6 Circuit Models

NPTEL Online - IIT Delhi 13/03/10 23:04
Circuit Models
We will first describe the Gummel-Poon model that is suitable for use with circuit .The model is based on
an expression for electron current in the base derived in part II in the context of non uniform base doping:
Eq. (1) can be re-written as:
can be broken into five components as explained below:
Eq. (7) makes use quasi-neutrality approximation. The first term can be expressed as
The subscript 'O' refers to depletion widths at zero bias. The first term is simply The second term represents the
change in emitter-base junction charge from its zero bias value, and the third term change in collector-base
depletion charge . Therefore,
The second term in Eq. (7) represents charge due to electrons stored in the base. The electrons, in general, can
come from either emitter or the collector. This term can therefore be written as sum of two diffusion charges:
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The diffusion charges can be expressed in terms of forward and reverse time constants:
Using Eq. (7-12), we obtain
Consider the third tem in the expression above. It can be expressed as:
where is the familiar Early voltage. Similarly, the second term can be written as :
where is the inverse Early voltage.
The fourth term in Eq. (13) can be written as:
Similarly,
Eq. (13) can now be written as:
To summarize, the electron current in the base can be written as:
Thus the modeling of electron current requires five parameters:
The emitter current would be the sum of electron current and a hole current which itself can be modeled as sum of
two components:
The first component with ideality factor unity represents the hole current injected into the emitter, while the second
term can be used to represent the SCR recombination current.
The hole current associated with collector-base junction can similarly be expressed as:
is the current gain in reverse active mode.
Under static conditions, the emitter and collector currents are sum of electron and hole components:
Eq. (33-34) can be represented by the following circuit:
The model can be extended to dynamic conditions by adding the following capacitances to the above model:
Emitter-base junction:
(i) Junction capacitance given by the expression
is the built-in voltage of the emitter-base junction and is the grading coefficient.
(ii) Diffusion capacitance given by the expression:
Collector-base junction:
(i)Junction capacitance given by the expression
(ii)Diffusion capacitance given by the expression:
The effects of high level injection into the collector can be modeled using the following empirical expression:
The complete dynamic model can be represented by the following circuit:
The model can be improved by including emitter, base and collector resistances.
The main model parameters of the BJT in SPICE are described below:
Almost all the parameters listed in the table are part of the Gummel-Poon model equations described earlier. The
emission coefficients (or ideality factors) for forward and reverse currents were taken as unity in the model but they
could be different and are included in SPICE explicitly for this reason.
The base resistance in SPICE is modeled as a variable resistance due to effects such as current crowding. It is
modeled as:
is the resistance at zero bias
is the minimum base resistance that occurs at high currents.
is the current where the base resistance falls halfway to its minimum value.
The parameter is already listed in the table. Two additional parameters need to be inserted to model the variation
of base resistance.
Simple BJT Models
The Gummel-Poon model is unsuitable for "hand analysis" of circuits. For this case, a variety of simplified models are
used. In the forward active mode of operation, a very commonly used model for dc or low frequency large signals is:
The base emitter voltage is often taken between 0.65-0.75.

A model that gives better accuracy but at the expense of being nonlinear is
In saturation mode of operation, circuit analysis is often based on the following simple model:
The base emitter voltage is usually taken slightly larger as compared to the active mode. The collector-emitter voltage
is assumed to be a small value around 200mV.
Small Signal Model
A small signal model for the BJT can be derived simply by linearizing the Gummel-Poon model equations around a
bias point.
The small signal representation of a BJT in active mode of operation is of particular interest because of its
usefulness for analyzing BJT amplifier circuits. For the active mode, the Gummel-Poon model equations in a
simplified form can be written as:
Eq. (45) ignores the inverse Early effect at the emitter junction and the high level injection effects in base and
collector. In Eq. (46), the term involving has been added to model the effects of base collector voltage on the
base current.
A small signal model from the above equations can be obtained by writing all voltages and currents as sum of a dc
component and a small signal (say ac) component:
Substitution of Eq. (47-48) in Eq. (45-46) and simplification by ignoring all nonlinear second order terms yields the
following set of relationships between small signal variables:
Eq. (51-58) describe the well known hybrid-pi small signal representation of the bipolar transistor. The central
approximation made in obtaining these equations was
This approximation is good when small signal base emitter voltage is small compared to the thermal voltage. The
errors involved in making this approximation were discussed in detail in the context of PN junctions.
Eq. (51) and (55) can be represented in the form of a circuit shown below:
The model can be made more accurate by including the series base, emitter and collector resistances. The base and
collector resistances can be modeled as sum of an intrinsic resistance and an extrinsic resistance corresponding to
transistor area outside the intrinsic region.
The junction capacitance corresponding to the reverse biased extrinsic collector-base junction can also be explicitly
incorporated in the model.
The capacitance between the buried layer and the P-type substrate (see the Figure below) can also be included
to improve the accuracy of the model.
Example 6.1 : Determine the hybrid-pi model parameters for a transistor whose description is given below:
refers to collector-base junction area.
Substrate : P-type with doping Take total collector area as 20 times larger than the emitter area.
Take base-emitter voltage to be 0.75 V , base-collector voltage as –2V. and collector current as 1mA.
Solution : The following results can be obtained using the expressions derived earlier:
The emitter junction capacitance is = 32 pF

The intrinsic and extrinsic collector junction capacitances are
The model parameters can now be calculated to be:
The intrinsic base resistance
For a reverse bias of –2 Volts the substrate capacitance between the buried layer in the collector and P-type
substrate can be calculated to be The total capacitance will be

6 Circuit Models

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NPTEL Online - IIT Delhi 13/03/10 23:04

Eq. (1) can be re-written as:

can be broken into five components as explained below:

Using Eq. (7-12), we obtain

where is the inverse Early voltage.

The fourth term in Eq. (13) can be written as:

Eq. (13) can now be written as:

To summarize, the electron current in the base can be written as:

Thus the modeling of electron current requires five parameters:

is the current gain in reverse active mode.

Eq. (33-34) can be represented by the following circuit:

(i) Junction capacitance given by the expression

(ii) Diffusion capacitance given by the expression:

(i)Junction capacitance given by the expression

(ii)Diffusion capacitance given by the expression:

The complete dynamic model can be represented by the following circuit:

is the resistance at zero bias

is the minimum base resistance that occurs at high currents.

Simple BJT Models

The base emitter voltage is often taken between 0.65-0.75.

Small Signal Model

refers to collector-base junction area.

The emitter junction capacitance is = 32 pF

The intrinsic base resistance

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