Professional Documents
Culture Documents
Characteristics of Ballistic Tansport in Short-Channel Mosfets
Characteristics of Ballistic Tansport in Short-Channel Mosfets
Characteristics of Ballistic Tansport in Short-Channel Mosfets
S928S932
Hyungsang Kim
Department of physics, Dongguk University, Seoul 100-715
The Si MOSFET is the single most important unit of any digital or analog circuit today. As
it is scaled down to the nanometer region, charge carriers (electrons and holes) in the channel
are expected to flow with fewer scattering events, leading to ballistic transport. In this work, the
characteristics of the quasi-ballistic MOSFET are systematically investigated by taking into account
scattering phenomena of the carriers. For a practical viewpoint, a conventional MOSFET structure
is exploited. Numerical calculations of potential profile are carried out, in order to understand and
quantify the transport as functions of gate and drain voltages under various conditions.
PACS numbers: 85, 30, De
Keywords: MOSFET, Ballistic transport, Back-scattering phenomena
I. INTRODUCTION
hyunsik7@dongguk.edu
1r
) (VGS VT H ),
1+r
(1)
`
,
` + 0
(2)
where ` , called kT -layer length, is defined as a characteristic length corresponding to a potential drop by kT/q
near the source, as indicated in Fig. 1, and 0 represents
the mean free path of the carriers.
Fig. 1. Potential profile to explain the carrier backscattering coefficient (r) and the kT -layer length (`) in the
quasi-ballistic MOSFET.
-S928-
Fig. 2. Calculations of the potential profile along the channel with increasing drain voltage at a fixed gate voltage of 0.1
V (a) L = 80 nm (b) L = 40 nm. (T=300K)
At this point, the transmission coefficient can be approximated in terms of the back-scattering coefficient (r )
[8] :
t
1r
.
1+r
(3)
To quantitatively investigate the quasi-ballistic transport and drain current, it is necessary to calculate the
1-D potential profile along the channel. For simplicity,
the effect of the drain-induced barrier lowering (DIBL)
on the drain current is not included here. For numerical
modeling, MatLab from Math-Works Co. is exploited.
-S929-
Fig. 3. (a) Back-scattering coefficient (r). (b) Drain current vs. drain voltage. VGS = 0.1 V, T=300 K. = 80 nm,
= 60 nm, N = 40 nm.
Figure 2 shows the calculated potential profiles for various drain voltages at a fixed gate voltage. As is clearly
seen in this figure, as the drain bias is increased, the magnitude of the potential barrier becomes smaller, due to
the DIBL (Drain-Induced Barrier Lowering) effect, and
the kT -layer also decreases simultaneously.
Figure 3 shows that with increasing drain voltage, the
back-scattering coefficient (r ) becomes smaller, due to
the reduction of the kT -layer length (`), and its value is
saturated at a lower drain voltage with decreasing channel length. So, these results support the idea that as the
channel length becomes shorter, both the back-scattering
coefficient and the drain current saturate at a lower drain
voltage.
2. Dependence of quasi-ballistic characteristics
on temperature
Temperature can also be used as one of the external
parameters to alter the properties of the quasi-ballistic
MOSFET. Since carrier transmission in the channel is
strongly dependent on carrier mobility, lowering the temperatures can enhance carrier mobility, leading to a
larger transmission coefficient.
Figure 4(a) shows the results for the potential distri-
-S930-
bution calculated at 300 K and 77 K. As the temperature decreases, more inversion charges can move to the
channel, because of the lowered effective potential barrier
which carriers experience, leading to the enhancement of
the transmission coefficient. In addition, increased carrier mobility makes their mean free path longer, resulting
in the reduction of the back-scattering coefficient in the
channel. Figure 4(b) shows improved drain current at 77
K, compared with that at 300 K.
3. Dependence of quasi-ballistic characteristics
on doping concentration in the source
It is assumed in this study that carriers can be transmitted over the barrier through thermionic emission. So,
making a degenerate condition in the source region can
increase the carrier density injected into the channel.
Since a high doping concentration in the source increases the number of carriers having energy higher than
the channel barrier, the saturation current is expected to
increase at a higher source doping concentration.
Figure 5 displays the simulated drain current for different doping concentration of the source region. As
expected, with increasing doping concentrations in the
source, the saturation current is enhanced.
4. Dependence of quasi-ballistic characteristics
Fig. 6. Calculated potential profiles for various gate voltages at a fixed drain voltage of 0.1 V, VGS = 0 0.5 V (0.1
V step). (a) L = 40 nm, (b) L = 80 nm. (T=300 K)
on gate voltage
Figure 6 shows both the lowering of the potential barrier and the corresponding change of the kT -layer length
(`) at each given gate voltage.
Figure 7 shows the simulated results for the inversion
charge density in the channel and gate voltage dependent
drain current in the quasi-ballistic MOSFET.
As the gate voltage is increased, the inversion charge
injected into the channel becomes larger because of the
lowering of the potential barrier. Fig. 7(b) displays the
-S931-
on oxide thickness
Carriers injected into the channel from the thermal
equilibrium source have a thermal velocity determined by
oxide thickness, which is one of the most important factors in determining the properties of the ballistic transport.
Figure 8 shows the drain current vs. gate voltage as a
function of oxide thickness. Under the degenerate condition, thermal velocity can be given by [9] :
q
(4)
r = (8~/3m ) Cef f (VGS VT H )/q,
where the effective capacitance (Cef f ) is
Cef f =
ox
.
tox
(5)
IV. CONCLUSION
We have studied the characteristics of the quasiballistic transport and drain current in ultra small MOSFETs, taking into account the back-scattering and transmission coefficients.
The characteristics of the quasi-ballistic MOSFET
vary dramatically according to temperature, doping concentration in the source, oxide thickness and drain & gate
voltage. Dependences of these parameters on the quasiballistic transport are more pronounced as the channel
length becomes shorter.
ACKNOWLEDGMENTS
This work was supported by Grant No. (R01-2003000-11628-0) from the Basic Research Program of the
Korea Science & Engineering Foundation (KOSEF), and
partly by QSRC at Dongguk University.
APPENDIX A
Fig. 8. Characteristics of VGS -IDS as a function of oxide
layer thickness : tox =2 nm 1 nm, L = 40 nm and VDS =
0.05 V.
(A1)
(A2)
where ns (0) represents the carrier density at the beginning of the channel, and Cef f is the effective oxide capacitance.
-S932-
1r
)T ,
1+r
(A3)
`
,
` + 0
(A4)
1r
)(VGS VT H ),
1+r
(A6)
REFERENCES
[1] Z. Ren and M. Lundstrom, Superlattices and microstructures 27, 177 (2000).
[2] Won-ju Cho, Seongjae Lee, Moongyu Jang, Dunglyul
Maeng, Tae Woong Kang and Kyoung Wan Park, J. Korean Phys. Soc. 41, 509 (2002).
[3] Won-ju Cho, Seongjae Lee, Jong-heon Yang, Kiju Im and
Jihoon Oh, J. Korean Phys. Soc. 43, 897 (2003).
[4] Won-ju Cho and Seongjae Lee, J. Korean Phys. Soc. 42,
2615 (2003).
[5] M. Gupta, IEEE potentials 21, 13 (2003).
[6] M. Lundstrom and Z. Ren, IEEE Transactions on electron
devices 49, 133 (2002).
[7] G. Baccarani and M. R. Wordeman, IEEE Trans. Electron
Devices ED-30, 1295 (1983).
[8] J. Wang and M. Lundstrom, IEEE Transactions on electron devices 50, 1604 (2003).
[9] K. Natori, IEICE Trans. Electron E84-C (2001).