D170074D

PROFET BTS 432 F2
Smart Highside Power Switch

Features
Product Summary
VLoad dump
80
Vbb-VOUT Avalanche Clamp
58
Vbb (operation)
4.5 ... 42
Vbb (reverse)
-32
RON
38
IL(SCp)
21
IL(SCr)
10
IL(ISO)
11
Load dump and reverse battery protection1)

Clamp of negative voltage at output
Short-circuit protection
Current limitation
Thermal shutdown
Diagnostic feedback
Open load detection in ON-state
CMOS compatible input
Electrostatic discharge (ESD) protection
Loss of ground and loss of Vbb protection2)
Overvoltage protection
Undervoltage and overvoltage shutdown with autorestart and hysteresis
V
V
V
V
m
A
A
A
5
5
Application
C compatible power switch with diagnostic feedback

for 12 V and 24 V DC grounded loads
Most suitable for inductive loads
Replaces electromechanical relays and discrete circuits
SMD
Straight leads
Standard
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection
functions.
R bb
Voltage
Overvoltage
Current
Gate
source
protection
limit
protection
+ V bb
V Logic
Voltage
Charge pump
sensor
Level shifter
Limit for
unclamped
ind. loads
Rectifier
IN
OUT
Temperature
sensor
Open load
ESD
Logic
Load
detection
ST
Short circuit
detection
GND
PROFET
1
Signal GND
1)
2)
Load GND
No external components required, reverse load current limited by connected load.

Additional external diode required for charged inductive loads
Infineon Technologies AG
22.03.99
PROFET BTS 432 F2
Pin
Symbol
Function
GND
Logic ground
IN
Input, activates the power switch in case of logical high signal
Vbb
Positive power supply voltage,

the tab is shorted to this pin
ST
Diagnostic feedback, low on failure
OUT
(Load, L)
Output to the load
Maximum Ratings at Tj = 25 C unless otherwise specified

Parameter
Supply voltage (overvoltage protection see page 3)
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
RI= 2 , RL= 1.1 , td= 200 ms, IN= low or high
Load current (Short-circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC)
Inductive load switch-off energy dissipation,
single pulse
Tj=150 C:
Electrostatic discharge capability (ESD)
(Human Body Model)
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
Symbol
Vbb
Vs3)
Values
IL
Tj
Tstg
Ptot
self-limited
-40 ...+150
-55 ...+150
125
A
C
1.7
2.0
J
kV
-0.5 ... +6
5.0
5.0
V
mA
1
75
tbd
K/W
EAS
VESD
VIN
IIN
IST
63
66.5
Unit
V
V
see internal circuit diagrams page 6...
Thermal resistance
3)
4)
chip - case:
junction - ambient (free air):
SMD version, device on pcb 4):
RthJC
RthJA
VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air.
22.03.99
PROFET BTS 432 F2
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)
IL = 2 A
Tj=25 C: RON
Tj=150 C:
IL(ISO)
Nominal load current (pin 3 to 5)

ISO Proposal: VON = 0.5 V, TC = 85 C
Output current (pin 5) while GND disconnected or
GND pulled up, VIN= 0, see diagram page 7,
Tj =-40...+150C
Turn-on time
to 90% VOUT:
Turn-off time
to 10% VOUT:
RL = 12 , Tj =-40...+150C
Slew rate on
10 to 30% VOUT, RL = 12 , Tj =-40...+150C
Slew rate off
70 to 40% VOUT, RL = 12 , Tj =-40...+150C
Operating Parameters
Operating voltage 5)
Tj =-40...+150C:
Undervoltage shutdown
Tj =-40...+150C:
Undervoltage restart
Tj =-40...+150C:
Undervoltage restart of charge pump
see diagram page 12
Tj =-40...+150C:
Undervoltage hysteresis
Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Tj =-40...+150C:
Overvoltage restart
Tj =-40...+150C:
Overvoltage hysteresis
Tj =-40...+150C:
6
)
Overvoltage protection
Tj =-40C:
Ibb=40 mA
Tj =25...+150C:
Standby current (pin 3)
Tj=-40...+25C:
VIN=0
Tj=150C:
Leakage output current (included in Ibb(off))
VIN=0
Operating current (Pin 1) 7), VIN=5 V
5)
6)
7)
--
30
38
55
11
70
--
--
--
mA
ton
toff
50
10
160
--
300
80
dV /dton
0.4
--
2.5
V/s
-dV/dtoff
--
V/s
Vbb(on)
Vbb(under)
Vbb(u rst)
Vbb(ucp)
4.5
2.4
---
---6.5
42
4.5
4.5
7.5
V
V
V
V
Vbb(under)
--
0.2
--
Vbb(over)
Vbb(o rst)
Vbb(over)
Vbb(AZ)
--0.2
-67
12
18
6
52
----
V
V
V
V
25
60
--
IL(off)
42
42
-60
63
----
IGND
--
1.1
--
mA
IL(GNDhigh)
Ibb(off)
At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT Vbb - 2 V
see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load.
Add IST, if IST > 0, add IIN, if VIN>5.5 V
22.03.99
PROFET BTS 432 F2
Symbol
Protection Functions
Initial peak short circuit current limit (pin 3 to 5) 8),
IL(SCp)
( max 400 s if VON > VON(SC) )
Tj =-40C:
Tj =25C:
Tj =+150C:
Repetitive short circuit current limit
IL(SCr)
Tj = Tjt (see timing diagrams, page 10)
Short circuit shutdown delay after input pos. slope
VON > VON(SC),
Tj =-40..+150C: td(SC)
Values
min
typ
max
Unit
--7
-21
--
35
---
10
--
80
--
400
VON(CL)
--
58
--
VON(SC)
Tjt
Tjt
EAS
ELoad12
ELoad24
-150
---
8.3
-10
--
---1.7
1.3
1.0
V
C
K
J
---
-120
32
--
2
2
---
900
750
mA
min value valid only, if input "low" time exceeds 30 s
Output clamp (inductive load switch off)

at VOUT = Vbb - VON(CL), IL= 30 mA
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation 9),
Tj Start = 150 C, single pulse
Vbb = 12 V:
Vbb = 24 V:
Reverse battery (pin 3 to 1) 10)
Integrated resistor in V bb line
Diagnostic Characteristics
Open load detection current
(on-condition)
8)
-Vbb
Rbb
Tj=-40 C: IL (OL)
Tj=25..150C:
Short circuit current limit for max. duration of 400 s, prior to shutdown (see td(SC) page 4)
While demagnetizing load inductance, dissipated energy in PROFET is EAS= VON(CL) * iL(t) dt, approx.
VON(CL)
2
EAS= 1/2 * L * IL * (
), see diagram page 8
VON(CL) - Vbb
10) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current IGND of 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under
these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional
external GND-resistor (150 ). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
9)
22.03.99
PROFET BTS 432 F2
Symbol
Values
min
typ
max
VIN(T+)
1.5
--
2.4
VIN(T-)
1.0
--
--
-1
0.5
--
-30
V
A
10
25
50
80
200
400
td(ST)
350
--
1600
VST(high)
VST(low)
5.4
--
6.1
--
-0.4
Input and Status Feedback11)

Input turn-on threshold voltage
Tj =-40..+150C:
Input turn-off threshold voltage
Tj =-40..+150C:
VIN(T)
IIN(off)
Input threshold hysteresis

Off state input current (pin 2)
VIN = 0.4 V:
On state input current (pin 2)
VIN = 3.5 V: IIN(on)
Status invalid after positive input slope

(short circuit)
Tj=-40 ... +150C:
Status invalid after positive input slope
(open load)
Tj=-40 ... +150C:
Status output (open drain)
Zener limit voltage Tj =-40...+150C, IST = +1.6 mA:
ST low voltage Tj =-40...+150C, IST = +1.6 mA:
11)
td(ST SC)
Unit
If a ground resistor RGND is used, add the voltage drop across this resistor.
22.03.99
PROFET BTS 432 F2
Truth Table
Input-
Output
level
level
432
D2
432
E2/F2
432
I2
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
H
H
H
L
H
L
H
H (L13))
L
L
L14)
L14)
L
L
H
H
H
L
H
L
H
H (L13))
L
L
H
H
H
H
H
H
L
H
H
L
L
H
L
L
L14)
L14)
L
L
Normal
operation
Open load
Short circuit
to GND
Short circuit
to Vbb
Overtemperature
Undervoltage
Overvoltage
Status
12)
H
L
L
H
H
L
L
L
L
L
L
L = "Low" Level
H = "High" Level
Status output
Terms
+5V
Ibb
I IN
IN
IL
VST
IN
OUT
PROFET
I ST
R ST(ON)
Vbb
VON
GND
ST
ESDZD
GND
bb
R
IGND
ESD-Zener diode: 6.1 V typ., max 5 mA;

RST(ON) < 250 at 1.6 mA, ESD zener diodes are not
designed for continuous current
VOUT
GND
Short Circuit detection
Input circuit (ESD protection)

R
IN
ST
Fault Condition: VON > 8.3 V typ.; IN high
I
+ V bb
ESDZDI1 ZDI2
V
ON
GND
OUT
Logic
unit
ZDI1 6.1 V typ., ESD zener diodes are not designed for
continuous current
12)
13)
14)
Short circuit
detection
Power Transistor off, high impedance

Low resistance short Vbb to output may be detected by no-load-detection
No current sink capability during undervoltage shutdown
22.03.99
PROFET BTS 432 F2
Inductive and overvoltage output clamp
GND disconnect
+ V bb
V
Z
V
IN
ON
Vbb
PROFET
OUT
bb
IN
ST
GND
OUT
GND
1
ST
V
GND
VON clamped to 58 V typ.

Any kind of load. In case of Input=high is V OUT VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
Overvolt. and reverse batt. protection
GND disconnect with GND pull up

+ V bb
R IN
R bb
IN
IN
PROFET
Logic
V
R ST
Vbb
ST
GND
OUT
OUT
ST
GND
PROFET
1
V
R GND
bb
V
IN ST
GND
Signal GND
Rbb = 120 typ., VZ +Rbb*40 mA = 67 V typ., add

RGND, RIN, RST for extended protection
Any kind of load. If V GND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Open-load detection
Vbb disconnect with charged inductive

load
ON-state diagnostic condition: VON < RON * IL(OL); IN

high
3
high
+ V bb
IN
Vbb
PROFET
GND
1
V
OUT
Logic
unit
ST
VON
ON
OUT
bb
Open load
detection
3
high
2
IN
Vbb
PROFET
OUT
ST
GND
1
bb
22.03.99
PROFET BTS 432 F2
Inductive Load switch-off energy

dissipation
E bb
E AS
IN
PROFET
ELoad
Vbb
ST
OUT
EL
GND
ER
Energy dissipated in PROFET EAS = Ebb + EL - ER.

2
ELoad < EL, EL = 1/2 * L * I L
22.03.99
PROFET BTS 432 F2
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection , protection against loss of ground
Type
Logic version
BTS 432D2 432E2 432F2 432I2
Overtemperature protection
Tj >150 C, latch function 15)16)
Tj >150 C, with auto-restart on cooling
Short-circuit to GND protection
switches off when VON>8.3 V typ.15)
(when first turned on after approx. 200 s)
X
X
Undervoltage shutdown with auto restart
Overvoltage shutdown with auto restart
Open load detection

in OFF-state with sensing current 30 A typ.
in ON-state with sensing voltage drop across
power transistor
Status feedback for

overtemperature
-17)
-17)
-17)
open load
undervoltage
overvoltage
short circuit to GND

short to Vbb
Status output type

CMOS
Open drain
Output negative voltage transient limit

(fast inductive load switch off)
to Vbb - VON(CL)
Load current limit

high level (can handle loads with high inrush currents)
medium level
X
low level (better protection of application)
15)
Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
16) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
17) Low resistance short V to output may be detected by no-load-detection
bb
22.03.99
PROFET BTS 432 F2
Timing diagrams
Figure 3a: Turn on into short circuit,
Figure 1a: Vbb turn on:
IN
IN
t d(bb IN)
V
bb
ST
OUT
OUT
td(SC)
A
I
ST open drain
A
in case of too early V IN=high the device may not turn on (curve A)
td(bb IN) approx. 150 s
td(SC) approx. 200s if V bb - VOUT > 8.3 V typ.
Figure 3b: Turn on into overload,
Figure 2a: Switching an inductive load
IN
IN
td(ST)
ST
IL
I L(SCp)
I L(SCr)
*)
OUT
I
ST
IL(OL)
t
Heating up may require several milliseconds , V bb - VOUT < 8.3 V

typ.
*) if the time constant of load is too large, open-load-status may

occur
10
22.03.99
PROFET BTS 432 F2
Figure 3c: Short circuit while on:
Figure 5a: Open load: detection in ON-state, turn

on/off to open load
IN
IN
ST
ST
V OUT
t
d(ST)
V
OUT
IL
**)
open
**) current peak approx. 20 s
Figure 4a: Overtemperature,
Figure 5b: Open load: detection in ON-state, open

load occurs in on-state
Reset if (IN=low) and (Tj<Tjt)
IN
IN
td(ST OL1)
ST
ST
t d(OL ST2)
V
OUT
OUT
normal
open
t
td(ST OL1) = tbd s typ., t d(ST OL2) = tbd s typ
*) ST goes high , when VIN=low and Tj<Tjt
normal
11
22.03.99
PROFET BTS 432 F2
Figure 6a: Undervoltage:
Figure 7a: Overvoltage:
IN
IN
V bb
Vbb
V ON(CL)
Vbb(over)
V bb(o rst)
Vbb(u cp)
V
bb(under)
bb(u rst)
OUT
V OUT
ST open drain
ST
Figure 6b: Undervoltage restart of charge pump

VON [V]
VON(CL)
V on
off
V
off
bb(u rst)
V
V
bb(under)
bb(over)
bb(o rst)
bb(u cp)
on
V bb
Vbb [V]
charge pump starts at Vbb(ucp) =6.5 V typ.
12
22.03.99
PROFET BTS 432 F2
Package and Ordering Code

All dimensions in mm
Standard TO-220AB/5
BTS 432 F2
Ordering code
TO-220AB/5, Option E3043 Ordering code

BTS 432 F2 E3043
Q67060-S6203-A2
Q67060-S6203-A4
SMD TO-220AB/5, Opt. E3062 Ordering code

BTS432F2 E3062A T&R:
13
Q67060-S6203-A6
22.03.99
PROFET BTS 432 F2
Edition 22.03.99
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 Mnchen, Germany
Infineon Technologies AG 2000.

All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address
list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
14
22.03.99

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PROFET BTS 432 F2

Smart Highside Power Switch

Load dump and reverse battery protection1)

C compatible power switch with diagnostic feedback

No external components required, reverse load current limited by connected load.

PROFET BTS 432 F2

Input, activates the power switch in case of logical high signal

Positive power supply voltage,

Diagnostic feedback, low on failure

Output to the load

Maximum Ratings at Tj = 25 C unless otherwise specified

see internal circuit diagrams page 6...

PROFET BTS 432 F2

at Tj = 25 C, Vbb = 12 V unless otherwise specified

Load Switching Capabilities and Characteristics

Nominal load current (pin 3 to 5)

PROFET BTS 432 F2

Parameter and Conditions

at Tj = 25 C, Vbb = 12 V unless otherwise specified

min value valid only, if input "low" time exceeds 30 s

Output clamp (inductive load switch off)

PROFET BTS 432 F2

Parameter and Conditions

at Tj = 25 C, Vbb = 12 V unless otherwise specified

Input and Status Feedback11)

Input threshold hysteresis

On state input current (pin 2)

VIN = 3.5 V: IIN(on)

Status invalid after positive input slope

PROFET BTS 432 F2

ESD-Zener diode: 6.1 V typ., max 5 mA;

Short Circuit detection

Input circuit (ESD protection)

Fault Condition: VON > 8.3 V typ.; IN high

Power Transistor off, high impedance

PROFET BTS 432 F2

Inductive and overvoltage output clamp

VON clamped to 58 V typ.

Overvolt. and reverse batt. protection

GND disconnect with GND pull up

Rbb = 120 typ., VZ +Rbb*40 mA = 67 V typ., add

Vbb disconnect with charged inductive

ON-state diagnostic condition: VON < RON * IL(OL); IN

PROFET BTS 432 F2

Inductive Load switch-off energy

Energy dissipated in PROFET EAS = Ebb + EL - ER.

ELoad < EL, EL = 1/2 * L * I L

PROFET BTS 432 F2

BTS 432D2 432E2 432F2 432I2

Undervoltage shutdown with auto restart

Overvoltage shutdown with auto restart

Open load detection

Status feedback for

short circuit to GND

Status output type

Output negative voltage transient limit

Load current limit

low level (better protection of application)

PROFET BTS 432 F2