This product complies with the RoHS Directive (EU 2002/95/EC).

Optoisolators (Photocouplers)

CNZ3731 (ON3731)
Optoisolators
Overview
The CNZ3731 of optoisolators consist of a GaAs infrared LED which is optically coupled with a Si NPN Darlington phototransistor, and
housed in a small DIL package. The series provides high I/O isolation voltage and high collector/emitter isolation voltage, as well as a high
current transfer ratio (CTR).

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Features

Applications

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High collector-emitter voltage (base open): VCEO > 300 V

High current transfer ratio with darlington phototransistor output: CTR = 4 000% (typ.)
High I/O isolation voltage: VISO 5 000 V[rms]
Small DIL package for saving mounting space
UL listed (UL File No. E79920)

Telephones
Telephone switches
Fax
Programmable controllers
Signal transmission between circuits with different potentials and impedances

Absolute Maximum Ratings Ta = 25C
Parameter

Symbol

Rating

Unit

PD

75

mW

IF

50

mA

IFP

VR

VCEO

300

VECO

0.3

IC

150

mA

PC

300

mW

VISO

5 000

V[rms]

PT

320

mW

Operating ambient temperature

Topr

30 to +100

Storage temperature

Tstg

55 to +125

Power dissipation *1

Input
(Light emitting diode)

Forward current

Pulse forward current *2

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Reverse voltage

isc

Collector-emitter voltage
(Base open)
Emitter-collector voltage
(Base open)

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Output
(Photo transistor)

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Collector current

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Collector power dissipation *3

Isolation voltage, input to output *4

Total power dissipation

Note) *1:
*2:
*3:
*4:

Input power derating ratio is 0.75 mW/C at Ta 25C

Pulse width 100 s, repeat 100 pps
Output power derating ratio is 1.5 mW/C at Ta 25C
AC 1 min. RH < 60%

Note) The part number in the parenthesis shows conventional part number.
Publication date: October 2008

SHF00017AEK

This product complies with the RoHS Directive (EU 2002/95/EC).

CNZ3731

Electrical-Optical Characteristics Ta = 25C3C
Parameter

Symbol

Reverse current
Input
Forward voltage
characteristics
Terminal capacitance
Collector-emitter voltage
(Base open)

IR

VR = 3 V

VF

IF = 50 mA

Ct

VR = 0 V, f = 1 MHz

Min

DC current transfer ratio *1

Isolation capacitance, input to output

Transfer
Isolation resistance, input to output
characteristics
Rise time *2
Fall time *3

Note) 1. Input and output are practiced by electricity.

IC

CTR

IF

100%

1.50

30

pF
V

VECO

IE = 100 mA

0.3

ICEO

VCE = 200 V

CC

VCE = 10 V, f = 1 MHz

CTR

VCE = 2 V, IF = 1 mA

CISO

f = 1 MHz

RISO

VISO = 500 V

tr

VCE(sat)

VCC = 10 V, IC = 10 mA,
RL = 100 W

IF = 1 mA, IC = 2 mA

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300

*2: tr : Time required for the collector current to increase from 10% to 90% of its nal value
*3: tf : Time required for the collector current to decrease from 90% to 10% of its initial value

10

IC = 100 mA

2. This device is designed by disregarding radiation.

3. *1:

Unit

VCEO

tf

Collector-emitter saturation voltage

Max

1 000

200

SHF00017AEK

nA

10

pF

4 000

0.7

pF

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Collector-emitter capacitance

Typ
1.35

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Emitter-collector voltage
Output
characteristics (Base open)
Collector-emitter cutoff current
(Base open)

Conditions

1011

40

15

1.0

This product complies with the RoHS Directive (EU 2002/95/EC).

CNZ3731

PD Ta

PC Ta

IFP DR
105

150

100

Pulse forward current IFP (mA)

Collector power dissipation PC (mW)

400

300

200

Pulse width 100 s

Ta = 25C

104

103

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Power dissipation PD (mW)

200

50

75

0
30

125

Ambient temperature Ta (C)

75

10
10 3

125

10 2

IC VCE

160

Ta = 25C

Collector current IC (mA)

40

30

20

120

3 mA

1.5 mA

1 mA

40

10

Ta = 25C

Ta = 25C

IF = 5 mA

2 mA

80

IC VCE(sat)

103

PC (max.)

50

10 1

Duty ratio DR

Ambient temperature Ta (C)

IF V F

60

Forward current IF (mA)

25

Collector current IC (mA)

25

102

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0
30

100

IF = 5 mA

102

2 mA

1 mA

10

0.5 mA

0.5 mA

0.4

0.8

1.2

1.6

2.0

2.4

Forward voltage VF (V)

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10

Forward current IF (mA)

102

DC current transfer rati CTR (%)

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Collector current IC (mA)

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VCE = 2 V
Ta = 25C

102

10 1
10 1

10 1

Collector-emitter voltage VCE (V)

IC IF

103

10

105

104

103

102
10 1

0.4

CTR IF

10

Forward current IF (mA)

SHF00017AEK

1.2

CTR Ta

120

VCE = 2 V
Ta = 25C

0.8

Collector-emitter saturation voltage VCE(sat) (V)

Relative DC current transfer ratio CTR (%)

102

IF = 1 mA
VCE = 2 V

100

80

60

40
40 20

20

40

60

80

100

Ambient temperature Ta (C)

This product complies with the RoHS Directive (EU 2002/95/EC).

IF = 1 mA
IC = 2 mA
1.4

VCE = 200 V

10 6

1.2

10 8

0.8

Ta = 25C

10 8

10 7

1.0

ICEO VCE

Collector-emitter cutoff current (Base open) ICEO (A)

ICEO Ta

10 5

10 9

10 9

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0.6

10 10

20

40

60

80

100

Ambient temperature Ta (C)

Rise time tr ,Fall time tf (s)

103

20

40

60

tr

Sig. in

tf

td
ts

10

10

AV f

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VCE = 4 V
Ta = 25C
IC = 10 mA

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Load resistance RL (k)

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RL = 10

int
Ma
10

102

V1

V2
td
tr

ts
tf

90%
10%

VCC

+10 V

50 k

Sig. out

5 k

50

103

Frequency f (kHz)

10 3

Measurement circuit of frequency characteristics

50

20

RL

Sig. in

1 k

30
10 1

10 2

5 ms

16 V
100 F

100

10

10 10
10 1

Collector-emitter voltage VCE (V)

V1

10

100

VCC

50

10 1

80

Switching time measurement circuit

102

10 1
10 2

Voltage gain AV (dB)

Ambient temperature Ta (C)

tr , tf RL

VCC = 10 V
IC = 10 mA
Ta = 25C

10 11
40 20

SHF00017AEK

RL

IC = 10 mA

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0.4
40 20

4 mA[p-p]

Collector-emitter saturation voltage VCE(sat) (V)

VCE(sat) Ta
1.6

Collector-emitter cutoff current (Base open) ICEO (A)

CNZ3731

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int

Pin name
1: Anode
2: Cathode
3: Emitter
4: Collector

Ma

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This product complies with the RoHS Directive (EU 2002/95/EC).

CNZ3731

Package (Unit: mm)

LCTXXN4Z0001

Internal Connection

Top View

SHF00017AEK

Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.

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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
Any applications other than the standard applications intended.

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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.

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