QM07N60F

2011-04-29

-1-

N-Ch 600V Fast Switching MOSFETs

General Description

Product Summery

The QM07N60F is the highest performance N-ch

MOSFETs with extreme high cell density , which
provide excellent RDSON and gate charge for
most of the synchronous buck converter
applications .
The QM07N60F meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.

BVDSS

RDSON

ID

600V

1.35

7A

Applications
z High efficient switched mode power supplies
z Electronic lamp ballast
z LCD TV/ Monitor

Features

z Adapter

TO220F Pin Configuration

z Super Low Gate Charge

z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available

S
D
G

Absolute Maximum Ratings

Symbol

Parameter

VDS
VGS
ID@TC=25
ID@TC=100
IDM

Rating

Units

Drain-Source Voltage

600

Gate-Source Voltage

30

4.5

14

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V
Pulsed Drain Current

2
3

EAS

Single Pulse Avalanche Energy

22

mJ

IAS

Avalanche Current

6.6

PD@TC=25

Total Power Dissipation

70

TSTG

Storage Temperature Range

-55 to 150

TJ

Operating Junction Temperature Range

-55 to 150

Thermal Data
Symbol
RJA
RJC

Parameter

Typ.

Thermal Resistance Junction-ambient (Steady State)

1

Thermal Resistance Junction-Case

Max.

Unit

---

62

/W

---

1.8

/W

Rev A.01 D042611

QM07N60F

2011-04-29

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N-Ch 600V Fast Switching MOSFETs

Electrical Characteristics (TJ=25 , unless otherwise noted)

Symbol
BVDSS

Parameter

Conditions

Drain-Source Breakdown Voltage

Min.

Typ.

Max.

Unit

600

---

---

Reference to 25 , ID=1mA

---

0.56

---

V/

VGS=10V , ID=3.5A

---

1.1

1.35

---

VGS=0V , ID=250uA

BVDSS/TJ BVDSS Temperature Coefficient

2

RDS(ON)

Static Drain-Source On-Resistance

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

VGS(th)

VGS(th) Temperature Coefficient

---

-8.6

---

mV/

IDSS

Drain-Source Leakage Current

VDS=480V , VGS=0V , TJ=25

---

---

uA

IGSS

Gate-Source Leakage Current

VGS=30V , VDS=0V

---

---

100

nA

gfs

Forward Transconductance

VDS=10V , ID=3A

---

4.3

---

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

3.3

6.6

Qg

Total Gate Charge (10V)

---

26

36

Qgs

Gate-Source Charge

---

7.4

10.4

Qgd

Gate-Drain Charge

---

8.7

12.2

Td(on)

VDS=480V , VGS=10V , ID=1A

---

15

30

Rise Time

VDD=300V , VGS=10V , RG=10,

---

18.8

33.8

Turn-Off Delay Time

ID=1A

---

44

88

Fall Time

---

34

68

Ciss

Input Capacitance

---

1346

1884

Coss

Output Capacitance

---

76

106

Crss

Reverse Transfer Capacitance

---

3.2

4.5

Min.

Typ.

Max.

Unit

6.6

---

---

mJ

Min.

Typ.

Max.

Unit

---

---

---

---

14

---

---

---

157

---

nS

---

610

---

nC

Tr
Td(off)
Tf

Turn-On Delay Time

nC

VDS=25V , VGS=0V , F=1MHz

ns

pF

Guaranteed Avalanche Characteristics

Symbol
EAS

Parameter

Conditions
5

Single Pulse Avalanche Energy

VDD=50V , L=1mH , IAS=3.5A

Diode Characteristics
Symbol

Parameter

Conditions
1,6

IS

Continuous Source Current

ISM

Pulsed Source Current2,6

VSD

Diode Forward Voltage2

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

VG=VD=0V , Force Current

VGS=0V , IS=1A , TJ=25
IF=1A , dI/dt=100A/s , TJ=25

Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=1mH,IAS=6.6A
4.The power dissipation is limited by 150 junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

QM07N60F

2011-04-29

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N-Ch 600V Fast Switching MOSFETs

Typical Characteristics

Fig.1 Typical Output Characteristics

Fig.2 On-Resistance vs. G-S Voltage

Fig.3 Forward Characteristics of Reverse

Fig.4 Gate-Charge Characteristics

Fig.5 Normalized VGS(th) vs. TJ

Fig.6 Normalized RDSON vs. TJ

QM07N60F

2011-04-29

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N-Ch 600V Fast Switching MOSFETs

Fig.7 Capacitance

Fig.8 Safe Operating Area

Normalized Thermal Response (RJC)

1
DUTY=0.5
0.2
0.1

0.1
0.05
0.02
0.01

0.01

P DM

SINGLE

T ON
T

D = TON/T
TJpeak = TC+P DMXRJC

0.001
0.00001

0.0001

0.001

0.01

0.1

10

t , Pulse Width (s)

Fig.9 Normalized Maximum Transient Thermal Impedance

Fig.10 Switching Time Waveform

Fig.11 Unclamped Inductive Switching Waveform