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Thickness Irregularity For Semiconductor TH
Thickness Irregularity For Semiconductor TH
Thickness Irregularity For Semiconductor TH
A simplified theoretical model has been proposed to predict optical parameters such as thickness,
thickness irregularity, refractive index, and extinction coefficient from transmission spectra. The proposed formula has been solved for thickness and thickness irregularity in the transparent region, and
then the refractive index is calculated for the entire spectral region by use of the interference fringes
order. The extinction coefficient is then calculated with the exact formula in the transparent region, and
an appropriate model for the refractive index is used to solve for the extinction coefficient in the
absorption region where the interference fringes disappear. The proposed model is tested with the
theoretical predicted data as well as experimental data. The calculation shows that the approximations
used for solving a multiparameter nonlinear equation result in no significant errors. 2002 Optical
Society of America
OCIS codes: 310.0310, 310.6860, 130.5990.
1. Introduction
2. Theoretical Background
The expression for transmittance, including the reflection from the second interface of the substrate and
the effect of a finite substrate, which is valid for
transparent as well as weakly absorbing substrates,3
is
1 T 123U
,
1 R 321U 2
(1)
(2)
(3)
t 123
t 12t 23 expi2
,
1 r 12r 23 expi
(4)
r 321
r 32 r 21 expi
.
1 r 32r 21 expi
(5)
where the parameters A1, B1, B2, C1, C2, C3, D1, D2,
D3, U, and are given in Appendix A.
3. Solving for d, , n, and
In the transparent region of the transmission spectra, maximum and minimum transmission occur
at15 m, where m 1, 2, 3, . . . ,
4nd m m.
Ni Nj
,
Ni Nj
t ij
2N i
.
Ni Nj
(6)
(11)
(12)
m1
m1
.
m1 m m m1
(13)
(14)
4dn m1 m 1 m1 ,
4dn m1 m 1 m1 .
(15)
3
2
2
3
3
2
3
2
m1
m1
m1
m1
m1
m
m1
m
3
2
2
3
2
2
2
2
2 .
m1 m m1
m1 m1
m1
m1
m m1
m1 m m1
m
m1
m
(16)
(7)
(8)
n 2m, m m4d.
(9)
12
Substitution of Eqs. 29 into Eq. 1 and proceeding with careful and lengthy calculation will result in
an expression for transmittance in the following simplified form,
T
A 1 expd
B 1 exp2d C 1 expd D 1
B 2 exp2d C 2 expd D 2
,
B 2 exp2d C 3 expd D 3
(10)
T m T me 2 T M T Me 2.
(17)
(18)
219
Fig. 2. Calculated transmittance curve of -Si:H versus wavelength , along with interference fringes order m.
(19)
Table 1. Calculated Values of Thickness d and Thickness Irregularity Obtained by Solution of Eq. 18 for Different Values of Interference
Fringes Orders, for -Si:H
Interference
Orders m
M nm
TM
m nm
Tm
6,7
8,9
10,11
12,13
14,15
16,17
18,19
20,21
22,23
1796
1379
1134
973
859
775
710
659
617
0.90690
0.89955
0.88973
0.87727
0.86191
0.84243
0.81564
0.77156
0.68630
1556
1241
1044
911
814
741
683
636
597
0.54687
0.52515
0.50099
0.47532
0.44872
0.42120
0.39211
0.35808
0.31002
d nm
nm
999.63
999.91
999.631
999.764
999.90
1000.58
1000.60
1000.7
1000.83
15.014
15.029
15.048
15.098
15.190
15.432
15.996
17.3682
20.571
Table 2. Comparison between Calculated and Exact Values of the Absorption Coefficient in Different Regions, for -Si:H
nm
500
505
510
515
520
525
530
535
540
545
550
555
560
565
570
exact
nm1
calculated
nm1
0.01000
0.00762
0.00585
0.00452
0.00353
0.00277
0.00219
0.00174
0.00139
0.00112
9.088 104
7.400 104
6.069 104
4.999 104
4.138 104
0.00999
0.00752
0.00584
0.00452
0.00352
0.00276
0.00220
0.00174
0.00139
0.00110
8.996 104
7.558 104
6.301 104
5.024 104
3.875 104
n2 1
2
Em Ed
n 02 1 E m
,
2
2
Em
h 2
Em
h 2
nm
exact
nm1
calculated
nm1
582
595
597
600
617
636
659
683
710
741
776
814
859
911
972
1044
1134
2.682 104
1.783 104
1.670 104
1.468 104
8.714 105
5.109 105
2.844 105
1.643 105
9.454 106
5.390 106
3.090 106
1.835 106
1.078 106
6.410 107
3.890 107
3.516 106
1.467 107
2.695 104
1.878 104
1.592 104
1.319 104
8.841 105
5.138 105
2.901 105
1.473 105
9.262 106
3.297 106
2.902 106
1.105 106
9.538 107
2.759 107
3.659 107
1.878 107
9.973 108
(20)
where Em, Ed are the oscillator and dispersive energies, h is the Planck constant, is the photon fre-
221
Fig. 6. Experimental transmission spectra of ZnTe film with interference fringes order m.
0 exphE e expa b,
(21)
(22)
t n 2 n 3 2 k 22,
Y n 22 n 12 k 22,
Z n 22 n 32 k 22,
n 1 n 3 2 k 32n 1 n 3 2 k 32,
n 3 n 11T s 1T s2 1 12,
U 1
1 2
1 4
2
2T s
4T s2
12
B 2 st,
D 2 2u,
u n 1 n 2 2 k 22,
n 2 n 3 2 k 22,
s n 1 n 2 2 k 22,
223
224
21.
22.
23.
24.
25.