UniKL BRITISH MALAYSIAN INSTITUTE

INTRODUCTION TO ELECTRONICS
(BEB 11103)
S2`2015

LAB PRACTICAL 2
DESIGN A BJT AMPLIFIER
Student Name:

ID:

Group:

ASSESSORS COMMENT:

Task No.

MARKS:

Unit Content & Assessment Objectives

Marks

Operation of Power Supply

Pre-Lab
1-3
4-5
Lab-R

To design an amplifier using BJT Transistor

To verify and test the designed amplifier
To build and test the designed amplifier
To demonstrate the amplifier operation and characteristic
To analyse and summarize the investigation in Technical Report
Practical Test

15
10
20
10
20
25

TOTAL
PERCENTAGE

Group
No of Student
Tutor

L02-T01
24
MOAA

L02-T02
7
MOAA

L01-T03
18
MOAA

Verified by: Subject Leader [MOAA]

Prepared by: [MOAA] HOS verification
I hereby declare that all my team members have agreed with this
assessment. All team members are certain that this assessment complies
with the syllabus.

100
10%

Total
49
1
QAS verification

Signature: ____________________________
Date

: ____________________________

Objectives
1. To Investigate three different configuration of BJT amplifier
2. To verify and test the design of the amplifier
3. To analyse the percentage of accuracy between calculation and actual measurement

Pre-Lab Assignment
Derive the equations for VC, VB, VE, VBE , VCE , IC, IB and IE. for the circuit shown in Figures 4-1
through 4-3

[15 marks]

In-Lab Activites
1. Build the Fixed Bias circuit shown in Figure 4-1 on your protoboard

2. By using the DMM, measure each of the transistor node DC voltages (VC, VB, VE, VBE and VCE)
and determine/calculate all the currents (IC, IB and IE). Claculate and then calculate .
3. Set Function generator to produce Sinewave signal Vp-p 10 mV. Apply the signal to the circuit
and use Oscilloscope to probe the voltage signals at Base and Emmiter.

4. Repeat steps 1 and 2 for the Emmiter Stabilised Bias circuit as shown in Figure 4-2
5. Set Function generator to produce Sinewave signal Vp-p 10 mV. Apply the signal to the circuit
and use Oscilloscope to probe the voltage signals at Base, Collector and Emmiter.
6. Repeat Step 5 for the circuit without capacitor at Emmiter.

7. Repeat steps 1 and 2 for Voltage Divider circuit shown in Figure 4-3
8. Set Function generator to produce Sinewave signal Vp-p 10 mV. Apply the signal to the circuit
and use Oscilloscope to probe the voltage signals at Base, Collector and Emmiter.
9. Repeat Step 8 for the circuit without capacitor at Emmiter.

10. Record all your results in Table 4-1

Results

11. Record all your resistor biasing values as follow :

[10 marks]

[20 marks]

[25 marks]
5

LAB 2 Report
1. By using only the derived equation and VBE (pre-lab) calculate VC, VB, VE and VCE, IC, IB and
IE and compare with in-lab activity results.
2. Calculate the percentage relative error between your measured values and your calculated values.
3. Compare the phase of the probe signals at base, emmiter and collector

Fixed Bias Circuit

Emitter Stabilised Bias Circuit

Voltage Divider Bias Circuit

[20 marks]

Practical Test 2 (Each Question carries 5 marks)

1. Draw two biasing configuration for BJT amplifier
2. Explain the function of coupling capacitor at base, collector and emitter for voltage divider BJT
configuration
3. Derive VCE for voltage divider BJT configuration
4. Explain the position of Q point in voltage divider BJT configuration
5. Compare the phase for Output and Input signals for voltage divider BJT configuration at Base,
Emmiter and Collector