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INTRODUCTION
Bandpass filters in printed circuit configuration are usually realized in the form of
parallel coupled resonators, that are designed according to well established
procedures [1], [2]. In the practical implementation of these filters however,
independently of the dielectric substrate adopted, unsatisfactory results are often
obtained due to a number of technological aspects (inclusion of redundant
transmission line elements, impractical impedance levels, impractical coupling
levels, etc.). Some of these problems were removed by the design method
presented in [3]. The direct application of the image parameter concept to
distributed structures eliminates any transformations from lumped to distributed
prototype and makes it possible to incorporate manufacturing constraints into the
design procedure [4, 5].
The main limitation of the design procedure proposed in [3] is due to the low
impedance level of the coupled line cells. In order to match the filter to the external
impedance level Zo (usually 50 ohm) additional matching sections were
introduced. Although filters with wide passbands were obtained, the passband
insertion loss was still relatively high, generally around 0.2-0.5 dB.
University of Rome "Tor Vergata" Via O. Raimondo, 00173 Rome, Italy Ph. 39-6-24990416 Fax 39-
6-2490519
1085
FILTERS DESIGN
The filters result from the cascade of a number of cells consisting of symmetrical
and/or nonsymmetrical coupled line sections. The automatic design procedure,
implemented on a PC, is as follows:
1. From the passband specifications (frequency band and attenuation) a
symmetrical coupled line cell is synthesized on an image basis [3], with the highest
image impedance level K allowed by the technology. For microstrip, K depends on
the smallest realizable w/h ratio, w being the strip width and h the substrate
thickness.
2. A nonsymmetrical coupled line cell is synthesized from the passband
specifications and with the additional condition of providing the impedance
transformation from K to the prescribed level Zo. The image impedances, Z11 and
Z12, of the 2 port nonsymmetrical lossless coupled line structure are obtained from
the impedance-matrix description, in terms of the parameters of x and C modes [6]
_l__-z_l
Zii
2
Z cl Z2X|CSC20_1
ZleR27- I
~~ZrRoI
(1)
where 0=21l/k is the electrical length of the cell. At the passband center frequency
(0=K/2), the image impedance Z11 has the value
(2)
In the passband, the image impedances are real. In accordance, the fractional
bandwidth B is given by
B3=2[1
Bc
2sin1(2_QCj1)jn
+ ZCthZloc
xu1
tc
(3)
addition to the filter length reduction, the new filter has a passband attenuation of
0.05dB compared to 1.38 dB of the previous filter.
A
0
30
z
w
20
z
9-
4.6
5.5 F(GHZ)
20
215
go
w
I.-
<-
2 a,b shows the results for wide band (37%) filters. In this case the passband
attenuation is reduced only from 0.082 to 0.080 dB, but the filter length is reduced
from 6 to 4X/4. The filter of Fig. 2b consists of only 4 cells, 2 symmetrical with
w=.S15mm, s=.16mm, and 1=9.04mm, and 2 nonsymmetrical with wi=.15mm,
w2=.16mm, s=.18mm, and 1=8.93mm.
Fig.
In order to prove the validity of our analysis, the filters of Fig.1b and 2b were
simulated using a commercial package for linear microwave circuit analysis
including losses and dispersion [11], and later fabricated and measured. The
results are shown in Figs. 3 and 4 respectively. Both simulations and experiments
are in quite good agreement with our predictions.
1088
at
$...,
Wtm
wn
3:29:39
(a)I
I
(a
Nk_
I/
-?-q -a
--r-
FltL
r 2i.U
ee
==-i-
-I
(b'- t j _ " ~ ~ ~ .
DBCESZI
DfrSll'
FIL
IWAdWt.
MMd
UW
FIL
s
=,
T
I
1
7-'
1-
Q--t-n
WlUT
f.
11
IlI /IF1
I
...iL
_-.
1-11,
9.5
lo9
MAG
t/
REF O
d.
c2
START
=-T
t 0000 GHs
STOP
--1.
7. 0000
O;Hs
CH2
-s.m
_ _
s.m
CH1
11
'.
1.
3B(S11)
FIL
- 1ItI_77__
-;.
In
/ _ It
A= =---'S
3."
---"-s-- --
- t -
/_
-9
log MAC
I- -1/-1-
REF 0
-I - -, ,_ 1 -.
8.55C.0Hz
STOP
9. 0000 CHz
Cz
3. 0000 GHz
START
Fig. 4b Expermental
-
response
1089
CONCLUSIONS
A new effective design technique of microstrip bandpass filters has been
presented. The realizability of the filters is guaranteed by the design procedure
which incorporates the technological/manufacturng constraints. Filters with 10% to
40% passband and low passband attenuation (down to 0.05dB) are easily
obtained with a reduced number of elements.
ACKNOWLEDGMENTS
This work was partially supported under CNR (Italy) - INIC (Portugal) agreement.
REFERENCES
[1] G.L. Mathaei, L. Young, and E.M.T. Jones, Microwave Filters, Impedance Matching Networks and Coupling Structures, New York, McGraw-Hill, 1964.
[2] H. Howe, Stripline Circuit Design, Artech House, 1974.
[7] M. Kirshning and R.H. Jansen, "Accurate Wide-Range Design Equations for
the Frequency-Dependent Characteristics of Parallel Coupled Microstrip
Lines", IEEE Trans. Microwave Theory Tech., vol. MTT-32, pp. 83-90, Jan.
1984.
[9] T.C. Edwards, Foundations for Microstrip Circuit Design, John Wiley, 1981.
[10] V.K. Tripathi, "A Dispersion Model for Coupled Microstrips", IEEE Trans.
Microwave Theory Tech., vol. MTT-34, pp. 66-71, Jan. 1986.