Professional Documents
Culture Documents
Frequency Response of BJT Amplifier
Frequency Response of BJT Amplifier
COLLEGE OF ENGINEERING
XAVIER UNIVERSITY- ATENEO DE CAGAYAN
Names of Members:
Leo Marcelo P. Villalba
Joeune B. Merencillo
Arnel Charles Ed Go
Aira Jean Damasing
Primo B. Revilla III
Group Number: 3
Subject and Section: ECE 32- EC
Date Performed:
November 12, 2015
Date of Report Submitted:
November 19, 2015
Name of Intsructor:
Engr. McAlvin Neri
Rating:
Introduction, Objective & Theory (20%)
Methods/Laboratory Performance (20%)
Data and Results (20%)
Discussions & Conclusions (20%)
Organization (20%)
Total (100%)
______
______
______
______
______
______
Remarks:
___________________________________________________________________
___________________________________________________________________
___________________________________________________________________
___________________________________________________________________
INTRODUCTION
Bipolar junction transistor are commonly used as an amplifier. As an amplifier,
BJT (bipolar junction transistor) uses coupling capacitors and bypass capacitors in
order to separate dc signal to ac signal. The coupling and bypass capacitors are
placed at the source, output and parallel to the emitter stabilizer resistor. In the
analysis of frequency response, we look at the reactance as a behavior of this
capacitors, see (Eqn. 1).
1
2
(Eqn. 1)
In figure 1, a common voltage divider configuration had been used with CIN,
COUT, and CE, as coupling and bypass capacitor, contributes to the lower frequency
cutoff of the voltage gain of the amplifier. While on high frequency cutoff, the parasitic
or capacitance developed by the PN junctions between collector, base, and emitter
damps the signal.
PROCEDURE
The following materials were used in the experiment; Module EL-2-N, power
supply, function generator, 2 multimeters, and oscilloscope.
In the following experiment, the dc voltage (Vcc) is set to 14 volts while the ac
voltage (Vrms) is set to 6 Vrms having a peak value of 8.5 Vp. The voltage across the
transistor (VCE) is set to 6 volts and collector current (IC) to 10 mA by adjusting the
variable resistors R1 and Rc in the module, see figure 2.
the frequency has no uniform calibration. The high frequency cutoff cannot be
achieved too due to the limitations of the frequency the function generator can
produce.
DATA AND RESULTS
The following representation of data was plotted using MatLab with semilog plot
setting in order to cover from the low frequency up to the 200 kHz range. The
frequency starts at 15 Hz and ends with 225 kHz due to function generators
limitations.
Table 1. Low frequency response of BJT amplifier
with Cin = Cout = CE = 101 uF.
Frequency (Hz)
15
20
25
30
35
36
37
40
50
VIN (mV)
211
213
214
214
215
216
216
216
216
VOUT (mV)
105
134
162
186
205
215
220
240
293
AV
0.498 0.629 0.757 0.869 0.953 0.995 1.019 1.111 1.356
AvdB
-6.06 -4.03 -2.42 -1.22 -0.418 -0.044 0.164 0.914 2.65
Table 2. Low frequency response of BJT amplifier with
Cin = 1 uF, Cout = CE = 101 uF.
Frequency (Hz)
VIN (mV)
VOUT (mV)
AV
AvdB
15
20
30
31
33
35
214
215
216
216
216
216
53
69
148
153
163
188
0.248 0.321 0.685 0.708 0.755 0.87
-12.1 -9.87 -3.29 -2.99 -2.44 -1.21
40
216
215
0.995
-0.04
40
215
206
0.958
-0.372
41
42
215
215
207
220
0.963 1.023
-0.328 0.198
15
16
212
212
278
315
1.311 1.486
2.35 3.44
17
213
343
1.61
4.14
At 15 Hz, Av > 1
155
181
225
3
3
3
5
4
4
1.667 1.333 1.333
4.44 2.50 2.50
At 225 kHz,
Av = 1.33.
Figure 6. Combined bode plots, (blue) Figure 1, (red) Figure 2, (green) Figure 3.
= 2(101)
=
1575.59
= 2(1)
=
159154.94
Let Z = 1575.59,
= 1 |=101
= 101 |=1
In the third low frequency test, the input capacitor is set back to 101 uF and the
output capacitor is set to 1 uF. It is noticeable that the voltage gain at 15 Hz is lower
than the first and second tests. However, we can see the similarities when the