDF
David R. Jackson
Dept. of ECE
University of Houston
1
Contact Information
David R. Jackson
Dept. of ECE
N308 Engineering Building 1
University of Houston
Houston, TX 77204-4005
Phone: 713-743-4426
Fax: 713-743-4444
Email: djackson@uh.edu
2
Purpose of Short Course
3
Additional Resources
Note: You are welcome to use anything that you find on this website,
as long as you please acknowledge the source.
4
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
5
Notation
c = speed of light in free space =c 2.99792458 ×108 [ m/s ]
k1 = k0 ε r
k1 = wavenumber of substrate
µ0
η0 = intrinsic impedance of free space η0 = ≈ 376.7303 [ Ω ]
ε0
η1 = intrinsic impedance of substrate η1 = η0 / ε r
6
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
7
Overview of Microstrip Antennas
Also called “patch antennas”
Elliptical Triangular
9
Overview of Microstrip Antennas
History
10
Overview of Microstrip Antennas
Advantages of Microstrip Antennas
11
Overview of Microstrip Antennas
Disadvantages of Microstrip Antennas
Only used at microwave frequencies and above (the substrate becomes too
large at lower frequencies).
12
Overview of Microstrip Antennas
Applications
Applications include:
Satellite communications
Microwave communications
GPS antennas
13
Overview of Microstrip Antennas
Microstrip
antenna
Filter
DC supply Micro-D
connector K-connector
LNA
PD
Fiber input with
collimating lens Diplexer
Microstrip Antenna Integrated into a System: HIC Antenna Base-Station for 28-43 GHz
(Photo courtesy of Dr. Rodney B. Waterhouse)
14
Overview of Microstrip Antennas
Arrays
2×2 array
16
Overview of Microstrip Antennas
Rectangular patch
W Js
x
L
h εr
W = 1.5L is typical.
17
Overview of Microstrip Antennas
Circular Patch
a x
h εr
The location of the feed determines the direction of current flow and hence
the polarization of the radiated field.
18
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
19
Feeding Methods
20
Feeding Methods
z Coaxial Feed
εr h
x
Surface current
A feed along the centerline
is the most common
(minimizes higher-order
W modes and cross-pol).
Advantages: y
Simple
Directly compatible with coaxial cables
Easy to obtain input match by adjusting feed position ( x0 , y0 )
W
Disadvantages:
Significant probe (feed) radiation for thicker substrates x
L
Significant probe inductance for thicker substrates (limits
bandwidth)
Not easily compatible with arrays
22
Feeding Methods
Inset Feed
Advantages:
Simple Microstrip line
Disadvantages:
Significant line radiation for thicker substrates
For deep notches, patch current and radiation pattern may show distortion
23
Feeding Methods
Inset Feed
The coefficients A and B depend on the notch width S but (to a good
approximation) not on the line width Wf .
24
Feeding Methods
Proximity-coupled Feed
(Electromagnetically-coupled Feed)
Advantages:
Allows for planar feeding
Less line radiation compared to microstrip feed
Can allow for higher bandwidth (no probe inductance, so
substrate can be thicker)
Patch
Microstrip
Top view line
Microstrip line
Disadvantages:
Requires multilayer fabrication
Alignment is important for input match
25
Feeding Methods
Gap-coupled Feed
Advantages:
Allows for planar feeding
Can allow for a match even with high edge impedances, where a notch
might be too large (e.g., when using high permittivity)
Gap Patch
Patch
Disadvantages:
Requires accurate gap fabrication
Requires full-wave design
26
Feeding Methods
Aperture-coupled Patch (ACP)
Advantages:
Allows for planar feeding Slot
Disadvantages: Slot
Requires multilayer fabrication
Alignment is important for input match Microstrip line
27
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
28
Basic Principles of Operation
The basic principles are illustrated here for a rectangular patch, but the
principles apply similarly for other patch shapes.
We use the cavity model to explain the operation of the patch antenna.
h n̂
PMC
29
Basic Principles of Operation
Main Ideas:
Note: As the substrate thickness gets smaller the patch current radiates less, due to
image cancellation. However, the Q of the resonant mode also increases, making the
patch currents stronger at resonance. These two effects cancel, allowing the patch to
radiate well even for small substrate thicknesses.
As the substrate gets thinner the patch current radiates less, due to image
cancellation (current and image are separated by 2h).
However, the Q of the resonant cavity mode also increases, making the
patch currents stronger at resonance.
These two effects cancel, allowing the patch to radiate well even for thin
substrates (though the bandwidth decreases).
z 1
Js ∝
h
εr Js h
x
31
Basic Principles of Operation
Thin Substrate Approximation
Hence E ( x, y, z ) ≈ zˆ Ez ( x, y )
E z ( x, y )
h
32
Basic Principles of Operation
Thin Substrate Approximation
1
H=− ∇× E
jωµ
∇ × ( zEˆ z ( x, y ) )
1
=−
jωµ
=−
1
jωµ
( − zˆ × ∇Ez ( x, y ) )
33
Basic Principles of Operation
Thin Substrate Approximation
( x, y )
H=
1
jωµ
( zˆ × ∇E ( x, y ) )
z
E z ( x, y )
h
H ( x, y )
34
Basic Principles of Operation
Magnetic-wall Approximation
H tbot ≈ 0
35
Basic Principles of Operation
Magnetic-wall Approximation
nˆ × H ( x, y ) =
0 tˆ
x
PMC
H t
edge
≈0
n̂
h h
36
Basic Principles of Operation
Magnetic-wall Approximation
y
nˆ × H ( x, y ) =
0
L
( x, y )
H=
1
jωµ
( zˆ × ∇E ( x, y ) )
z
Js n̂
W
Hence,
nˆ × ( zˆ × ∇Ez ( x, y ) ) = 0
tˆ
x
nˆ × ( zˆ × ∇Ez ( x, y=
) ) zˆ ( nˆ ⋅∇Ez ( x, y ) ) − ∇Ez ( x, y )( nˆ ⋅ zˆ )
zˆ ( nˆ ⋅∇Ez ( x, y ) ) = 0
∂Ez n̂
=0 (Neumann B.C.)
h
∂n PMC
37
Basic Principles of Operation
Resonance Frequencies
y
∇ Ez + k Ez =
2
02
k= k=
1 k0 ε r
E z ( x, y )
(TMmn mode)
x
L
mπ 2 nπ 2
We then have − − + k1 Ez =
2
0
L W
mπ 2 nπ 2
Hence − − + k1 =
2
0
L W
38
Basic Principles of Operation
Resonance Frequencies
We thus have
y
mπ nπ E z ( x, y )
2 2
=k 1
2
+
L W
PMC
W
Recall that
= 0 εr
k1 k= ω µ 0ε 0 ε r
x
ω = 2π f L
Hence
mπ nπ
2 2
c
=f + c = 1/ µ0ε 0
2π ε r L W
39
Basic Principles of Operation
Resonance Frequencies
y
E z ( x, y )
Hence f = f mn
(resonance frequency of (m,n) mode)
PMC
W
x
L
mπ nπ
2 2
c
f mn +
2π ε r L W
40
Basic Principles of Operation
Dominant (1,0) mode
y
This structure operates as a “fat planar dipole.”
Current
This mode is usually used because the
radiation pattern has a broadside beam.
c 1 W
f10 =
2 εr L
x
πx
Ez = cos L
L
1 π π x
H ( x, y ) = − yˆ sin
The resonant length L is about 0.5 guided
jωµ L L wavelengths in the x direction.
−1 π π x
Js = x
ˆ sin
jωµ 0 L L
41
Basic Principles of Operation
Resonance Frequency of Dominant Mode
mπ nπ
2 2
This is equivalent to saying that
= 2
k1 + the length L is one-half of a
L W wavelength in the dielectric.
λ0 / 2
(1,0) mode: k1 L = π =L λ=
d /2
εr
42
Basic Principles of Operation
Resonance Frequency of Dominant Mode
The resonance frequency calculation can be improved by adding a
“fringing length extension” ∆L to each edge of the patch to get an
“effective length” Le .
y
Le = L + 2∆L
c 1 ∆L ∆L
f10 =
2 ε r Le L
x
Le
Hammerstad formula:
eff W
( rε + 0.3 ) h + 0.264
0.412
∆L / h =
ε eff − 0.258 W + 0.8
( r ) h
−1/ 2
ε r +1 ε r −1 h
ε reff = + +
2
1 12
2 W
Note: ∆L ≈ 0.5 h
45
Basic Principles of Operation
Results: Resonance Frequency
1
Hammerstad
NORMALIZED FREQUENCY
Measured
0.95
0.9
0.85
0.8
0.75
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07
hh // λ
λ0
0
47
General Characteristics
Bandwidth
48
General Characteristics
Width Restriction for a Rectangular Patch
W < 2L c 1
f 01 =
2 εr W
c mπ nπ
2 2
c 1
f10 =
f mn + 2 εr L
2π ε r L W
c 2
f 02 =
c 1 1 2 εr W
f 02 −=
f 01 −
ε r W 2L
fc
W
f01 f10 f02
W = 1.5 L is typical.
L
49
General Characteristics
50
General Characteristics
Results: Bandwidth
30
25
εεr r==10.8
10.8
BANDWIDTH (%)
20
15
10
5 2.2
2.2
0
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
hh/ /λλ0 0
(x0, y0)
W
L L
x
52
General Characteristics
Resonant Input Resistance (cont.)
y
Desired mode: (1,0)
x
L
53
General Characteristics
Resonant Input Resistance (cont.)
For a given mode, it can be shown that the resonant input resistance is
proportional to the square of the cavity-mode field at the feed point.
( x0 , y0 )
y
Rin ∝ E 2
z
(x0, y0)
For (1,0) mode: W
π x0
Rin ∝ cos 2
x
L L
54
General Characteristics
Resonant Input Resistance (cont.)
y
Hence, for (1,0) mode:
π x0 (x0, y0)
Rin = Redge cos 2
L W
x
L
55
General Characteristics
Results: Resonant Input Resistance
200
The discrete data points are from a CAD
formula (given later.) y0 = W/2
INPUT RESISTANCE ( Ω )
150
εεr r==10.8
10.8 Region where loss is important x0 = L/4
100 y
2.2
2.2
50 (x0, y0)
W
0
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08
hh // λ
λ0
0
L x
Pr
er =
Ptot
Conductor loss
Dielectric loss
Surface-wave excitation
57
General Characteristics
Radiation Efficiency (cont.)
TM0
surface wave
Js
x
cos (φ) pattern
58
General Characteristics
Radiation Efficiency (cont.)
Hence,
Pr Pr
=
er =
Ptot Pr + ( Pc + Pd + Psw )
59
General Characteristics
Radiation Efficiency (cont.)
Some observations:
Conductor and dielectric loss is more important for thinner substrates (the
Q of the cavity is higher, and thus more seriously affected by loss).
Conductor loss is usually more important than dielectric loss for typical
substrate thicknesses and loss tangents.
1 2
=Rs = δ
σδ ωµσ Rs is the surface resistance of the metal.
The skin depth of the metal is δ.
ωµ0
=Rs ∝ f
2σ
60
General Characteristics
Radiation Efficiency (cont.)
For a typical substrate such as εr = 2.2, the radiation efficiency is maximum for
h / λ0 ≈ 0.02.
61
General Characteristics
Results: Efficiency (Conductor and dielectric losses are neglected.)
100
2.2
2.2
80
EFFICIENCY (%)
60
ε r10.8
= 10.8
40
exact
CAD
20
0
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
h // λ
h λ0
0
εr = 2.2 or 10.8 W/L = 1.5 Note: CAD plot uses Pozar formula (given later).
62
General Characteristics
Results: Efficiency (All losses are accounted for.)
100
2.2
2.2
80
EFFICIENCY (%)
exact
60
CAD
ε rr == 10.8
10.8
40
tan δ = 0.001
20 σ 3.0 × 107 [S/m]
=
0
0 0.02 0.04 0.06 0.08 0.1
hh // λλ00
εr = 2.2 or 10.8 W/L = 1.5 Note: CAD plot uses Pozar formula (given later).
63
General Characteristics
Radiation Pattern
y
E-plane: co-pol is Eθ
L H-plane: co-pol is Eφ
Js
W
x E plane
Probe
64
General Characteristics
Radiation Patterns (cont.)
The truncation of the ground plane will cause edge diffraction, which
tends to degrade the pattern by introducing:
65
General Characteristics
Radiation Patterns
y Eθ varies as cos φ
Space wave
L
Js
W
E plane
H plane
66
General Characteristics
Radiation Patterns
E-plane pattern
-30
120 240
150 210
180 67
General Characteristics
Radiation Patterns
H-plane pattern
45 -10 -45
-20
-30
135 225
180
68
General Characteristics
Directivity
69
General Characteristics
Results: Directivity (relative to isotropic)
10
εεr r==2.2
2.2
8
DIRECTIVITY (dB)
10.8
10.8
6
4
exact
CAD
2
0
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
hh//λλ0
0
71
CAD Formulas
CAD formulas for the important properties of the
rectangular microstrip antenna will be shown.
Radiation efficiency
Bandwidth (Q)
Resonant input resistance
Directivity
72
CAD Formulas
Radiation Efficiency
erhed
er =
Rsave 1 3 ε r L 1
1+ e
hed
d +
r
π η
0 h / λ0 16 1 W
p c h / λ0
where Comment: The efficiency becomes small as the substrate gets thin.
= =
d tan δ loss tangent of substrate
1 ωµ
=
Rs =
surface resistance of metal =
σδ 2σ
=
Rsave (Rs
patch
+ Rsground ) / 2
73
CAD Formulas
Radiation Efficiency (cont.)
hed
P 1
=erhed =
sp
1
3
1 3
2 ( 0 )
k h 60π 1 −
3
= hed
Psw
λ0 ε r
Note: When we say “unit amplitude” here, we assume peak (not RMS) values.
74
CAD Formulas
Radiation Efficiency (cont.)
Hence, we have
1
ehed
r = 3
3 1 1
1 + π ( k0 h ) 1 −
4 c1 ε r
75
CAD Formulas
Radiation Efficiency (cont.)
1 2/5
c1 =1 − +
εr ε r2
3 1
( k0 W ) + ( a2 + 2a4 ) ( k0 W ) + c2 ( k0 L )
a2 2 4 2
p =+
1 2
10 560 5
1
+ a2 c2 ( k0 W ) ( k0 L )
2 2
70
c2 = − 0.0914153
a2 = − 0.16605
a4 = 0.00761
76
CAD Formulas
Improved formula for HED surface-wave power (due to Pozar)
ε r ( x − 1)
3/2
ηk 2 2
=
hed 0 0 0
P
8 ε r (1 + x1 ) + (k0 h) x02 − 1 (1 + ε r2 x1 )
sw
α 0 = s tan ( k0 h ) s
1
− tan ( k0 h ) s +
α1 =
( k0 h ) s
s cos ( k0 h ) s
2
=s ε r −1
D. M. Pozar, “Rigorous Closed-Form Expressions for the Surface-Wave Loss of Printed
Antennas,” Electronics Letters, vol. 26, pp. 954-956, June 1990.
Note: The above formula for the surface-wave power is different from that given in Pozar’s paper by
a factor of 2, since Pozar used RMS instead of peak values.
77
CAD Formulas
Bandwidth
1 Rsave 1 16 p c1 h W 1
BW =+ d + hed
2 π η0 h / λ0 3 ε r λ0 L er
1
Q= Comments: For a lossless patch, the bandwidth is
approximately proportional to the patch width and
2 BW to the substrate thickness. It is inversely
proportional to the substrate permittivity.
For very thin substrates the bandwidth will
increase, but as the expense of efficiency.
Us
Q ≡ ω0 U s = energy stored in patch cavity
P
P = power that is radiated and dissipated by patch
1 P
=
Q ω0U s
P = Pd + Pc + Psp + Psw
1 1 1 1 1
= + + +
Q Qd Qc Qsp Qsw
79
CAD Formulas
Q Components
Qd = 1 / tan δ
η 0 ( k0 h)
Qc = ave =
Rsave (Rs
patch
+ Rsground ) / 2
2 Rs
3 εr L 1
Qsp ≈ The constants p and c1 were defined previously.
16 pc1 W h / λ0
erhed erhed =
1
Qsw = Qsp hed
3
1 − e 3 1 1
r
1 + π ( k0 h ) 1 −
4 c1 ε r
80
CAD Formulas
Resonant Input Resistance
Probe-feed Patch
π x0
=
R R= Redge cos
max
in
2
L
4η0 L h
π W λ0
Redge =
R 1 16 p c1 W h 1
d + s + L hed
π η
0 h / λ0 3 ε
r λ0 er
81
CAD Formulas
Directivity
3 εr
D= ( ( k1h ) )
2
tanc
pc1 ε r + tan ( k1h )
2
k1 = k0 ε r
where
tanc ( x ) ≡ tan ( x ) / x
82
CAD Formulas
Directivity (cont.)
3
D≈
p c1
83
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
84
Radiation Pattern
There are two models often used for calculating the radiation pattern:
Electric current model
Magnetic current model
Patch
x
h Probe εr
Coax feed
85
Radiation Pattern
Electric current model:
We keep the physical currents flowing on the patch (and feed).
Patch
x
h Probe εr
Coax feed
= J top
J spatch s + J bot
s J spatch
x
h J sprobe εr
86
Radiation Pattern
Magnetic current model:
We apply the equivalence principle and invoke the (approximate) PMC condition
at the edges.
Equivalence surface Patch
x
J se = nˆ × H
h Probe εr
M se =−nˆ × E
Coax feed
The equivalent
surface current is
approximately zero
on the top surface
x
(weak fields) and h M se M se εr
the sides (PMC).
We can ignore it on
the ground plane (it
does not radiate). M se =−nˆ × E
87
Radiation Pattern
Theorem
The electric and magnetic models yield identical patterns
at the resonance frequency of the cavity mode.
Assumption:
The electric and magnetic current models are based on the fields of a
single cavity mode, corresponding to an ideal cavity with PMC walls.
D. R. Jackson and J. T. Williams, “A Comparison of CAD Models for Radiation from Rectangular
Microstrip Patches,” Intl. Journal of Microwave and Millimeter-Wave Computer Aided Design, vol. 1,
no. 2, pp. 236-248, April 1991.
88
Radiation Pattern
Comments on the Substrate Effects
D. R. Jackson and J. T. Williams, “A Comparison of CAD Models for Radiation from Rectangular
Microstrip Patches,” Intl. Journal of Microwave and Millimeter-Wave Computer Aided Design, vol. 1,
no. 2, pp. 236-248, April 1991.
89
Radiation Pattern
Comments on the Two Models
For the rectangular patch, the electric current model is the simplest since
there is only one electric surface current (as opposed to four edges).
For the rectangular patch, the magnetic current model allows us to classify
the “radiating” and “nonradiating” edges.
For the circular patch, the magnetic current model is the simplest since there
is only one edge (but the electric surface current is described by Bessel
functions).
y
πx
J s = xˆ A10 cos πx
L “Radiating edges” Ez = − sin
L
M se =−nˆ × E
M se
L “Nonradiating edges”
90
Radiation Pattern
Rectangular Patch Pattern Formula
(The formula is based on the electric current model.)
L
x
h εr
Infinite ground plane and substrate
H-plane
The origin is at the
center of the patch. y
(1,0) mode
W x E-plane
πx
J s x cos
ˆ
L
The probe is on the x axis.
L
91
Radiation Pattern
The far-field pattern can be determined by reciprocity.
ky W kx L
sin cos
π WL 2 2
Ei (r , θ , φ ) = Ei ( r , θ , φ )
hex
2 ky W π 2 k L 2
− x
2 2 2
y
i = θ or φ
k x = k0 sin θ cos φ
k y = k0 sin θ sin φ Js
W x
The “hex” pattern is for a
horizontal electric dipole in the x direction,
sitting on top of the substrate.
L
D. R. Jackson and J. T. Williams, “A Comparison of CAD Models for Radiation from Rectangular
Microstrip Patches,” Intl. Journal of Microwave and Millimeter-Wave Computer Aided Design, vol. 1,
no. 2, pp. 236-248, April 1991.
92
Radiation Pattern
Eφhex ( r , θ , φ ) = − E0 sin φ F (θ )
Eθhex ( r , θ , φ ) = E0 cos φ G (θ )
where
− jω µ0 − jk0 r
E0 = e
4π r
2 tan ( k0 h N (θ ) )
F (θ ) = 1 + Γ TE
(θ ) =
tan ( k0 h N (θ ) ) − j N (θ ) sec θ
2 tan ( k0 h N (θ ) ) cos θ
(θ ) cos θ (1 + ΓTM=
G= (θ ) ) εr
tan ( k0 h N (θ ) ) − j cos θ
N (θ )
N (=
θ) ε r − sin 2 (θ ) Note: To account for lossy substrate, use
ε r → ε rc = ε r (1 − j tan δ )
93
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
94
Input Impedance
Various models have been proposed over the years for calculating the
input impedance of a microstrip patch antenna.
Spectral-domain method
More challenging to implement
Accounts rigorously for both radiation and surface-wave excitation
Commercial software
Very accurate
Can be time consuming
95
Input Impedance
Comparison of the Three Simplest Models
Circuit model of patch Transmission line model of patch
96
Input Impedance
97
Input Impedance
Probe-fed Patch
Near the resonance frequency, the patch cavity can be approximately modeled
as a resonant RLC circuit.
The resistance R accounts for radiation and losses.
A probe inductance Lp is added in series, to account for the “probe inductance”
of a probe feed.
L
Lp
Zin R C
98
Input Impedance
R
Z in ≈ jω Lp +
f f0
1 + jQ −
f0 f
R 1
Q= BW = BW is defined here by SWR < 2.0 when the
ω0 L 2Q RLC circuit is fed by a matched line (Z0 = R).
1
ω0 2=
= π f0
LC
L
Lp
Zin R C
Z=
in Rin + jX in
99
Input Impedance
R
Rin = 2
f f0 =
R R= max
R
1 + Q − in f = f
in 0
f0 f
R is the input resistance at the resonance of the patch cavity
(the frequency that maximizes Rin).
L
max C
R in R
f = f0
100
Input Impedance
R
Z in ≈ jω Lp +
f f0
1 + jQ −
f0 f
The input resistance is determined once we know four parameters:
f0: the resonance frequency of the patch cavity
CAD formulas
for the first three R: the input resistance at the cavity resonance frequency f0
parameters
have been given Q: the quality factor of the patch cavity
earlier.
Lp: the probe inductance
Lp (R, f0, Q)
L
C
Zin R
101
Input Impedance
Results: Input Resistance vs. Frequency
Note: “exact” means the cavity model will all infinite modes.
80
Rectangular patch
70
60
CAD
50 exact
Rin ( Ω )
40
Frequency where
30 the input resistance
20
is maximum (f0):
Rin = R
10
0
4 4.5 5 5.5 6
FREQUENCY (GHz)
20
Xp
-40
4 4.5 5 5.5 6
FREQUENCY (GHz)
Frequency where the
input impedance is real
η0 2
=Xp ( k0 h ) − γ + ln
2π ε r ( k0 a )
This is based on an infinite parallel-plate model.
εr 2a h
X p = ω Lp
=η0 µ0 / ε 0 376.7303 Ω
=
104
Input Impedance
Feed (probe) reactance increases proportionally with substrate
thickness h.
η0 2
=Xp ( k0 h ) − γ + ln
2π
ε r ( k0 a )
Important point:
If the substrate gets too thick, the probe reactance will make it difficult
to get an input match, and the bandwidth will suffer.
105
Input Impedance
Results: Probe Reactance (Xf =Xp= ωLp)
40
35 CAD
exact Rectangular patch
30
εr = 2.2
25
Xf ( Ω )
y
20
W/L = 1.5
15
Note: “exact” means the cavity model with all infinite modes. (x0, y0) W
10 h = 0.0254 λ0
5
L L x a = 0.5 mm
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Center Xxr
r Edge
y
Results from CAD formulas
Feed at (x0, y0)
1) L = 6.07 cm, W = 9.11 cm
2) x0 = 1.82 cm
3) BW = 1.24% Y0 = W/2
4) er = 81.9% W
5) Xp = 11.1 Ω
6) Zin = 50.0 + j(11.1) Ω x
7) D = 5.85 (7.67 dB) L
8) G = (D)(er) = 4.80 (6.81 dB)
108
Design Example
R
Z in ≈ jX p +
f f
Results from CAD formulas 1 + jQ − 0
f0 f
f0 = 1.575 ×109 Hz
R = 50 Ω
60
Q = 56.8 50.255
Xp = 11.1 Ω 50
Rin
40
Ω 30
Rin( fghz)
20
Xin( fghz)
10
Xin
− 10
− 13.937
− 20
1.5 1.525 1.55 1.575 1.6 1.625 1.65
1.5 fghz 1.65
f (GHz)
109
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
110
Circular Polarization
2) Dual feed with delay line or 90o hybrid phase shifter (broader CP
bandwidth but uses more space).
111
Circular Polarization
Single Feed Method
(0,1)
The feed is on the diagonal.
The patch is nearly
(but not exactly) square. W
(1,0)
L ≈W
L
Basic principle: The two dominant modes (1,0) and (0,1) are
excited with equal amplitude, but with a ±45o phase.
112
Circular Polarization
Design equations: y
fx + f y
f CP =
2
(0,1)
The optimum CP frequency is the
1
average of the x and y resonance BW =
frequencies. 2Q W
(1,0)
(SWR < 2 )
1 x0 = y0
f x = f CP 1
2Q x
Top sign for LHCP,
L
1
bottom sign for RHCP.
=f y f CP 1 ±
2Q
y y
L L
x x
L L
1
=
Linearly-polarized (LP) patch: LP
BWSWR (SWR < 2)
2Q
=
BW CP
SWR
Q
2
=
(SWR < 2) BW CP
AR
0.348
Q
( AR < 2 (3dB) )
115
Circular Polarization
Dual-Feed Method
y RHCP
Phase shift realized with delay line: L
P
L
P+λg/4
116
Circular Polarization
Phase shift realized with 90o quadrature hybrid (branchline coupler)
RHCP
Z0 Z0 / 2 Z0
Feed
λg/4 Z0
50 Ohm load
λg/4
117
Circular Polarization
Synchronous Rotation
Multiple elements are rotated in space and fed with phase shifts.
-180o
-90o
-270o
0o
Because of symmetry, radiation from higher-order modes (or probes)
tends to be reduced, resulting in good cross-pol.
118
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
119
Circular Patch
a x
h εr
120
Circular Patch
Resonance Frequency
Ez = cos ( mφ ) J m ( k1 ρ ) PMC
a
k1 = k0 ε r
∂Ez
=0 J m′ ( k1a ) = 0
∂ρ ρ =a
121
Circular Patch
Resonance Frequency
J m′ ( k1a ) = 0
a PMC
This gives us
′
k1a = xmn
c
f mn = ′
xmn c=
1
2π ε r µ 0ε 0
122
Circular Patch
Resonance Frequency
′
Table of values for xmn
n /m 0 1 2 3 4 5
1 3.832 1.841 3.054 4.201 5.317 5.416
2 7.016 5.331 6.706 8.015 9.282 10.520
3 10.173 8.536 9.969 11.346 12.682 13.987
c
f11 = x11′ ′ ≈ 1.841
x11
2π a ε r
123
Circular Patch
Dominant mode: TM11
y y
x x
124
Circular Patch
Fringing extension
ae = a + ∆a
c a PMC
f11 = x11′
2π ae ε r
a + ∆a
“Long/Shen Formula”:
2h πa h πa
ae =
a 1+ 2h
ln + 1.7726 or ∆a ≈ ln + 1.7726
π aε r πε r 2h
L. C. Shen, S. A. Long, M. Allerding, and M. Walton, "Resonant Frequency of a Circular Disk Printed-
Circuit Antenna," IEEE Trans. Antennas and Propagation, vol. 25, pp. 595-596, July 1977.
125
Circular Patch
Patterns
(The patterns are based on the magnetic current model.)
2a
x
h εr
Infinite GP and substrate
H-plane
In patch cavity:
J1 ( k1 ρ ) 1
Ez ( ρ , φ ) = cosφ k1 = k0 ε r
J1 ( k1a ) h
(The edge voltage has a maximum of one volt.)
126
Circular Patch
Patterns
E0
Eθ ( r , θ , φ ) = 2π a
R
tanc ( k z1h ) cosφ J1′ ( k0 a sinθ ) Q (θ )
η0
E0 J1 ( k0 a sinθ )
Eϕ ( r , θ , φ ) = −2π a
R
tanc ( k z1h ) sinφ P (θ )
η0 k0 a sinθ
where
tanc x tan x / x
−2 jN (θ )
P (θ ) cosθ (1 − Γ =
= (θ ) ) cosθ
TE
tan ( k0 hN (θ ) ) − jN (θ ) secθ
εr − jω µ0 − jk0 r
−2 j cosθ E0 =
N (θ ) e
Q (θ ) = 1 − ΓTM (θ ) = 4π r
εr
tan ( k0 h N (θ ) ) − j cosθ
N (θ ) N (=
θ) ε r − sin 2 (θ )
ε r ε r′ (1 − j tan δ )
Note: To account for lossy substrate, use=
127
Circular Patch
Input Resistance
ρ0
J12 ( k1 ρ0 )
Rin ≈ Redge 2
J1 ( k1a )
k1 = k0 ε r
128
Circular Patch
Input Resistance (cont.)
1
Redge = er
2 Psp
where er = radiation efficiency
π /2
π
( k0 a ) ∫ tanc2 ( k0 hN (θ ) )
2
Psp =
8η0 0
⋅ Q (θ ) J1 ( k0 a sin θ ) + P (θ ) J inc
2
′ 2 2 2
( k0 a sin θ ) sin θ dθ
J inc ( x ) = J1 ( x ) / x
CAD Formula:
π
Psp = ( k0 a ) 2 I c
8η0 e0 = 1
e2 = −0.400000
e4 = 0.0785710
6
4 pc = ∑ ( k0 a ) e2 k −7.27509 × 10−3
2k
e6 =
I c = pc
3 k =0 =e8 3.81786 × 10−4
−1.09839 × 10−5
e10 =
=e12 1.47731 × 10−7
130
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
131
Improving Bandwidth
132
Improving Bandwidth
Probe Compensation
L-shaped probe: As the substrate
thickness increases the
probe inductance limits
the bandwidth – so we
compensate for it.
Top view
133
Improving Bandwidth
SSFIP: Strip Slot Foam Inverted Patch (a version of the ACP).
Bandwidths greater than 25% have been achieved.
Increased bandwidth is due to the thick foam substrate and
also a dual-tuned resonance (patch+slot).
Foam
Microstrip
substrate
J.-F. Zürcher and F. E. Gardiol, Broadband Patch Antennas, Artech House, Norwood, MA, 1995.
134
Improving Bandwidth
Stacked Patches
Microstrip line
Slot
135
Improving Bandwidth
Stacked Patches
-5
-10
-30
-35
-40
3 4 5 6 7 8 9 10 11 12
Frequency (GHz)
Stacked patch with ACP feed
90 80
100 70
110
0 60
12
0 50
13
40
14
0
30
15
160
20
170
10
0
180
0
0.2
0.5
10
-170
-10
-160
-20
13 GHz
-30
-15
40
-4
-1
0
-5
30
4 GHz
0
-1
0 -60
-12 -70
-110 -80
-100 -90
“Single Layer Single Patch Wideband Microstrip Antenna,” T. Huynh and K. F. Lee,
Electronics Letters, Vol. 31, No. 16, pp. 1310-1312, 1986.
140
Improving Bandwidth
Double U-Slot
141
Improving Bandwidth
E Patch
142
Multi-Band Antennas
General Principle:
143
Multi-Band Antennas
Low-band
Low-band
Low-band
High-band
144
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
145
Miniaturization
• High Permittivity
• Quarter-Wave Patch
• PIFA
• Capacitive Loading
• Slots
• Meandering
146
Miniaturization
High Permittivity
εr = 1
εr = 4
Size reduction
W W′ =W / 2
(Same aspect ratio)
L′ = L / 2
The smaller patch has about one-fourth the bandwidth of the original patch.
(Bandwidth is inversely proportional to the permittivity.)
147
Miniaturization
Quarter-Wave patch
Ez = 0
Short-circuit vias
W W
L L′ = L / 2
The new patch has about one-half the bandwidth of the original patch.
U s′ = U s / 2
Neglecting losses:
Us
Q ′ = 2Q
Q = ω0
Pr Pr′ = Pr / 4
148
Miniaturization
Smaller Quarter-Wave patch
A quarter-wave patch with the same aspect ratio W/L as the original patch
W′ =W / 2
Ez = 0 Short-circuit vias
Width reduction
W W W′
L′ = L / 2
L L′ = L / 2
The new patch has about one-half the bandwidth of the original quarter-
wave patch, and hence one-fourth the bandwidth of the regular patch.
149
Miniaturization
Quarter-Wave Patch with Fewer Vias
W W
L′ = L / 2 L′′
L′′ < L′
Fewer vias actually gives more miniaturization!
(The edge has a larger inductive impedance: explained on the next slide.)
150
Miniaturization
Quarter-Wave Patch with Fewer Vias
Inductance
Short Open
The Smith chart provides a simple explanation for the length reduction.
151
Miniaturization
Planar Inverted F (PIFA)
Feed
Shorting strip or via
Top view
Feed
Shorting plate Top view
The capacitive loading allows for the length of the PIFA to be reduced.
1
ω0 =
LC
153
Miniaturization
Circular Patch Loaded with Vias
Feed c
2a
0
0
315
-10
45
-20
-5
-30
S11[db]
-10
-20
-30
-40
-10
270
90
-15
E-theta
E-phi
-20
225
135
0.5 1 1.5 2 2.5
Frequency [GHz]
180
Unloaded: resonance frequency = 5.32 GHz.
(Miniaturization factor = 4.8)
155
Miniaturization
Slotted Patch
Top view
0o ±90o
Linear CP
156
Miniaturization
Meandering
Via
Feed
Feed Via
157
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
158
Reducing Surface and Lateral Waves
Reduced Surface Wave (RSW) Antenna
z
Feed
b
Shorted annular ring ρ0
ρo
a
x a b
h
159
Reducing Surface and Lateral Waves
Reducing surface-wave excitation and lateral radiation reduces
edge diffraction.
160
Reducing Surface and Lateral Waves
y Principle of Operation
TM11 mode:
−1
a x Ez ( ρ , φ ) = V0 cosφ J1 ( k1 ρ )
hJ1 ( k1a )
M sφ
k= k= k0 ε r V0
Ez = − cos φ
1
At edge:
h
M s =− nˆ × E =− ρˆ × ( zE
ˆ z)
M sφ (φ ) = Ez ( a, φ )
V0
M sφ = − cos φ
h
161
Reducing Surface and Lateral Waves
y
Substrate
V0
a x M sφ = − cos φ
h
M sφ
Surface-Wave Excitation:
( )
EzTM 0 = ATM 0 cos φ H1( 2) βTM 0 ρ e − jk z 0 z
(z > h)
(
ATM 0 = AJ1′ βTM 0 a )
Set ( )
J1′ βTM 0 a = 0
162
Reducing Surface and Lateral Waves
y
Substrate
βTM a = x1′n
0
a x
For TM11 mode: x11′ ≈ 1.841
M sφ
163
Reducing Surface and Lateral Waves
z
Feed
b
Shorted annular ring ρ0
ρo
a
x a b
h
βTM b = 1.841
0
y Ground plane
V0
M sφ = − cos φ
h
a x
Assume no substrate outside of patch
M sφ (or very thin substrate):
1 − jk0 ρ
Space-Wave Field: E SP
= ASP cos φ e (z = h)
ρ
z
ASP = CJ1′ ( k0 a )
a x βTM ≈ k0
0
M sφ
The same design reduces
both surface-wave fields and
lateral-radiation fields.
k0 a = 1.841
166
Reducing Surface and Lateral Waves
E-plane Radiation Patterns
Measurements were taken on a 1 m diameter circular ground plane at 1.575 GHz.
Measurement
0
Theory (infinite GP) 0
30 -30 30 -30
-10 -10
-30 -30
180 180
Conventional RSW
167
Reducing Surface and Lateral Waves
Reducing surface-wave excitation and lateral
radiation reduces mutual coupling.
Space-wave radiation
Lateral radiation
Surface waves
168
Reducing Surface and Lateral Waves
Reducing surface-wave excitation and lateral radiation reduces mutual coupling.
-40
S12 [dB]
-50 1/r
-60
-70
-80 1/r3
-90
-100
0 1 2 3 4 5 6 7 8 9 10
Separation [Wavelengths]
169
References
General references about microstrip antennas:
170
References (cont.)
General references about microstrip antennas (cont.):
171
References (cont.)
172
References (cont.)
173
174
Transmission line model
Cavity model (eigenfunction expansion)
175
Input Impedance
Transmission Line Model for Input Impedance
176
Input Impedance
y
Physical patch dimensions (W × L)
Js x0e= x0 + ∆L
We PMC y0e= y0 + ∆W
( x0e , y0e )
x
Le ε rceff
Denote
ke = k0 ε rceff Note:
∆L is from Hammerstad’s formula
ε r′ (1 − j leff )
∆W is from Wheeler’s formula
ε=
eff
rc
1 1 1 1 1
leff = = + + + A CAD formula for Q has been given earlier.
Q Qd Qc Qsp Qsw
177
Input Impedance
ln 4
∆W =
h (Wheeler formula)
π
W
+ 0.262
ε reff + 0.300 h
∆L =0.412h eff (Hammerstad formula)
εr − 0.258 W + 0.813
h
ε +1 ε −1 1
ε reff r + r
=
2 2 h
1 + 12
W
178
Input Impedance
x=0 x = x0e x = Le
Z 0effc , kceff
Lp
X p = ω Lp Y0effc = 1 / Z 0effc
eff h 1 h
Z 0effc η=
= η
Z= in + jX p
c 0
in Z TL We ε rceff We
Zin
= / Z inTL jY0effc tan ( kceff x0e )
YinTL 1=
where
(
+ jY0effc tan kceff ( Le − x0e ) )
η0 2 γ 0.57722
=Xp ( k0 h ) − γ + ln
2π ε r ( k0 a ) (Euler's constant )
(from a parallel-plate model of probe inductance)
179
Input Impedance
Cavity Model
180
y
Input Impedance
Physical patch dimensions (W × L)
x0e= x0 + ∆L
We ( x0e , y0e ) PMC
y0e= y0 + ∆W
x
Le
Denote ε rceff
ke = k0 ε rceff Note:
∆L is from Hammerstad’s formula
ε= ε r′ (1 − j leff )
eff
rc ∆W is from Wheeler’s formula
1 1 1 1
leff = + + + A CAD formula for Q has been given earlier.
Qd Qc Qsp Qsw
181
Input Impedance
Commonly used fringing formulas
ln 4
∆W =
h (Wheeler formula)
π
W
+ 0.262
ε reff + 0.300 h
∆L =0.412h eff (Hammerstad formula)
εr − 0.258 W + 0.813
h
ε +1 ε −1 1
ε reff r + r
=
2 2 h
1 + 12
W
182
Input Impedance
Next, we derive the Helmholtz equation for Ez.
1
− ∇ × ( ∇ × E=
) J i + jωε ceff E
jωµ
∇ × ( ∇ × E ) = − jωµ J i + ke2 E
∇ ( ∇ ⋅ E ) − ∇ 2 E = − jωµ J i + ke2 E
∇ 2 E + ke2 E =jωµ J i
183
Input Impedance
Hence
jωµ J zi
∇ 2 Ez + ke2 Ez =
Denote ψ ( x, y ) = E z ( x, y )
where
f ( x, y ) = jωµ J zi ( x, y )
184
Input Impedance
Introduce “eigenfunctions” ψmn (x,y):
∇ ψ mn ( x, y ) =
2
−λ ψ mn ( x, y )
2
mn
∂ψ mn
=0C
∂n
mπ x nπ y
ψ mn ( x, y ) = cos cos
e
L e
W
mπ 2 nπ 2
= λmn
2
+
e e
L W
185
Input Impedance
Assume an “eigenfunction expansion”:
ψ ( x, y ) = ∑ Amnψ mn ( x, y )
m,n
Hence
∑ mn mn e ∑ Amnψ mn =
A
m,n
∇ 2
ψ + k 2
f ( x, y )
m,n
∑ mn e mn )ψ mn ( x, y) =
A
m,n
( k 2
− λ 2
f ( x, y )
186
Input Impedance
Next, we multiply by ψ m′n′ ( x, y ) and integrate.
∫ψ
S
mn ( x, y )ψ m′n=
′ ( x, y ) dS 0, (m, n) ≠ (m′, n′)
Denote
< ψ mn ,ψ mn > =∫ψ mn
2
( x, y ) dS
S
We then have
< J zi ,ψ mn > 1
Amn = jωµ 2 2
< ψ mn ,ψ mn > ke − λmn
Ez ( x, y ) = ∑ Amnψ mn ( x, y )
m,n
188
Input Impedance
1
Pin = − ∫ E z ( x, y ) J zi*dV
2V
1
= − h ∫ E z ( x, y ) J zi* dS
2 S
1
= − h ∫ ∑ Amnψ mn J zi* dS
2 S m ,n
1
− h ∑ Amn < ψ mn , J zi* >
=
2 m ,n
189
Input Impedance
Hence
1
− h ∑ Amn < ψ mn , J zi* >
Pin =
2 m ,n
1 < ψ mn , J zi > 1
− h ∑ jωµ
= 2 2
< ψ , J z >
i*
1 <ψ , J i > 2 1
= − h∑ jωµ
mn z
2
2 m ,n < ψ mn ,ψ mn > ke2 − λmn
1
Pin = Z in I in
2
Also,
2
2 Pin
so Z in = 2
I in
190
Input Impedance
Hence we have
<ψ , J i > 2
1 1
2 ∑
Z in = − jωµ h mn z
2
I in m ,n < ψ mn ,ψ mn > ke − λmn
2
∞ ∞
where ∑
m,n
=∑
=m 0=
∑
n 0
191
Input Impedance
Rectangular patch:
mπ x nπ y
ψ mn = cos cos
Le We
2 2
mπ nπ
λ
= +
2
mn
e e
L W
ke = k0 ε rceff
where ε=
eff
rc ε r′ (1 − j leff )
2 mπ x nπ y
Le We
ψ mn ,ψ mn = ∫ cos dx ∫0 cos We dy
2
0 Le
192
Input Impedance
so
We Le
ψ mn ,ψ
= mn (1 + δ m 0 )(1 + δ n 0 )
2 2
1, m = 0
δ m0 =
0, m ≠ 0
ap Wp
( x0e , y0e )
( x0e , y0e )
I in e Wp e Wp
J sz , y ∈ y0 − , y0 +
Wp
2
2 2
− ( y − y0 )
e 2
π
2
Wp
W p = 4a p ( x0e , y0e )
194
Input Impedance
For a uniform strip current assumption, we have:
I in e Wp e Wp
=
J sz , y ∈ y0 − , y0 +
Wp 2 2
3
W p = a p e 4.482 a p
2
Wp
( x0e , y0e )
I in mπ x0e nπ y0e nπ W p
= cos
cos p
W sinc
Wp e e
L W 2We
196
Input Impedance
Hence
mπ x0e nπ y0e nπ W p
ψ mn , J i
z = I in cos cos sinc
e
L e
W 2W e
nπ W p
Note: It is the sinc term that causes the series for Zin to converge.
2 We
197
Input Impedance
Summary of Cavity Model
<ψ , J i > 2
1 1
2 ∑
Z in = − jωµ h mn z
2 2
< ψ ψ > − λ
e mn
I in m ,n , k
mn mn
mπ x0e nπ y0e nπ W p
ψ mn , J i
z = I in cos cos sinc
e
L e
W 2W e
W L
ψ mn ,ψ
= (1 + δ m 0 )(1 + δ n 0 )
e e
mn
2 2
2 2
mπ nπ
λmn
=2
+
e We
L
ke = k0 ε rceff
198
Input Impedance
Summary (cont.)
ε=
eff
rc ε r′ (1 − j leff )
1 1 1 1 1
leff = = + + +
Q Qd Qc Qsp Qsw
199
Input Impedance
Probe Inductance
<ψ , J i > 2
1 1
2 ∑
Z in = − jωµ h mn z
2 2
I in m ,n < ψ mn ,ψ mn > ke − λmn
Note that
(1,0) = term that corresponds to dominant patch mode
(which corresponds to the RLC circuit).
Hence
ψ ,Ji 2
1 1
2 ∑
jX p = − jωµ h
mn z
2 2
ψ ψ
I in ( m ,n ) mn mn e
, k − λmn
≠ (1,0)
200
Input Impedance
RLC Model
where
1 < ψ mn , J z >
2
i
1
Z inm ,n = − jωµ h 2 2
2
< ψ ψ > − λ
e mn
I in , k
mn mn
201
Input Impedance
Rmn
Z m,n
=
1
in
f rmn + jQ f rmn −
f rmn
where
1
Q=
leff and
f 2
f rmn = 1 ψ mn , J i
Pmn = µ h
z
f mn
I in
2
ψ mn ,ψ mn
Pmn
Rmn = 2
k l ωmn
mn eff
202
Input Impedance
2
For f rmn ≈ 1 , we have
Rmn
Z m ,n
≈
1
in
1 + jQ f rmn −
f rmn
203
Input Impedance
Circuit model
(1, 0) (0,1)
(0, 0)
Zin
204
Input Impedance
RLC Model
(1, 0)
jX p
Zin
205