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Utmost TFT Training Part1
Utmost TFT Training Part1
Utmost TFT Training Part1
UTMOST
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Agenda
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Utmost Installation
Install the Utmost package
Download the binary packaging
Mkdir ../target path/Silvaco
Cd ../target path/Silvaco
Gunzip < /cdrom/utmost.tar.gz.|tar xf -
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ID/VGS@VDS point 51
Fill in the vgs_start_vg
vgs_stop_vg
vds_start_vg
vds_step_vg
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Naming
.s for SPICE files
.l for SPICE
library files
.c for SPICE files
used in circuits
Printing file
Deleting file
Save file
Click Setup&log
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Port setup
!
!
!
!
!
!
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UTMOST
Baud rate
Port name (default by computer)
Check communication by
POLLING button
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Technology:
to set according to the UTMOST technology currently in use, such TFT or
MOSFET
Graphics Control
Set to Manual, UTMOST displays a plot and wait for the Return button to
be pressed before continuing.
Set to No Graph, UTMOST does not display graphs.
Set to Pause, UTMOST will wait a time before display the next
measurement.
The waiting time can be set by entering a value in the Pause Wait Time
text field.
MACRO Modeling
UTMOST
Set to Enabled, UTMOST uses the netlist and models provided in the
VYPER control file.
Set to Disabled, UTMOST uses
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Repeated Measurement
Enabled to ensure all the device can be correctly measured
Disabled will skip the device which has the temporary files (stored data) existed.
Temperature Modeling
Enabled, UTMOST to drive connected computer-controlled temperature ovens
Disabled, UTMOST assumes that all measurements are performed at room (nominal)
gds/gm Model
It controls how the gds/gm data is produced.
If set to Computed, UTMOST calculates the gds/gm data from the Ids data measured.
There are four different methods:Lagrange 5-point and 3-point methods, and the Linear 5-point and 3-point
methods
DC Long Delay:
defines a delay between measurements if the device needs time to cool etc.
AC Read Delay:
defines a delay between the reading the measured AC points from the output buffer of the network analyzer.
AC Sweep Delay:
Defines the delay necessary to measure all AC points for each s-parameter family
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Replot
displays the Replot screen. This screen allows previously simulated or
measured plots to be displayed. To view a plot, select the relevant line of
the plot list and click on the Apply button.
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Repeated Measurement
Control
options
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Fit Sections
The number in the Fit Sections button shows the number of subsets of measurement
data that will be fitted for the current routine.
Simulation
If the Simulation button is Enabled for a routine, simulation is performed automatically
after the measurement and after fitting and local optimization,
the Simulation button is equivalent to selecting Simulation from the Options menu of the
Graphics screen
Global Optimization
UTMOST
If the Global Optim. button is Enabled for a routine, the optimizer is invoked
automatically when a measurement is completed.
Enabling the Global Optim. button is equivalent to selecting Global Optim. from the
Options menu of the Graphics screen.
If the Global Optim. button is Disabled, optimization must be done manually from the
Graphics screen. The UTMOST optimizer is not available for all routines. The Routine
Attributes screen, defined as part of the Setup and Results screen, can be used to check
- 49routine.
if optimization is allowed for a given
Plotter
If the Plotter button is Enabled, and PostScript is selected in the hardware configuration
screen, when a measurement is completed UTMOST automatically generates a
PostScript file.
To create a PostScript file with a different name, enter the new filename in the
PostScript/HPGL text field in the Routine Control screen.
Enabling the Plotter button is equivalent to clicking on the Plot button on the Graphics
screen.
Measurement Sections
The Measurement Sections text field defines the number of curves that will be measured
for the current routine. For example, when measuring IDS for different values of VDS, it is
common to produce a family of curves by varying VGS for each set of VDS values. The
Measurement Sections field gives the number of VGS increments.
Optimizer Setup
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The Optimizer Setup button opens the Optimizer Setup/Status screen. This screen is
used to assign values to variables- 50
required
by the optimizer.
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Result
The Result button opens the Result screen.
This screen displays which parameters are extracted by the current routine using regular
fitting techniques.
enter a number in the appropriate Extracted text field.
enter the desired values in the Minimum and Maximum text fields.
save a parameter value in a SPAYN or List file, click on the SPAYN or List button.
If a parameter is marked for saving, a flag is displayed next to the parameter name. To
unmark a parameter, click on the button again.
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Fit
Selecting Fit invokes the UTMOST fitting algorithm for parameter extraction for the
given routine.
Simulate
The Simulate option causes UTMOST to simulate data for the current routine.
Global Optimize
The Global Optimization is invoked by selecting the Global Optim. option.
Local Optimize
The Local Optimization is invoked by selecting the Local Optim. option.
Exchange
The Exchange option allows the user to swap measured and simulated data.
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Emulator
The Emulator option opens the Emulator 4145 screen. This screen
emulates the function of the HP4145 instrument in its interactive
measurement mode.
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Model selection
Model layout design and manufacturing
Model IV/CV/Timing curves measurement
Model parameters extraction
Model parameters QA
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TFT Models
N+ a-Si
Passivation
Intrinsic a-Si
Source
Provides 4 models :
N+ a-Si
Drain
Gate
Conducting channel
Gate insulator
Glass substrate
Gate
Drain
gate oxyde
Source
n+
poly-Si
n+
SiO2 coating
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PA-SiNx
DRAIN
ITO
n+ a-Si
SOURCE
a-Si
GATE
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GLASS
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G-SiNx
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Model selection
Model layout design and manufacturing
Model IV/CV/Timing curves measurement
Model parameters extraction
Model parameters QA
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Model selection
Model layout design and manufacturing
Model IV/CV/Timing curves measurement
Model parameters extraction
Model parameters QA
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IV curve measurement
IDS/VGS( Drain current)
VGS sweep over a defined range@ a set of VDS
IDS/VDS
VDS sweep over a defined range @ a set of VGS
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CV Measurement
CGDO( Gate to Drain Overlap Capacitance)
Gate to Drain Voltage sweep from big negative to big positive value. The
overlap typical value is 1200microns, capacitance typical value is 25 to
70 pf.
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Model selection
Model layout design and manufacturing
Model IV/CV/Timing curves measurement
Model parameters extraction
Model parameters QA
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Device Characterization
Sub-Threshold
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10u
Topmost curve: Vgs = 20 V; Step: -2.5 V
8u
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-8
-10
Vds = 10V
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6u
4u
2u
0u
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-30
-20
-10
10
20
30
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Saturation Region
Leakage
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10
20
Linear Region
30
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Data Acquisition
IDS vs. VDS@VGS (constant)
The number of VGS voltage steps is defined in the Routine Control screen
using the Measurement Sections field.
A TFT device is connected according to the SMU definitions, and the VDS
and VGS voltages defined.
Typically, TFT devices are used in the forward bias mode. When this is the
case, the VDS drain voltage is swept from 0V to the VDSmax. If the TFT
device is used in forward and reverse bias mode, then the VDS drain voltage
can be swept from -VDSmax to +VDSmax.
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Data Acquisition
IDS vs VGS @ VDS (constant)
The number of VDS voltage steps is defined in the Routine
Control screen using the Measurement Sections text field.
The TFT is connected according to SMU definitions, and the VDS
and VGS voltages are defined.
Typically the TFT will be measured from weak-inversion to
strong-inversion with the gate bias being swept from a negative
to a positive voltage in the case of an n-type TFT device.
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Data Acquisition
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A data set is obtained as the drain current values for one gate
voltage sweep.
A TFT device is connected according to the SMU definitions, and
the gate voltage VGS is swept over a specified voltage range
while the drain voltage VDS is kept constant.
Threshold voltage measurement and extraction is typically
performed on a large TFT device (typically 25/25).
The model parameter VTO represents the threshold voltage
value at 0V of substrate bias
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Data Acquisition
A data set is obtained as the drain IDS current values for one
drain voltage VDS sweep, while the gate voltage VGS is kept
constant.
The VGS voltage value is typically way between VTO and 0V.
The model parameter LAMBDA models the channel length
modulation effects in a TFT device. Due to this effect, a TFT
device has a finite output conductance in the saturation region.
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Data Acquisition
The forcing drain current should always be swept logarithmically across a
specified current range while the drain to source voltage is measured.
The SHORT integration time option and the LOG10 logarithmic sweep
option are recommended in order to ensure minimum heat generation
inside the device during the measurements.
The breakdown voltage measurements are destructive if not handled
properly.
Set the current compliance properly and carefully to avoid device
destruction.
The value of BVDO is extracted at a given drain current I_to_fit. BVDO
can be extracted over temperature for process control purposes. No
SPICE parameter is extracted.
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Data Acquisition
The user enters the VDD_start, VDD_step and #_of_steps for the
data collection.
Drain terminal should be connected to VDD, and Source terminal
should be connected to GND of the ring oscillator circuit.
The Output signal will be measured by the oscilloscope, and
UTMOST will read the "period" for each VDD step from the scope.
After the completion of all VDD steps, the Tpd vs VDD data will
be displayed.
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Model Generation
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Model selection
Model layout design and manufacturing
Model IV/CV/Timing curves measurement
Model parameters extraction
Model parameters QA
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Model QA
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UTMOST
Parameter
Description
ACM
Units
DEL
Default
0
XJ
0.15e-6
LD(DLAT,LATD)
0.75*XJ
WD
LDIF
HDIF
XL(LDEL)
XW(WDEL)
DL(DL0)
um
DW(DW0)
um
GEO
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Description
Default
Units
Ohm(ACM=0)
Ohm/sq (ACM =1,2,3)
Ohm(ACM=0)
Ohm/sq (ACM =1,2,3)
Ohm
RD
RS
RDC
RSC
Ohm
RSH
Ohm/sq
0
0
0
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Parame ter
Descr iption
Units
Default
CGDO
F/m
CGSO
F/m
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Description
Default
Units
Ohm(ACM=0)
Ohm/sq (ACM =1,2,3)
Ohm(ACM=0)
Ohm/sq (ACM =1,2,3)
Ohm
RD
RS
RDC
RSC
Ohm
RSH
Ohm/sq
0
0
0
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Description
Units
Self-Heating Selector
Thermal Resistance
Thermal Capacitance
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Default
0
C/W
W.s/C
0
0
MOSFET
MOSFET models
models levels
levels 4,
4, 5,
5, 7,
7, 10,
10, and
and 69
69
Leff=L*SCALE*LMLT-2LD
(
if
DL
is
not
Leff=L*SCALE*LMLT-2LD ( if DL is not define)
define)
if
DL
is
not
specified,
if DL is not specified,
Leff=L*SCALE*LMLT+Xl*SCALM
Leff=L*SCALE*LMLT+Xl*SCALM -2LD*SCALE
-2LD*SCALE
if
DW
is
define,
if DW is define,
Weff=W*SCALE*WMLT-WD,
Weff=W*SCALE*WMLT-WD, Weff*=Weff.
Weff*=Weff.
If
DW
is
not
specified,
If DW is not specified,
Weff=W*SCALE*WMLT+XW*SCALM-2WD*SCALM
Weff=W*SCALE*WMLT+XW*SCALM-2WD*SCALM
Weff*=W*SCALE*WMLT+XW*SCALE
Weff*=W*SCALE*WMLT+XW*SCALE
MOSFET
MOSFET models
models levels
levels 1,
1, 2,
2, 3,
3, 6,
6, and
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Leff=L*SCALE*LMLT+XL*SCALM
Leff=L*SCALE*LMLT+XL*SCALM
-2(LD+DEL)*SCALE
-2(LD+DEL)*SCALE
Weff=W*SCALE*WMLT*XW*SCALM
Weff=W*SCALE*WMLT*XW*SCALM
-2*WD*SCALM
-2*WD*SCALM
Weff*=W*SCALE*WMLT+XW*SCALM
Weff*=W*SCALE*WMLT+XW*SCALM
(( for
for overlap
overlap cap
cap calculation
calculation ))
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IfIf AD
AD is
is unspecified
unspecified (ACM=2,
(ACM=2, ACM=3(GEO=0,2))
ACM=3(GEO=0,2))
ADeff=(2*HDIF*SCALE*WMLT*(Weff*))*M
ADeff=(2*HDIF*SCALE*WMLT*(Weff*))*M
IfIf ACM=2
ACM=2 or
or ACM
ACM =3
=3 and
and GEO=1,
GEO=1, 33
ADeff=(HDIF*SCALM*WMLT*(Weff*))*M
ADeff=(HDIF*SCALM*WMLT*(Weff*))*M
else
else
ADeff=(AD*SCALE^2*WMLT^2)*M
ADeff=(AD*SCALE^2*WMLT^2)*M
IfIf ACM
ACM =3
=3 and
and GEO=1,
GEO=1, 33
PDeff=(2HDIF*WMLT+(Weff*))*M
PDeff=(2HDIF*WMLT+(Weff*))*M
else
else PDeff=(PD*SCALE*WMLT)*M
PDeff=(PD*SCALE*WMLT)*M
IfIf AS
AS is
is unspecified
unspecified (( ACM=2,
ACM=2, or
or ACM=3
ACM=3 (GEO=0,1))
(GEO=0,1))
ASeff=(2*HDIF*SCALM*WMLT*(Weff*))*M
ASeff=(2*HDIF*SCALM*WMLT*(Weff*))*M
ifif ACM=3,
ACM=3, and
and GEO=2,3
GEO=2,3
ASeff=(HDIF*SCALM*WMLT*(Weff*))*M
ASeff=(HDIF*SCALM*WMLT*(Weff*))*M
else
else
ASeff=(AS*SCALM^2*WMLT^2)*M
ASeff=(AS*SCALM^2*WMLT^2)*M
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IfIf PS
PS is
is unspecified
unspecified (( ACM=2,
ACM=2, or
or ACM=3
ACM=3 (GEO=0,1))
(GEO=0,1))
PSeff=(4*HDIF*SCALM*WMLT+2(Weff*))*M
PSeff=(4*HDIF*SCALM*WMLT+2(Weff*))*M
ifif ACM=3,
ACM=3, and
and GEO=2,3
GEO=2,3
PSeff=(2HDIF*SCALM*WMLT+(Weff*))*M
PSeff=(2HDIF*SCALM*WMLT+(Weff*))*M
else
else PSeff=(PS*SCALM*WMLT)*M
PSeff=(PS*SCALM*WMLT)*M
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IfIf NRS
NRS is
is specified,
specified,
( LD LDIF ) SCALM
* RS
Weff *
RSeff !
M
NRS * RSH
RSC )
else,
else,
( HDIF * SCALM * RSH
RSeff ! RSC
( LD LDIF ) * SCALM * RS
Weff *
M
IfIf NRD
NRD is
is specified,
specified,
( LD LDIF ) SCALM
* RS
Weff *
RDeff !
M
NRD * RSH
RDC )
else,
else,
( HDIF * SCALM * RSH
RDeff ! RDC
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( LD LDIF ) * SCALM * RD
Weff *
M